FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
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1 FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features 9.5A, 600V, R DS(on) = = 10 V Low gate charge ( typical 44 nc) Low Crss ( typical 18 pf) Fast switching 100% avalanche tested Improved dv/dt capability G D S TO-220 FQP Series GD S Description July 2005 QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220F FQPF Series G D S Absolute Maximum Ratings Symbol Parameter FQP10N60C FQPF10N60C Units S Drain-Source Voltage 600 V Drain Current - Continuous (T C = 25 C) * A - Continuous (T C = 100 C) * A M Drain Current - Pulsed (Note 1) * A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 700 mj I AR Avalanche Current (Note 1) 9.5 A E AR Repetitive Avalanche Energy (Note 1) 15.6 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) W - Derate above 25 C W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 300 C 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP10N60C FQPF10N60C Units R θjc Thermal Resistance, Junction-to-Case C/W R θcs Thermal Resistance, Case-to-Sink Typ C/W R θja Thermal Resistance, Junction-to-Ambient C/W 2005 Fairchild Semiconductor Corporation 1
2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FQP10N60C FQP10N60C TO FQPF10N60C FQPF10N60C TO-220F Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 µa V BS / T J Breakdown Voltage Temperature Coefficient = 250 µa, Referenced to 25 C V/ C SS Zero Gate Voltage Drain Current = 600 V, = 0 V µa = 480 V, T C = 125 C µa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, = 250 µa V R DS(on) Static Drain-Source On-Resistance = 10 V, = 4.75 A W g FS Forward Transconductance = 40 V, = 4.75 A (Note 4) S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 300 V, = 9.5A, ns t r Turn-On Rise Time R G = 25 Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4, 5) ns Q g Total Gate Charge = 480 V, = 9.5A, nc Q gs Gate-Source Charge = 10 V nc Q gd Gate-Drain Charge (Note 4, 5) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 9.5 A V t rr Reverse Recovery Time = 0 V, I S = 9.5 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 14.2mH, I AS = 9.5 A, V DD = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 9.5A, di/dt 200A/µs, V DD BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature 2
3 Typical Performance Characteristics Figure 1. On-Region Characteristics 10 1 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 1, Drain-Source Voltage [V] µs Pulse Test 2. T C = 25 C Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 Figure 2. Transfer Characteristics C 25 C -55 C 1. = 40V µs Pulse Test , Gate-Source Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue R DS(ON) [Ω], Drain-Source On-Resistance 1.5 = 10V = 20V * Note : T J = 25 C R, Reverse Drain Current [A] C 25 C 1. = 0V µs Pulse Test V SD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3000 C iss = C gs + C gd (C ds = shorted) 12 Capacitance [pf] C iss C oss C rss C oss = C ds + C gd C rss = C gd , Drain-Source Voltage [V] * Notes ; 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] = 300V = 480V = 120V * Note : = 9.5A Q G, Total Gate Charge [nc] 3
4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage = 0 V 2. = 250µA T J, Junction Temperature [ C] T J, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP10N60C for FQPF10N60C Operation in This Area is Limited by R DS(on) 1 ms 10 ms 100 ms DC 1. T C = 25 C 2. T J = 150 C 3. Single Pulse 100 µs 10 µs , Drain-Source Voltage [V] R DS(ON), (Normalized) Drain-Source On-Resistance Operation in This Area is Limited by R DS(on) 1. T C = 25 C 2. T J = 150 C 3. Single Pulse 1. = 10 V 2. = 4.75 A 10 µs 100 µs 1 ms 10 ms 100 ms DC , Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature T C, Case Temperature [ C] 4
5 Typical Performance Characteristics (Continued) Figure Transient Thermal Response Curve for FQP10N60C Z θjc (t), Thermal Response 10-2 D= single pulse * N otes : 1. Z θ JC (t) = 0.8 C /W Max. 2. D u ty F actor, D = t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) t 1, Square W ave Pulse Duration [sec] Figure Transient Thermal Response Curve for FQPF10N60C P DM t 1 t 2 D=0.5 Z θjc (t), Thermal Response single pulse * N otes : 1. Z θ JC (t) = 2.5 C/W Max. 2. D u ty F acto r, D = t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t t 1, Square W ave Pulse Duration [sec] 5
6 12V 200nF 3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT 10V Q gs DUT Resistive Switching Test Circuit & Waveforms R L V DS 90% Q g Q gd Charge V DD R G 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI 2 2 AS BS BS -V DD BS I AS R G V DD (t) 10V DUT V DD (t) t p t p Time 6
7 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I SD _ L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 7
8 Mechanical Dimensions (1.70) ± ± ±0.10 (1.46) (1.00) 1.27 ± ±0.20 (8.70) ø3.60 ±0.10 (45 ) (3.00) (3.70) 1.52 ±0.10 TO ± ± ± MAX ± TYP [2.54 ±0.20] 0.80 ± TYP [2.54 ±0.20] ± ±0.20 Dimensions in Millimeters 8
9 Mechanical Dimensions (Continued) ± ±0.10 TO-220F ±0.20 ø3.18 ± ±0.20 (7.00) (0.70) 6.68 ±0.20 (1.00x45 ) ± ±0.30 MAX ±0.10 (30 ) 0.35 ±0.10 # ± TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ± ±0.20 Dimensions in Millimeters 9
10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect IntelliMAX Across the board. Around the world. The Power Franchise Programmable Active Droop ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX Wire FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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