Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakd

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1 FQD3P50 P-Channel QFET MOSFET V, -.1 A, 4.9 Ω Description This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features -.1 A, V, R DS(on) = 4.9 Ω = - 10 V, ID = A Low Gate Charge (Typ. 18 nc) Low Crss (Typ. 9.5 pf) 100% Avalanche Tested Absolute Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter FQD3P50 Unit S Drain-Source Voltage -500 V I D Drain Current - Continuous (T C = 5 C) -.1 A Thermal Characteristics - Continuous (T C = 100 C) A I DM Drain Current - Pulsed (Note 1) -8.4 A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note ) 50 mj I AR Avalanche Current (Note 1) -.1 A E AR Repetitive Avalanche Energy (Note 1) 5.0 mj dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns P D Power Dissipation (T A = 5 C) *.5 W Power Dissipation (T C = 5 C) 50 W - Derate above 5 C 0.4 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L G D-PAK (TO5) Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Symbol Parameter FQD3P50 Unit R θjc Thermal Resistance, Junction-to-Case, Max..5 C/W R θja Thermal Resistance, Junction-to-Ambient, Max. * 50 C/W R θja Thermal Resistance, Junction-to-Ambient, Max. 110 C/W * When mounted on the minimum pad size recommended (PCB Mount) S D G! S!! D 009Semiconductor Components Industries, LLC. October-017,Rev. Publication Order Number: FQD3P50/D

2 Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = -50 µa V BS Breakdown Voltage Temperature / T J Coefficient I D = -50 µa, Referenced to 5 C V/ C I DSS = -500 V, = 0 V µa Zero Gate Voltage Drain Current = -400 V, T C = 15 C µa I GSSF Gate-Body Leakage Current, Forward = -30 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = 30 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, I D = -50 µa V R DS(on) Static Drain-Source V On-Resistance GS = -10 V, I D = A Ω g FS Forward Transconductance = -50 V, I D = A S Dynamic Characteristics C iss Input Capacitance = -5 V, = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns = -50 V, I D = -.7 A, t r Turn-On Rise Time R G = 5 Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4) ns Q g Total Gate Charge = -400 V, I D = -.7 A, nc Q gs Gate-Source Charge = -10 V nc Q gd Gate-Drain Charge (Note 4) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = -.1 A V t rr Reverse Recovery Time = 0 V, I S = -.7 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. L = 10mH, I AS = -.1A, = -50V, R G = 5 Ω, Starting T J = 5 C 3. I SD -.7A, di/dt 00A/µs, BS, Starting T J = 5 C 4. Essentially independent of operating temperature

3 Typical Characteristics Top : V V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V , Drain-Source Voltage [V] 1. 50μs Pulse Test. T C = 5 Figure 1. On-Region Characteristics = -50V. 50μs Pulse Test , Gate-Source Voltage [V] Figure. Transfer Characteristics R DS(on) [Ω], Drain-Source On-Resistance = - 0V = - 10V Note : T J = I D, Drain Current [A] -I DR, Reverse Drain Current [A] = 0V. 50μs Pulse Test V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1 10 = -100V Capacitance [pf] C iss C oss C rss 1. = 0 V. f = 1 MHz -, Gate-Source Voltage [V] = -50V = -400V Note : I D = -.7 A , Drain-Source Voltage [V] Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3

4 Typical Characteristics (Continued) -BS, (Normalized) Drain-Source Breakdown Voltage T J, Junction Temperature [ o C] 1. = 0 V. I D = -50 μa Figure 7. Breakdown Voltage Variation vs. Temperature R DS(ON), (Normalized) Drain-Source On-Resistance T J, Junction Temperature [ o C] 1. = -10 V. I D = A Figure 8. On-Resistance Variation vs. Temperature Operation in This Area is Limited by R DS(on) 1. T C = 5 o C. T J = 150 o C 3. Single Pulse , Drain-Source Voltage [V] DC 10 ms 1 ms 100 µs T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Thermal Response D= N otes : Z θ JC (t) =.5 /W M ax.. D uty F actor, D =t 1 /t T JM - T C = P DM * Z θ JC (t) single pulse P DM t 1 t t 1, S quare W ave P ulse D uration [sec] Figure 11. Transient Thermal Response Curve 4

5 1V 00nF -3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT DUT -10V Q gs Q g Q gd Charge Resistive Switching Test Circuit & Waveforms R L t on t off t d(on) t r t d(off) tf R G 10% -10V DUT 90% Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI AS BS BS - I D t p Time R G I D (t) (t) -10V DUT I AS t p BS 5

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT _ I SD Driver R G Compliment of DUT (N-Channel) L dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I SD ( DUT ) ( DUT ) Body Diode Reverse Current V SD I RM di/dt I FM, Body Diode Forward Current Body Diode Forward Voltage Drop Body Diode Recovery dv/dt 6

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