NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
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1 Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to Drain Clamp Scalable to Lower or Higher R DS(on) Internal Series Gate Resistance These are Pb Free Devices V DSS (Clamped) R DS(ON) TYP I D MAX 52 V 95 V 2.6 A Drain (Pins 2, ) Benefits High Energy Capability for Inductive Loads Low Switching Noise Generation Gate (Pin ) Overvoltage Protection Applications Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable ESD Protection SOT 223 CASE 38E STYLE 3 = Gate 2 = Drain 3 = Source MARKING DIAGRAM DRAIN Source (Pin 3) AYW xxxxx 2 3 GATE DRAIN SOURCE A Y W xxxxx = Assembly Location = Year = Work Week = V8 or 8A = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 26 October, 28 Rev. 8 Publication Order Number: NCV8/D
2 MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage Internally Clamped V DSS V Gate to Source Voltage Continuous V GS ±5 V Drain Current T A = 25 C Single Pulse (t p = s) (Note ) I D I DM 2.6 Total Power T A = 25 C (Note ) P D.69 W Operating and Storage Temperature Range T J, T stg 55 to 5 C Single Pulse Drain to Source Avalanche Energy (V DD = 5 V, I D(pk) =.7 A, V GS = V, L = 6 mh, R G = 25 ) E AS mj Load Dump Voltage (V GS = and V, R I = 2., R L = 9., td = ms) V LD 6 V Thermal Resistance, Maximum Lead Temperature for Soldering Purposes, /8 from Case for Seconds Junction to Ambient (Note ) Junction to Ambient (Note 2) R JA 7 R JA 69 A C/W T L 26 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. When surface mounted to a FR board using pad size, (Cu area.27 in 2 ). 2. When surface mounted to a FR board using minimum recommended pad size, (Cu area.2 in 2 ). I D + DRAIN + I G GATE VDS VGS SOURCE Figure. Voltage and Current Convention 2
3 MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage (Note 3) (V GS = V, I D =. ma, T J = 25 C) (V GS = V, I D =. ma, T J = C to 25 C) (Note ) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (V DS = V, V GS = V) (V DS = V, V GS = V, T J = 25 C) (Note ) Gate Body Leakage Current (V GS = ±8 V, V DS = V) (V GS = ± V, V DS = V) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (V DS = V GS, I D = A) Threshold Temperature Coefficient (Negative) Static Drain to Source On Resistance (Note 3) (V GS = 3.5 V, I D =.6 A) (V GS =. V, I D =.5 A) (V GS = V, I D = 2.6 A) V (BR)DSS I DSS 25 I GSS ±35 GS(th)..5. R DS(on) ± V V mv/ C A A.9 V mv/ C Forward Transconductance (Note 3) (V DS = 5 V, I D = 2.6 A) g FS 3.8 Mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 55 pf Output Capacitance V DS = 35 V, V GS = V, f = khz C oss 6 Transfer Capacitance C rss 25 Input Capacitance C iss 7 pf Output Capacitance V DS = 25 V, V GS = V, f = khz C oss 7 Transfer Capacitance C rss 3 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 3 s, Duty Cycle 2%.. Not subject to production testing. 5. Switching characteristics are independent of operating junction temperatures. 8 6 m 3
4 MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) Characteristic Symbol SWITCHING CHARACTERISTICS (Note 5) Turn On Delay Time Rise Time V GS =.5 V, V DD = V, t r 525 Turn Off Delay Time I D = 2.6 A, R D = 5. t d(off) 53 Min Typ Max Unit t d(on) 375 ns Fall Time t f 6 Turn On Delay Time t d(on) 325 ns Rise Time V GS =.5 V, V DD = V, t r 275 Turn Off Delay Time I D =. A, R D = t d(off) 86 Fall Time t f 5 Turn On Delay Time t d(on) 9 ns Rise Time V GS = V, V DD = 5 V, t r 7 Turn Off Delay Time I D = 2.6 A, R D = 5.8 t d(off) 222 Fall Time t f 8 Gate Charge Gate Charge V GS =.5 V, V DS = V, I D = 2.6 A (Note 3) V GS =.5 V, V DS = 5 V, I D =.5 A (Note 3) SOURCE DRAIN DIODE CHARACTERISTICS Forward On Voltage I S = 2.6 A, V GS = V (Note 3) I S = 2.6 A, V GS = V, T J = 25 C Reverse Recovery Time I S =.5 A, V GS = V, di s /dt = A/ s (Note 3) Q T.5 nc Q.9 Q Q T 3.9 nc Q. Q 2.7 V SD V t rr 73 ns t a 2 t b 53 Reverse Recovery Stored Charge Q RR 6.3 C ESD CHARACTERISTICS (Note ) Electro Static Discharge Capability Human Body Model (HBM) ESD 5 V Machine Model (MM) 5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 3 s, Duty Cycle 2%.. Not subject to production testing. 5. Switching characteristics are independent of operating junction temperatures.
5 TYPICAL PERFORMANCE CURVES IL max, MAX SWITCH OFF CURRENT (A). 25 C 5 C C Figure. Single Pulse Maximum Switch off Current vs. Load Inductance L, LOAD INDUCTANCE (mh) E max, MAX SWITCHING ENERGY (mj). 25 C C 5 C Figure 2. Single Pulse Maximum Switching Energy vs. Load Inductance L, LOAD INDUCTANCE (mh) I D, DRAIN CURRENT (AMPS) V GS = V 5 V V T J = 25 C V 3.6 V 6 3. V 3.2 V 3 V V 2.6 V 2. V V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 3. On State Output Characteristics I D, DRAIN CURRENT (AMPS) V DS V T J = 25 C T J = 5 C T J = C V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. Transfer Characteristics R DS(on) (m ) 35 I D = 2 A 3 5 C C 5 C R DS(on) (m ) C, V GS = 5 V 2 5 C, V GS = V 5 25 C, V GS = 5 V 25 C, V GS = V C, V GS = 5 V C, V GS = V V GS, GATE TO SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A) Figure 5. R DS(on) vs. Gate Source Voltage Figure 6. R DS(on) vs. Drain Current 5
6 TYPICAL PERFORMANCE CURVES NORMALIZED R DS(on) I D = 2 A V GS = 5 V V GS = V NORMALIZED V GS(th) (V) I D = A, V DS = V GS T J, JUNCTION TEMPERATURE ( C) Figure 7. Normalized R DS(on) vs. Temperature T J, JUNCTION TEMPERATURE ( C) Figure 8. Normalized Threshold Voltage vs. Temperature I DSS ( A)... V GS = V 5 C C 25 C I S, SOURCE CURRENT (A) C.6 25 C.7.8 C.9 V DS, DRAIN TO SOURCE VOLTAGE (V) V SD, SOURCE TO DRAIN VOLTAGE (V) Figure 9. Drain to Source Leakage Current Figure. Source Drain Diode Forward Characteristics C, CAPACITANCE (pf) C iss V DS = V C rss V GS = V T J = 25 C C iss C oss I D = 2.6 A C rss T J = 25 C V GS V DS Q G, TOTAL GATE CHARGE (nc) GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS) Figure. Capacitance Variation V GS, GATE TO SOURCE VOLTAGE (VOLTS) V DS Q GS Q T Q GD V GS Figure 2. Gate to Source Voltage vs. Total Gate Charge V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) 6
7 TYPICAL PERFORMANCE CURVES 3 25 V DD = V V DD = 5 V t d(off), V DD = V V DD = 5 V t d(off) TIME (ns) 2 5 I D = 2.6 A R G = t f TIME (ns) t f t r 5 t r t d(on) t d(on) V GS (V) Figure 3. Resistive Load Switching Time vs. Gate Source Voltage 8 9 R G ( ), Figure. Resistive Load Switching Time vs. Gate Resistance (V GS = 5 V, I D = 2.6 A), V DD = V V DD = 5 V t d(off) TIME (ns) t f t r R JA ( C/W) PCB Cu thickness,. oz t d(on) R G ( ) Figure 5. Resistive Load Switching Time vs. Gate Resistance (V GS = V, I D = 2.6 A), 6 PCB Cu thickness, 2. oz COPPER HEAT SPREADER AREA (mm 2 ) Figure 6. R JA vs. Copper Area R JA 788 mm 2 C /W 5% Duty Cycle 2% % 5% 2% %.. Single Pulse..... PULSE TIME (sec) Figure 7. Transient Thermal Resistance 7
8 ORDERING INFORMATION NCV8STTG Device Package Shipping SOT 223 (Pb Free) / Tape & Reel NCV8ASTTG NCV8STT3G SOT 223 (Pb Free) SOT 223 (Pb Free) / Tape & Reel / Tape & Reel NCV8ASTT3G SOT 223 (Pb Free) / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 8
9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SCALE : SOT 223 (TO 26) CASE 38E ISSUE R DATE 2 OCT 28 DOCUMENT NUMBER: DESCRIPTION: 98ASB268B SOT 223 (TO 26) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. PAGE OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Semiconductor Components Industries, LLC, 28
10 SOT 223 (TO 26) CASE 38E ISSUE R DATE 2 OCT 28 STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER. COLLECTOR STYLE 2: PIN. ANODE 2. CATHODE 3. NC. CATHODE STYLE 3: PIN. GATE 2. DRAIN 3. SOURCE. DRAIN STYLE : PIN. SOURCE 2. DRAIN 3. GATE. DRAIN STYLE 5: PIN. DRAIN 2. GATE 3. SOURCE. GATE STYLE 6: PIN. RETURN 2. INPUT 3. OUTPUT. INPUT STYLE 7: PIN. ANODE 2. CATHODE 3. ANODE 2. CATHODE STYLE 8: CANCELLED STYLE 9: PIN. INPUT 2. GROUND 3. LOGIC. GROUND STYLE : PIN. CATHODE 2. ANODE 3. GATE. ANODE STYLE : PIN. MT 2. MT 2 3. GATE. MT 2 STYLE 2: PIN. INPUT 2. OUTPUT 3. NC. OUTPUT STYLE 3: PIN. GATE 2. COLLECTOR 3. EMITTER. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXX A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code = Pb Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb Free indicator, G or microdot, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB268B SOT 223 (TO 26) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Semiconductor Components Industries, LLC, 28
11 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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More informationBottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
D D D FDMS7658AS N-Channel PowerTrench SyncFET TM 3 V, 76 A,.9 mω Features Max r DS(on) =.9 mω at V GS = V, I D = 8 A Max r DS(on) =. mω at V GS = 7 V, I D = 6 A Advanced Package and Silicon Combination
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NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
More informationElectrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre
FQD8P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
More informationNTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationN-Channel SuperFET MOSFET
FCD5N-F5 N-Channel SuperFET MOSFET V,. A,. Ω Features V,.A, typ. R ds(on) =mω@v GS =V Ultra Low Gate Charge (Typ. Q g = nc) UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive On Board
More informationNTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
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More informationNTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
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NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
More informationNTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
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Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
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Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
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Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
More informationNTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
More informationElerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakd
FQD3P50 P-Channel QFET MOSFET - 500 V, -.1 A, 4.9 Ω Description This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
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NTD7N Power MOSFET V, 8 A, Single N Channel, Features Low R DS(on) High Current Capability Low Gate Charge These are Pb Free Devices Applications Electronic Brake Systems Electronic Power Steering Bridge
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N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
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NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
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FDS4675-F085 40V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor s advanced Power Tranch process. It has been optimized for power management
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NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
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NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
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FDPC444 Common Drain N-Channel PowerTrench MOSFET 3 V, 7 A, 4.3 mω Features Max r SS(on) = 4.3 mω at V GS = V, I SS = 7 A Max r SS(on) = 6.4 mω at V GS = 4.5 V, I SS = 3 A Pakage size/height: 3.3 x 3.3
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Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
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NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution
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NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
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NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
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Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 65 A, 40 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
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NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
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N Channel SUPERFET III Easy-Drive MOSFET 650 V, 0 A, 360 m Description SuperFET III MOSFET is ON Semiconductor s brand new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance
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NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
More informationDescription. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C
FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V,.8 A,.5 Ω Features.8 A, 600 V, R DS(on) =.5 Ω (Max.) @ = 10 V, = 1.4 A Low Gate Charge ( Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested RoHS compliant
More informationDescription. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 500 V V GSS Gate to Source Voltage ±30 V
FDD5N50FTM-WS N-Channel UniFET TM FRFET MOSFET 500 V, 3.5 A,.55 Ω Features R DS(on) =.25Ω (Typ.) @ V GS = 0 V, I D =.75 A Low Gate Charge (Typ. nc) Low C rss (Typ. 5 pf) Fast Switching 00% Avalanche Tested
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NTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 23 mω Ultra Low Gate Charge (Typ. Q g = 259 nc) Low Effective Output Capacitance (Typ.
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More informationFDPF18N20FT-G N-Channel UniFET TM FRFET MOSFET
FDPF8N20FT-G N-Channel UniFET TM FRFET MOSFET 200 V, 8 A, 40 m Features R DS(on) = 29 mω (Typ.) @ V GS = 0 V, I D = 9 A Low Gate Charge (Typ. 20 nc) Low C rss (Typ. 24 pf) 00% Avalanche Tested Improve
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Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 9 A, 65 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
More informationAbsolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1)
Data Sheet September 213 File Number 2253.2 N-Channel Power MOSFET 5V, 3A, 4 mω This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
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NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
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FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationDescription. Symbol Parameter FCH041N65EF-F155 Unit V DSS Drain to Source Voltage 650 V
FCH04N65EF N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 4 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 36 mω Ultra Low Gate Charge (Typ. Q g = 229 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationFeatures -4 A, -30 V. R DS(ON) G 3. = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage -30 V
FC65P Single P-Channel, Logic Level, PowerTrench TM MOSFET General escription This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially
More informationFeatures S 1. TA=25 o C unless otherwise noted
FC5P V P-Channel Logic Level PowerTrench MOSFET FC5P General escription This V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
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NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V DSS R
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FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive
More informationIRFM120 N-CHNNEL Electrical Characteristics (T =25% unless otherwise specified) Characteristic Min. Typ. Max. Units Test Condition BS Drain-Source Bre
dvanced Power MOSFET FETURES IEEE802.3af Compatible! valanche Rugged Technology! Rugged Gate Oxide Technology! Lower Input Capacitance! Improved Gate Charge! Extended Safe Operating rea! Lower Leakage
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
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More informationFeatures 2.5 A, 30 V. R DS(ON) = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage 30 V
FC5AN ual N-Channel Logic Level PowerTrench TM MOSFET General escription Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially
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NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationGeneral Description. Applications. Power management Load switch Q2 3 5 Q1
FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
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