FDG6304P Dual P-Channel, Digital FET
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1 uly 999 FG64P ual P-Channel, igital FET General escription Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. - V, -.4 A continuous, -. A peak. R S(ON) =. V GS = -4. V, R S(ON) =. V GS = -.7 V. Very low level gate drive requirements allowing direct operation in V circuits (V GS(th) <. V). Gate-Source Zener for ES ruggedness (>6kV Human Body Model). Compact industry standard SC7-6 surface mount package. SC7-6 SOT- SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT- S G.4 or 4 * 6 or SC7-6 G S or or 6 or 4 or * *The pinouts are symmetrical; pin and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings T A = unless otherwise noted Symbol Parameter FG64P Units V SS rain-source Voltage - V V GSS Gate-Source Voltage -8 V I rain/output Current - Continuous -.4 A - Pulsed -. P Maximum Power issipation (Note ). W,T STG Operating and Storage Temperature Range - to C ES Electrostatic ischarge Rating MIL-ST-88 Human Body Model ( pf / Ω) THERMAL CHARACTERISTICS 6. kv R θa Thermal Resistance, unction-to-ambient (Note ) 4 C/W FG64P Rev.E
2 Electrical Characteristics (T A = O C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = - µa - V BV SS / Breakdown Voltage Temp. Coefficient I = - µa, Referenced to o C - mv / o C I SS Zero Gate Voltage rain Current V S = - V, V GS = V - µa = C - µa I GSS Gate - Body Leakage Current V GS = -8 V, V S = V - na ON CHARACTERISTICS (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = - µa V V GS(th) / Gate Threshold Voltage Temp.Coefficient I = - µa, Referenced to o C mv / o C R S(ON) Static rain-source On-Resistance V GS = -4. V, I = -.4 A.8. Ω =..9 V GS = -.7 V, I = -. A.. I (ON) On-State rain Current V GS = -4. V, V S = - V -. A g FS Forward Transconductance V S = - V, I = -.4 A.9 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = V, V GS = V, 6 pf C oss Output Capacitance f =. MHz 4 pf C rss Reverse Transfer Capacitance pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time V = - V, I = -. A, 7 ns t r Turn - On Rise Time V GS = -4. V, R GEN = 6 Ω 8 6 ns t (off) Turn - Off elay Time 8 ns t f Turn - Off Fall Time 6 ns Q g Total Gate Charge V S = - V, I = -.4 A,.. nc Q gs Gate-Source Charge V GS = -4. V. nc Q gd Gate-rain Charge.9 nc RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous Source Current -. A V S rain-source iode Forward Voltage V GS = V, I S = -. A (Note ) V Notes:. R θa is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θc is guaranteed by design while R θca is determined by the user's board design. R θa = 4 O C/W on minimum pad mounting on FR-4 board in still air.. Pulse Test: Pulse Width < µs, uty Cycle <.%. FG64P Rev.E
3 S Typical Electrical Characteristics -I, RAIN-SOURCE CURRENT (A) V GS =-4.V -.V -.7V -.V -.V 4 -V S, RAIN-SOURCE VOLTAGE (V) -.V R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.. V GS = -.V -.V -.7V I, RAIN CURRENT (A) -.V -.V -4.V Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = -.4A V GS= -4.V T, UNCTION TEMPERATURE ( C) R S(ON),ON-RESISTANCE(OHM) 4 4 -V GS, GATE TO SOURCE VOLTAGE (V) I =-.A T = C Figure. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. -I, RAIN CURRENT (A) V = -V S T = - C... -V, GATE TO SOURCE VOLTAGE (V) GS -I, REVERSE RAIN CURRENT (A)... V GS= V T = - C V S, BOY IOE FORWAR VOLTAGE (V) Figure. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FG64P Rev.E
4 Typical Electrical Characteristics -V GS, GATE-SOURCE VOLTAGE (V) 4 I = -.4A V = -V S Q g, GATE CHARGE (nc) -V -V CAPACITANCE (pf) 8 f = MHz V GS = V.. -V S, RAIN TO SOURCE VOLTAGE (V) C iss C oss C rss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. -I, RAIN CURRENT (A). RS(ON) LIMIT.. V GS = -4.V SINGLE PULSE R θa= 4 C AT A = C s s ms - V S, RAIN-SOURCE VOLTAGE (V) ms ms POWER (W) SINGLE PULSE TIME (SEC) SINGLE PULSE R θa=4 C/W T A= Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse..... t, TIME (sec) P(pk) R θa (t) = r(t) * R θa R θa =4 C/W t t - T A = P * R θa (t) uty Cycle, = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note. Transient thermalresponse will change depending on the circuit board design. FG64P Rev.E
5 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISCLAIMER ACEx CoolFET CROSSVOLT E CMOS TM FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT - SuperSOT -6 SuperSOT -8 TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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200V Logic N-Channel MOSFET QFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
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800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
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FDD4685 V P-Channel PowerTrench MOSFET V, 3A, 7mΩ Features Max r DS(on) = 7mΩ at V GS = V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r
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FDZ7296 3V N-Channel PowerTrench BGA MOSFET General Description Combining Fairchild s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and R DS(ON).
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150V P-Channel MOSFET QFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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NS3N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's
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April 995 BS70 N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
More informationFDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features
FDD8447L 4V N-Channel PowerTrench MOSFET 4V, 5A, 8.5mΩ Features Max r DS(on) = 8.5mΩ at V GS = V, I D = 4A Max r DS(on) =.mω at V GS = 4.5V, I D = A Fast Switching RoHS Compliant G S D-PAK TO-252 (TO-252)
More informationDescription. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA70N20 200V N-Channel MOSFET Features 70A, 200V, R DS(on) = 0.035Ω @ = 10 V Low gate charge ( typical 66 nc) Low C rss ( typical 89 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationDescription. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP61N20 200V N-Channel MOSFET Features 61A, 200V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 58 nc) Low C rss ( typical 80 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
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SGLN5D September 2 IGBT SGLN5D General Description Fairchild s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGLN5D is designed for the Induction Heating applications.
More informationIRFS650B IRFS650B. 200V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics. November 2001.
200V N-Channel MOSFET November 2001 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced
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FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D PN PN PN TO-92 This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance
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500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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