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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at Please any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2 FPF1C2P5MF7AM F1 Module solution for PV-Application General Description Fairchild's brand-new DC-AC module is designed for a power stage that needs more compact design. And the Press-fit technology provides simple and reliable mounting. This module is optimized for the application such as solar inverter where a high efficiency and robust design are needed. Electrical Features High Efficiency Low Conduction and Switching losses Low V CE(sat) : 1.1 V Ic = 3 A Low R DS(ON) : 9 mω max. Fast Recovery Body Diode Mechanical Features Compact size : F1 Package Press-fit contact technology Package Code: F1 July. 214 Applications Solar Inverter Certification UL approved (E2924) Internal Circuit Diagram Absolute Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Description Rating Units Rectifier Diode V RRM Peak Repetitive Reverse Voltage 62 V I Fav Diode Continuous Forward T C = 8 C 27 A I FSM Diode Maximum Forward Surge Current 245 A I 2 t I 2 t value 3 A 2 s P D Maximum Power T C = 25 C 77 W T J Operating Junction Temperature -4 to +15 C 214 Fairchild Semiconductor Corporation 1
3 Absolute Maximum Ratings T C = 25 C unless otherwise noted. (Continued) Symbol Description Rating Units High-side IGBT V CES Collector-Emitter Voltage 62 V V GES Gate-Emitter Voltage ± 2 V I C Collector T C = 8 C 39 A I CM Pulsed Collector Current 9 A I F Diode Continuous Forward T C = 8 C 22 A I FM Diode Maximum Forward Current 9 A P D Maximum Power T C = 25 C 231 W T J Operating Junction Temperature -4 to +15 C Low-side MOSFET V DSS Drain-Source Voltage 62 V V GSS Gate-Source Voltage ± 2 V I D Continuous Drain T C = 25 C 36 T C = 8 C 27 A I DM Pulsed Drain Current Limited by T J max. 156 A I S Continuous Source-Drain Forward Current 36 A I SM Maximum Pulsed Source-Drain Forward Curren56 A P D Maximum Power T C = 25 C 25 W T J Operating Junction Temperature -4 to +15 C Module T STG Storage Temperature -4 to +125 C V ISO Isolation AC 1 MIN 25 V Iso._Material Internal Isolation Material Al 2 O 3 F MOUNT Mounting Force per Clamp 2 to 5 N Weight Typ. 22 g Creepage Terminal to Heatsink 11.5 mm Terminal to Terminal 6.3 mm Clearance Terminal to Heatsink 1. mm Terminal to Terminal 5. mm Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity / Tray FPF1C2P5MF7AM FPF1C2P5MF7AM F1 Tray Fairchild Semiconductor Corporation 2
4 Electrical Characteristics T C = 25 C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Units Rectifier Diode V F Diode Forward Voltage I F = 3 A V I F = 3 C = 125 C V I R Reverse Leakage Current V R = 62 V μa R θjc Thermal Resistance of Junction to Case per Diode C/W High-side IGBT Off Characteristics BV CES Collector-Emitter Breakdown Voltage V GE = V, I C = 1 ma V I CES Collector Cut-off Current V CE = V CES, V GE = V μa I GES Gate-Emitter Leakage Current V GE = V GES, V CS = V μa On Characteristics V GE(th) Gate-Emitter Threshold Voltage V GE = V CE, I C = 3 ma V V CE(sat) Collector-Emitter Saturation Voltage I C = 3 A, V GE = 15 V V I C = 3 A, V GE = 15 C = 125 C V I C = 6 A, V GE = 15 V V Switching Characteristics Q g Total Gate Charge V DS = 38 V, V GS = V V, I D = 3 A nc R θjc Thermal Resistance of Junction to Case per IGBT C/W * Note : High-side IGBT is optimized for line frequency switching such as 5/6 Hz. High-Side FWD V FM Diode Forward Voltage I F = 15 A, V GS = V V t rr Reverse Recovery Time I F = 15 A ns I rr Reverse Recovery Current di F /dt = 165 A/μs A Q rr Reverse Recovery Charge nc t rr Reverse Recovery Time I F = 15 A - 43 ns I rr Reverse Recovery Current di F /dt = 15 C = 125 C A Q rr Reverse Recovery Charge nc R θjc Thermal Resistance of Junction to Case per Diode C/W 214 Fairchild Semiconductor Corporation 3
5 Electrical Characteristics T C = 25 C unless otherwise noted. (Continued) Symbol Parameter Conditions Min. Typ. Max. Units Low-Side MOSFET Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = V, I D = 1 ma V I DSS Zero Gate Voltage Drain Current V DS = 62 V, V GS = V μa I GSS Gate-Body Leakage Current, Forward V GS = 2 V, V DS = V 2.5 μa On Characteristics V GS(th) Gate-Source Threshold Voltage V GS = V DS, I D = 25 ma V R DS(ON) Static Drain-Source On-Resistance I D = 27 A, V GS = 1 V mω I D = 27 A, V GS = 1 C = 125 C mω I D = 47 A, V GS = 1 V mω V SD Source-Drain Diode Forward Voltage I SD = 27 A, V GS = V V I SD = 47 A, V GS = V V Switching Characteristics t d(on) Turn-On Delay Time V CC = 38 V ns t I D = 27 A r Rise Time ns V GS = 1 V t d(off) Turn-Off Delay Time ns R G = 1 Ω t f Fall Time Inductive Load ns E ON Turn-On Switching Loss per Pulse T C = 25 C μj E OFF Turn-Off Switching Loss per Pulse μj t d(on) Turn-On Delay Time V CC = 38 V ns t I D = 27 A r Rise Time ns V GS = 1 V t d(off) Turn-Off Delay Time ns R G = 1 Ω t f Fall Time Inductive Load ns E ON Turn-On Switching Loss per Pulse T C = 125 C μj E OFF Turn-Off Switching Loss per Pulse μj Q g Total Gate Charge V DS = 38 V, V GS = V...+1 V, I D = 27 A nc R θjc Thermal Resistance of Junction to Case per Chip C/W 214 Fairchild Semiconductor Corporation 4
6 Typical Performance Characteristic Fig 1. Typical Output Characteristics - IGBT I C, Collector Current [A] VGE = 2 V 15 V 12 V 1 V 8 V T C = 25 o C V CE, Collector-Emitter Voltage [V] Fig 3. Typical Saturation Voltage Characteristics - IGBT I C, Collector Current [A] Common Emitter VGE = 15 V TC = 25 C TC = 8 C TC = 125 C V CE, Collector-Emitter Voltage [V] Fig 2. Typical Output Characteristics - IGBT I C, Collector Current [A] VGE = 2 V 15 V 12 V 1 V 8 V T C = 125 o C V CE, Collector-Emitter Voltage [V] Fig 4. Transient Thermal Response Curve - IGBT Z θjc (t), Thermal Response [ C/W] * Notes : P DM t 2 1. ZθJC(t) =.54 C/W Max. 2. Duty Factor, D = t1/t2 Single Pulse 3. TJ - TC = PDM*ZθJC(t) 1E-3 1E-5 1E-4 1E , Rectangular Pulse Duration [sec] Fig 5. Typical Forward Voltage Drop vs. Forward Current - High-Side FWD I F, Forward Current [A] TC = 25 C TC = 8 C TC = 125 C V F, Forward Voltage [V] Fig 6. Transient Thermal Response Curve - High-Side FWD Z θjc (t), Thermal Response [ C/W] P DM t * Notes : Single Pulse 1. ZθJC(t) = 1.61 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZθJC(t) 1E-3 1E-5 1E-4 1E , Rectangular Pulse Duration [sec] 214 Fairchild Semiconductor Corporation 5
7 Typical Performance Characteristic (Continued) Fig 7. On-Region Characteristics - MOSFET ID, Drain Current[A] I D, Drain Current[A] VGS VGS = = 2V2 V 15V15 V 1V1 V 8V8 V 6V6 V 2 2 * * Note: μs pulse test test V DS, V DS, Drain-Source Voltage[V] Fig 9. On-Resistance Variation vs. Temperature - MOSFET R DS(ON) [Ω], [Normalized] Drain to Source On-Resistance * Notes: 1. VGS = 1 V 2. ID = 27 A T C, Case Temperature [ C] Fig 8. On-Resistance Variation vs. Drain Current and Gate Voltage - MOSFET R DS(ON) [Ω], Drain to Source On-Resistance VGS = 1 V VGS = 2 V I D, Drain Current [A] Fig 1. Body Diode Forward Voltage Variation vs. Source Current and Temperature - MOSFET I S, Reverse Drain Current [A] TC = 25 C TC = 8 C TC = 125 C V SD, Body Diode Forward Voltage [V] Fig 11. Turn-Off Loss vs. Gate Resistor Values - MOSFET E off, Turn-off Loss [mj] * Notes: 1. with an inductive load 2. VDS = 38 V, ID = 27 A 3. VGS = 1 V T C = 125 C T C = 25 C Fig 12. Turn-On Loss vs. Gate Resistor Values - MOSFET E on, Turn-on Loss [mj] * Notes: 1. with an inductive load 2. VDS = 38 V, ID = 27 A 3. VGS = 1 V T C = 125 C T C = 25 C R g, Gate Resistance [Ω] R g, Gate Resistance [Ω] 214 Fairchild Semiconductor Corporation 6
8 Typical Performance Characteristic (Continued) Fig 13. Turn-Off Loss vs. Drain Current - MOSFET E off, Turn-off Loss [uj] * Notes: 1. with an inductive load 2. VDS = 38 V, ID = 27 A 3. VGS = 1 V 4. Rg = 1 Ω T C = 125 C T C = 25 C I D, Drain Current [A] Fig 15. Transient Thermal Response Curve - MOSFET Z θjc (t), Thermal Response [ C/W] P DM t 2 1E-3 Single Pulse * Notes : 1. ZθJC(t) =.5 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZθJC(t) 1E-4 1E-5 1E-4 1E , Rectangular Pulse Duration [sec] Fig 14. Turn-On Loss vs. Drain Current - MOSFET E on, Turn-on Loss [mj] * Notes: 1. with an inductive load 2. VDS = 38 V, ID = 27 A 3. VGS = 1 V 4. Rg = 1 Ω T C = 125 C T C = 25 C I D, Drain Current [A] Fig 16. Typical Forward Voltage Drop vs. Forward Current - Rectifier Diode I F, Forward Current [A] TC = 25 C TC = 8 C TC = 125 C V F, Forward Voltage [V] Fig 17. Transient Thermal Response Curve - Rectifier Diode 1 Z θjc (t), Thermal Response [ C/W] P DM t * Notes : Single Pulse 1. ZθJC(t) = 1.62 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZθJC(t) 1E-3 1E-5 1E-4 1E , Rectangular Pulse Duration [sec] 214 Fairchild Semiconductor Corporation 7
9 Internal Circuit Diagram Package Outlines [mm] IN2 IN2 IN1 IN1 D1 D4 RTN1 RTN1 D2 G1 E1 D3 GM1 SM1 DC+ RTN2 G2 E2 OUT1 OUT1 GM2 SM2 RTN2 DC+ RTN2 RTN2 OUT2 OUT2 214 Fairchild Semiconductor Corporation 8
10 214 Fairchild Semiconductor Corporation 9
11 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor E. 32nd Pkwy, Aurora, Colorado 811 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
12 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: FPF1C2P5MF7AM
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
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FQD3P50 P-Channel QFET MOSFET - 500 V, -.1 A, 4.9 Ω Description This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
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BSS BSS N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high
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FCMT80N65S3 N-Channel SUPERFET III Easy-Drive MOSFET 650 V, 7 A, 80 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 52 mω Ultra Low Gate Charge (Typ. Q g = 33 nc) Low Effective Output Capacitance (Typ.
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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