FGH75T65SQDNL4. 75 A, 650 V V CEsat = 1.50 V E on = 1.25 mj
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1 IGBT - Field Stop IV/ Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO7L package that provides significant reduction in E on Losses compared to standard TO7L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology T Jmax = 7 C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO7L for Minimal E on Losses Optimized for High Speed Switching These are PbFree Devices Typical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Neutral Point Clamp Topology ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V CES V Collector TC = TC = C Diode Forward TC = TC = C Diode Pulsed Current T PULSE Limited by T J Max I C 7 I F 7 A A I FM A Pulsed collector current, T pulse I CM A limited by T Jmax Gateemitter voltage V GE V Transient gateemitter voltage V (T PULSE = s, D <.) Power TC = TC = C P D 7 Operating junction temperature range T J to +7 C Storage temperature range T stg to +7 C Lead temperature for soldering, / from case for seconds W T SLD C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 7 A, V V CEsat =. V E on =. mj TO7LD CASE CJ ORDERING INFORMATION Device Package Shipping FGH7TSQDNL G E C E E G A Y WW G C E MARKING DIAGRAM FGH7T SQDNL AYWWG = Assembly Location = Year = Work Week = PbFree Package TO7 (PbFree) Units / Rail Semiconductor Components Industries, LLC, 7 May, Rev. Publication Order Number: FGH7TSQDNL/D
2 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R JC. C/W Thermal resistance junctiontocase, for Diode R JC. C/W Thermal resistance junctiontoambient R JA C/W ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited V GE = V, I C = A V (BR)CES V Collectoremitter saturation voltage V GE = V, V GE = V,, T J = 7 C Gateemitter threshold voltage V GE = V CE, I C = A V GE(th)... V Collectoremitter cutoff current, gate V GE = V, V CE = V I CES. ma emitter shortcircuited V GE = V, V CE = V, T J = 7 C. Gate leakage current, collectoremitter shortcircuited V CEsat..7 V GE = V, V CE = V I GES ± na DYNAMIC CHARACTERISTIC Input capacitance C ies pf Output capacitance V CE = V, V GE = V, f = MHz C oes Reverse transfer capacitance C res Gate charge total Q g nc Gate to emitter charge V CE = V,, V GE = V Q ge 9 Gate to collector charge Q gc 9 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t d(on) ns Rise time t r 9 Turnoff delay time T J = C t d(off) Fall time V CC = V, R g = t f Turnon switching loss V GE = V E on. mj Turnoff switching loss E off. Total switching loss E ts. Turnon delay time t d(on) ns Rise time t r Turnoff delay time T J = 7 C t d(off) 7 Fall time V CC = V, R g = t f 7 Turnon switching loss V GE = V E on. mj Turnoff switching loss E off. Total switching loss E ts. DIODE CHARACTERISTIC Forward voltage V GE = V, I F = 7 A V GE = V, I F = 7 A, T J = 7 C Reverse recovery time T J = C t rr ns Reverse recovery charge I F = 7 A, V R = V Q rr.7 C Reverse recovery current di F /dt = A/ s I rrm A Reverse recovery time T J = 7 C t rr ns Reverse recovery charge I F = 7 A, V R = V Q rr. C Reverse recovery current di F /dt = A/ s I rrm. A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. V F..7.. V V
3 TYPICAL CHARACTERISTICS V GE = V 9 V 7 V V T J = C. V V. V T J = C V GE = V 9 V 7 V. V V. V Figure. Output Characteristics Figure. Output Characteristics V GE = V 9 V T J = C V GE = 7 V V 9 V 7 V V Figure. Output Characteristics 7. V V. V Figure. Output Characteristics T J = 7 C 7. V V. V V T J = 7 C T J = C I C = A I C = A 7 7 V GE, GATEEMITTER VOLTAGE (V) T J, JUNCTION TEMPERATURE ( C) Figure. Typical Transfer Characteristics Figure. V CE(sat) vs. T J
4 TYPICAL CHARACTERISTICS K T J = C 9 CAPACITANCE (pf) K K C ies C oes 7 9 I F, FORWARD CURRENT (A) C res 7 T J = 7 C T J = C V F, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure. Diode Forward Characteristics V GE, GATEEMITTER VOLTAGE (V) V CE = V V GE = V SWITCHING LOSS (mj) V CE = V V GE = V Rg = E off E on Q G, GATE CHARGE (nc) T J, JUNCTION TEMPERATURE ( C) Figure 9. Typical Gate Charge Figure. Switching Loss vs. Temperature SWITCHING TIME (ns) t d(off) t f V CE = V V GE = V Rg = t r t d(on) SWITCHING LOSS (mj) V CE = V V GE = V T J = 7 C Rg = 7 9 E off E on 7 T J, JUNCTION TEMPERATURE ( C) Figure. Switching Time vs. Temperature Figure. Switching Loss vs. IC
5 TYPICAL CHARACTERISTICS SWITCHING TIME (ns) td(off) t f V CE = V V GE = V T J = 7 C Rg = 7 9 t r t d(on) 7 SWITCHING LOSS (mj) V CE = V V GE = V T J = 7 C E on E off 7 R G, GATE RESISTOR ( ) Figure. Switching Time vs. IC Figure. Switching Loss vs. R G SWITCHING TIME (ns) t r t d(on) t d(off) t f V CE = V V GE = V T J = 7 C 7 SWITCHING LOSS (mj) V GE = V T J = 7 C Rg = E off E on R G, GATE RESISTOR ( ) Figure. Switching Time vs. R G Figure. Switching Loss vs. V CE SWITCHING TIME (ns) V GE = V T J = 7 C Rg = t d(off) t f t r t d(on). Single Nonrepetitive Pulse T C = C Curves must be derated linearly with increase in temperature K s s ms dc operation K Figure 7. Switching Time vs. V CE Figure. Safe Operating Area
6 TYPICAL CHARACTERISTICS V GE = V, T C = 7 C K t rr, REVERSE RECOVERY TIME (ns) 9 7 V R = V T J = 7 C, I F = 7 A T J = C, I F = 7 A 7 9 di F /dt, DIODE CURRENT SLOPE (A/ s) Figure 9. Reverse Bias Safe Operating Area Figure. t rr vs. di F /dt Q rr, REVERSE RECOVERY CHARGE ( C) V R = V T J = 7 C, I F = 7 A T J = C, I F = 7 A 7 9 I rm, REVERSE RECOVERY CURRENT (A) V R = V T J = 7 C, I F = 7 A T J = C, I F = 7 A 7 9 di F /dt, DIODE CURRENT SLOPE (A/ s) di F /dt, DIODE CURRENT SLOPE (A/ s) Figure. Q rr vs. di F /dt Figure. I rm vs. di F /dt. V F, FORWARD VOLTAGE (V) I F = 7 A I F = A I F = A T J, JUNCTION TEMPERATURE ( C) Figure. V F vs. T J
7 TYPICAL CHARACTERISTICS R(t), SQUAREWAVE PEAK ( C/W).... % Duty Cycle % % % % Single Pulse Junction R JC =. R R R n C C C n Case R i ( C/W) C i (J/W) Duty Factor = t /t Peak T J = P DM x Z JC + T C PULSE TIME (sec) Figure. IGBT Transient Thermal Impedance R(t), SQUAREWAVE PEAK ( C/W).. % Duty Cycle % % % % Single Pulse Junction Duty Factor = t /t Peak T J = P DM x Z JC + T C PULSE TIME (sec) R JC =. R R R n C C C n Case R i ( C/W) C i (J/W) Figure. Diode Transient Thermal Impedance Figure. Test Circuit for Switching Characteristics 7
8 Figure 7. Definition of Turn On Waveform
9 Figure. Definition of Turn Off Waveform 9
10 PACKAGE DIMENSIONS TO7LD CASE CJ ISSUE O ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 9 E. nd Pkwy, Aurora, Colorado USA Phone: 77 or Toll Free USA/Canada Fax: 77 or 7 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 9 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative FGH7TSQDNL/D
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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FCH04N65EF N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 4 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 36 mω Ultra Low Gate Charge (Typ. Q g = 229 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
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dvanced Power MOSFET FETURES IEEE802.3af Compatible! valanche Rugged Technology! Rugged Gate Oxide Technology! Lower Input Capacitance! Improved Gate Charge! Extended Safe Operating rea! Lower Leakage
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More informationDescription. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 500 V V GSS Gate to Source Voltage ±30 V
FDD5N50FTM-WS N-Channel UniFET TM FRFET MOSFET 500 V, 3.5 A,.55 Ω Features R DS(on) =.25Ω (Typ.) @ V GS = 0 V, I D =.75 A Low Gate Charge (Typ. nc) Low C rss (Typ. 5 pf) Fast Switching 00% Avalanche Tested
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Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 65 A, 40 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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