RURG8060-F085 80A, 600V Ultrafast Rectifier

Size: px
Start display at page:

Download "RURG8060-F085 80A, 600V Ultrafast Rectifier"

Transcription

1 RURG86F85 8A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr I F =8A ) Low Forward Voltage( V F I F =8A ) Avalanche Energy Rated AECQ Qaulified Applications Automotive DCDC converter Automotive On Board Charger Switching Power Supply Power Switching Circuits 8A, 6V Ultrafast Rectifier The RURG86F85 is an ultrafast diode with soft recovery characteristics (trr < 9ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/ clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Pin Assignments TO2472L. Cathode 2. Anode 2. Cathode 2. Anode Absolute Maximum Ratings = 25 C unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage 6 V V RWM Working Peak Reverse Voltage 6 V V R DC Blocking Voltage 6 V I F(AV) Average Rectified Forward = 25 C 8 A I FSM Nonrepetitive Peak Surge Current (Halfwave Phase 5Hz) 24 A E AVL Avalanche Energy (.6A, 4mH) 5 mj T J, T STG Operating Junction and Storage Temperature 55 to +75 C Thermal Characteristics = 25 C unless otherwise noted Symbol Parameter Max Units R θjc Maximum Thermal Resistance, Junction to Case.85 C/W R θja Maximum Thermal Resistance, Junction to Ambient 5 C/W Package Marking and Ordering Information Device Marking Device Package Tube Quantity RURG86 RURG86F85 TO Semiconductor Components Industries, LLC. August27, Rev. 3 Publication Order Number: RURG86F85 /D

2 Electrical Characteristics = 25 C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Units I R Instantaneous Reverse Current V R = 6V = 25 C 25 ua = 75 C 2 ma V FM t rr 2 Instantaneous Forward Voltage I F = 8A = 25 C = 75 C Reverse Recovery Time I F =A, di/dt = A/μs, V CC = 39V I F =8A, di/dt = A/μs, V CC = 39V Notes:. Pulse : Test Pulse width = 3μs, Duty Cycle = 2% 2. Guaranteed by design V V = 25 C ns = 25 C = 75 C ns ns t a Reverse Recovery Time I F =8A, di/dt = A/μs, = 25 C 38 ns t b V CC = 39V 36 ns Q rr Reverse Recovery Charge 3 nc E AVL Avalanche Energy I AV =.6A, L=4mH 5 mj Test Circuit and Waveforms 2

3 Typical Performance Characteristics Figure. Typical Forward Voltage Drop vs. Forward Current Forward Current, I F [A] Figure 3.Typical Junction Capacitance Capacitances, Cj [pf] Forward Voltage, V F [V] = 75 o C = 25 o C = 25 o C Typical Capacitance at V = 247pF Figure 2. Typical Reverse Current vs. Reverse Voltage Reverse Current, I R [μa].. E3 = 75 o C = 25 o C = 25 o C E Reverse Voltage, V R [V] Figure 4. Typical Reverse Recovery Time vs. di/dt Reverse Recovery Time, t rr [ns] = 75 o C = 25 o C = 25 o C I F = 8A. Reverse Voltage, V R [V] Figure 5. Typical Reverse Recovery Current vs. di/dt di/dt [A/μs] Figure 6. Forward Current Derating Curve Reverse Recovery Current, I rr [A] = 75 o C = 25 o C = 25 o C I F = 8A di/dt [A/μs] Average Forward Current, I F(AV) [A] Case temperature, [ o C] 3

4 Typical Performance Characteristics (Continued) Reverse Recovery Charge, Q rr [nc] Figure 7. Reverse Recovery Charge I F = 8A = 75 o C = 25 o C = 25 o C di/dt [A/μs] Figure 8. Transient Thermal Response Curve Z thjc (t), Thermal Response. D= single pulse * Notes :. Z thjc (t) =.85 C/W Typ. 2. Duty Factor, D=t /t 2 3. T JM = P DM * Z thjc (t) P DM t, Square Wave Pulse Duration [sec] t t 2 4

5 Mechanical Dimensions TO2472L Dimensions in Millimeters 5

6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

RURP1560-F085 15A, 600V Ultrafast Rectifier

RURP1560-F085 15A, 600V Ultrafast Rectifier RURP56F85 5A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =52ns(Typ.) @ I F =5A ) Low Forward Voltage( V F =.5V(Max.) @ I F =5A ) Avalanche Energy Rated AECQ Qualified Applications Automotive

More information

RURD660S9A-F085 Ultrafast Power Rectifier, 6A 600V

RURD660S9A-F085 Ultrafast Power Rectifier, 6A 600V RURD66S9AF85 Ultrafast Power Rectifier, 6A 6V Features High Speed Switching ( t rr =63ns(Typ.) @ =6A ) Low Forward Voltage( V F =.26V(Typ.) @ =6A ) Avalanche Energy Rated AECQ Qualified Applications General

More information

50A, 600V Hyperfast Rectifier

50A, 600V Hyperfast Rectifier RHRG56F85 5A, 6V Hyperfast Rectifier Features High Speed Switching ( t rr =45(Typ.) @ I F =5A ) Low Forward Voltage( V F =.67V(Typ.) @ I F =5A ) Avalanche Energy Rated AECQ Qualified Applicatio Switching

More information

RHRP A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

RHRP A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013 RHRP2 Data Sheet November 23 A, 2 V, Hyperfast Diode Features Hyperfast Recovery = 7 ns (@ I F = A) The RHRP2 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast

More information

Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre

Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre FQD8P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.

More information

BAV103 High Voltage, General Purpose Diode

BAV103 High Voltage, General Purpose Diode BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless

More information

FFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description.

FFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description. FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse

More information

BAV ma 70 V High Conductance Ultra-Fast Switching Diode

BAV ma 70 V High Conductance Ultra-Fast Switching Diode BAV99 200 ma 70 V High Conductance Ultra-Fast Switching Diode Features High Conductance: I F = 200 ma Fast Switching Speed: t rr < 6 ns Maximum Small Plastic SOT-2 Package Series-Pair Configuration Applications

More information

FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT

FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,

More information

Device Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT mm 12mm 4000

Device Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT mm 12mm 4000 FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced

More information

N-Channel Logic Level PowerTrench MOSFET

N-Channel Logic Level PowerTrench MOSFET FDN56N-F85 N-Channel Logic Level PowerTrench MOSFET 6 V,.6 A, 98 mω Features R DS(on) = 98 mω at V GS = 4.5 V, I D =.6 A R DS(on) = 8 mω at V GS = V, I D =.7 A Typ Q g(tot) = 9. nc at V GS = V Low Miller

More information

FFSP1665A/D. Silicon Carbide Schottky Diode 650 V, 16 A Features. FFSP1665A Silicon Carbide Schottky Diode. Description.

FFSP1665A/D. Silicon Carbide Schottky Diode 650 V, 16 A Features. FFSP1665A Silicon Carbide Schottky Diode. Description. FFSP1665A Silicon Carbide Schottky Diode 65 V, 16 A Features Max Junction Temperature 175 o C Avalanche Rated 81 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse

More information

Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakd

Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakd FQD3P50 P-Channel QFET MOSFET - 500 V, -.1 A, 4.9 Ω Description This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced

More information

FGH12040WD 1200 V, 40 A Field Stop Trench IGBT

FGH12040WD 1200 V, 40 A Field Stop Trench IGBT FGH12040WD 1200 V, 40 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J = 175 o C Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: V CE(sat) = 2.3

More information

FDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ

FDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ FDS898 N-Channel PowerTrench MOSFET V, 7A, 3mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or

More information

650V, 40A Field Stop Trench IGBT

650V, 40A Field Stop Trench IGBT FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs

More information

Packing Method. Symbol Parameter Test Conditions Min. Typ. Max. Unit V CE(sat) Saturation Voltage V C = 25 A, V GE = 15 V,

Packing Method. Symbol Parameter Test Conditions Min. Typ. Max. Unit V CE(sat) Saturation Voltage V C = 25 A, V GE = 15 V, FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj

More information

FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω

FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely

More information

FFSH5065A. Silicon Carbide Schottky Diode 650 V, 50 A

FFSH5065A. Silicon Carbide Schottky Diode 650 V, 50 A Silicon Carbide Schottky Diode 65 V, 5 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

Description. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C

Description. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V,.8 A,.5 Ω Features.8 A, 600 V, R DS(on) =.5 Ω (Max.) @ = 10 V, = 1.4 A Low Gate Charge ( Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested RoHS compliant

More information

FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT

FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage:

More information

N-Channel PowerTrench MOSFET

N-Channel PowerTrench MOSFET FDBL86363-F85 N-Channel PowerTrench MOSFET 8 V, 4 A,. mω Features Typical R DS(on) =.5 mω at V GS = V, I D = 8 A Typical Q g(tot) = 3 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to

More information

FDD8444L-F085 N-Channel PowerTrench MOSFET

FDD8444L-F085 N-Channel PowerTrench MOSFET M E N FDD8444L-F85 N-Channel PowerTrench MOSFET 4V, 5A, 6.mΩ Features Applications Typ r DS(on) = 3.8mΩ at V GS = 5V, I D = 5A Automotive Engine Control Typ Q g(tot) = 46nC at V GS = 5V Powertrain Management

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted NDS6 NDS6 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,

More information

FGH40N60SFDTU-F V, 40 A Field Stop IGBT

FGH40N60SFDTU-F V, 40 A Field Stop IGBT FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive

More information

N-Channel PowerTrench MOSFET

N-Channel PowerTrench MOSFET FDMS86369-F85 N-Channel PowerTrench MOSFET 8 V, 65 A, 7.5 mω Features Typical R DS(on) = 5.9 mω at V GS = V, I D = 65 A Typical Q g(tot) = 35 nc at V GS = V, I D = 65 A UIS Capability RoHS Compliant Qualified

More information

N-Channel SuperFET MOSFET

N-Channel SuperFET MOSFET FCD5N-F5 N-Channel SuperFET MOSFET V,. A,. Ω Features V,.A, typ. R ds(on) =mω@v GS =V Ultra Low Gate Charge (Typ. Q g = nc) UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive On Board

More information

Features D G. T A =25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1a) 3.8. (Note 1b) 1.6

Features D G. T A =25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1a) 3.8. (Note 1b) 1.6 FDD564P 6V P-Channel PowerTrench MOSFET FDD564P General Description This 6V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.

More information

N-Channel PowerTrench MOSFET

N-Channel PowerTrench MOSFET FDBL8636-F85 N-Channel PowerTrench MOSFET 8 V, 3 A,.4 mω Features Typical R DS(on) =. mω at V GS = V, I D = 8 A Typical Q g(tot) = 72 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to

More information

Sept 2017 FCA47N60F N-Channel SuperFET FRFET MOSFET. Description TO-3PN

Sept 2017 FCA47N60F N-Channel SuperFET FRFET MOSFET. Description TO-3PN FCA47N60F N-Channel SuperFET FRFET MOSFET 600 V, 47 A, 73 mω Features 650 V @ T J = 150 C Typ. R DS(on) = 62 mω Fast Recovery Time (Typ. T rr = 240 ns) Ultra Low Gate Charge (Typ. Q g = 210 nc) Low Effective

More information

Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V

Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V D D D FDMS7658AS N-Channel PowerTrench SyncFET TM 3 V, 76 A,.9 mω Features Max r DS(on) =.9 mω at V GS = V, I D = 8 A Max r DS(on) =. mω at V GS = 7 V, I D = 6 A Advanced Package and Silicon Combination

More information

PUBLICATION ORDERING INFORMATION. Semiconductor Components Industries, LLC

PUBLICATION ORDERING INFORMATION.  Semiconductor Components Industries, LLC FDS39 FDS39 V N-Channel Dual PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or

More information

FDH50N50 / FDA50N50 N-Channel UniFET TM MOSFET 500 V, 48 A, 105 mω Features

FDH50N50 / FDA50N50 N-Channel UniFET TM MOSFET 500 V, 48 A, 105 mω Features FDH5N5 / FDA5N5 N-Channel UniFET TM MOSFET 5 V, 48 A, 15 mω Features R DS(on) = 89 mω (Typ.) @ = 1 V, = 24 A Low Gate Charge (Typ. 15 nc) Low C rss (Typ. 45 pf) 1% Avalanche Tested Improved dv/dt Capability

More information

NTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features

NTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features NTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 23 mω Ultra Low Gate Charge (Typ. Q g = 259 nc) Low Effective Output Capacitance (Typ.

More information

Description. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 500 V V GSS Gate to Source Voltage ±30 V

Description. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 500 V V GSS Gate to Source Voltage ±30 V FDD5N50FTM-WS N-Channel UniFET TM FRFET MOSFET 500 V, 3.5 A,.55 Ω Features R DS(on) =.25Ω (Typ.) @ V GS = 0 V, I D =.75 A Low Gate Charge (Typ. nc) Low C rss (Typ. 5 pf) Fast Switching 00% Avalanche Tested

More information

Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1)

Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1) Data Sheet September 213 File Number 2253.2 N-Channel Power MOSFET 5V, 3A, 4 mω This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted BSS BSS N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high

More information

Extended V GSS range ( 25V) for battery applications

Extended V GSS range ( 25V) for battery applications Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

More information

FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET

FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET FDS899 Dual N-Channel Logic Level PowerTrench MOSFET V, 6A, 9mΩ Features Max r DS(on) = 9mΩ at V GS = V Max r DS(on) = 36mΩ at V GS =.5V Low gate charge High performance trench technology for extremely

More information

FDPF18N20FT-G N-Channel UniFET TM FRFET MOSFET

FDPF18N20FT-G N-Channel UniFET TM FRFET MOSFET FDPF8N20FT-G N-Channel UniFET TM FRFET MOSFET 200 V, 8 A, 40 m Features R DS(on) = 29 mω (Typ.) @ V GS = 0 V, I D = 9 A Low Gate Charge (Typ. 20 nc) Low C rss (Typ. 24 pf) 00% Avalanche Tested Improve

More information

Applications. Inverter H-Bridge. G1 S1 N-Channel. S1 Dual DPAK 4L

Applications. Inverter H-Bridge. G1 S1 N-Channel. S1 Dual DPAK 4L FDD35H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, 3.9A, mω P-Channel: -V, -9.A, 9mΩ Features Q: N-Channel Max r DS(on) = mω at V GS = V, I D =.3A Max r DS(on) = mω at V GS = V, I D =.A : P-Channel

More information

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

More information

FJP13007 High Voltage Fast-Switching NPN Power Transistor

FJP13007 High Voltage Fast-Switching NPN Power Transistor FJP3007 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

P-Channel PowerTrench MOSFET

P-Channel PowerTrench MOSFET FDD4685-F085 P-Channel PowerTrench MOSFET -40 V, -32 A, 35 mω Features Typical R DS(on) = 23 m at V GS = -10V, I D = -8.4 A Typical R DS(on) = 30 m at V GS = -4.5V, I D = -7 A Typical Q g(tot) = 19 nc

More information

Description. Symbol Parameter FCH041N65EF-F155 Unit V DSS Drain to Source Voltage 650 V

Description. Symbol Parameter FCH041N65EF-F155 Unit V DSS Drain to Source Voltage 650 V FCH04N65EF N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 4 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 36 mω Ultra Low Gate Charge (Typ. Q g = 229 nc) Low Effective Output Capacitance (Typ. C oss(eff.)

More information

FGH75T65SQDNL4. 75 A, 650 V V CEsat = 1.50 V E on = 1.25 mj

FGH75T65SQDNL4. 75 A, 650 V V CEsat = 1.50 V E on = 1.25 mj IGBT - Field Stop IV/ Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching

More information

FDMA3028N. Dual N-Channel PowerTrench MOSFET. FDMA3028N Dual N-Channel PowerTrench MOSFET. 30 V, 3.8 A, 68 mω Features. General Description

FDMA3028N. Dual N-Channel PowerTrench MOSFET. FDMA3028N Dual N-Channel PowerTrench MOSFET. 30 V, 3.8 A, 68 mω Features. General Description FDMA38N Dual N-Channel PowerTrench MOSFET 3 V, 3.8 A, 68 mω Features Max. R DS(on) = 68 mω at V GS =.5 V, I D = 3.8 A Max. R DS(on) = 88 mω at V GS =.5 V, I D = 3. A Max. R DS(on) = 3 mω at V GS =.8 V,

More information

FDN335N N-Channel 2.5V Specified PowerTrench TM MOSFET

FDN335N N-Channel 2.5V Specified PowerTrench TM MOSFET N-Channel.5V Specified PowerTrench TM MOSFET General Description This N-Channel.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

Dual N-Channel, Digital FET

Dual N-Channel, Digital FET FDG6301N-F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R DS(ON) = 4 @ V GS = 4.5 V, R DS(ON) = 5 @ V GS = 2.7 V. Very low level gate drive requirements allowing directoperation

More information

SS13FL, SS14FL. Surface Mount Schottky Barrier Rectifier

SS13FL, SS14FL. Surface Mount Schottky Barrier Rectifier SS13FL, SS14FL Surface Mount Schottky Barrier Rectifier Features Ultra Thin Profile Maximum Height of 1.08 mm UL Flammability 94V 0 Classification MSL 1 Green Mold Compound These Devices are Pb Free, Halogen

More information

FDPC4044. Common Drain N-Channel PowerTrench MOSFET. FDPC4044 Common Drain N-Channel PowerTrench MOSFET. 30 V, 27 A, 4.

FDPC4044. Common Drain N-Channel PowerTrench MOSFET. FDPC4044 Common Drain N-Channel PowerTrench MOSFET. 30 V, 27 A, 4. FDPC444 Common Drain N-Channel PowerTrench MOSFET 3 V, 7 A, 4.3 mω Features Max r SS(on) = 4.3 mω at V GS = V, I SS = 7 A Max r SS(on) = 6.4 mω at V GS = 4.5 V, I SS = 3 A Pakage size/height: 3.3 x 3.3

More information

P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ

P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ FDD4243-F85 P-Channel PowerTrench MOSFET -V, -4A, 64mΩ Features Typ r DS(on) = 36m at V GS = -V, I D = -6.7A Typ r DS(on) = 48m at V GS = -4.5V, I D = -5.5A Typ Q g(tot) = 2nC at V GS = -V High performance

More information

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V36P ISL9V36P3-F8 TO-22AB Tube N/A Electrical Cha

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V36P ISL9V36P3-F8 TO-22AB Tube N/A Electrical Cha ISL9V36P3-F8 EcoSPARK mj, 36V, N-Channel Ignition IGBT General Description The ISL9V36P3_F8 is the next generation IGBT that offer outstanding SCIS capability in the TO-22 plastic package. This device

More information

FDN327N FDN327N. N-Channel 1.8 Vgs Specified PowerTrench MOSFET. Absolute Maximum Ratings

FDN327N FDN327N. N-Channel 1.8 Vgs Specified PowerTrench MOSFET. Absolute Maximum Ratings N-Channel.8 Vgs Specified PowerTrench MOSFET General Description This V N-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.

More information

FCH190N65F-F085 N-Channel SuperFET II FRFET MOSFET

FCH190N65F-F085 N-Channel SuperFET II FRFET MOSFET FCH9N65F-F85 N-Channel SuperFET II FRFET MOSFET 65 V, 2.6 A, 9 mω Features Typical R DS(on) = 48 mω at = V, I D = A Typical Q g(tot) = 63 nc at = V, I D = A UIS Capability Qualified to AEC Q RoHS Compliant

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

S1AFL - S1MFL. Surface General-Purpose Rectifier

S1AFL - S1MFL. Surface General-Purpose Rectifier SAFL - SMFL Surface General-Purpose Rectifier Features Ultra Thin Profile Maximum Height of.08 mm UL Flammability 94V 0 Classification MSL Green Mold Compound These Devices are Pb Free, Halogen Free Free

More information

FDP085N10A N-Channel PowerTrench MOSFET

FDP085N10A N-Channel PowerTrench MOSFET FDP085NA N-Channel PowerTrench MOSFET 0 V, 96 A, 8.5 mω Features R DS(on) = 7.35 mω (Typ.) @ V GS = V, I D = 96 A Fast Switching Speed Low Gate Charge, Q G = 3 nc (Typ.) High Performance Trench Technology

More information

KSC2383 NPN Epitaxial Silicon Transistor

KSC2383 NPN Epitaxial Silicon Transistor KSC2383 NPN Epitaxial Silicon Transistor TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92

More information

QED223 Plastic Infrared Light Emitting Diode

QED223 Plastic Infrared Light Emitting Diode QED223 Plastic Infrared Light Emitting Diode Features λ = 880nm Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched photosensor: QSD123/QSD124 Medium wide emission angle, 30 High output

More information

MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers

MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay

More information

General Description. Applications. Power management Load switch Q2 3 5 Q1

General Description. Applications. Power management Load switch Q2 3 5 Q1 FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ

More information

NXH80B120H2Q0SG. Dual Boost Power Module V, 40 A IGBT with SiC Rectifier

NXH80B120H2Q0SG. Dual Boost Power Module V, 40 A IGBT with SiC Rectifier NXH8B1HQSG Dual Boost Power Module 1 V, 4 A IGBT with SiC Rectifier The NXH8B1HQSG is a power module containing a dual boost stage consisting of two 4 A / 1 V IGBTs, two 15 A / 1 V silicon carbide diodes,

More information

FCH023N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m

FCH023N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 65 V, 75 A, 23 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge

More information

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features

More information

Description TO-3PN. Symbol Parameter FCA76N60N Unit V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V

Description TO-3PN. Symbol Parameter FCA76N60N Unit V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mω Features R DS(on) = 28 mω (Typ. ) @ V GS = 0 V, I D = 38 A Ultra Low Gate Charge (Typ. Q g = 28 nc) Low Effective Output Capacitance (Typ. C oss(eff.)

More information

BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns

BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages

More information

MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers

MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers MURS12T3G Series, SURS812T3G Series Surface Mount Ultrafast Power Rectifiers MURS5T3G, MURS1T3G, MURS115T3G, MURS12T3G, MURS14T3G, MURS16T3G, SURS85T3G, SURS81T3G, SURS8115T3G, SURS812T3G, SURS814T3G,

More information

NXH160T120L2Q2F2SG. Split T-Type NPC Power Module 1200 V, 160 A IGBT, 600 V, 100 A IGBT

NXH160T120L2Q2F2SG. Split T-Type NPC Power Module 1200 V, 160 A IGBT, 600 V, 100 A IGBT NXH6TLQFSG Split T-Type NPC Power Module V, 6 A IGBT, 6 V, A IGBT The NXH6TLQFSG is a power module containing a split T type neutral point clamped three level inverter, consisting of two 6 A / V Half Bridge

More information

Description. Symbol Parameter FCP260N65S3 Unit V DSS Drain to Source Voltage 650 V

Description. Symbol Parameter FCP260N65S3 Unit V DSS Drain to Source Voltage 650 V FCP260N65S3 N-Channel SuperFET III MOSFET 650 V, 2 A, 260 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 222 mω Ultra Low Gate Charge (Typ. Q g = 24 nc) Low Effective Output Capacitance (Typ. C oss(eff.)

More information

NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection

NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to

More information

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G. Q0PACK Module

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G. Q0PACK Module NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G QPACK Module The NXH8T2L2QS2/P2G is a power module containing a T type neutral point clamped (NPC) three level inverter stage. The integrated field stop trench IGBTs and

More information

FDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features

FDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features FDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features R DS(on) = 4.8 mω (Typ.) @ V GS = V, I D = 120 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely

More information

FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET

FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge

More information

MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers

MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.

More information

FDD V P-Channel POWERTRENCH MOSFET

FDD V P-Channel POWERTRENCH MOSFET 3 V P-Channel POWERTRENCH MOSFET General Description This P Channel MOSFET is a rugged gate version of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications

More information

Features -4 A, -30 V. R DS(ON) G 3. = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage -30 V

Features -4 A, -30 V. R DS(ON) G 3. = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage -30 V FC65P Single P-Channel, Logic Level, PowerTrench TM MOSFET General escription This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially

More information

NTP082N65S3F. Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m

NTP082N65S3F. Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance

More information

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need

More information

FDP8D5N10C / FDPF8D5N10C/D

FDP8D5N10C / FDPF8D5N10C/D FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET V, 76 A, 8.5 mω Features Max r DS(on) = 8.5 mω at V GS = V, I D = 76 A Extremely Low Reverse Recovery Charge, Qrr % UIL Tested RoHS Compliant

More information

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features Medium Power Linear Switching Applications Complementary to TIP125 / TIP126 / TIP127 Ordering Information 1 TO-220 1.Base 2.Collector

More information

Features 2.5 A, 30 V. R DS(ON) = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage 30 V

Features 2.5 A, 30 V. R DS(ON) = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage 30 V FC5AN ual N-Channel Logic Level PowerTrench TM MOSFET General escription Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially

More information

MBRA320T3G Surface Mount Schottky Power Rectifier

MBRA320T3G Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction

More information

Features. Symbol Parameter Ratings Units V DSS Drain-Source Voltage -40 V

Features. Symbol Parameter Ratings Units V DSS Drain-Source Voltage -40 V FDS4675-F085 40V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor s advanced Power Tranch process. It has been optimized for power management

More information

IRFM120 N-CHNNEL Electrical Characteristics (T =25% unless otherwise specified) Characteristic Min. Typ. Max. Units Test Condition BS Drain-Source Bre

IRFM120 N-CHNNEL Electrical Characteristics (T =25% unless otherwise specified) Characteristic Min. Typ. Max. Units Test Condition BS Drain-Source Bre dvanced Power MOSFET FETURES IEEE802.3af Compatible! valanche Rugged Technology! Rugged Gate Oxide Technology! Lower Input Capacitance! Improved Gate Charge! Extended Safe Operating rea! Lower Leakage

More information

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

More information

J109 / MMBFJ108 N-Channel Switch

J109 / MMBFJ108 N-Channel Switch J9 / MMBFJ8 N-Channel Switch Features This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from process 8 J9 / MMBFJ8 N-Channel Switch 3 2 TO-92

More information

Features S 1. TA=25 o C unless otherwise noted

Features S 1. TA=25 o C unless otherwise noted FC5P V P-Channel Logic Level PowerTrench MOSFET FC5P General escription This V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.

More information

MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per

More information

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

Is Now Part of. To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need

More information

Description. Symbol Parameter FCMT180N65S3 Unit V DSS Drain to Source Voltage 650 V. - Continuous (T C = 25 o C) 17 - Continuous (T C = 100 o C) 11

Description. Symbol Parameter FCMT180N65S3 Unit V DSS Drain to Source Voltage 650 V. - Continuous (T C = 25 o C) 17 - Continuous (T C = 100 o C) 11 FCMT80N65S3 N-Channel SUPERFET III Easy-Drive MOSFET 650 V, 7 A, 80 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 52 mω Ultra Low Gate Charge (Typ. Q g = 33 nc) Low Effective Output Capacitance (Typ.

More information

N-Channel SuperFET II FRFET MOSFET

N-Channel SuperFET II FRFET MOSFET FCH077N65F N-Channel SuperFET II FRFET MOSFET 650 V, 54 A, 77 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 68 mω Ultra Low Gate Charge (Typ. Q g = 26 nc) Low Effective Output Capacitance (Typ. C oss(eff.)

More information

NGTB15N60EG. IGBT - Short-Circuit Rated. 15 A, 600 V V CEsat = 1.7 V

NGTB15N60EG. IGBT - Short-Circuit Rated. 15 A, 600 V V CEsat = 1.7 V NGTB5N6EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in

More information

NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor NS3N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's

More information

MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS

MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface

More information

MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS

MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS SWITCHMODE Power Rectifier 1 V, 6 A Features and Benefits Low Forward Voltage:.72 V @ 125 C Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature 6 A Total (3 A Per Diode

More information