Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V36P ISL9V36P3-F8 TO-22AB Tube N/A Electrical Cha
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1 ISL9V36P3-F8 EcoSPARK mj, 36V, N-Channel Ignition IGBT General Description The ISL9V36P3_F8 is the next generation IGBT that offer outstanding SCIS capability in the TO-22 plastic package. This device is intended for use in automotive ignition circuit, specifically as coil driver. Internal diode provide voltage clamping without the need for external component. EcoSPARK devices can be custom made to specific clamp voltages. Contact your nearest ON Semiconductor sales office for more information. Formerly Developmental Type Package COLLECTOR (FLANGE) JEDEC TO-22AB E C G Applications Device Maximum Ratings T A = 2 C unless otherwise noted Automotive Ignition Coil Driver Circuits Coil-On Plug Applications Features Industry Standard TO-22 package SCIS Energy = mj at T J = 2 o C Logic Level Gate Drive Qualified to AEC Q11 RoHS Compliant Symbol Symbol Parameter Ratings Units BR Collector to Emitter Breakdown Voltage (I C = 1 ma) 39 V BV ECS Emitter to Collector Voltage - Reverse Battery Condition (I C = 1 ma) 24 V E SCIS2 At Starting, I SCIS = 38.A, L = 67 µhy mj E SCIS1 At Starting T J = 1 C, I SCIS = 3A, L = 67 µhy 3 mj I C2 Collector Current Continuous, At T C = 2 C, See Fig 9 46 A I C11 Collector Current Continuous, At T C = 11 C, See Fig 9 31 A V GEM Gate to Emitter Voltage Continuous ±1 V P D Power Dissipation Total T C = 2 C 2 W Power Dissipation Derating T C > 2 C 1.67 W/ C T J Operating Junction Range -4 to 17 C T STG Storage Junction Range -4 to 17 C T L Max Lead Temp for Soldering (Leads at 1.6mm from Case for 1s) 3 C T pkg Max Lead Temp for Soldering (Package Body for 1s) 26 C ESD Electrostatic Discharge Voltage at 1pF, 1Ω 4 kv GATE R 1 R 2 COLLECTOR EMITTER ISL9V36P3-F8 EcoSPARK mj,36,n-channel Ignition IGBT 211 Semiconductor Components Industries, LLC. August-217,Rev. 3 Publication Order Number: ISL9V36P3-F8/D
2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V36P ISL9V36P3-F8 TO-22AB Tube N/A Electrical Characteristics T A = 2 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BR Collector to Emitter Breakdown Voltage I C = 2mA, V GE =, R G = 1KΩ, See Fig. 1 T J = -4 to 1 C BS Collector to Emitter Breakdown Voltage I C = 1mA, V GE =, R G =, See Fig. 1 T J = -4 to 1 C BV ECS Emitter to Collector Breakdown Voltage I C = -7mA, V GE = V, T C = 2 C On State Characteristics Dynamic Characteristics V V V BV GES Gate to Emitter Breakdown Voltage I GES = ± 2mA ±12 ±14 - V I CER Collector to Emitter Leakage Current R = 2V, R G = 1KΩ, See Fig. 11 I ECS Emitter to Collector Leakage Current V EC = 24V, See Fig. 11 T C = 2 C µa T C = 1 C ma T C = 2 C ma T C = 1 C ma R 1 Series Gate Resistance Ω R 2 Gate to Emitter Resistance 1K - 3K Ω (SAT) Collector to Emitter Saturation Voltage I C = 1A, V GE = 4.V (SAT) Collector to Emitter Saturation Voltage I C = 1A, T C = 2 C, See Fig. 4 Q G(ON) Gate Charge I C = 1A, = 12V, V GE = V, See Fig. 14 V GE(TH) Gate to Emitter Threshold Voltage I C = 1.mA, = V GE, See Fig V T C = 1 C V nc T C = 2 C V T C = 1 C V V GEP Gate to Emitter Plateau Voltage I C = 1A, = 12V V ISL9V36P3-F8 EcoSPARK mj,36,n-channel Ignition IGBT Switching Characteristics t d(on)r Current Turn-On Delay Time-Resistive = 14V, R L = 1Ω, µs t rr Current Rise Time-Resistive V GE = V, R G = 1KΩ µs, See Fig. 12 t d(off)l Current Turn-Off Delay Time-Inductive = 3V, L = 2mH, µs t fl Current Fall Time-Inductive V GE = V, R G = 1KΩ µs, See Fig. 12 SCIS Self Clamped Inductive Switching, L = 67 µh, R G = 1KΩ, V GE = V, See Fig. 1 & 2 Thermal Characteristics - - mj R θjc Thermal Resistance Junction-Case C/W 2
3 Typical Characteristics I SCIS, INDUCTIVE SWITCHING CURRENT (A) T J = 1 C R G = 1KΩ, V GE = V,V dd = 14V SCIS Curves valid for V clamp Voltages of <39V t CLP, TIME IN CLAMP (µs) Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp Figure 3. Collector to Emitter On-State Voltage vs Junction Figure. Collector Current vs Collector to Emitter On-State Voltage V GE = 8.V V GE =.V V GE = 4.V V GE =.V V GE = 8.V I CE = 6A V GE = 4.V T J = - 4 C I SCIS, INDUCTIVE SWITCHING CURRENT (A) T J = 1 C R G = 1KΩ, V GE = V,V dd = 14V SCIS Curves valid for V clamp Voltages of <39V L, INDUCTANCE (mhy) Figure 2. Self Clamped Inductive Switching Current vs Inductance V GE =.V V GE = 8.V V GE = 4.V I CE = 1A Figure 4.Collector to Emitter On-State Voltage vs Junction V GE = 8.V V GE =.V V GE = 4.V Figure 6. Collector Current vs Collector to Emitter On-State Voltage ISL9V36P3-F8 EcoSPARK mj,36,n-channel Ignition IGBT 3
4 Typical Characteristics (Continued) V GE = 8.V V GE =.V V GE = 4.V T J = 17 C Figure 7. Collector to Emitter On-State Voltage vs Collector Current I CE, DC COLLECTOR CURRENT (A) T C, CASE TEMPERATURE ( C) V GE = 4.V Figure 9. DC Collector Current vs Case 1 V ECS = 24V V TH, THRESHOLD VOLTAGE (V) DUTY CYCLE <.%, = V PULSE DURATION = 2µs T J = 17 C T J = -4 C V GE, GATE TO EMITTER VOLTAGE (V) Figure 8. Transfer Characteristics = V GE I CE = 1mA 1 Figure 1. Threshold Voltage vs Junction 2 18 I CE = 6.A, V GE = V, R G = 1KΩ Resistive t OFF 17 ISL9V36P3-F8 EcoSPARK mj,36,n-channel Ignition IGBT LEAKAGE CURRENT (µa) S = 3V S = 2V SWITCHING TIME (µs) Inductive t OFF Resistive t ON Figure 11. Leakage Current vs Junction Figure 12. Switching Time vs Junction 4
5 Typical Characteristics (Continued) C, CAPACITANCE (pf) C IES C RES FREQUENCY = 1 MHz C OES Figure 13. Capacitance vs Collector to Emitter Voltage BR, BREAKDOWN VOLTAGE (V) Z thjc, NORMALIZED THERMAL RESPONSE I CER = 1mA Q G, GATE CHARGE (nc) Figure 14. Gate Charge Figure 1. Breakdown Voltage vs Series Gate Resistance V GE, GATE TO EMITTER VOLTAGE (V) T J = 17 C I G(REF) = 1mA, R L =.6Ω, = 12V R G, SERIES GATE RESISTANCE (Ω) = 6V T J = - 4 C SINGLE PULSE P D t 1 DUTY FACTOR, D = t 1 / t 2 PEAK T J = (P D X Z θjc X R θjc ) + T C t 2 ISL9V36P3-F8 EcoSPARK mj,36,n-channel Ignition IGBT T 1, RECTANGULAR PULSE DURATION (s) Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
6 Test Circuits and Waveforms PULSE GEN Figure 17. Inductive Switching Test Circuit VARY t P TO OBTAIN REQUIRED PEAK I AS V V GS t P R G G R G DUT Figure 19. Energy Test Circuit C E L I AS L DUT.1Ω + V DD - V R G = 1KΩ G DUT Figure 18. t ON and t OFF Switching Test Circuit I AS t P Figure 2. Energy Waveforms C R or L BS t AV E LOAD + - V DD ISL9V36P3-F8 EcoSPARK mj,36,n-channel Ignition IGBT 6
7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 1921 E. 32nd Pkwy, Aurora, Colorado 811 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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