Is Now Part of To learn more about ON Semiconductor, please visit our website at

Transcription

1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 February 998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 5.5 A, 3 V. R DS(ON) =.3 V GS = 4.5 V R DS(ON) =.38 V GS = 2.5 V. High density cell design for extremely low R DS(ON). Combines low gate threshold (fully enhanced at 2.5V) with high breakdown voltage of 3 V. High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT-223 SOIC-6 D D2 D SO-8 D2 FDS 8926A G2 S2 G S pin Absolute Maximum Ratings T A = 25 o C unless other wise noted Symbol Parameter FDS8926A Units V DSS Drain-Source Voltage 3 V V GSS Gate-Source Voltage ±8 V I D Drain Current - Continuous (Note a) 5.5 A - Pulsed 2 P D Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note a).6 (Note b) (Note c).9 T J,T STG Operating and Storage Temperature Range -55 to 5 C THERMAL CHARACTERISTICS R θja Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 4 C/W 998 Fairchild Semiconductor Corporation FDS8926A Rev.B

3 Electrical Characteristics (T A = 25 O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = V, I D = 25 µa 3 V BV DSS / T J Breakdown Voltage Temp. Coefficient I D = 25 µa, Referenced to 25 o C 32 mv / o C I DSS Zero Gate Voltage Drain Current V DS = 24 V, V GS = V µa T J = 55 C µa I GSSF Gate - Body Leakage, Forward V GS = 8 V, V DS = V na I GSSR Gate - Body Leakage, Reverse V GS = -8 V, V DS = V - na ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa.4.67 V V GS(th) / T J Gate Threshold Voltage Temp. Coefficient I D = 25 µa, Referenced to 25 o C -3 mv / o C R DS(ON) Static Drain-Source On-Resistance V GS = 4.5 V, I D = 5.5 A.25.3 Ω T J =25 C V GS = 2.5 V, I D = 4.5 A.3.38 I D(ON) On-State Drain Current V GS = 4.5 V, V DS = 5 V 2 A g FS Forward Transconductance V DS = 5 V, I D = 5.5 A 2 S DYNAMIC CH ARACTERISTICS C iss Input Capacitance V DS = V, V GS = V, 9 pf C oss Output Capacitance f =. MHz 4 pf C rss Reverse Transfer Capacitance pf SWITCHING CHARACTERISTICS (Note 2) t D(on) Turn - On Delay Time V DS = 6 V, I D = A 6 2 ns t r Turn - On Rise Time V GS = 4.5 V, R GEN = 6 Ω 9 3 t D(off) Turn - Off Delay Time t f Turn - Off Fall Time 3 24 Q g Total Gate Charge V DS = V, I D = 5.5 A, nc Q gs Gate-Source Charge V GS = 4.5 V 2 Q gd Gate-Drain Charge 6.3 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I S Maximum Continuous Drain-Source Diode Forward Current.3 A V SD Drain-Source Diode Forward Voltage V GS = V, I S =.3 A (Note 2).68.2 V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 78 O C/W on a.5 in 2 pad of 2oz copper. b. 25 O C/W on a.2 in 2 pad of 2oz copper. c. 35 O C/W on a.3 in 2 pad of 2oz copper. Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.%. FDS8926A Rev.B

4 S D Typical Electrical Characteristics I, DRAIN-SOURCE CURRENT (A) D V GS =4.5V 3.5V 3.V 2.5V 2.V.5V V DS, DRAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V = 2.V GS 2.5V 3.V I D, DRAIN CURRENT (A) 3.5V Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 4.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I = 5.5 A D V GS = 4.5 V T J, JUNCTION TEMPERATURE ( C) R DS(ON), ON-RESISTANCE (OHM) T = 25 C A T = 25 C A V, GATE TO SOURCE VOLTAGE (V) GS I = 2.8A D Figure 3. On-Resistance Variation With Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I, DRAIN CURRENT (A) V =5V DS T = -55 C A 25 C 25 C V, GATE TO SOURCE VOLTAGE (V) GS I, REVERSE DRAIN CURRENT (A) 2 V GS = V... T = 25 C A 25 C -55 C V, BODY DIODE FORWARD VOLTAGE (V) SD Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8926A Rev.B

5 Typical Electrical And Thermal Characteristics V GS, GATE-SOURCE VOLTAGE (V) I = 5.5A D V DS = 5V V 5V CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss Q g, GATE CHARGE (nc) V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I, DRAIN CURRENT (A) D RDS(ON) LIMIT ms s s DC ms. V GS = 4.5V SINGLE PULSE.3 R θja=35 C/W T A= 25 C V DS, DRAI N-SOURCE VOLTAGE (V) us ms POWER (W) SINGLE PULSE TIME (SEC) SINGLE PULSE R θja =35 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = Single Pulse t, TIME (sec) P(pk) R θja (t) = r(t) * R R =35 C/W θja θja t t 2 T J - T = P * R (t) A θja Duty Cycle, D = t /t2 Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. FDS8926A Rev.B

6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER ACEx CoolFET CROSSVOLT E 2 CMOS TM FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 TinyLogic UHC VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FDS8926A