FDC6303N Digital FET, Dual N-Channel

Transcription

1 August 997 FC6N igital FET, ual N-Channel General escription Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series. V,.68 A continuous, A Peak. R S(ON) =.6 V GS =.7 V R S(ON) =. V GS =. V. Very low level gate drive requirements allowing direct operation in V circuits. V GS(th) <. V. Gate-Source Zener for ES ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors (IMHxA series) with one MOS FET. SOT- SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT- SOIC-6 Mark:. 6 Absolute Maximum Ratings T A = C unless otherwise noted Symbol Parameter FC6N Units V SS rain-source Voltage V V GSS Gate-Source Voltage 8 V I rain Current - Continuous.68 A - Pulsed P Maximum Power issipation (Note a).9 W (Note b).7,t STG Operating and Storage Temperature Range - to C ES Electrostatic ischarge Rating MIL-ST-88 Human Body Model (pf / Ohm) THERMAL CHARACTERISTICS 6. kv R θja Thermal Resistance, Junction-to-Ambient (Note a) C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 6 C/W 997 Fairchild Semiconductor Corporation FC6N Rev.C

2 MOS Electrical Characteristics (T A = O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = µa V BV SS / Breakdown Voltage Temp. Coefficient I = µa, Referenced to o C 6 mv / o C I SS Zero Gate Voltage rain Current V S = V, V GS = V µa = C µa I GSS Gate - Body Leakage Current V GS = 8 V, V S = V na ON CHARACTERISTICS (Note ) V GS(th) / Gate Threshold Voltage Temp.Coefficient I = µa, Referenced to o C -.6 mv / o C V GS(th) Gate Threshold Voltage V S = V GS, I = µa.6.8. V R S(ON) Static rain-source On-Resistance V GS =. V, I =. A.. Ω = C..8 V GS =.7 V, I =. A..6 I (ON) On-State rain Current V GS =.7 V, V S = V. A g FS Forward Transconductance V S = V, I =. A. S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = V, V GS = V, pf C oss Output Capacitance f =. MHz 8 pf C rss Reverse Transfer Capacitance 9 pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time V = 6 V, I =. A, 6 ns t r Turn - On Rise Time V GS =. V, R GEN = Ω 8. 8 ns t (off) Turn - Off elay Time 7 ns t f Turn - Off Fall Time ns Q g Total Gate Charge V S = V, I =. A,.6. nc Q gs Gate-Source Charge V GS =. V.8 nc Q gd Gate-rain Charge. nc RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous Source Current. A V S rain-source iode Forward Voltage V GS = V, I S =. A (Note ).8. V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. R θja shown below for single device operation on FR- in still air. a. O C/W on a. in pad of oz copper. b. 8 O C/W on a. in of pad of oz copper.. Pulse Test: Pulse Width < µs, uty Cycle <.%. FC6N Rev.C

3 S Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) V GS =.V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE. V =.V GS V S, RAIN-SOURCE VOLTAGE (V) I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I =. A V GS =. V T, JUNCTION TEMPERATURE ( C) J R S(on), ON-RESISTANCE (OHM) C C.... V GS, GATE TO SOURCE VOLTAGE (V) I=.A Figure. On-Resistance Variation with Temperature. Figure. On Resistance Variation with Gate-To- Source Voltage. I, RAIN CURRENT (A) V =.V S T = - C J C C I, REVERSE RAIN CURRENT (A)... V GS = V T = C J C - C... V GS, GATE TO SOURCE VOLTAGE (V) V S, BOY IOE FORWAR VOLTAGE (V) Figure. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FC6N Rev.C

4 Typical Electrical And Thermal Characteristics V GS, GATE-SOURCE VOLTAGE (V) I =.A Q g, GATE CHARGE (nc) V S = V V V CAPACITANCE (pf) f = MHz V GS = V.. V, RAIN TO SOURCE VOLTAGE (V) S C iss C oss C rss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I, RAIN CURRENT (A)... RS(ON) LIMIT V GS =.V SINGLE PULSE R θja = See note b T A = C.... C s V S, RAI N-SOURCE VOLTAGE (V) ms ms ms µs POWER (W).. SINGLE PULSE TIME (SEC) SINGLE PULSE R θja=see note b T A = C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE..... = Single Pulse..... t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R = See Note b θja t t - T = P * R (t) A θja uty Cycle, = t / t Figure. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note b.transient thermal response will change depending on the circuit board design. FC6N Rev.C

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