BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
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1 BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages are Available* Applications Power Supply Output Rectification Power Management Instrumentation ULTRAFAST RECTIFIER AMPERES, 0 VOLTS t rr = 35 ns 1 3 2, 4 Mechanical Characteristics Case: Epoxy, Molded Epoxy Meets UL in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260 C Max. for Seconds ESD Rating: Human Body Model 3B Machine Model C TO2AB CASE 221A PLASTIC MARKING DIAGRAM AYWW BYV32-0G AKA A = Assembly Location Y = Year WW = Work Week BYV320 = Device Code G = PbFree Package AKA = Diode Polarity ORDERING INFORMATION Device Package Shipping BYV320 BYV320G TO2 TO2 (PbFree) 50 Units / Rail 50 Units / Rail *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 08 May, 08 Rev. 4 1 Publication Order Number: BYV320/D
2 BYV320 MAXIMUM RATINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, T C = 156 C Per Leg Total Device Peak Rectified Forward Current (Square Wave, khz), T C = 154 C Per Diode Leg Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Rating Symbol Value Unit V RRM V RWM V R I F(AV) 0 V I FM A I FSM 0 A Operating Junction Temperature and Storage Temperature T J, T stg 65 to +175 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase Min. Pad R JC 3.0 C/W Maximum Thermal Resistance, JunctiontoAmbient Min. Pad R JA 60 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (i F = 5.0 A, T j = 0 C) (i F = A, T j = 25 C) Instantaneous Reverse Current (Note 1) (Rated Voltage, T j = 0 C) (Rated Voltage, T j = 25 C) Maximum Reverse Recovery Time (I F = 1.0 A, di/dt = 50 A/ s) (I F = 0.5 A, I R = 1.0 A, I REC = 0.25 A) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle % Characteristic Symbol Min Typical Max Unit v F i R t rr A V A ns 2
3 BYV320, INSTANTANEOUS FORWARD CURRENT (AMPS) i F T J = 175 C C 0.9 v F, INSTANTANEOUS VOLTAGE (VOLTS) 0 C Figure 1. Typical Forward Voltage, Per Leg I F, INSTANTANEOUS FORWARD CURRENT (A), REVERSE CURRENT ( A) I R V F, INSTANTANEOUS FORWARD VOLTAGE (V) T J = 175 C 40 0 C Figure 2. Maximum Forward Voltage 25 C 175 C 0 C 25 C V R, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current, Per Leg* * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V R is sufficiently below rated V R. I F(AV), AVERAGE FORWARD CURRENT (A) T C, CASE TEMPERATURE ( C) Figure 4. Current Derating, Case, Per Leg I F(AV), AVERAGE FORWARD CURRENT (A) T A, AMBIENT TEMPERATURE ( C) R JA = C/W R JA = 60 C/W (NO HEATSINK) Figure 5. Current Derating, Ambient, Per Leg 3
4 BYV320, AVERAGE POWER DISSIPATION (WATTS) P F(AV) T J = 175 C I F(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 6. Power Dissipation, Per Leg 00 C, CAPACITANCE (pf) T J = 25 C V R, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance, Per Leg R(t) ( C/W) % Duty Cycle % % 5% 2% 1% Single Pulse PULSE TIME (sec) Figure 8. Thermal Response, JunctiontoAmbient 4
5 BYV320 PACKAGE DIMENSIONS TO2 CASE 221A09 ISSUE AF H Q Z L V G B N D A K F T U S R J C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 53, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative BYV320/D
6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: BYV32-0
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110CAT3G Series, SZ110CAT3G Series 400 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
Distributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. MUR5, MUR55, MUR5, MUR54, MUR56 Preferred Devices SWTCHMODE Power Rectifiers
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note T L = 2 C, Pulse Width = ms P PK 600 W DC Power T L = 7 C Meas
600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent
MMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxET Series, SZMMSZxxxETG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
BRHCT, BRBHCT, BRBHCT AXIU RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking V
BRHCT, BRBHCT, BRBHCT- SWITCHODE Power Rectifier V, A eatures and Benefits Low orward Voltage:.67 V @ 25 C Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface
SA5.0A Series 500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
5 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors Unidirectional The SA5.A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
MKP1V120 Series. Sidac High Voltage. Bidirectional Triggers 0.9 AMPERES RMS VOLTS
MKP112 Series Sidac High oltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
1SMA5.0AT3 Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
Adc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
MMSZxxxET1G Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxETG Series, SZMMSZxxxETG Series Zener Voltage Regulators mw SOD Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD package. These devices
NGTB15N60EG. IGBT - Short-Circuit Rated. 15 A, 600 V V CEsat = 1.7 V
NGTB5N6EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in
MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear
MAC16D, MAC16M, MAC16N. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 400 thru 800 VOLTS
MAC6D, MAC6M, MAC6N Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications
MJD9, NJVMJD9T4G (PNP) MJD3, NJVMJD3T4G (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed
MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
MBRS2040LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.
MBRS24LT3 Surface Mount Schottky Power Rectifier Power Surface Mount Package... employing the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide