NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection

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1 Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to Drain Clamp Scalable to Lower or Higher R DS(on) Internal Series Gate Resistance These are Pb Free Devices V DSS (Clamped) R DS(ON) TYP I D MAX 52 V 95 V 2.6 A Drain (Pins 2, ) Benefits High Energy Capability for Inductive Loads Low Switching Noise Generation Gate (Pin ) Overvoltage Protection Applications Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable ESD Protection SOT 223 CASE 38E STYLE 3 = Gate 2 = Drain 3 = Source MARKING DIAGRAM DRAIN Source (Pin 3) AYW xxxxx 2 3 GATE DRAIN SOURCE A Y W xxxxx = Assembly Location = Year = Work Week = V8 or 8A = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 26 October, 28 Rev. 8 Publication Order Number: NCV8/D

2 MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage Internally Clamped V DSS V Gate to Source Voltage Continuous V GS ±5 V Drain Current T A = 25 C Single Pulse (t p = s) (Note ) I D I DM 2.6 Total Power T A = 25 C (Note ) P D.69 W Operating and Storage Temperature Range T J, T stg 55 to 5 C Single Pulse Drain to Source Avalanche Energy (V DD = 5 V, I D(pk) =.7 A, V GS = V, L = 6 mh, R G = 25 ) E AS mj Load Dump Voltage (V GS = and V, R I = 2., R L = 9., td = ms) V LD 6 V Thermal Resistance, Maximum Lead Temperature for Soldering Purposes, /8 from Case for Seconds Junction to Ambient (Note ) Junction to Ambient (Note 2) R JA 7 R JA 69 A C/W T L 26 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. When surface mounted to a FR board using pad size, (Cu area.27 in 2 ). 2. When surface mounted to a FR board using minimum recommended pad size, (Cu area.2 in 2 ). I D + DRAIN + I G GATE VDS VGS SOURCE Figure. Voltage and Current Convention 2

3 MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage (Note 3) (V GS = V, I D =. ma, T J = 25 C) (V GS = V, I D =. ma, T J = C to 25 C) (Note ) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (V DS = V, V GS = V) (V DS = V, V GS = V, T J = 25 C) (Note ) Gate Body Leakage Current (V GS = ±8 V, V DS = V) (V GS = ± V, V DS = V) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (V DS = V GS, I D = A) Threshold Temperature Coefficient (Negative) Static Drain to Source On Resistance (Note 3) (V GS = 3.5 V, I D =.6 A) (V GS =. V, I D =.5 A) (V GS = V, I D = 2.6 A) V (BR)DSS I DSS 25 I GSS ±35 GS(th)..5. R DS(on) ± V V mv/ C A A.9 V mv/ C Forward Transconductance (Note 3) (V DS = 5 V, I D = 2.6 A) g FS 3.8 Mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 55 pf Output Capacitance V DS = 35 V, V GS = V, f = khz C oss 6 Transfer Capacitance C rss 25 Input Capacitance C iss 7 pf Output Capacitance V DS = 25 V, V GS = V, f = khz C oss 7 Transfer Capacitance C rss 3 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 3 s, Duty Cycle 2%.. Not subject to production testing. 5. Switching characteristics are independent of operating junction temperatures. 8 6 m 3

4 MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) Characteristic Symbol SWITCHING CHARACTERISTICS (Note 5) Turn On Delay Time Rise Time V GS =.5 V, V DD = V, t r 525 Turn Off Delay Time I D = 2.6 A, R D = 5. t d(off) 53 Min Typ Max Unit t d(on) 375 ns Fall Time t f 6 Turn On Delay Time t d(on) 325 ns Rise Time V GS =.5 V, V DD = V, t r 275 Turn Off Delay Time I D =. A, R D = t d(off) 86 Fall Time t f 5 Turn On Delay Time t d(on) 9 ns Rise Time V GS = V, V DD = 5 V, t r 7 Turn Off Delay Time I D = 2.6 A, R D = 5.8 t d(off) 222 Fall Time t f 8 Gate Charge Gate Charge V GS =.5 V, V DS = V, I D = 2.6 A (Note 3) V GS =.5 V, V DS = 5 V, I D =.5 A (Note 3) SOURCE DRAIN DIODE CHARACTERISTICS Forward On Voltage I S = 2.6 A, V GS = V (Note 3) I S = 2.6 A, V GS = V, T J = 25 C Reverse Recovery Time I S =.5 A, V GS = V, di s /dt = A/ s (Note 3) Q T.5 nc Q.9 Q Q T 3.9 nc Q. Q 2.7 V SD V t rr 73 ns t a 2 t b 53 Reverse Recovery Stored Charge Q RR 6.3 C ESD CHARACTERISTICS (Note ) Electro Static Discharge Capability Human Body Model (HBM) ESD 5 V Machine Model (MM) 5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 3 s, Duty Cycle 2%.. Not subject to production testing. 5. Switching characteristics are independent of operating junction temperatures.

5 TYPICAL PERFORMANCE CURVES IL max, MAX SWITCH OFF CURRENT (A). 25 C 5 C C Figure. Single Pulse Maximum Switch off Current vs. Load Inductance L, LOAD INDUCTANCE (mh) E max, MAX SWITCHING ENERGY (mj). 25 C C 5 C Figure 2. Single Pulse Maximum Switching Energy vs. Load Inductance L, LOAD INDUCTANCE (mh) I D, DRAIN CURRENT (AMPS) V GS = V 5 V V T J = 25 C V 3.6 V 6 3. V 3.2 V 3 V V 2.6 V 2. V V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 3. On State Output Characteristics I D, DRAIN CURRENT (AMPS) V DS V T J = 25 C T J = 5 C T J = C V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. Transfer Characteristics R DS(on) (m ) 35 I D = 2 A 3 5 C C 5 C R DS(on) (m ) C, V GS = 5 V 2 5 C, V GS = V 5 25 C, V GS = 5 V 25 C, V GS = V C, V GS = 5 V C, V GS = V V GS, GATE TO SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A) Figure 5. R DS(on) vs. Gate Source Voltage Figure 6. R DS(on) vs. Drain Current 5

6 TYPICAL PERFORMANCE CURVES NORMALIZED R DS(on) I D = 2 A V GS = 5 V V GS = V NORMALIZED V GS(th) (V) I D = A, V DS = V GS T J, JUNCTION TEMPERATURE ( C) Figure 7. Normalized R DS(on) vs. Temperature T J, JUNCTION TEMPERATURE ( C) Figure 8. Normalized Threshold Voltage vs. Temperature I DSS ( A)... V GS = V 5 C C 25 C I S, SOURCE CURRENT (A) C.6 25 C.7.8 C.9 V DS, DRAIN TO SOURCE VOLTAGE (V) V SD, SOURCE TO DRAIN VOLTAGE (V) Figure 9. Drain to Source Leakage Current Figure. Source Drain Diode Forward Characteristics C, CAPACITANCE (pf) C iss V DS = V C rss V GS = V T J = 25 C C iss C oss I D = 2.6 A C rss T J = 25 C V GS V DS Q G, TOTAL GATE CHARGE (nc) GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS) Figure. Capacitance Variation V GS, GATE TO SOURCE VOLTAGE (VOLTS) V DS Q GS Q T Q GD V GS Figure 2. Gate to Source Voltage vs. Total Gate Charge V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) 6

7 TYPICAL PERFORMANCE CURVES 3 25 V DD = V V DD = 5 V t d(off), V DD = V V DD = 5 V t d(off) TIME (ns) 2 5 I D = 2.6 A R G = t f TIME (ns) t f t r 5 t r t d(on) t d(on) V GS (V) Figure 3. Resistive Load Switching Time vs. Gate Source Voltage 8 9 R G ( ), Figure. Resistive Load Switching Time vs. Gate Resistance (V GS = 5 V, I D = 2.6 A), V DD = V V DD = 5 V t d(off) TIME (ns) t f t r R JA ( C/W) PCB Cu thickness,. oz t d(on) R G ( ) Figure 5. Resistive Load Switching Time vs. Gate Resistance (V GS = V, I D = 2.6 A), 6 PCB Cu thickness, 2. oz COPPER HEAT SPREADER AREA (mm 2 ) Figure 6. R JA vs. Copper Area R JA 788 mm 2 C /W 5% Duty Cycle 2% % 5% 2% %.. Single Pulse..... PULSE TIME (sec) Figure 7. Transient Thermal Resistance 7

8 ORDERING INFORMATION NCV8STTG Device Package Shipping SOT 223 (Pb Free) / Tape & Reel NCV8ASTTG NCV8STT3G SOT 223 (Pb Free) SOT 223 (Pb Free) / Tape & Reel / Tape & Reel NCV8ASTT3G SOT 223 (Pb Free) / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 8

9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SCALE : SOT 223 (TO 26) CASE 38E ISSUE R DATE 2 OCT 28 DOCUMENT NUMBER: DESCRIPTION: 98ASB268B SOT 223 (TO 26) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. PAGE OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Semiconductor Components Industries, LLC, 28

10 SOT 223 (TO 26) CASE 38E ISSUE R DATE 2 OCT 28 STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER. COLLECTOR STYLE 2: PIN. ANODE 2. CATHODE 3. NC. CATHODE STYLE 3: PIN. GATE 2. DRAIN 3. SOURCE. DRAIN STYLE : PIN. SOURCE 2. DRAIN 3. GATE. DRAIN STYLE 5: PIN. DRAIN 2. GATE 3. SOURCE. GATE STYLE 6: PIN. RETURN 2. INPUT 3. OUTPUT. INPUT STYLE 7: PIN. ANODE 2. CATHODE 3. ANODE 2. CATHODE STYLE 8: CANCELLED STYLE 9: PIN. INPUT 2. GROUND 3. LOGIC. GROUND STYLE : PIN. CATHODE 2. ANODE 3. GATE. ANODE STYLE : PIN. MT 2. MT 2 3. GATE. MT 2 STYLE 2: PIN. INPUT 2. OUTPUT 3. NC. OUTPUT STYLE 3: PIN. GATE 2. COLLECTOR 3. EMITTER. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXX A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code = Pb Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb Free indicator, G or microdot, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB268B SOT 223 (TO 26) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Semiconductor Components Industries, LLC, 28

11 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

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