FDPF18N20FT-G N-Channel UniFET TM FRFET MOSFET
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1 FDPF8N20FT-G N-Channel UniFET TM FRFET MOSFET 200 V, 8 A, 40 m Features R DS(on) = 29 mω V GS = 0 V, I D = 9 A Low Gate Charge (Typ. 20 nc) Low C rss (Typ. 24 pf) 00% Avalanche Tested Improve dv/dt Capability RoHS Compliant Applications LCD/LED TV Consumer Appliances Lighting Uninterruptible Power Supply AC-DC Power Supply G DS TO-220F Description UniFET TM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode s reverse recovery performance of UniFET FRFET has been enhanced by lifetime control. Its t rr is less than 00nsec and the reverse dv/dt immunity is 5V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. G D MOSFET Maximum Ratings T C = 25 o C unless otherwise noted Symbol Parameter FDPF8N20FT-G Unit V DSS Drain to Source Voltage 200 V V GSS Gate to Source Voltage ±30 V I D Drain Current Thermal Characteristics -Continuous (T C = 25 o C) 8* -Continuous (T C = 00 o C) 0.8* I DM Drain Current - Pulsed (Note ) 72* A E AS Single Pulsed Avalanche Energy (Note 2) 324 mj I AR Avalanche Current (Note ) 8 A E AR Repetitive Avalanche Energy (Note ) 0 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation S (T C = 25 o C) 35 W - Derate above 25 o C 0.27 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Drain current limited by maximum junction temperature Symbol Parameter FDPF8N20FT-G Unit R θjc Thermal Resistance, Junction to Case, Max. 3.6 R θcs Thermal Resistance, Case to Sink, Typ. 0.5 R θja Thermal Resistance, Junction to Ambient, Max A o C/W 202 Semiconductor Components Industries, LLC. September-207, Rev. 3 Publication Order Number: FDPF8N20FT-G/D
2 Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Eco Status Reel Size Tape Width Quantity FDPF8N20FT FDPF8N20F-G TO-220F Green/RoHS Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V, T J = 25 o C V BV DSS T J I DSS On Characteristics Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Dynamic Characteristics Switching Characteristics I D = 250µA, Referenced to 25 o C V/ o C V DS = 200V, V GS = 0V V DS = 60V, T C = 25 o C I GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±00 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250µA V R DS(on) Static Drain to Source On Resistance V GS = 0V, I D = 9A Ω g FS Forward Transconductance V DS = 20V, I D = 9A (Note 4) S C iss Input Capacitance pf V DS = 25V, V GS = 0V C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf Q g(tot) Total Gate Charge at 0V nc Q gs Gate to Source Gate Charge V DS = 60V, I D = 8A nc Q gd Gate to Drain Miller Charge V GS = 0V (Note 4, 5) nc t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 00V, I D = 8A ns t d(off) Turn-Off Delay Time R G = 25Ω ns t f Turn-Off Fall Time (Note 4, 5) ns µa Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current A I SM Maximum Pulsed Drain to Source Diode Forward Current A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 8A V t rr Reverse Recovery Time V GS = 0V, I SD = 8A ns Q rr Reverse Recovery Charge di F /dt = 00A/µs (Note 4) nc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, I AS = 8A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 8A, di/dt 200A/µs, V DD BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 300µs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2
3 Typical Performance Characteristics ID,Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance Figure. On-Region Characteristics 50 0 V GS = 0.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V. 250µs Pulse Test 2. T C = 25 o C 0. 0 V DS,Drain-Source Voltage[V] Figure 2. Transfer Characteristics 0 50 o C. V DS = 20V µs Pulse Test V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature V GS = 0V V GS = 20V *Note: T J = 25 o C I D, Drain Current [A] ID,Drain Current[A] IS, Reverse Drain Current [A] o C 25 o C 25 o C. V GS = 0V µs Pulse Test V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss *Note:. V GS = 0V 2. f = MHz VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics V DS = 40V V DS = 00V V DS = 60V C rss V DS, Drain-Source Voltage [V] *Note: I D = 8A Q g, Total Gate Charge [nc] 3
4 Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature ID, Drain Current [A] V GS = 0V 2. I D = 250µA T J, Junction Temperature [ o C] Figure 9. Maximum Drain Current vs. Case Temperature Figure 8. Maximum Safe Operating Area - FDP8N20F ID, Drain Current [A] Operation in This Area is Limited by R DS(on). T C = 25 o C 2. T J = 50 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 20µs 00µs ms 0ms DC T C, Case Temperature [ o C] Figure 0. Transient Thermal Response Curve - FDP8N20F Thermal Response [Z θjc ] Single pulse P DM t t 2. Z θjc (t) = 3.0 o C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) Rectangular Pulse Duration [sec] 4
5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5
6 V GS ( Driver ) Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I SD V DS _ L Driver R G Same Type as DUT V GS dv/dt controlled by RG I SD controlled by pulse period Gate Pulse Width D = Gate Pulse Period V DD 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 6
7 Mechanical Dimensions TO-220M03 Dimensions in Millimeters 7
8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 800 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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More informationFeatures S 1. TA=25 o C unless otherwise noted
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More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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