FDS6986AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET
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1 FDS9AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description The FDS9AS is designed to replace two single SO- MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS9AS contai two unique V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch () is designed with specific emphasis on reducing switching losses while the lowside switch () is optimized to reduce conduction losses. also includes an integrated Schottky diode using ON Semiconductor s monolithic SyncFET technology. Features : Optimized to minimize conduction losses Includes SyncFET Schottky body diode 7.9A, V R DS(on) = 2 V GS = V R DS(on) = 2 V GS =.5V : Optimized for low switching losses Low gate charge ( nc typical).5a, V R DS(on) = 29 V GS = V R DS(on) = V GS =.5V FDS9AS SO- D2/S D2/S D D D D D D Pin SO- G2 S2 G S/D2 G S S S Absolute Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Units V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ±2 ± V I D Drain Current - Continuous (Note a) A - Pulsed 2 P D Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note a). (Note b) (Note c).9 T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 7 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9AS FDS9AS 2mm 25 units FDS9AS FDS9AS- NL ( Note ) 2mm 25 units 25 Semiconductor Components Industries, LLC. September-27, Rev. Publication Order Number: FDS9AS/D
2 Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditio Type Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = V, I D = ma V GS = V, I D = 25 ua BVDSS Breakdown Voltage I D = ma, Referenced to 25 C T J Temperature Coefficient I D = 25 µa, Referenced to 25 C I DSS Zero Gate Voltage Drain V DS = 2 V, V GS = V Current I GSS Gate-Body Leakage V GS = ±2 V, V DS = V V GS = ± V, V DS = V 2 5 V mv/ C µa ± na FDS9AS On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = ma VGS(th) T J R DS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance V DS = V GS, I D = 25 µa I D = ma, Referenced to 25 C I D = 25 ua, Referenced to 25 C V GS = V, I D = 7.9 A V GS = V, I D = 7.9 A, T J = 25 C V GS =.5 V, I D = 7 A V GS = V, I D =.5 A V GS = V, I D =.5 A, T J = 25 C V GS =.5 V, I D = 5. A I D(on) On-State Drain Current V GS = V, V DS = 5 V g FS Forward Traconductance V DS = 5 V, I D = 7.9 A V DS = 5 V, I D =.5 A Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, C oss Output Capacitance f =. MHz C rss Reverse Trafer Capacitance R G Gate Resistance V GS = 5mV, f =. MHz V mv/ C mω A S pf pf pf Ω Switching Characteristics (Note 2) t d(on) Turn-On Delay Time t r Turn-On Rise Time V DD = 5 V, I D = A, t d(off) Turn-Off Delay Time V GS = V, R GEN = Ω t f Turn-Off Fall Time t d(on) Turn-On Delay Time t r Turn-On Rise Time V DD = 5 V, I D = A, t d(off) Turn-Off Delay Time V GS =.5V, R GEN = Ω t f Turn-Off Fall Time
3 Electrical Characteristics (continued) T A = 25 C unless otherwise noted Symbol Parameter Test Conditio Type Min Typ Max Units Switching Characteristics (Note 2) Q g(tot) Total Gate Charge, Vgs = V : Q g Total Gate Charge, Vgs = 5V V DS = 5 V, I D = 7.9 A Q gs Gate-Source Charge : V DS = 5 V, I D =.5 A Q gd Gate-Drain Charge Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current. A. T rr Reverse Recovery Time I F = A, 5 Q rr Reverse Recovery Charge d if /d t = A/µs (Note ) nc T rr Reverse Recovery Time I F =.5 A, 2 Q rr Reverse Recovery Charge d if /d t = A/µs (Note ) 2 nc V SD Drain-Source Diode Forward V GS = V, I S = 2. A (Note 2)..7 V Voltage V GS = V, I S =. A (Note 2)..2 Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pi. R θjc is guaranteed by design while R θca is determined by the user's board design nc nc nc nc a) 7 C/W when mounted on a.5in 2 pad of 2 oz copper b) 25 C/W when mounted on a.2 in 2 pad of 2 oz copper c) 5 C/W when mounted on a minimum pad. Scale : on letter size paper 2. Pulse Test: Pulse Width < µs, Duty Cycle < 2.%. See SyncFET Schottky body diode characteristics below.. FDS9AS-NL is a lead free product. FDS9AS-NL marking will appear on the reel label.
4 Typical Characteristics: V GS = V.5V 2 V GS =.V FDS9AS V.5V.V 2.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V.V.5V 5.V.V V V DS, DRAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE...2. I D = 7.9A V GS = V R DS(ON), ON-RESISTANCE (OHM) T A = 25 o C T A = 25 o C I D =.95A T J, JUNCTION TEMPERATURE ( o C) Figure. On-Resistance Variation with Temperature..5 2 V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Gate-to-Source Voltage V DS = 5V T A = 25 o C 25 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) I S, REVERSE DRAIN CURRENT (A).... V GS = V T A = 25 o C 25 o C -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Trafer Characteristics. Figure. Body Diode Forward Voltage Variation with Source Current and Temperature.
5 Typical Characteristics: V GS, GATE-SOURCE VOLTAGE (V) I D = 7.9A V DS = V 5V 2 2V CAPACITANCE (pf) 2 C oss C iss f = MHz V GS = V FDS9AS C rss 9 2 Q g, GATE CHARGE (nc) 2 2 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics. 5. R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 5 o C/W T A = 25 o C ms ms ms s s DC µs P(pk), PEAK TRANSIENT POWER (W) 2 SINGLE PULSE R θja = 5 C/W T A = 25 C... V DS, DRAIN-SOURCE VOLTAGE (V)... t, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. 5
6 Typical Characteristics V GS = V.V 5.V.5V.V.5V.V 2.5V V DS, DRAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V V GS =.V.V.5V 5.V.V V Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. FDS9AS R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE...2. I D =.5A V GS = V R DS(ON), ON-RESISTANCE (OHM) T A = 25 o C T A = 25 o C I D =. A T J, JUNCTION TEMPERATURE ( o C) Figure. On-Resistance Variation with Temperature..5 2 V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Gate-to-Source Voltage. 2 2 V DS = 5V T A = -55 o C 25 o C 25 o C I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 25 o C 25 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Trafer Characteristics V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Body Diode Forward Voltage Variation with Source Current and Temperature.
7 Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) I D =.5A V DS = V 2V 5V 2 CAPACITANCE (pf) 2 C oss C iss f = MHz V GS = V FDS9AS Q g, GATE CHARGE (nc) C rss 2 2 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics. 5. R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 5 o C/W T A = 25 o C ms ms ms s s DC µs P(pk), PEAK TRANSIENT POWER (W) 2 SINGLE PULSE R θja = 5 C/W T A = 25 C... V DS, DRAIN-SOURCE VOLTAGE (V)... t, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 2. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = SINGLE PULSE..... t, TIME (sec) R θja (t) = r(t) * R θja R θja = 5 C/W P(pk) t t 2 T J - T A = P * R θja (t) Duty Cycle, D = t / t 2 Figure 2. Traient Thermal Respoe Curve. Thermal characterization performed using the conditio described in Note c. Traient thermal respoe will change depending on the circuit board design. 7
8 Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics ON Semiconductor s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS9AS..A/DIV 2.5nS/DIV Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. I DSS, REVERSE LEAKAGE CURRENT (A) o C o C 25 o C V DS, REVERSE VOLTAGE (V) Figure 2. SyncFET body diode reverse leakage versus drain-source voltage and temperature. FDS9AS Figure 22. FDS9AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 2 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS9A)..A/DIV 2.5nS/DIV Figure 2. Non-SyncFET (FDS9A) body diode reverse recovery characteristic.
9 Typical Characteristics V DS L BV DSS FDS9AS R GE V GS V V GS tp vary t P to obtain required peak I AS DUT I AS.Ω + V DD - I AS t P V DS V DD Figure 25. Unclamped Inductive Load Test Circuit Drain Current Same type as t AV Figure 2. Unclamped Inductive Waveforms + - V µf 5kΩ µf + V GS DUT - V DD V Q G(TOT) V GS Q GS Q GD I g(ref Charge, (nc) Figure 27. Gate Charge Test Circuit Figure 2. Gate Charge Waveform V DS R L V DS t ON t d(on) t r 9% toff t d(off ) t f 9% V GS R GEN DUT V DD - V GS Pulse Width µs Duty Cycle.% + V V GS V % 5% % Pulse Width 9% 5% % Figure 29. Switching Time Test Circuit Figure. Switching Time Waveforms 9
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More informationDescription. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C
FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V,.8 A,.5 Ω Features.8 A, 600 V, R DS(on) =.5 Ω (Max.) @ = 10 V, = 1.4 A Low Gate Charge ( Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested RoHS compliant
More informationDescription. Symbol Parameter FCMT180N65S3 Unit V DSS Drain to Source Voltage 650 V. - Continuous (T C = 25 o C) 17 - Continuous (T C = 100 o C) 11
FCMT80N65S3 N-Channel SUPERFET III Easy-Drive MOSFET 650 V, 7 A, 80 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 52 mω Ultra Low Gate Charge (Typ. Q g = 33 nc) Low Effective Output Capacitance (Typ.
More informationDescription TO-3PN. Symbol Parameter FCA76N60N Unit V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V
FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mω Features R DS(on) = 28 mω (Typ. ) @ V GS = 0 V, I D = 38 A Ultra Low Gate Charge (Typ. Q g = 28 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
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More informationNDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NS3N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's
More informationFDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features
FDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features R DS(on) = 4.8 mω (Typ.) @ V GS = V, I D = 120 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely
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More informationSept 2017 FCA47N60F N-Channel SuperFET FRFET MOSFET. Description TO-3PN
FCA47N60F N-Channel SuperFET FRFET MOSFET 600 V, 47 A, 73 mω Features 650 V @ T J = 150 C Typ. R DS(on) = 62 mω Fast Recovery Time (Typ. T rr = 240 ns) Ultra Low Gate Charge (Typ. Q g = 210 nc) Low Effective
More informationFCH190N65F-F085 N-Channel SuperFET II FRFET MOSFET
FCH9N65F-F85 N-Channel SuperFET II FRFET MOSFET 65 V, 2.6 A, 9 mω Features Typical R DS(on) = 48 mω at = V, I D = A Typical Q g(tot) = 63 nc at = V, I D = A UIS Capability Qualified to AEC Q RoHS Compliant
More informationFDH50N50 / FDA50N50 N-Channel UniFET TM MOSFET 500 V, 48 A, 105 mω Features
FDH5N5 / FDA5N5 N-Channel UniFET TM MOSFET 5 V, 48 A, 15 mω Features R DS(on) = 89 mω (Typ.) @ = 1 V, = 24 A Low Gate Charge (Typ. 15 nc) Low C rss (Typ. 45 pf) 1% Avalanche Tested Improved dv/dt Capability
More informationN-Channel SuperFET II FRFET MOSFET
FCH077N65F N-Channel SuperFET II FRFET MOSFET 650 V, 54 A, 77 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 68 mω Ultra Low Gate Charge (Typ. Q g = 26 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationGeneral Description. Applications. Power management Load switch Q2 3 5 Q1
FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
More informationFCH023N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 65 V, 75 A, 23 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
More informationNCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
More informationNTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
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More information50A, 600V Hyperfast Rectifier
RHRG56F85 5A, 6V Hyperfast Rectifier Features High Speed Switching ( t rr =45(Typ.) @ I F =5A ) Low Forward Voltage( V F =.67V(Typ.) @ I F =5A ) Avalanche Energy Rated AECQ Qualified Applicatio Switching
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Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationNTP082N65S3F. Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m
Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
More informationNTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
More informationFCMT099N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 30 A, 99 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 30 A, 99 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationFCD360N65S3R0. N Channel SUPERFET III Easy-Drive MOSFET. 650 V, 10 A, 360 m
N Channel SUPERFET III Easy-Drive MOSFET 650 V, 0 A, 360 m Description SuperFET III MOSFET is ON Semiconductor s brand new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance
More informationFGH12040WD 1200 V, 40 A Field Stop Trench IGBT
FGH12040WD 1200 V, 40 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J = 175 o C Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: V CE(sat) = 2.3
More informationNTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
More informationPackage Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V36P ISL9V36P3-F8 TO-22AB Tube N/A Electrical Cha
ISL9V36P3-F8 EcoSPARK mj, 36V, N-Channel Ignition IGBT General Description The ISL9V36P3_F8 is the next generation IGBT that offer outstanding SCIS capability in the TO-22 plastic package. This device
More informationNTHL040N65S3F. Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 65 A, 40 m
Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 65 A, 40 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
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More informationNTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
More informationFGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationNVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
More informationFCPF165N65S3L1. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 19 A, 165 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 9 A, 65 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
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More informationN-Channel 100-V (D-S) MOSFET
AM744NA N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) 5 @ V GS = V 7 @ V GS = 4.5V ID (A) 5 4 Typical
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RURD66S9AF85 Ultrafast Power Rectifier, 6A 6V Features High Speed Switching ( t rr =63ns(Typ.) @ =6A ) Low Forward Voltage( V F =.26V(Typ.) @ =6A ) Avalanche Energy Rated AECQ Qualified Applications General
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NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
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More informationNTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
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Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
More informationNTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
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AMN7P N-Channel 7-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed PRODUCT SUMMARY r DS(on) (Ω) ID (A) 7 @ V GS = V a VDS (V) Typical Applications:
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Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
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More informationFDPC5030SG. POWERTRENCH Power Clip 30 V Asymmetric Dual N Channel MOSFET
POWERTRENCH Power Clip V Asymmetric Dual N Channel MOSFET General Description This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to
More informationN-Channel 20-V (D-S) MOSFET
N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) @ V GS =.5V @ V GS =.5V ID(A) 7..5 Typical Applications:
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NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
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NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
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