NGTB15N60EG. IGBT - Short-Circuit Rated. 15 A, 600 V V CEsat = 1.7 V

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1 NGTB5N6EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged copackaged reverse recovery diode with a low forward voltage. Features Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications Soft Fast Reverse Recovery Diode s Short Circuit Capability Excellent Current versus Package Size Performance Density This is a PbFree Device Typical Applications White Goods Appliance Motor Control General Purpose Inverter AC and DC Motor Control ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V CES 6 V Collector TC = 25 TC = C I C 3 5 Pulsed collector current, T pulse limited by I CM 2 A T Jmax Diode forward TC = 25 TC = C I F 3 5 Diode pulsed current, T pulse limited by I FM 2 A T Jmax Gateemitter voltage V GE 2 V Power TC = 25 TC = C Short circuit withstand time V GE = 5 V, V CE = 4 V, T J +5 C P D 7 47 A A W t SC s Operating junction temperature range T J 55 to +5 Storage temperature range T stg 55 to +5 Lead temperature for soldering, /8 from case for 5 seconds C C T SLD 26 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 5 A, 6 V V CEsat =.7 V TO22 CASE 22A STYLE 9 ORDERING INFORMATION Device Package Shipping NGTB5N6EG G G CE A Y WW G C C MARKING DIAGRAM TO22 (PbFree) E 5N6G AYWW = Assembly Location = Year = Work Week = PbFree Package 5 Units / Rail Semiconductor Components Industries, LLC, 25 January, 25 Rev. 8 Publication Order Number: NGTB5N6E/D

2 NGTB5N6EG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction to case, for IGBT R JC.6 C/W Thermal resistance junction to case, for Diode R JC 3.76 C/W Thermal resistance junction to ambient R JA 6 C/W ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited V GE = V, I C = 5 A V (BR)CES 6 V Collectoremitter saturation voltage V GE = 5 V, I C = 5 A V GE = 5 V, I C = 5 A, T J = 5 C V CEsat V Gateemitter threshold voltage V GE = V CE, I C = 25 A V GE(th) V Collectoremitter cutoff current, gateemitter shortcircuited V GE = V, V CE = 6 V V GE = V, V CE = 6 V, T J = 5 C I CES 2 A Gate leakage current, collectoremitter shortcircuited V GE = 2 V, V CE = V I GES na Forward Transconductance V CE = 2 V, I C = 5 A g fs. S DYNAMIC CHARACTERISTIC Input capacitance C ies 26 Output capacitance V CE = 2 V, V GE = V, f = MHz C oes 64 Reverse transfer capacitance C res 42 Gate charge total Q g 8 Gate to emitter charge V CE = 48 V, I C = 5 A, V GE = 5 V Q ge 24 Gate to collector charge Q gc 33 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t d(on) 78 Rise time t r 3 Turnoff delay time T J = 25 C t d(off) 3 Fall time V CC = 4 V, I C = 5 A R g = 22 t f 2 Turnon switching loss V GE = V / 5 V E on.9 Turnoff switching loss E off.3 Total switching loss E ts.2 Turnon delay time t d(on) 76 Rise time t r 33 Turnoff delay time T J = 5 C t d(off) 33 Fall time V CC = 4 V, I C = 5 A R g = 22 t f 223 Turnon switching loss V GE = V / 5 V E on. Turnoff switching loss E off.5 Total switching loss E ts.6 DIODE CHARACTERISTIC Forward voltage V GE = V, I F = 5 A V GE = V, I F = 5 A, T J = 5 C V F pf nc ns mj ns mj V 2

3 NGTB5N6EG ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit DIODE CHARACTERISTIC Reverse recovery time T J = 25 C t rr 27 ns Reverse recovery charge I F = 5 A, V R = 2 V Q rr 35 nc Reverse recovery current di F /dt = 2 A/µs I rrm 5 A Reverse recovery time T J = 25 C t rr 35 ns Reverse recovery charge I F = 5 A, V R = 2 V Q rr nc Reverse recovery current di F /dt = 2 A/µs I rrm 7.5 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3

4 NGTB5N6EG TYPICAL CHARACTERISTICS 6 T J = 25 C 6 T J = 5 C V GE = 7 V to 3 V V 9 V 7 V V GE = 7 V to 5 V 3 V V 9 V 7 V Figure. IGBT Output Characteristics Figure 2. IGBT Output Characteristics T J = 4 C V GE = 7 V to 3 V V 9 V V CE = 2 V 25 C T J = 4 C 5 C 7 V Figure 3. IGBT Output Characteristics V GE, GATEEMITTER VOLTAGE (V) Figure 4. Typical Transfer Characteristics I C = A I C = 3 A I C = 5 A I C = 5 A T J, JUNCTION TEMPERATURE ( C) Figure 5. V CE(sat) vs. T J CAPACITANCE (pf) V GE = V, f = MHz C res C ies C oes Figure 6. Typical Capacitance 4

5 NGTB5N6EG TYPICAL CHARACTERISTICS I F, FORWARD CURRENT (A) C 4 C 5 C V F, FORWARD VOLTAGE (V) Figure 7. Diode Forward Characteristics V GE, GATEEMITTER VOLTAGE (V) I C = 5 A V CES = 2 V V CES = 48 V Q G, GATE CHARGE (nc) Figure 8. Typical Gate Charge.2 SWITCHING LOSS (mj) E off E on T J, JUNCTION TEMPERATURE ( C) V CE = 4 V V GE = 5 V I C = 5 A Figure 9. Switching Loss vs. Temperature SWITCHING TIME (ns) T J, JUNCTION TEMPERATURE ( C) Figure. Switching Time vs. Temperature t f t d(off) t d(on) t r V CE = 4 V V GE = 5 V I C = 5 A SWITCHING LOSS (mj) 3 2 V CE = 4 V V GE = 5 V T J = 5 C E on E off SWITCHING TIME (ns) t f t d(off) t d(on) t r V CE = 4 V V GE = 5 V T J = 5 C Figure. Switching Loss vs. I C Figure 2. Switching Time vs. I C 5

6 NGTB5N6EG TYPICAL CHARACTERISTICS SWITCHING LOSS (mj) V CE = 4 V V GE = 5 V I C = 5 A T J = 5 C E on E off Rg, GATE RESISTOR ( ) Figure 3. Switching Loss vs. Rg SWITCHING TIME (ns) t f t d(off) Rg, GATE RESISTOR ( ) t d(on) V CE = 4 V V GE = 5 V I C = 5 A T J = 5 C Figure 4. Switching Time vs. Rg t r SWITCHING ENERGY (mj) V GE = 5 V I C = 5 A T J = 5 C E on E off SWITCHING TIME (ns) t r t f t d(on) t d(off) V GE = 5 V I C = 5 A T J = 5 C Figure 5. Switching Loss vs. V CE Figure 6. Switching Time vs. CollectorEmitter Voltage.. dc operation Single Nonrepetitive Pulse T C = 25 C Curves must be derated linearly with increase in temperature ms s 5 s Figure 7. Safe Operating Area.. V GE = 5 V, T C = 25 C Figure 8. Reverse Bias Safe Operating Area 6

7 NGTB5N6EG TYPICAL CHARACTERISTICS THERMAL RESPONSE (Z JC).. 5% Duty Cycle 2% % 5% 2% % Single Pulse Duty Factor = t /t 2 Peak T J = P DM x Z JC + T C PULSE TIME (sec) Figure 9. IGBT Transient Thermal Impedance R JC =.6 Junction R R 2 R n C i = i /R i C C 2 C n Case R i ( C/W) i (sec). 7.E5.5.E THERMAL RESPONSE (Z JC).. 5% Duty Cycle 2% % 5% 2% % Single Pulse Junction R R 2 R n Case C i = i /R i PULSE TIME (sec) Duty Factor = t /t 2 Peak T J = P DM x Z JC + T C C C 2 Figure 2. Diode Transient Thermal Impedance R JC = 3.76 C n R i ( C/W) i (sec).895.e7.497.e e5. 7.E5.299.E Figure 2. Test Circuit for Switching Characteristics 7

8 NGTB5N6EG Figure 22. Definition of Turn On Waveform 8

9 NGTB5N6EG Figure 23. Definition of Turn Off Waveform 9

10 NGTB5N6EG PACKAGE DIMENSIONS TO22 CASE 22A9 ISSUE AH H Q Z L V G B N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE 9: PIN. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NGTB5N6E/D