FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
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1 FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: V CE(sat) =.6 I C = 5 A % of the Parts Tested for I LM () High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant General Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4 th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applica-tions where low conduction and switching losses are essential. Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT E C G C COLLECTOR (FLANGE) G E Absolute Maximum Ratings Symbol Description FGH5T65SQD-F55 Unit V CES Collector to Emitter Voltage 65 V V GES Transient Gate to Emitter Voltage ± 3 V Gate to Emitter Voltage ± 2 V I C Collector A Collector T C = o C 5 A I LM () Pulsed Collector 2 A I CM (2) Pulsed Collector Current 2 A I F Diode Forward 5 A Diode Forward T C = o C 3 A I FM Pulsed Diode Maximum Forward Current 2 A P D Maximum Power 268 W Maximum Power T C = o C 34 W T J Operating Junction Temperature -55 to +75 T stg Storage Temperature Range -55 to +75 o C o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Notes:.V CC = 4 V, V GE = 5 V, I C = 2 A, R G = 3 Ω, Inductive Load 2. Repetitive rating: Pulse width limited by max. junction temperature 26 Semiconductor Components Industries, LLC. September-27, Rev. 2 Publication Order Number: FGH5T65SQD/D
2 Thermal Characteristics Symbol Parameter FGH5T65SQD-F55 Unit R θjc (IGBT) Thermal Resistance, Junction to Case, Max..56 R θjc (Diode) Thermal Resistance, Junction to Case, Max..25 R θja Thermal Resistance, Junction to Ambient, Max. 4 o C/W Package Marking and Ordering Information Part Number Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted o C/W o C/W Top Mark Package Packing Method Reel Size Tape Width Qty per Tube FGH5T65SQD-F55 FGH5T65SQD TO-247 G3 Tube Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = ma V BV CES / T J Temperature Coefficient of Breakdown Voltage I C = ma, Reference to 25 o C V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V µa I GES G-E Leakage Current V GE = V GES, V CE = V - - ±4 na FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT On Characteristics V GE(th) G-E Threshold Voltage I C = 5 ma, V CE = V GE V I C = 5 A, V GE = 5 V, V V CE(sat) Collector to Emitter Saturation Voltage I C = 5 A, V GE = 5 V, V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = 3 V, V GE = V, f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 4 V, I C = 2.5 A, ns t f Fall Time R G = 4.7 Ω, V GE = 5 V, ns E on Turn-On Switching Loss Inductive Load, uj E off Turn-Off Switching Loss uj E ts Total Switching Loss uj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 4 V, I C = 25 A, ns t f Fall Time R G = 4.7 Ω, V GE = 5 V, ns E on Turn-On Switching Loss Inductive Load, uj E off Turn-Off Switching Loss uj E ts Total Switching Loss uj 2
3 Electrical Characteristics of the IGBT (Continued) Symbol Parameter Test Conditions Min. Typ. Max Unit t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 4 V, I C = 2.5 A, ns t f Fall Time R G = 4.7 Ω, V GE = 5 V, ns E on Turn-On Switching Loss Inductive Load, uj E off Turn-Off Switching Loss - - uj E ts Total Switching Loss uj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 4 V, I C = 25 A, ns t f Fall Time R G = 4.7 Ω, V GE = 5 V, ns E on Turn-On Switching Loss Inductive Load, uj E off Turn-Off Switching Loss uj E ts Total Switching Loss uj Q g Total Gate Charge nc Q ge Gate to Emitter Charge V CE = 4 V, I C = 5 A, V GE = 5 V nc Q gc Gate to Collector Charge nc FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Electrical Characteristics of the Diode T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max Unit V FM Diode Forward Voltage I F = 3 A E rec t rr Q rr Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge I F =3 A, di F /dt = 2 A/µs uj V ns nc 3
4 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] V 5V 2V V V GE = 8V Figure 3. Typical Saturation Voltage Characteristics Collector Current, IC [A] V GE = 5V Figure 2. Typical Output Characteristics Collector Current, IC [A] V 5V 2V V V GE = 8V Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 3 2 V GE = 5V A 5A I C = 25A FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Collector-Emitter Case Temperature, T C [ o C] Figure 5. Saturation Voltage vs. V GE Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] I C = 25A 5A A Gate-Emitter Voltage, V GE [V] Collector-Emitter Voltage, VCE [V] I C = 25A 5A A Gate-Emitter Voltage, V GE [V] 4
5 Typical Performance Characteristics Figure 7. Capacitance Characteristics Capacitance [pf] V GE = V, f = MHz C ies C oes C res Figure 9. Turn-on Characteristics vs. Gate Resistance t r Figure 8. Gate charge Characteristics Gate-Emitter Voltage, VGE [V] V CC = 2V 3V 4V Gate Charge, Q g [nc] Figure. Turn-off Characteristics vs. Gate Resistance FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT t d(off) Switching Time [ns] t d(on) V CC = 4V, V GE = 5V I C = 5A Gate Resistance, R G [Ω] Switching Time [ns] V CC = 4V, V GE = 5V I C = 5A Gate Resistance, R G [Ω] t f Figure. Switching Loss vs. Gate Resistance Switching Loss [uj] 5 E on E off V CC = 4V, V GE = 5V I C = 5A Gate Resistance, R G [Ω] Switching Time [ns] Figure 2. Turn-on Characteristics vs. Collector Current 2 V GE = 5V, R G = 4.7Ω t r t d(on) Collector Current, I C [A] 5
6 Typical Performance Characteristics Figure 3. Turn-off Characteristics vs. Collector Current Switching Time [ns] 5 t d(off) V GE = 5V, R G = 4.7Ω Collector Current, I C [A] Figure 5. Load Current Vs. Frequency Collector Current, [A] T C = o C Square Wave T J <= 75 o C, D =.5, V CE = 4V k k k M Switching Frequency, f[hz] t f V GE = 5/V, R G = 4.7Ω T C = 75 o C Switching Loss [uj] Collector Current, Ic [A] Figure 4. Switching Loss vs. Collector Current E on E off V GE = 5V, R G = 4.7Ω Collector Current, I C [A] Figure 6. SOA Characteristics 3 DC *Notes:. ms µs ms µs 2. T J = 75 o C 3. Single Pulse. FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Figure 7. Forward Characteristics Forward Current, IF [A] 5 T = 75 o C C T C = 75 o C T C = 75 o C Forward Voltage, V F [V] Reverse Recovery Currnet, Irr [A] Figure 8. Reverse Recovery Current di/dt = 2A/µs di/dt = A/µs di/dt = 2A/µs di/dt = A/µs Forward Current, I F [A] 6
7 Typical Performance Characteristics Figure 9. Reverse Recovery Time Reverse Recovery Time, trr [ns] di/dt = 2A/µs di/dt = A/µs Forward Current, I F [A].6 Stored Recovery Charge, Qrr [nc] Figure 2. Stored Charge di/dt = A/µs Forward Current, I F [A] Figure 2.Transient Thermal Impedance of IGBT di/dt = 2A/µs FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Thermal Response [Zthjc] Duty Factor, D = t/t2 single pulse Peak T j = Pdm x Zthjc + T C Rectangular Pulse Duration [sec] P DM t t 2 Figure 22.Transient Thermal Impedance of Diode 2 Thermal Response [Zthjc] single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C Rectangular Pulse Duration [sec] P DM t t 2 7
8 Mechanical Dimensions FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. 8
9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
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More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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