FCH190N65F-F085 N-Channel SuperFET II FRFET MOSFET

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1 FCH9N65F-F85 N-Channel SuperFET II FRFET MOSFET 65 V, 2.6 A, 9 mω Features Typical R DS(on) = 48 mω at = V, I D = A Typical Q g(tot) = 63 nc at = V, I D = A UIS Capability Qualified to AEC Q RoHS Compliant Description SuperFET II MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive. SuperFET II FRFET MOSFET s optimized body diode reverse recovery performance can remove additional component and improve system reliability. G D S Application TO-247 Automotive On Board Charger Automotive DC/DC converter for HEV G D S Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 65 V Gate to Source Voltage ±2 V I D Drain Current - Continuous ( =) (Note ) 2.6 A Pulsed Drain Current See Fig 4 A E AS Single Pulse Avalanche Rating (Note 2) 4 mj dv/dt MOSFET dv/dt Peak Diode Recovery dv/dt (Note 3) 5 P D Power Dissipation 28 W Derate Above 25 o C.67 W/ o C T J, T STG Operating and Storage Temperature -55 to + 5 o C R θjc Maximum Thermal Resistance Junction to Case.6 o C/W R θja Maximum Thermal Resistance Junction to Ambient (Note 4) 4 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCH9N65F FCH9N65F-F85 TO Notes: : Current is limited by bondwire configuration. 2: Starting T J = 25 C, L = 5mH, I AS = 4A, V DD = V during inductor charging and V DD = V during time in avalanche. 3: I SD A, di/dt 2 A/us, V DD 38V, starting T J = 25 C. 4: R θja is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design, while R θja is determined by the board design. The maximum rating presented here is based on mounting on a in 2 pad of 2oz copper. V/ns 24 Semiconductor Components Industries, LLC. September-27, Rev. 2 Publication Order Number: FCH9N65F-F85/D

2 Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 25μA, = V V I DSS Drain to Source Leakage Current On Characteristics Dynamic Characteristics V DS = 65V, T J = 25 o C - - μa = V T J = 5 o C(Note 5) - - ma I GSS Gate to Source Leakage Current = ±2V - - ± na (th) Gate to Source Threshold Voltage = V DS, I D = 25μA V r DS(on) Drain to Source On Resistance I D = 27A, = V T J = 25 o C mω T J = 5 o C(Note 5) mω C iss Input Capacitance pf V DS = 25V, = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance f = MHz Ω Q g(tot) Total Gate Charge nc V DD = 38V Q g(th) Threshold Gate Charge nc I D = A Q gs Gate to Source Gate Charge nc = V Q gd Gate to Drain Miller Charge nc Switching Characteristics t on Turn-On Time - 4 ns t d(on) Turn-On Delay Time ns t r Rise Time V DD = 38V, I D = A, ns t d(off) Turn-Off Delay Time = V, R G = 4.7Ω ns t f Fall Time ns t off Turn-Off Time ns Drain-Source Diode Characteristics V SD Source to Drain Diode Voltage I SD = A, = V V T rr Reverse Recovery Time I F = A, di SD /dt = A/μs ns Q rr Reverse Recovery Charge V DD = 52V nc Notes: 5: The maximum value is specified by design at T J = 5 C. Product is not tested to this condition in production. 2

3 Typical Characteristics POWER DISSIPATION MULTIPLIER T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2. DUTY CYCLE - DESCENDING ORDER D = SINGLE PULSE = V T C, CASE TEMPERATURE( o C) Figure 2. Maximum Continuous Drain Current vs. Case Temperature P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θjc x R θjc + T C t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance IDM, PEAK CURRENT (A) 5 = V T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 5 - T C 2 25 SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 3

4 Typical Characteristics IS, REVERSE DRAIN CURRENT (A).. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. 2 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(on) = V SINGLE PULSE T J = MAX RATED T C = 25 o C us us ms ms ms Forward Bias Safe Operating Area Figure 6. T J = 25 o C T J = 5 o C T J = -55 o C PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V DS = 2V T J = 25 o C T J = 5 o C T J = -55 o C , GATE TO SOURCE VOLTAGE (V) μs PULSE WIDTH TJ = 25 o C 5V Top V 8V 7V 6V 5.5V 5V Bottom Transfer Characteristics V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Forward Diode Characteristics Figure V DS, DRAIN TO SOURCE VOLTAGE (V) 5V Saturation Characteristics μs PULSE WIDTH TJ = 5 o C 5V Top V 8V 7V 6V 5.5V 5V Bottom V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. 5V rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) Saturation Characteristics Figure. ID = A PULSE DURATION = 8μs DUTY CYCLE =.5% MAX T J = 5 o C T J = 25 o C , GATE TO SOURCE VOLTAGE (V) R DSON vs. Gate Voltage 4

5 Typical Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE T J, JUNCTION TEMPERATURE( o C) Figure PULSE DURATION = 8μs DUTY CYCLE =.5% MAX I D = ma I D = A = V Normalized R DSON vs. Junction Temperature T J, JUNCTION TEMPERATURE ( o C) NORMALIZED GATE THRESHOLD VOLTAGE = V DS I D = 25μA T J, JUNCTION TEMPERATURE( o C) Figure 2. Normalized Gate Threshold Voltage vs. Temperature CAPACITANCE (pf) f = MHz = V C iss C oss C rss. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 3. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Figure Capacitance vs. Drain to Source Voltage Figure 6. VGS, GATE TO SOURCE VOLTAGE(V) ID = A V DS = 325V V DS = 26V V DS = 39V Q g, GATE CHARGE(nC) E OSS, [μj] V DS, Drain to Source Voltage [V] Figure 5. Gate Charge vs. Gate to Source Voltage Figure 6. Eoss vs. Drain to Source Voltage 5

6 I G = const. R G Figure 7. Gate Charge Test Circuit & Waveform R L V V DS DS 9% V DD V DUT % t d(on) t r t d(off) tf t on t off Figure 8. Resistive Switching Test Circuit & Waveforms Figure 9. Unclamped Inductive Switching Test Circuit & Waveforms 6

7 ( Driver ) R G DUT + I SD V DS _ L Driver Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period Gate Pulse Width D = Gate Pulse Period V DD V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 2. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7

8 Mechanical Dimensions Figure 2. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor represen-tative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. 8

9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

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