FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω

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1 FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely low r DS(on) High power and current handling capability in a widely used surface mount package % UIL Tested RoHS Compliant D D Pin D D S G S G General Description This P-channel MOSFET is produced using ON Semiconductor s advanced PowerTrench process that has been optimized for r DS(on), switching performance and ruggedness. Applications Load Switch Synchronous Rectifier D D D D 5 7 Q Q 3 G S G S SO- MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage - V V GS Gate to Source Voltage ± V Drain Current -Continuous -. I D -Pulsed - E AS Single Pulse Avalanche Energy (Note 3) 37 mj Power Dissipation T A = 5 C (Note a) 3. P D Power Dissipation T A = 5 C (Note b). T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics A W R θjc Thermal Resistance, Junction to Case (Note ) R θja Thermal Resistance, Junction to Ambient (Note a) 7 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDS935 FDS935 SO- 3 mm 5 units Semiconductor Components Industries, LLC. October-7, Rev.3 Publication Order Number: FDS935/D

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = -5 μa, V GS = V - V ΔBV DSS Breakdown Voltage Temperature ΔT J Coefficient I D = -5 μa, referenced to 5 C - mv/ C I DSS Zero Gate Voltage Drain Current V DS = - V, V GS = V - μa I GSS Gate to Source Leakage Current V GS = ± V, V DS = V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = -5 μa V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient I D = -5 μa, referenced to 5 C 5 mv/ C V GS = - V, I D = -. A 3 r DS(on) Static Drain to Source On Resistance V GS = -.5 V, I D = -.9 A 7 7 mω V GS = - V, I D = -. A,T J = 5 C 9 3 g FS Forward Transconductance V DS = - V, I D = -. A. S Dynamic Characteristics C iss Input Capacitance 79 pf V DS = - V, V GS = V, C oss Output Capacitance 7 3 pf f = MHz C rss Reverse Transfer Capacitance 3 pf R g Gate Resistance Ω Switching Characteristics t d(on) Turn-On Delay Time 5 ns t r Rise Time V DD = - V, I D = -. A, 3 ns t d(off) Turn-Off Delay Time V GS = - V, R GEN = Ω 3 ns t f Fall Time 3 ns Q g(tot) Total Gate Charge V GS = V to - V 3 9 nc Q g(tot) Total Gate Charge V GS = V to -5 V V DD = - V, 7 nc Q gs Gate to Source Charge I D = -. A. nc Q gd Gate to Drain Miller Charge. nc Drain-Source Diode Characteristics V GS = V, I S = -. A (Note ) V SD Source to Drain Diode Forward Voltage V V GS = V, I S = -.3 A (Note ) t rr Reverse Recovery Time 9 3 ns I F = -. A, di/dt = 3 A/μs Q rr Reverse Recovery Charge 3 5 nc NOTES:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a)7 C/W when mounted on a in pad of oz copper b)35 C/W when mounted on a minimun pad. Pulse Test: Pulse Width < 3μs, Duty cycle <.%. 3. Starting T J = 5 C, L = 3. mh, I AS = -5. A, V DD = -V, V GS = -V.

3 Typical Characteristics T J = 5 C unless otherwise noted -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = - V V GS = -5 V V GS = - V PULSE DURATION = μs Figure. V GS = -3.5 V V GS = -3 V -V DS, DRAIN TO SOURCE VOLTAGE (V) I D = -. A V GS = - V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.5 PULSE DURATION = μs. On-Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On- Resistance vs Junction Temperature rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) Figure. V GS = -3 V V GS = - V -I D, DRAIN CURRENT (A) I D = -. A T J = 5 o C T J = 5 o C V GS = -3.5 V V GS = -5 V V GS = - V PULSE DURATION = μs -V GS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs Gate to Source Voltage -ID, DRAIN CURRENT (A) PULSE DURATION = μs V DS = -5 V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = 5 o C T J = -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Source to Drain Diode Forward Voltage vs Source Current 3

4 Typical Characteristics T J = 5 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) -IAS, AVALANCHE CURRENT (A) I D = -. A Figure V DD = - V V DD = - V Q g, GATE CHARGE (nc) V DD = - V. -V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure. Capacitance vs Drain to Source Voltage T J = 5 o C T J = 5 o C.. t AV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability T J = o C CAPACITANCE (pf) -I D, DRAIN CURRENT (A) f = MHz V GS = V Limited by package R θja = 7 o C/W V GS = -.5 V V GS = - V C iss C oss C rss T A, Ambient TEMPERATURE ( o C) Figure. Maximum Continuous Drain Current vs Ambient Temperature -ID, DRAIN CURRENT (A). THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED R θja = 35 o C/W. T A = 5 o C DC V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area us ms ms ms s s P(PK), PEAK TRANSIENT POWER (W) V GS = - V SINGLE PULSE R θja = 35 o C/W T A = 5 o C t, PULSE WIDTH (s) Figure. Single Pulse Maximum Power Dissipation

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE R θja = 35 o C/W t, RECTANGULAR PULSE DURATION (sec) Figure 3. Junction-to-Ambient Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A 5

6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado USA Phone: or 3 3 Toll Free USA/Canada Fax: or 3 37 Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 955 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

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