FDD8444L-F085 N-Channel PowerTrench MOSFET

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1 M E N FDD8444L-F85 N-Channel PowerTrench MOSFET 4V, 5A, 6.mΩ Features Applications Typ r DS(on) = 3.8mΩ at V GS = 5V, I D = 5A Automotive Engine Control Typ Q g(tot) = 46nC at V GS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Q rr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture and VRMs Qualified to AEC Q11 Primary Switch for 12V and 24V systems RoHS Compliant L E A D F R E E I MP L E TA TIO N 29 Semiconductor Components Industries, LLC. September-217, Rev. 1 Publication Order Number: FDD8444L-F85/D

2 MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 4 V V GS Gate to Source Voltage ±2 V I D Continuous (T amb = 25 o C, V GS = 1V, with R θja = 52 o C/W) 16 Drain Current Continuous (T C < 15 C, V GS = 1V) (Note 1) 5 Pulsed See Figure 4 E AS Single Pulse Avalanche Energy (Note 2) 295 mj P D Power Dissipation 153 W Derate above 25 o C 1.2 W/ o C T J, T STG Operating and Storage Temperature -55 to +175 o C Thermal Characteristics R θjc Thermal Resistance, Junction to Case.98 o C/W R θja Thermal Resistance, Junction to Ambient TO-252, 1in 2 copper pad area 52 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8444L FDD8444L-F85 TO-252AA 13 12mm 25 units Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units A Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 25µA, V GS = V V I DSS Zero Gate Voltage Drain Current On Characteristics Dynamic Characteristics V DS = 32V, V GS = V T J = 15 o C I GSS Gate to Source Leakage Current V GS = ±2V - - ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 25µA V r DS(on) Drain to Source On Resistance I D = 5A, V GS = 1V I D = 5A, V GS = 5V I D = 5A, V GS = 4.5V I D = 5A, V GS = 5V, T J = 175 o C C iss Input Capacitance pf V DS = 25V, V GS = V, C oss Output Capacitance pf f = 1MHz C rss Reverse Transfer Capacitance pf R G Gate Resistance f = 1MHz Ω Q g(tot) Total Gate Charge at 5V V GS = to 5V Q g(th) Threshold Gate Charge V GS = to 2V V DD = 2V nc Q gs Gate to Source Gate Charge I D = 5A nc Q gs2 Gate Charge Threshold to Plateau I g = 1.mA nc µa mω nc Q gd Gate to Drain Miller Charge nc 2

3 Electrical Characteristics T J = 25 o C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t on Turn-On Time ns t d(on) Turn-On Delay Time ns V DD = 2V, I D = 5A t r Turn-On Rise Time ns V GS = 5V, R GS = 2Ω t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time ns t off Turn-Off Time ns Drain-Source Diode Characteristics I SD = 5A V SD Source to Drain Diode Voltage V I SD = 25A t rr Reverse Recovery Time ns I F = 5A, di F /dt = A/µs Q rr Reverse Recovery Charge nc Notes: 1: Package current limitation is 5A. 2: Starting T J = 25 o C, L =.37mH, I AS = 4A. 3

4 Typical Characteristics POWER DISSIPATION MULTIPLIER T C, CASE TEMPERATURE( o C) Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, Z θjc DUTY CYCLE - DESCENDING ORDER D = Figure 2. V GS = 5V V GS = 1V CURRENT LIMITED BY PACKAGE T C, CASE TEMPERATURE( o C) Maximum Continuous Drain Current vs Case Temperature P DM t 1 t 2 NOTES: DUTY FACTOR: D = t 1 /t 2 PEAK T J = P DM x Z θjc x R θjc + T C SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance 1 IDM, PEAK CURRENT (A) 4 V GS = 1V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I T C SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 4

5 Typical Characteristics 1 1 DC V DS, DRAIN TO SOURCE VOLTAGE (V) Figure LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) SINGLE PULSE TJ = MAX RATED TC = 25 o C 1us us 1ms 1ms Forward Bias Safe Operating Area PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V DD = 5V T J = 25 o C T J = -55 o C T J = 175 o C IAS, AVALANCHE CURRENT (A) 5 1 If R = t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1] STARTING T J = 15 o C STARTING T J = 25 o C t AV, TIME IN AVALANCHE (ms) Figure 6. Unclamped Inductive Switching Capability V GS = 1V V GS = 5V V GS = 4V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V GS = 3.5V V GS = 3V V GS, GATE TO SOURCE VOLTAGE (V) V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) I D = 5A PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T J = 175 o C T J = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 8µs DUTY CYCLE =.5% MAX.8 I D = 5A V GS = 1V T J, JUNCTION TEMPERATURE( o C) Figure 1. Normalized Drain to Source On Resistance vs Junction Temperature 5

6 Typical Characteristics NORMALIZED GATE THRESHOLD VOLTAGE T J, JUNCTION TEMPERATURE( o C) Figure 11. CAPACITANCE (pf) V GS = V DS I D = 25µA Normalized Gate Threshold Voltage vs Junction Temperature C rss C oss C iss f = 1MHz V GS = V V DS, DRAIN TO SOURCE VOLTAGE (V) 6 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE I D = 25uA T J, JUNCTION TEMPERATURE ( o C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) ID = 5A V DD = 2V V DD = 15V V DD = 25V Q g, GATE CHARGE(nC) Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage 6

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