FCH023N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m

Transcription

1 Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 65 V, 75 A, 23 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. S R DS(ON) MAX I D MAX 65 V 23 V 75 A D Features 7 T J = 5 C Typ. R DS(on) = 9.5 m Ultra Low Gate Charge (Typ. Q g = 222 nc) Low Effective Output Capacitance (Typ. C oss(eff.) = 98 pf) % Avalanche Tested These Devices are Pb Free and are RoHS Compliant G S POWER MOSFET Applications Telecom / Server Power Supplies Industrial Power Supplies UPS / Solar G D S TO 247 LONG LEADS CASE 34CH MARKING DIAGRAM $Y&Z&3&K FCH 23N65S3 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 27 October, 28 Rev. 5 Publication Order Number: /D

2 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, Unless otherwise noted) Symbol Parameter Value Unit S Drain to Source Voltage 65 V S Gate to Source Voltage DC ±3 V AC (f > Hz) ±3 I D Drain Current Continuous (T C = 25 C) 75 A Continuous (T C = C) 65.8 I DM Drain Current Pulsed (Note ) 3 A E AS Single Pulsed Avalanche Energy (Note 2) 225 mj I AS Avalanche Current (Note 2) 5 A E AR Repetitive Avalanche Energy (Note ) 5.95 mj dv/dt MOSFET dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 2 P D Power Dissipation (T C = 25 C) 595 W Derate Above 25 C 4.76 W/ C T J, T STG Operating and Storage Temperature Range 55 to +5 C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 seconds 3 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Repetitive rating: pulse width limited by maximum junction temperature. 2. I AS = 5 A, R G = 25, starting T J = 25 C. 3. I SD 37.5 A, di/dt 2 A/ s, V DD 4 V, starting T J = 25 C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R JC Thermal Resistance, Junction to Case, Max..2 C/W R JA Thermal Resistance, Junction to Ambient, Max. 4 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity F55 TO 247 G3 Tube N/A N/A 3 Units ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BS Drain to Source Breakdown Voltage =V, I D = ma, T J =25 C 65 V BS / T J Breakdown Voltage Temperature Coefficient =V, I D = ma, T J = 5 C 7 V I D = ma, Referenced to 25 C.72 V/ C I DSS Zero Gate Voltage Drain Current = 65 V, =V A = 52 V, T C = 25 C 6.8 I GSS Gate to Body Leakage Current = ±3 V, =V ± na ON CHARACTERISTICS (th) Gate Threshold Voltage =, I D = 7.5 ma V R DS(on) Static Drain to Source On Resistance =V, I D = 37.5 A m g FS Forward Transconductance =2V, I D = 37.5 A 66 S 2

3 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) (continued) Symbol Parameter Test Conditions DYNAMIC CHARACTERISTICS C iss Input Capacitance = 4 V, = V, f = MHz 76 pf C oss Output Capacitance 95 pf C oss(eff.) Effective Output Capacitance = V to 4 V, =V 98 pf C oss(er.) Energy Related Output Capacitance = V to 4 V, =V 298 pf Q g(tot) Total Gate Charge at V = 4 V, I D = 37.5 A, =V 222 nc Q gs Gate to Source Gate Charge (Note 4) 54 nc Q gd Gate to Drain Miller Charge 9 nc ESR Equivalent Series Resistance f = MHz.9 SWITCHING CHARACTERISTICS t d(on) Turn-On Delay Time V DD = 4 V, I D = 37.5 A, 45 ns t r Turn-On Rise Time =V, R g =2 (Note 4) 55 ns t d(off) Turn-Off Delay Time 4 ns t f Turn-Off Fall Time 29 ns SOURCE-DRAIN DIODE CHARACTERISTICS I S Maximum Continuous Drain to Source Diode Forward Current 75 A I SM Maximum Pulsed Drain to Source Diode Forward Current 3 A V SD Drain to Source Diode Forward Voltage =V, I SD = 37.5 A.2 V t rr Reverse Recovery Time =V, I SD = 37.5 A, 6 ns Q rr Reverse Recovery Charge di F /dt = A/ s 7.9 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. TYPICAL PERFORMANCE CHARACTERISTICS Min. Typ. Max. Unit I D, Drain Current (A) 3 =. V 8. V 7. V 6.5 V 6. V 5.5 V I D, Drain Current (A) 3 5 C 55 C 25 C 25 s Pulse Test T C = 25 C., Drain Source Voltage (V) 2 = 2 V 25 s Pulse Test , Gate Source Voltage (V) 7 Figure. On Region Characteristics Figure 2. Transfer Characteristics 3

4 TYPICAL PERFORMANCE CHARACTERISTICS (continued).4 R DS(ON), Drain Source On Resistance ( ).3.2. = V = 2 V T C = 25 C I D, Drain Current (A) Figure 3. On Resistance Variation vs.drain Current and Gate Voltage I S, Reverse Drain Current (A). 5 C 25 C. = V 25 s Pulse Test V SD, Body Diode Forward Voltage (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitances (pf) C oss C iss C rss = V f = MHz C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd., Drain Source Voltage (V), Gate Source Voltage (V) = 3 V = 4 V I D = 37.5 A Q g, Total Gate Charge (nc) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics BS, Drain Source Breakdown Voltage (Normalized) = V I D = ma T J, Junction Temperature ( C) R DS(on), Drain Source On Resistance (Normalized) = V I D = 37.5 A T J, Junction Temperature ( C) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On Resistance Variation vs. Temperature 4

5 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 5 3 s 8 I D, Drain Current (A) DC ms Operation in this Area is Limited by R DS(on) s ms. T C = 25 C T J = 5 C Single Pulse., Drain Source Voltage (V) I D, Drain Current (A) T C, Case Temperature ( C) Figure 9. Maximum Safe Operating Area Figure. Maximum Drain Current vs. Case Temperature E OSS, ( J) , Drain to Source Voltage (V) Figure. E OSS vs. Drain to Source Voltage r(t), Normalized Effective Transient Thermal Resistance 2. DUTY CYCLE DESCENDING ORDER D = Z JC (t) = r(t) x R JC R JC =.2 C/W Peak T J = P DM x Z JC (t) + T C SINGLE PULSE Duty Cycle, D = t / t t, Rectangular Pulse Duration (sec) Figure 2. Transient Thermal Response Curve P DM t t2 5

6 R L Q g VGS Q gs Q gd I G = Const. DUT Charge Figure 3. Gate Charge Test Circuit & Waveform R L 9% 9% 9% V DD R G DUT % t d(on) t r % t d(off) t f t on t off Figure 4. Resistive Switching Test Circuit & Waveforms L E AS 2 LI 2 AS I D BS I AS R G V DD I D (t) DUT V DD (t) t p t p Time Figure 5. Unclamped Inductive Switching Test Circuit & Waveforms 6

7 DUT + I SD L R G Driver Same Type as DUT V DD dv/dt controlled by R G I SD controlled by pulse period (Driver) Gate Pulse Width D Gate Pulse Period V I FM, Body Diode Forward Current I SD (DUT) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt (DUT) V SD V DD Body Diode Forward Voltage Drop Figure 6. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 7

8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO 247 3LD CASE 34CH ISSUE O DATE 3 OCT 26 DOCUMENT NUMBER: STATUS: NEW STANDARD: Semiconductor Components Industries, LLC, 22 October, 22 Rev. DESCRIPTION: 98AON3853G ON SEMICONDUCTOR STANDARD TO 247 3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. Case Outline Number: PAGE OF XXX 2

9 DOCUMENT NUMBER: 98AON3853G PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM FAIRCHILD TO247G3 TO ON SEMICON- 3 OCT 26 DUCTOR. REQ. BY J. LETTERMAN. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Semiconductor Components Industries, LLC, 26 October, 26 Rev. O Case Outline Number: 34CH

10 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative