RFP2N20L. 2A, 200V, Ohm, Logic Level, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

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1 RFPNL Data Sheet January A, V,.5 Ohm, Logic Level, N-Channel Power MOSFET The RFPNL N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the V - 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA95. Ordering Information PART NUMBER PACKAGE BRAND RFPNL TO-AB RFPNL NOTE: When ordering, include the entire part number. Features A, V r DS(ON) =.5Ω Design Optimized for 5V Gate Drives Can be Driven Directly from QMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB Guidelines for Soldering Surface Mount Components to PC Boards Symbol D G S Packaging JEDEC TO-AB SOURCE DRAIN GATE DRAIN (FLANGE) Fairchild Semiconductor Corporation RFPNL Rev. B

2 Absolute Maximum Ratings T C = 5 o C, Unless Otherwise Specified RFPNL Drain to Source Voltage (Note ) V DSS V Drain to Gate Voltage R GS = KΩ (Note ) V DGR V Gate to Source Voltage V GS ± V Drain Current, RMS Continuous I D A Pulsed (Note ) I DM A Maximum Power Dissipation P D 5 W Derate Linearly Above T C = 5 o C W/ o C Operating and Storage Temperature T J, T STG -55 to 5 o C Maximum Temperature for Soldering Leads at.6in (.6mm) from Case for s T L Package Body for s, See Techbrief T pkg 6 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE:. T J = 5 o C to 5 o C. RFPNL UNITS o C o C Electrical Specifications T C = 5 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS I D = 5µA, V GS = V - - V Gate to Threshold Voltage V GS(TH) V GS = V DS, I D = 5µA - V Zero Gate Voltage Drain Current I DSS V DS = Rated BV DSS, V GS = V - - µa V DS =.8 x Rated BV DSS, V GS = V, T C = 5 o C µa Gate to Source Leakage Current I GSS V GS = ±V, V DS = - - ± na Drain to Source On Voltage (Note ) V DS(ON) I D = A, V Drain to Source On Resistance (Note ) r DS(ON) I D = A, (Figures 6, 7) Ω Turn-On Delay Time t d(on) I D = A, V DD = V, R G = 6.5Ω, - 5 ns Rise Time t r R L = 5Ω (Figures,, ) - ns Turn-Off Delay Time t d(off) - 5 ns Fall Time t f - 5 ns Input Capacitance C ISS V GS = V, V DS = 5V, f = MHz - - pf Output Capacitance C OSS (Figure 9) pf Reverse Transfer Capacitance C RSS pf Thermal Resistance Junction to Case R θjc o C/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note ) V SD I SD = A - -. V Reverse Recovery Time t rr I SD = A, dl SD /dt = 5A/µs - - ns NOTES:. Pulsed: pulse duration = µs max, duty cycle = %.. Repetitive rating: pulse width limited by maximum junction temperature. Fairchild Semiconductor Corporation RFPNL Rev. B

3 RFPNL Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER T C, CASE TEMPERATURE ( o C) FIGURE. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE T C, CASE TEMPERATURE ( o C) FIGURE. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE. OPERATION IN THIS AREA LIMITED BY r DS(ON) T J = MAX RATED T C = 5 o C PULSE DURATION = 8µs DUTY CYCLE T C = 5 o =.5% MAX C V GS = V V GS = V V GS = V V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) V DS, DRAIN TO SOURCE VOLTAGE (V) FIGURE. FORWARD BIAS SAFE OPERATING AREA FIGURE. SATURATION CHARACTERISTICS I DS(ON), DRAIN TO SOURCE CURRENT (A) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V DS = 5V 5 o C - o C 5 o C - o C 5 o C 5 V GS, GATE TO SOURCE VOLTAGE (V) r DS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) 5 PULSE DURATION = 8µs DUTY CYCLE =.5% MAX 5 o C 5 o C - o C I D, DRAIN CURRENT (A) FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT Fairchild Semiconductor Corporation RFPNL Rev. B

4 RFPNL Typical Performance Curves Unless Otherwise Specified (Continued) NORMALIZED DRAIN TO SOURCE ON RESISTANCE I D = A NORMALIZED GATE THRESHOLD VOLTAGE I D = 5µA T J, JUNCTION TEMPERATURE ( o C) T J, JUNCTION TEMPERATURE ( o C) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE C, CAPACITANCE (pf) 8 6 V GS = V, f = MHz C ISS = C GS + C GD C RSS = C GD C OSS C DS + C GD C ISS C OSS C RSS 5 V DS, DRAIN TO SOURCE VOLTAGE (V) V DS, DRAIN TO SOURCE VOLTSAGE (V) 5 5 R L = Ω I G(REF) =.9mA GATE SOURCE V DD = BV DSS VOLTAGE V DD = BV DSS.75BV DSS.5BV DSS.5BV DSS DRAIN SOURCEVOLTAGE I G(REF) I t, TIME (µs) 8 G(REF) I G(ACT) I G(ACT) 8 6 V GS, GATE TO SOURCE VOLTAGE (V) FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Fairchild Applications Notes AN75 and AN76 FIGURE. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms t ON t d(on) t OFF t d(off) R L t r t f V DS 9% 9% + R G V DD - % % DUT 9% V GS V GS % 5% PULSE WIDTH 5% FIGURE. SWITCHING TIME TEST CIRCUIT FIGURE. RESISTIVE SWITCHING WAVEFORMS Fairchild Semiconductor Corporation RFPNL Rev. B

5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power7 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START STAR*POWER Stealth SuperSOT - SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H

RFD4N06L, RFD4N06LSM. 4A, 60V, Ohm, Logic Level, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging

RFD4N06L, RFD4N06LSM. 4A, 60V, Ohm, Logic Level, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging RFDNL, RFDNLSM Data Sheet January A, V,. Ohm, Logic Level, N-Channel Power MOSFETs The RFDNL, RFDNLSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for