FDD8444L-F085 N-Channel PowerTrench MOSFET
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1 M E N FDD8444L-F85 N-Channel PowerTrench MOSFET 4V, 5A, 6.mΩ Features Applications Typ r DS(on) = 3.8mΩ at V GS = 5V, I D = 5A Automotive Engine Control Typ Q g(tot) = 46nC at V GS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Q rr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture and VRMs Qualified to AEC Q11 Primary Switch for 12V and 24V systems RoHS Compliant L E A D F R E E I MP L E TA TIO N 29 Semiconductor Components Industries, LLC. September-217, Rev. 1 Publication Order Number: FDD8444L-F85/D
2 MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 4 V V GS Gate to Source Voltage ±2 V I D Continuous (T amb = 25 o C, V GS = 1V, with R θja = 52 o C/W) 16 Drain Current Continuous (T C < 15 C, V GS = 1V) (Note 1) 5 Pulsed See Figure 4 E AS Single Pulse Avalanche Energy (Note 2) 295 mj P D Power Dissipation 153 W Derate above 25 o C 1.2 W/ o C T J, T STG Operating and Storage Temperature -55 to +175 o C Thermal Characteristics R θjc Thermal Resistance, Junction to Case.98 o C/W R θja Thermal Resistance, Junction to Ambient TO-252, 1in 2 copper pad area 52 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8444L FDD8444L-F85 TO-252AA 13 12mm 25 units Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units A Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 25µA, V GS = V V I DSS Zero Gate Voltage Drain Current On Characteristics Dynamic Characteristics V DS = 32V, V GS = V T J = 15 o C I GSS Gate to Source Leakage Current V GS = ±2V - - ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 25µA V r DS(on) Drain to Source On Resistance I D = 5A, V GS = 1V I D = 5A, V GS = 5V I D = 5A, V GS = 4.5V I D = 5A, V GS = 5V, T J = 175 o C C iss Input Capacitance pf V DS = 25V, V GS = V, C oss Output Capacitance pf f = 1MHz C rss Reverse Transfer Capacitance pf R G Gate Resistance f = 1MHz Ω Q g(tot) Total Gate Charge at 5V V GS = to 5V Q g(th) Threshold Gate Charge V GS = to 2V V DD = 2V nc Q gs Gate to Source Gate Charge I D = 5A nc Q gs2 Gate Charge Threshold to Plateau I g = 1.mA nc µa mω nc Q gd Gate to Drain Miller Charge nc 2
3 Electrical Characteristics T J = 25 o C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t on Turn-On Time ns t d(on) Turn-On Delay Time ns V DD = 2V, I D = 5A t r Turn-On Rise Time ns V GS = 5V, R GS = 2Ω t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time ns t off Turn-Off Time ns Drain-Source Diode Characteristics I SD = 5A V SD Source to Drain Diode Voltage V I SD = 25A t rr Reverse Recovery Time ns I F = 5A, di F /dt = A/µs Q rr Reverse Recovery Charge nc Notes: 1: Package current limitation is 5A. 2: Starting T J = 25 o C, L =.37mH, I AS = 4A. 3
4 Typical Characteristics POWER DISSIPATION MULTIPLIER T C, CASE TEMPERATURE( o C) Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, Z θjc DUTY CYCLE - DESCENDING ORDER D = Figure 2. V GS = 5V V GS = 1V CURRENT LIMITED BY PACKAGE T C, CASE TEMPERATURE( o C) Maximum Continuous Drain Current vs Case Temperature P DM t 1 t 2 NOTES: DUTY FACTOR: D = t 1 /t 2 PEAK T J = P DM x Z θjc x R θjc + T C SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance 1 IDM, PEAK CURRENT (A) 4 V GS = 1V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I T C SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 4
5 Typical Characteristics 1 1 DC V DS, DRAIN TO SOURCE VOLTAGE (V) Figure LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) SINGLE PULSE TJ = MAX RATED TC = 25 o C 1us us 1ms 1ms Forward Bias Safe Operating Area PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V DD = 5V T J = 25 o C T J = -55 o C T J = 175 o C IAS, AVALANCHE CURRENT (A) 5 1 If R = t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1] STARTING T J = 15 o C STARTING T J = 25 o C t AV, TIME IN AVALANCHE (ms) Figure 6. Unclamped Inductive Switching Capability V GS = 1V V GS = 5V V GS = 4V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V GS = 3.5V V GS = 3V V GS, GATE TO SOURCE VOLTAGE (V) V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) I D = 5A PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T J = 175 o C T J = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 8µs DUTY CYCLE =.5% MAX.8 I D = 5A V GS = 1V T J, JUNCTION TEMPERATURE( o C) Figure 1. Normalized Drain to Source On Resistance vs Junction Temperature 5
6 Typical Characteristics NORMALIZED GATE THRESHOLD VOLTAGE T J, JUNCTION TEMPERATURE( o C) Figure 11. CAPACITANCE (pf) V GS = V DS I D = 25µA Normalized Gate Threshold Voltage vs Junction Temperature C rss C oss C iss f = 1MHz V GS = V V DS, DRAIN TO SOURCE VOLTAGE (V) 6 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE I D = 25uA T J, JUNCTION TEMPERATURE ( o C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) ID = 5A V DD = 2V V DD = 15V V DD = 25V Q g, GATE CHARGE(nC) Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage 6
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FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
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More informationFeatures S 1. TA=25 o C unless otherwise noted
FC5P V P-Channel Logic Level PowerTrench MOSFET FC5P General escription This V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
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More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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dvanced Power MOSFET FETURES IEEE802.3af Compatible! valanche Rugged Technology! Rugged Gate Oxide Technology! Lower Input Capacitance! Improved Gate Charge! Extended Safe Operating rea! Lower Leakage
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Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 9 A, 65 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
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Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
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NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
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FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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