G S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3
|
|
- Godwin Perry
- 5 years ago
- Views:
Transcription
1 AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -1V Surface Mount evice R S(ON) mω G RoHS-compliant, halogen-free I -A S SS escription Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP37GN-HF-3 is in the popular SOT-3 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches and C-C converters. SOT-3 G S Absolute Maximum Ratings V S V GS I I M A P at T A =5 C Total Power issipation 1.3 W T STG J Symbol Parameter Rating Units rain-source Voltage -1 V Gate-Source Voltage ± V I at T =5 C Continuous rain Current 3 - A A at T = 7 C Continuous rain Current A Pulsed rain Current 1-1 A Storage Temperature Range -55 to 15 C T Operating Junction Temperature Range -55 to 15 C Thermal ata Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 9 C/W Ordering Information AP37GN-HF-3TR : RoHS-compliant halogen-free SOT-3, shipped on tape and reel, 3pcs/ reel 11 Advanced Power USA /5
2 AP37GN-HF-3 Electrical Specifications at T j =5 C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV SS rain-source Breakdown Voltage V GS =V, I =-5uA V V GS =, I =-A - - mω R S(ON) Static rain-source On-Resistance V GS =-.5V, I =-3.A mω V GS =-1.V, I =-.A mω V GS(th) Gate Threshold Voltage V S =V GS, I =-5uA V g fs Forward Transconductance V S =-5V, I =-A S I SS rain-source Leakage Current V S =-1V, V GS =V ua rain-source Leakage Current (T j =7 o C) V S =-1V, V GS =V ua I GSS Gate-Source Leakage V GS = ±V, V S =V - - ±1 na Q g Total Gate Charge I =-A - 15 nc Q gs Gate-Source Charge V S =-1V nc Q gd Gate-rain ("Miller") Charge V GS = - - nc t d(on) Turn-on elay Time V S =-1V - - ns t r Rise Time I =-1A ns t d(off) Turn-off elay Time R G =3.3Ω,V GS =-1V ns t f Fall Time R =1Ω ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V S =-15V pf C rss Reverse Transfer Capacitance f=1.mhz pf Source-rain iode Symbol Parameter Test Conditions Min. Typ. Max. Units V S Forward On Voltage I S =-1.A, V GS =V V t rr Reverse Recovery Time I S =-A, V GS =V, ns Q rr Reverse Recovery Charge di/dt=1a/µs - - nc Notes: 1. Pulse width limited by maximum junction temperature.. Pulse test - pulse width < 3µs, duty cycle < % 3. Surface mounted on 1in copper pad of FR board, t <1sec; 7 C/W when mounted on minimum copper pad. THIS PROUCT IS SENSITIVE TO ELECTROSTATIC ISCHARGE, PLEASE HANLE WITH CAUTION. USE OF THIS PROUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZE. APEC OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. 11 Advanced Power USA /5
3 Typical Electrical Characteristics AP37GN-HF I, rain Current (A) T A =5 o C -5.V -3.V -.5V V G = - 1. V -I, rain Current (A) 1 1 T A = 15 o C -5.V -3.V -.5V V G = - 1. V -V S, rain-to-source Voltage (V) -V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics Fig. Typical Output Characteristics 7 I =-3A T A =5 o C I = - A V G = R S(ON) (mω) 5 Normalized R S(ON) V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance vs. Fig. Normalized On-Resistance Gate Voltage vs. Junction Temperature 3. -I S (A) 1 T j =15 o C T j =5 o C Normalized -V GS(th) (V) V S, Source-to-rain Voltage (V) Fig 5. Forward Characteristic of Reverse iode T j, Junction Temperature ( o C) Fig. Gate Threshold Voltage vs. Junction Temperature 11 Advanced Power USA 3/5
4 AP37GN-HF-3 Typical Electrical Characteristics (cont.) 1 f=1.mhz -V GS, Gate to Source Voltage (V) I =-A V S =-1V C (pf) 1 C iss C oss C rss 1 3 Q G, Total Gate Charge (nc) V S, rain-to-source Voltage (V) Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics 1. 1 uty factor=.5 -I (A) Operation in this area limited by R S(ON) T A =5 o C Single Pulse 1us 1ms 1ms 1ms 1s C Normalized Thermal Response (R thja ) Single Pulse P M t T uty factor = t/t Peak T j = P M x R thja + T a R thja = 77 C/W V S, rain-to-source Voltage (V) t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 1. Effective Transient Thermal Impedance V S 9% V G Q G Q GS Q G 1% V GS t d(on) t r t d(off) t f Charge Q Fig 11. Switching Time Waveform Fig 1. Gate Charge Waveform 11 Advanced Power USA /5
5 AP37GN-HF-3 Package imensions: SOT-3 1 SYMBOLS Millimeters MIN NOM MAX A A E1 E A e E.. 3. e E M -- 1 L A A M L A1 M 1. All dimensions are in millimeters.. imensions do not include mold protrusions. Marking Information: Product: N9 = AP37GN-HF-3 N9XX ate/lot code For details of how to convert this to standard YYWW date code format, please contact us directly. 11 Advanced Power USA 5/5
G S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from
More informationAdvanced Power Electronics Corp.
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -.A SS escription Advanced Power
More informationG S. Drain-Source Voltage 30 V Gate-Source Voltage ± 8 V at T = 70 C Continuous Drain Current 3. P D at T A =25 C Total Power Dissipation 1.
AP236AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate rive Lower On-resistance Surface-Mount evice R S(ON) 35mΩ RoHS-compliant, Halogen-free G S I 5A BV SS 3V escription Advanced Power
More informationG S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs
More informationG S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs
More informationG S. Drain-Source Voltage 30 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
N-channel Enhancement-mode Power MOSFET Simple rive Requirement Low Gate Charge Surface Mount evice R S(ON) 2mΩ RoHS-compliant, halogen-free G S I.7A BV SS 3V escription Advanced Power MOSFETs from APEC
More informationS S. Drain-Source Voltage -30 V Gate-Source Voltage + 25 V. at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -3V Fast Switching Performance R S(ON) mω G RoHS-compliant, Halogen-free I -9. S SS escription dvanced Power MOSFETs
More informationG2 S2 S1 G1 SO-8. Symbol Parameter V ±20 ±20 V A A A 2.0 W Linear Derating Factor W/ C Storage Temperature Range
AP5GM-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free Description D D D D SO- G S S
More informationDual N-channel Enhancement-mode Power MOSFETs
Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate-charge RoHS-compliant halogen-free SO- package BV DS(ON) D DSS 3V mω Fast Switching Performance I 7.6A R D D Description
More informationAP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
Halogen-Free Product dvanced Power P-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS -6V Small Package Outline R S(ON) mω Surface Mount evice I -. RoHS Compliant SOT-3
More informationP2G N2D/P2D P1S/P2S P1G N2G N1S N2S SO-8 N1G N1D/P1D. Symbol Parameter
Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Full Bridge Applications RoHS-compliant, halogen-free Description PG ND/PD PS/PS PG SO-8 NG
More informationD1/D2 S1 G1 S2 G2 TO-252-4L
Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-compliant, halogen-free Description S1 G1 S2 G2 D1/D2 TO-252-4L
More informationAdvanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
dvanced Power P-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS -3V Small Package Outline R S(ON) 8mΩ Surface Mount evice I - 3.2 RoHS Compliant escription SOT-23 G S
More informationAP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.
AP5GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge D N-CH BV DSS V S Low On-resistance D R DS(ON) 7mΩ Surface Mount Package I D.A
More informationmj T STG T J -55 to 150 C Operating Junction Temperature Range Parameter
AP1R83GMT-HF-3 N-channel Enhancement-mode Power MOFET imple rive Requirement O-8 Compatible with Heatsink Low On-resistance R (ON) 1.9mΩ G RoH-compliant, halogen-free I 17A BV 3V escription Advanced Power
More information-55 to 150 C Operating Junction Temperature Range -55 to 150 C. Parameter
N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low Gate Charge Fast Switching Performance R DS(ON) 25mΩ G RoHS-compliant, halogen-free I D 28A S BV DSS 30V Description Advanced Power
More informationAP6900GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp.
AP69GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S/D2 Simple Drive Requirement CH- BV DSS 3V S/D2 DC-DC Converter Suitable R DS(ON) 3mΩ G S/D2
More informationAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
dvanced Power N-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS 4V Fast Switching Characteristic R S(ON) 5mΩ Low On-resistance I 7.8 escription SO-8 S S S P9465EM RoHS-compliant
More informationAdvanced Power Electronics Corp.
Advanced Power Electronics Corp AP65SL99AWL Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET % R g & UIS Test D V DS @ T j,max 7V Fast Switching Characteristic R DS(ON) 99mΩ 3 Simple Drive
More informationG D S. Drain-Source Voltage 100. at T =100 C Continuous Drain Current to 150 C Operating Junction Temperature Range -55 to 150 C
AP1T1AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching haracteristics Low Gate harge R DS(ON) 16mΩ G RoHS-compliant, halogen-free I D 9A S BV DSS 1V Description
More informationAP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
Halogen-Free Product dvanced Power P-CHNNEL ENHNCEMENT MODE Electronics Corp POWER MOSFET Simple Drive Requirement D BV DSS -6V Small Package Outline R DS(ON) mω Surface Mount Device I D - S RoHS Compliant
More informationAP0803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
P83GMT-HF Halogen-Free Product dvanced Power N-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOFET imple rive Requirement BV 3V O-8 Compatible R (ON) 8.5mΩ Low On-resistance I 5 G RoH Compliant escription
More informationAP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
RoHS-compliant Product dvanced Power P-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BV DSS -3V Simple Drive Requirement R DS(ON) 6mΩ Dual P MOSFET Package I D -7. Description
More informationAOT460 N-Channel Enhancement Mode Field Effect Transistor
AOT46 NChannel Enhancement Mode Field Effect Transistor General escription The AOT46/L uses advanced trench technology and design to provide excellent R S(ON) with low gate charge. This device is suitable
More informationP-Channel 2.5-V (G-S) MOSFET
New Product SiL P-Channel.-V (G-S) MOSFET PROUCT SUMMARY V S (V) r S(on) (Ω) I 8 at V GS = -. V ±. -. at V GS = -.6 V ±..6 at V GS = -. V ±. FEATURES TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT
More informationAO6401 P-Channel Enhancement Mode Field Effect Transistor
July AO64 P-Channel Enhancement Mode Field Effect Transistor General escription The AO64 uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as
More informationFeatures. Bottom View
YM AVANCE INFORMATION 3V N-CHANNEL ENHANCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(ON) max I max T A = +25 C 17mΩ @ V GS = 1V 8.4A 28mΩ @ V GS = 4.5V 6.8A This new generation MOSFET is
More informationAP9997GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BV DSS V Lower Gate Charge R DS(ON) mω Fast Switching Characteristic I D G Description
More informationAOD407 P-Channel Enhancement Mode Field Effect Transistor
AO47 PChannel Enhancement Mode Field Effect Transistor General escription The AO47 uses advanced trench technology to provide excellent R S(ON), low gate charge and low gate resistance. With the excellent
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.49 at V GS = - V 6.6 a 2 nc.7 at V GS = - 4.5 V 5 a S FEATURES Halogen-free TrenchFET Power MOSFET % R g Tested APPLICATIONS
More informationN-Channel 20 V (D-S) MOSFET
SiH N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A). at V GS =. V.9.7 at V GS =. V..9 at V GS =.8 V. SOT- SC-7 (-LEAS) FEATURES Halogen-free According to IEC 9-- efinition TrenchFET Power
More informationN-Channel 150-V (D-S) MOSFET
Si4848Y N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).8 at V GS = V 3.7.9 at V GS = 6. V 3. FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs Compliant
More informationGreen. Pin1. Top View Pin Configuration. Part Number Case Packaging DMTH3004LPS-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product Summary BV SS 3V R S(ON) Max 3.8mΩ @ V GS = V 6mΩ @ V GS = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOSFET is designed to minimize the on-state
More informationGreen. Features. I D T C = +25 C (Note 9) 100A 100A. Top View Pin Configuration
Product Summary Green 4V N-CHANNEL ENHANCEMENT MOE MOSFET POWERI Features % Unclamped Inductive Switching Ensures More Reliable BV SS 4V R S(ON) max.8mω @ V GS = V 3.mΩ @ V GS = 4.5V I T C = +5 C (Note
More informationFeatures S 1. TA=25 o C unless otherwise noted
FCP P-Channel.V PowerTrench Specified MOSFET January FCP General escription This P-Channel.V specified MOSFET uses a rugged gate version of Fairchild s advanced PowerTrench process. It has been optimized
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).5 at V GS = V 7.9. at V GS = 6. V 7.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs 75 C Maximum Junction
More informationG D S. Drain-Source Voltage 30. V Gate-Source Voltage
M4N3P N-CHANNEL ENHANCEMENT-MOE POWER MOFET Low gate charge B 3V imple drive requirement R (ON) 7mΩ Fast switching I 4A escription TO-22 Power MOFETs from ilicon tandard provide the designer with the best
More informationAP9971GD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BV DSS 6V Fast Switching Speed R DS(ON) mω D PDIP-8 Package I D Description PDIP-8 S S G
More informationP-Channel 60 V (D-S) MOSFET
P-Channel 6 V (-S) MOSFET TU4P6 PROUCT SUMMARY V S (V) R S(on) ( ) (A).45 at V GS = - V - 4-6 d.54 at V GS = - 4.5 V - 4 d FEATURES TrenchFET Power MOSFET Material categorization: APPLICATIONS Load Switch
More informationAOW V N-Channel MOSFET
AOW9 V NChannel MOSFET General escription Trench Power MV MOSFET technology Low R S(ON) Low Gate Charge Optimized for fastswitching applications Product Summary V S I (at V GS =V) R S(ON) (at V GS =V)
More informationN-Channel 190-V (D-S) MOSFET
New Product N-Channel 9-V (-S) MOSFET SiB452K PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) 2.4 at V GS = 4.5 V.5 9 2. at V GS = 2.5 V.48 2.3 nc. at V GS =.8 V.4 PowerPAK SC-75-L-Single FEATURES
More informationIRLMS1503PbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationAON V P-Channel MOSFET
2V PChannel MOSFET General escription The AON447 uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
More informationN-Channel 20-V (D-S) MOSFET
Si546U N-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) 2.5 at V GS = 4.5 V 2.7 at V GS = 2.5 V 2.2 at V GS =. V 2 PowerPAK ChipFET Single 7 6 5 S Bottom View Ordering Information:
More informationV DS -20V I D (at V GS =-4.5V) R DS(ON) (at V GS = -1.8V) ESD protected TSOP6 D. Top View. Drain-Source Voltage -20 V
2V PChannel MOSFET General escription The AO649A uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
More informationP-Channel 12-V (D-S) MOSFET
P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2.255 at V GS = -.5 V - 9 a.28 at V GS = - 3.7 V - 9 a.3 at V GS = - 2.5 V - 9 a. at V GS = -.8 V - 9 a.5 at V GS =
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationP-Channel 20 V (D-S) MOSFET
Si7655AN P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.).36 at V GS = - V - e - 2.8 at V GS = -.5 V - e 72 nc.9 at V GS = - 2.5 V - e PowerPAK 22-8S FEATURES TrenchFET
More informationFDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET
FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationP-Channel 30 V (D-S) MOSFET
SiA483J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.2at V GS = - V - 2 a 2 nc.3 at V GS = - 4.5 V - 2 a PowerPAK SC-7-6L-Single 6 5 2.5 mm S 4 S 2 3 G 2.5 mm
More informationAdvanced Power Electronics Corp.
dvanced Power Electronics Corp. P6679GH/J-HF Halogen-Free Product P-CHNNEL ENHNCEMENT MODE POWER MOSFET Lower On-resistance D BV DSS -3V Simple Drive Requirement R DS(ON) 9mΩ Fast Switching Characteristic
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V 2 R S(on) () at V GS = 4.5 V 5 I (A).7 Configuration Single Package SC-7 SOT-33 SC-7 Single ( leads) S 4 5 FEATURES
More informationP-Channel 30 V (D-S) MOSFET
SiA449J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.24 at V GS = - 4.5 V - 2 a 23. nc.2 at V GS = - V - 2 a.38 at V GS = - 2.5 V - 2 a PowerPAK SC-7-L-Single
More informationAP9997GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
P9997GP RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BV DSS V Lower Gate Charge R DS(ON) mω Fast Switching Characteristic I D
More informationFDG6304P Dual P-Channel, Digital FET
uly 999 FG64P ual P-Channel, igital FET General escription Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
More informationAOP608 Complementary Enhancement Mode Field Effect Transistor
AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationFeatures. R DS(ON) = 60 V GS = 1.8 V S 1. TA=25 o C unless otherwise noted
FC6P P-Channel.8V Specified PowerTrench MOSFET January FC6P General escription This P-Channel.8V specified MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for battery power
More informationP-Channel 1.2 V (G-S) MOSFET
Si99H P-Channel. V (G-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 8.78 at V GS = -.5 V -..95 at V GS = -.5 V -..5 at V GS = -.8 V -..5 at V GS = -.5 V -.. at V GS = -. V -. b SOT-
More informationRU3030M2. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
N-Channel Advanced Power MOSFET Features 3V/3A, R S (ON) =mω(typ.)@v GS =V R S (ON) =5mΩ(Typ.)@V GS =4.5V Super High ense Cell esign Fast Switching Speed Low gate Charge % avalanche tested Lead Free and
More informationHEXFET Power MOSFET for DC-DC Converters. Absolute Maximum Ratings Parameter Symbol IRF7828PbF Units Drain-Source Voltage V DS
P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S 1 2 8 7 A escription This
More informationFDC610PZ P-Channel PowerTrench MOSFET
FC6PZ P-Channel PowerTrench MOSFET 3V, 4.9A, 4mΩ Features Max r S(on) = 4mΩ at V GS = V, I = 4.9A Max r S(on) = 7mΩ at V GS = 4.V, I = 3.7A Low gate charge (7nC typical). High performance trench technology
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET SQ7AENW PROUCT SUMMARY V S (V) R S(on) (Ω) at V GS = V.3 R S(on) (Ω) at V GS =.5 V.8 I (A) 8 Configuration Single PowerPAK -8W Single 5 7 8 FEATURES TrenchFET power
More informationSSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
More informationP-Channel 20 V (D-S) MOSFET
Si469H P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - SOT-363 SC-7 (6-LEAS).8 at V GS = - V -.7. at V GS = - 4.5 V -.7.55 at V GS = -.5 V -.7 5.5 nc FEATURES Halogen-free
More informationAO3408 N-Channel Enhancement Mode Field Effect Transistor
August 2 AO348 N-Channel Enhancement Mode Field Effect Transistor General Description The AO348 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationAO3401 P-Channel Enhancement Mode Field Effect Transistor
July 2 AO34 P-Channel Enhancement Mode Field Effect Transistor General Description The AO34 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (-S) 75 C MOSFET SQ75AENW PROUCT SUMMARY V S (V) -6 R S(on) (Ω) at V GS = - V.65 R S(on) (Ω) at V GS = -.5 V.9 I (A) -6 Configuration Single Package PowerPAK -W PowerPAK -W Single
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () I (A) b, c Q g (TYP.) 3.2 at V GS = V..24 at V GS = 4.5 V 9.2 PowerPAK SC-7-6L Single S 4 5 S 6 5.6 FEATURES TrenchFET power MOSFET Thermally
More informationAO3160E 600V,0.04A N-Channel MOSFET
AO36E 6,.4A NChannel MOSFET General escription Logic Level riving 4.5 ES Protection RoHS and Halogen Free Compliant Product Summary S @ T j,max 7 I (at GS =).4A R S(ON) (at GS =) < 5Ω R S(ON) (at GS =4.5)
More informationN-Channel 100 V (D-S) MOSFET
SiAJ N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) a Q g (Typ.).83 at V GS = V.3.3 at V GS =.5 V 9 PowerPAK SC-7-L-Single 5 2.5 mm S S 2 3 G 2.5 mm Bottom View Ordering Information:
More informationN-Channel 12 V (D-S) MOSFET
New Product SiH N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) SOT-363 SC-7 (6-LEAS).6 at V GS =.5 V.3 at V GS =.5 V.36 at V GS =.8 V 6 7.5 nc FEATURES Halogen-free According
More informationN-Channel 30-V (D-S) MOSFET
SiL N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A).48 at V GS = V 4.7 at V GS = 4.5 V.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFET Compliant to RoHS
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET Si545AEU PROUCT SUMMARY V S (V) R S(on) () (Max.) I (A) a Q g (Typ.) - 2.96 at V GS = - 4.5 V - 25.32 at V GS = - 2.5 V - 25.22 at V GS = -.8 V - 7 8 PowerPAK ChipFET Single 7
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-S) MOSFET SiBEK PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V PowerPAK SC-75-L-Single 5. mm S S G. mm.5 nc Part # code Marking Code A X
More informationNVTFS5826NL. Power MOSFET 60 V, 24 m, 20 A, Single N Channel
Power MOSFET 6 V, 24 m, 2 A, Single N Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS5826NLWF
More informationTSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.).95 at V GS = V 8 3 9. nc.3 at V GS = 4.5 V 8 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFET
More informationP-Channel 20 V (D-S) MOSFET
SiSS23N P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2 3.3 mm.5 at V GS = -.5 V - 5 e.63 at V GS = - 2.5 V - 5 e.5 at V GS = -.8 V - 5 e 8 PowerPAK 22-8S 7 6 S S
More informationSMN01L20Q Logic Level N-Ch Power MOSFET
Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features 0.85A, 200V, R DS(on) =1.35Ω @ V GS =10V Low gate charge: Q g =4nC (Typ.) Fast switching 100% avalanche tested RoHS compliant device D
More informationTSM V N-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS 20 V V GS = 4.5V 33 R DS(on) (max) V GS = 2.5V 40 V GS = 1.8V 51 mω Q g 11 nc Features Advance Trench
More informationNTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23
NTR47N Power MOSFET V,. A, Single N Channel, SOT Features Low R S(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb Free evice Applications Power Converters for Portables Battery Management
More informationNTMFS5C604NL. Power MOSFET. 60 V, 1.2 m, 276 A, Single N Channel
NTMFSC64NL Power MOSFET 6 V,. m, 76 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These
More informationAOL1422 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET Si44H PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (TYP.) 3.46 at V GS = 4.5 V 4.5 at V GS =.5 V 4.57 at V GS =.8 V 4 6 SOT-363 SC-7 Single (6 leads) S 4 5 5.7 nc FEATURES TrenchFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
P- 94036B SMPS MOSFET IRF747 Applications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor
More informationNVTFS5116PL. Power MOSFET. 60 V, 14 A, 52 m, Single P Channel
Power MOSFET 6 V, 4 A, 52 m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS56PLWF Wettable
More informationDual N & P-Channel 30V Power MOSFET with low on-resistance and fast switching performance. High energy efficiency and good thermal performance.
POWER MOFETs FOR TEPPER MOTOR INTERATE CIRCUIT TMC1320-LA ATAHEET ual N & P-Channel 30V Power MOFET with low on-resistance and fast switching performance. High energy efficiency and good thermal performance.
More informationN-Channel 60-V (D-S) MOSFET
N-Channel 6-V (-S) MOSFET TS7 PROUCT SUMMARY V S (V) R S(on) (Ω) I (ma) 6.5 at V GS = V SOT -5 G FEATURES Halogen-free According to IEC 69-- efinition Low On-Resistance:.5 Ω Low Threshold: V (typ.) Low
More informationNVTFS5124PL. Power MOSFET 60 V, 6 A, 260 m, Single P Channel
Power MOSFET V, A, m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTFS5PLWF Wettable
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET 2.5 mm Top View Marking code: A5 PowerPAK SC-7-6L Single 2.5 mm S 4 S 7 5 6 2 3 G Bottom View FEATURES TrenchFET Gen IV power MOSFET Optimized Q g, Q gd, and Q gd /Q gs ratio
More informationUNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers
More informationLinear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C
查询 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 P- 94243 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω
More informationSOT-23 SuperSOT TM -8 SO-8 SOT-223. = 25 C unless otherwise noted. Symbol Parameter N-Channel P-Channel Units V DSS
July 998 FS898A ual N & P-Channel Enhancement Mode Field Effect Transistor General escription Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's
More informationLNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.
Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 6 V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) 6 R S(on) () at V GS = V.98 R S(on) () at V GS = 4.5 V.22 I (A) 2 Configuration Single SO-8 FEATURES TrenchFET Power MOSFET AEC-Q Qualified
More informationFDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET
FS44A Single N-Channel, Logic-Level, PowerTrench MOSFET Features A, 3 V. Fast switching speed Low gate charge R S(ON) = 3.5 mω @ V GS = V R S(ON) = mω @ V GS = 4.5 V High performance trench technology
More informationSMK0990FD Advanced N-Ch Power MOSFET
z SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =900V Low gate charge: Q g =52nC (Typ.) Low drain-source On resistance: R DS(on) =1.4Ω
More information