Features. Max r DS(on) = 50 V GS = -10 V, I D = -4A. Max r DS(on) = 75 V GS = -4.5 V, I D = -3.4A. RoHS Compliant
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1 FC58AP Single P-Channel Logic Level PowerTrench MOSFET -3V, -A, 5mΩ General escription This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Load switch Battery protection C/C conversion PIN S G SuperSOT TM - Features Max r S(on) = 5 V GS = - V, I = -A January Max r S(on) = 75 V GS = -.5 V, I = -3.A Low Gate Charge High performance trench technology for extremely low r S(on) RoHS Compliant 3 5 Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain-source Voltage -3 V V GS Gate-Source Voltage ±5 V I rain Current - Continuous (Note a) - - Pulsed - A P Maximum Power dissipation (Note a). (Note b).8 W T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 3 C/W Package Marking and Ordering Information evice Marking evice Reel Size Tape Width Quantity.58A FC58AP 7inch 8mm 3 units Fairchild Semiconductor Corporation FC58AP Rev. B (W)
2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain-source Breakdown Voltage I = -5µA, V GS = V -3 V BV SS Breakdown Voltage Temperature I = -5µA, T J Coefficient Referenced to 5 C - mv/ C I SS Zero Gate Voltage rain Current V GS = V, V S = -V - µa I GSS Gate-Body Leakage V GS = ±5V, V S = V ± na On Characteristics (Note ) V GS(TH) Gate Threshold Voltage V S = V GS, I = -5µA V V GS(TH) T J r S(on) Gate Threshold Voltage Temperature Coefficient Static rain-source On-Resistance I = -5µA, mv/ C Referenced to 5 C I = -A, V GS = -V 5 I = -3.A, V GS = -.5V 7 75 mω I = -A, V GS = -V, 7 T J = 5 C I (ON) On-State rain Current V GS = -V, V S = -5V - A g FS Forward Transconductance I = -A, V S = -5V 8. S ynamic Characteristics C iss Input Capacitance 7 pf V S = -5V, V GS = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf Switching Characteristics (Note ) t d(on) Turn-On elay Time 7 ns t r Turn-On Rise Time V = -5V, I = -A ns t d(off) Turn-Off elay Time V GS = -V, R GEN = Ω 9 ns t f Turn-Off Fall Time ns Q g Total Gate Charge 8. nc V S = -5V, I = -A, Q gs Gate-Source Charge. nc V GS = -5V Q gd Gate-rain Charge nc rain-source iode Characteristics and Maximum Ratings I S Maximum Continuous rain-source iode Forward Current -.3 A V S rain-source iode Forward Voltage V GS = V, I S = -.3 A (Note ) V Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 78 o C/W when mounted on a in pad of oz copper b) 5 o C/W whe mounted on a minimum pad of oz copper Scale : on letter size paper : Pulse Test: Pulse Width < 3 µs, uty Cycle <.% FC58AP Rev. B (W)
3 Typical Characteristics -I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 5 5 V GS = -V -.V 3 5 Figure Figure 3. I = -.A V GS = -V -5.V -.5V -.V -3.5V -V S, RAIN TO SOURCE VOLTAGE (V) -3.V NORMALIZE RAIN TO SOURCE ON-RESISTANCE On-Region Characteristics Figure T J, JUNCTION TEMPERATURE ( o C) Normalized On-Resistance vs Junction Temperature rs(on), RAIN TO SOURCE ON RESISTANCE (OHM).8... V GS = -.5V -5.V -.V -7.V Figure. -I, RAIN CURRENT (A) -8.V -V Normalized On-Resistance vs rain Current and Gate Voltage T J = 5 o C T J = 5 o C. 8 -V GS, GATE TO SOURCE VOLTAGE (V) I = -.A On-Resistance vs Gate to Source Voltage -I, RAIN CURRENT (A) V S = -5V T J = -55 o C 5 o C 5 o C -IS, REVERSE RAIN CURRENT (A)... V GS = V T J = 5 o C 5 o C -55 o C 3 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure. -V S, BOY IOE FORWAR VOLTAGE (V) Source to rain iode Forward Voltage vs Source Current FC58AP Rev. B (W) 3
4 Typical Characteristics -VGS, GATE-SOURCE VOLTAGE (V) -I, RAIN CURRENT (A) 8 8 Figure 7.. Figure 9. I = -A V S = -5V r S(on) LIMIT Q g, GATE CHARGE (nc) -5V -V CAPACITANCE (pf) V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage V GS = -V R θja = 5 o C/W T A = 5 o C us ms ms.. -V S, RAIN TO SOURCE VOLTAGE (V) Forward Bias Safe Operating Area Figure. ms s C P(pk), PEAK TRANSIENT POWER (W) 8 C rss C oss C iss f = MHz V GS = V.. t, PULSE WITH (s) R θja = 5 C/W T A = 5 C Single Pulse Maximum Power issipation r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE.. = t, RECTANGULAR PULSE URATION R θja (t) = r(t) + R θja P(pk) R θja = 5 o C/W t t T J - T A = P * R θja (t) uty Cycle, = t / t Figure. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. FC58AP Rev. B (W)
5 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FAST ActiveArray FASTr Bottomless FPS Build it Now FRFET CoolFET GlobalOptoisolator CROSSVOLT GTO OME HiSeC EcoSPARK I C E CMOS i-lo EnSigna Impliedisconnect FACT IntelliMAX FACT Quiet Series Across the board. Around the world. The Power Franchise Programmable Active roop ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power7 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect μseres ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition SuperSOT - SuperSOT -8 SyncFET TCM TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX Wire Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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