AP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.

Transcription

1 RoHS-compliant Product dvanced Power P-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BV DSS -3V Simple Drive Requirement R DS(ON) 6mΩ Dual P MOSFET Package I D -7. Description D D D D SO- dvanced Power MOSFETs from PEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. S G S G G D G D S S bsolute Maximum Ratings V DS V GS I =5 I =7 I DM Symbol Parameter Rating Drain-Source Voltage -3 Gate-Source Voltage ± Continuous Drain Current 3-7. Continuous Drain Current Pulsed Drain Current -3 P =5 Total Power Dissipation T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Units V V W Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient /W Data and specifications subject to change without notice 79

2 Electrical j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =-5u V R DS(ON) Static Drain-Source On-Resistance V GS =-V, I D = mω V GS =-.5V, I D = mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =-5u V g fs Forward Transconductance V DS =-V, I D = S I DSS Drain-Source Leakage Current V DS =-3V, V GS =V u Drain-Source Leakage Current (T j =7 o C) V DS =-V, V GS =V u I GSS Gate-Source Leakage V GS =±V - - ± n Q g Total Gate Charge I D = nc Q gs Gate-Source Charge V DS =-V -. - nc Q gd Gate-Drain ("Miller") Charge V GS =-.5V nc t d(on) Turn-on Delay Time V DS =-5V ns t r Rise Time I D = ns t d(off) Turn-off Delay Time R G =3.3Ω,V GS =-V - - ns t f Fall Time R D =5Ω ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V DS =-5V pf C rss Reverse Transfer Capacitance f=.mhz pf R g Gate Resistance f=.mhz Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units V SD Forward On Voltage I S =-.7, V GS =V V t rr Reverse Recovery Time I S =-7, V GS =V, - - ns Q rr Reverse Recovery Charge di/dt=/µs - - nc Notes:.Pulse width limited by Max. junction temperature..pulse test 3.Surface mounted on in copper pad of FR board ; 35 /W when mounted on Min. copper pad. THIS PRODUCT IS N ELECTROSTTIC SENSITIVE, PLESE HNDLE WITH CUTION. THIS PRODUCT HS BEEN QULIFIED FOR CONSUMER MRKET. PPLICTIONS OR USES S CRITERIL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM RE NOT UTHORIZED.

3 -I D, Drain Current () 3 T =5 o C -V -7.V -5.V -.5V V G =-3.V -I D, Drain Current () 3 T = 5 o C -V -7.V -5.V -.5V V G =-3.V Fig. Typical Output Characteristics Fig. Typical Output Characteristics 36 I D =-5 T =5.6. I D =-7 V G =-V 3 R DS(ON) (mω) Normalized R DS(ON) V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig. Normalized On-Resistance v.s. Junction Temperature. -I S () 6 T j =5 o C T j =5 o C Normalized -V GS(th) (V) V SD, Source-to-Drain Voltage (V) T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 3

4 f=.mhz -V GS, Gate to Source Voltage (V) 6 I D = - 7 V DS = - V C (pf) C iss C oss C rss Q G, Total Gate Charge (nc) Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics Duty factor=.5 -I D (). T =5 o C Single Pulse us ms ms ms s DC Normalized Thermal Response (R thja ) Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thja + T a R thja=35 o C/W t, Pulse Width (s) Fig 9. Maximum Safe Operating rea Fig. Effective Transient Thermal Impedance 3 V DS =-5V T j =5 o C T j =5 o C V G -I D, Drain Current () -.5V Q GS Q G Q GD Charge Q 3 5 -V GS, Gate-to-Source Voltage (V) Fig. Transfer Characteristics Fig. Gate Charge Waveform

5 Package Outline : SO- DVNCED POWER ELECTRONICS CORP. D Millimeters SYMBOLS MIN NOM MX e B E E B C.9..5 D E E L θ.. e.7 TYP DETIL L θ c.ll Dimension re In Millimeters..Dimension Does Not Include Mold Protrusions. DETIL Part Marking Information & Packing : SO- 957GM YWWSSS Part Number Package Code meet Rohs requirement Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5