N-Channel PowerTrench MOSFET
|
|
- Lizbeth Weaver
- 5 years ago
- Views:
Transcription
1 FDBL86363-F85 N-Channel PowerTrench MOSFET 8 V, 4 A,. mω Features Typical R DS(on) =.5 mω at V GS = V, I D = 8 A Typical Q g(tot) = 3 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for V Systems G D S MOSFET Maximum Ratings T J = 5 C unless otherwise noted. Symbol Parameter Ratings Units V DSS Drain-to-Source Voltage 8 V V GS Gate-to-Source Voltage ± V Drain Current - Continuous (V I GS =) (Note ) T C = 5 C 4 D Pulsed Drain Current T C = 5 C See Figure 4 E AS Single Pulse Avalanche Energy (Note ) 5 mj P D Power Dissipation 357 W Derate Above 5 o C.38 W/ o C T J, T STG Operating and Storage Temperature -55 to + 75 o C R θjc Thermal Resistance, Junction to Case.4 o C/W R θja Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 o C/W A Notes: : Current is limited by silicon. : Starting T J = 5 C, L =.5mH, I AS = 64A, V DD = 8V during inductor charging and V DD = V during time in avalanche. 3: R θja is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design, while R θja is determined by the board design. The maximum rating presented here is based on mounting on a in pad of oz copper. Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDBL86363 FDBL86363-F85 MO-99A Semiconductor Components Industries, LLC. August-7, Rev. Publication Order Number: FDBL86363-F85/D
2 Electrical Characteristics T J = 5 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics B VDSS Drain-to-Source Breakdown Voltage I D = 5μA, V GS = V V I DSS Drain-to-Source Leakage Current On Characteristics Dynamic Characteristics V DS = 8V, T J = 5 o C - - μa V GS = V T J = 75 o C (Note 4) - - ma I GSS Gate-to-Source Leakage Current V GS = ±V - - ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5μA V R DS(on) Drain to Source On Resistance I D = 8A, V GS = V T J = 5 o C -.5. mω T J = 75 o C (Note 4) mω C iss Input Capacitance - - pf V DS = 4V, V GS = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance f = MHz Ω Q g(tot) Total Gate Charge at V V GS = to V V DD = 64V nc Q g(th) Threshold Gate Charge V GS = to V I D = 8A nc Q gs Gate-to-Source Gate Charge nc Q gd Gate-to-Drain Miller Charge nc Switching Characteristics t on Turn-On Time ns t d(on) Turn-On Delay ns t r Rise Time V DD = 4V, I D = 8A, ns t d(off) Turn-Off Delay V GS = V, R GEN = 6Ω ns t f Fall Time ns t off Turn-Off Time ns Drain-Source Diode Characteristics V SD Source-to-Drain Diode Voltage I SD =8A, V GS = V V I SD = 4A, V GS = V - -. V t rr Reverse-Recovery Time I F = 8A, di SD /dt = A/μs, ns Q rr Reverse-Recovery Charge V DD =64V nc Note: 4: The maximum value is specified by design at T J = 75 C. Product is not tested to this condition in production.
3 Typical Characteristics POWER DISSIPATION MULTIPLIER T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC. DUTY CYCLE - DESCENDING ORDER D = SINGLE PULSE ID, DRAIN CURRENT (A) CURRENT LIMITED BY SILICON V GS = V T C, CASE TEMPERATURE( o C) Figure. Maximum Continuous Drain Current vs. Case Temperature P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T C Figure 3. t, RECTANGULAR PULSE DURATION(s) Normalized Maximum Transient Thermal Impedance I DM, PEAK CURRENT (A) V GS = V T C = 5 o C FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 75 - T C 5 SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 3
4 Typical Characteristics ms SINGLE PULSE TJ = MAX RATED ms TC = 5 o C ms.. 5 Figure OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) us Forward Bias Safe Operating Area PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V DD = 5V T J = 5 o C T J = 75 o C T J = -55 o C I AS, AVALANCHE CURRENT (A) If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 5 o C... t AV, TIME IN AVALANCHE (ms) NOTE: Refer to ON Semiconductor Application Notes AN754 and AN755 Figure 6. Unclamped Inductive Switching Capability IS, REVERSE DRAIN CURRENT (A) 4 V GS = V T J = 75 o C T J = 5 o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics V GS 5V Top V 8V 7V 6V 5.5V 5V Bottom 8μs PULSE WIDTH Tj=5 o C V GS 5V Top V 8V 7V 6V 5.5V 5V Bottom 8μs PULSE WIDTH Tj=75 o C Figure 9. Saturation Characteristics Figure. Saturation Characteristics 4
5 Typical Characteristics r DS(on), DRAIN TO SOURCE ON-RESISTANCE (mω) NORMALIZED GATE THRESHOLD VOLTAGE I D = 8A T J = 75 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure. PULSE DURATION = 8μs DUTY CYCLE =.5% MAX T J = 5 o C R DSON vs. Gate Voltage V GS = VDS I D = 5μA T J, JUNCTION TEMPERATURE( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE PULSE DURATION = 8μs DUTY CYCLE =.5% MAX I D = 8A V GS = V T J, JUNCTION TEMPERATURE( o C) Figure. Normalized R DSON vs. Junction Temperature I D = 5mA T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized Gate Threshold Voltage vs. Temperature Figure 4. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss. V GS, GATE TO SOURCE VOLTAGE(V) ID = 8A V DD = 3V 4V 48V Q g, GATE CHARGE(nC) Figure 5. Capacitance vs. Drain to Source Voltage Figure 6. Gate Charge vs. Gate to Source Voltage 5
6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
N-Channel PowerTrench MOSFET
FDBL8636-F85 N-Channel PowerTrench MOSFET 8 V, 3 A,.4 mω Features Typical R DS(on) =. mω at V GS = V, I D = 8 A Typical Q g(tot) = 72 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to
More informationN-Channel PowerTrench MOSFET
FDMS86369-F85 N-Channel PowerTrench MOSFET 8 V, 65 A, 7.5 mω Features Typical R DS(on) = 5.9 mω at V GS = V, I D = 65 A Typical Q g(tot) = 35 nc at V GS = V, I D = 65 A UIS Capability RoHS Compliant Qualified
More informationFDD8444L-F085 N-Channel PowerTrench MOSFET
M E N FDD8444L-F85 N-Channel PowerTrench MOSFET 4V, 5A, 6.mΩ Features Applications Typ r DS(on) = 3.8mΩ at V GS = 5V, I D = 5A Automotive Engine Control Typ Q g(tot) = 46nC at V GS = 5V Powertrain Management
More informationN-Channel Logic Level PowerTrench MOSFET
FDN56N-F85 N-Channel Logic Level PowerTrench MOSFET 6 V,.6 A, 98 mω Features R DS(on) = 98 mω at V GS = 4.5 V, I D =.6 A R DS(on) = 8 mω at V GS = V, I D =.7 A Typ Q g(tot) = 9. nc at V GS = V Low Miller
More informationN-Channel SuperFET MOSFET
FCD5N-F5 N-Channel SuperFET MOSFET V,. A,. Ω Features V,.A, typ. R ds(on) =mω@v GS =V Ultra Low Gate Charge (Typ. Q g = nc) UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive On Board
More informationP-Channel PowerTrench MOSFET -40V, -14A, 64mΩ
FDD4243-F85 P-Channel PowerTrench MOSFET -V, -4A, 64mΩ Features Typ r DS(on) = 36m at V GS = -V, I D = -6.7A Typ r DS(on) = 48m at V GS = -4.5V, I D = -5.5A Typ Q g(tot) = 2nC at V GS = -V High performance
More informationP-Channel PowerTrench MOSFET
FDD4685-F085 P-Channel PowerTrench MOSFET -40 V, -32 A, 35 mω Features Typical R DS(on) = 23 m at V GS = -10V, I D = -8.4 A Typical R DS(on) = 30 m at V GS = -4.5V, I D = -7 A Typical Q g(tot) = 19 nc
More informationFDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ
FDS898 N-Channel PowerTrench MOSFET V, 7A, 3mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
More informationFDS8949 Dual N-Channel Logic Level PowerTrench MOSFET
FDS899 Dual N-Channel Logic Level PowerTrench MOSFET V, 6A, 9mΩ Features Max r DS(on) = 9mΩ at V GS = V Max r DS(on) = 36mΩ at V GS =.5V Low gate charge High performance trench technology for extremely
More informationFDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω
FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationApplications. Inverter H-Bridge. G1 S1 N-Channel. S1 Dual DPAK 4L
FDD35H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, 3.9A, mω P-Channel: -V, -9.A, 9mΩ Features Q: N-Channel Max r DS(on) = mω at V GS = V, I D =.3A Max r DS(on) = mω at V GS = V, I D =.A : P-Channel
More informationFCH190N65F-F085 N-Channel SuperFET II FRFET MOSFET
FCH9N65F-F85 N-Channel SuperFET II FRFET MOSFET 65 V, 2.6 A, 9 mω Features Typical R DS(on) = 48 mω at = V, I D = A Typical Q g(tot) = 63 nc at = V, I D = A UIS Capability Qualified to AEC Q RoHS Compliant
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFDMA3028N. Dual N-Channel PowerTrench MOSFET. FDMA3028N Dual N-Channel PowerTrench MOSFET. 30 V, 3.8 A, 68 mω Features. General Description
FDMA38N Dual N-Channel PowerTrench MOSFET 3 V, 3.8 A, 68 mω Features Max. R DS(on) = 68 mω at V GS =.5 V, I D = 3.8 A Max. R DS(on) = 88 mω at V GS =.5 V, I D = 3. A Max. R DS(on) = 3 mω at V GS =.8 V,
More informationBottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
D D D FDMS7658AS N-Channel PowerTrench SyncFET TM 3 V, 76 A,.9 mω Features Max r DS(on) =.9 mω at V GS = V, I D = 8 A Max r DS(on) =. mω at V GS = 7 V, I D = 6 A Advanced Package and Silicon Combination
More informationFeatures D G. T A =25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1a) 3.8. (Note 1b) 1.6
FDD564P 6V P-Channel PowerTrench MOSFET FDD564P General Description This 6V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
More informationPUBLICATION ORDERING INFORMATION. Semiconductor Components Industries, LLC
FDS39 FDS39 V N-Channel Dual PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
More informationDual N-Channel, Digital FET
FDG6301N-F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R DS(ON) = 4 @ V GS = 4.5 V, R DS(ON) = 5 @ V GS = 2.7 V. Very low level gate drive requirements allowing directoperation
More informationFDN327N FDN327N. N-Channel 1.8 Vgs Specified PowerTrench MOSFET. Absolute Maximum Ratings
N-Channel.8 Vgs Specified PowerTrench MOSFET General Description This V N-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
More informationNTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features
NTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 23 mω Ultra Low Gate Charge (Typ. Q g = 259 nc) Low Effective Output Capacitance (Typ.
More informationDevice Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT mm 12mm 4000
FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
More informationFDP8D5N10C / FDPF8D5N10C/D
FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET V, 76 A, 8.5 mω Features Max r DS(on) = 8.5 mω at V GS = V, I D = 76 A Extremely Low Reverse Recovery Charge, Qrr % UIL Tested RoHS Compliant
More informationFeatures. TA=25 o C unless otherwise noted
NDS6 NDS6 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationElectrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre
FQD8P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
More informationExtended V GSS range ( 25V) for battery applications
Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
More informationDescription. Symbol Parameter FCH041N65EF-F155 Unit V DSS Drain to Source Voltage 650 V
FCH04N65EF N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 4 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 36 mω Ultra Low Gate Charge (Typ. Q g = 229 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationN-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
BSS BSS N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high
More informationFDPF18N20FT-G N-Channel UniFET TM FRFET MOSFET
FDPF8N20FT-G N-Channel UniFET TM FRFET MOSFET 200 V, 8 A, 40 m Features R DS(on) = 29 mω (Typ.) @ V GS = 0 V, I D = 9 A Low Gate Charge (Typ. 20 nc) Low C rss (Typ. 24 pf) 00% Avalanche Tested Improve
More informationAbsolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1)
Data Sheet September 213 File Number 2253.2 N-Channel Power MOSFET 5V, 3A, 4 mω This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
More informationFDN335N N-Channel 2.5V Specified PowerTrench TM MOSFET
N-Channel.5V Specified PowerTrench TM MOSFET General Description This N-Channel.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to
More informationFDPC4044. Common Drain N-Channel PowerTrench MOSFET. FDPC4044 Common Drain N-Channel PowerTrench MOSFET. 30 V, 27 A, 4.
FDPC444 Common Drain N-Channel PowerTrench MOSFET 3 V, 7 A, 4.3 mω Features Max r SS(on) = 4.3 mω at V GS = V, I SS = 7 A Max r SS(on) = 6.4 mω at V GS = 4.5 V, I SS = 3 A Pakage size/height: 3.3 x 3.3
More informationDescription. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 500 V V GSS Gate to Source Voltage ±30 V
FDD5N50FTM-WS N-Channel UniFET TM FRFET MOSFET 500 V, 3.5 A,.55 Ω Features R DS(on) =.25Ω (Typ.) @ V GS = 0 V, I D =.75 A Low Gate Charge (Typ. nc) Low C rss (Typ. 5 pf) Fast Switching 00% Avalanche Tested
More informationFDP085N10A N-Channel PowerTrench MOSFET
FDP085NA N-Channel PowerTrench MOSFET 0 V, 96 A, 8.5 mω Features R DS(on) = 7.35 mω (Typ.) @ V GS = V, I D = 96 A Fast Switching Speed Low Gate Charge, Q G = 3 nc (Typ.) High Performance Trench Technology
More informationFeatures. Symbol Parameter Ratings Units V DSS Drain-Source Voltage -40 V
FDS4675-F085 40V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor s advanced Power Tranch process. It has been optimized for power management
More informationFDD V P-Channel POWERTRENCH MOSFET
3 V P-Channel POWERTRENCH MOSFET General Description This P Channel MOSFET is a rugged gate version of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationDescription TO-3PN. Symbol Parameter FCA76N60N Unit V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V
FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mω Features R DS(on) = 28 mω (Typ. ) @ V GS = 0 V, I D = 38 A Ultra Low Gate Charge (Typ. Q g = 28 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationFDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features
FDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features R DS(on) = 4.8 mω (Typ.) @ V GS = V, I D = 120 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely
More informationDescription. Symbol Parameter FCMT180N65S3 Unit V DSS Drain to Source Voltage 650 V. - Continuous (T C = 25 o C) 17 - Continuous (T C = 100 o C) 11
FCMT80N65S3 N-Channel SUPERFET III Easy-Drive MOSFET 650 V, 7 A, 80 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 52 mω Ultra Low Gate Charge (Typ. Q g = 33 nc) Low Effective Output Capacitance (Typ.
More informationElerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakd
FQD3P50 P-Channel QFET MOSFET - 500 V, -.1 A, 4.9 Ω Description This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
More informationDescription. Symbol Parameter FCP260N65S3 Unit V DSS Drain to Source Voltage 650 V
FCP260N65S3 N-Channel SuperFET III MOSFET 650 V, 2 A, 260 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 222 mω Ultra Low Gate Charge (Typ. Q g = 24 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationDescription. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C
FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V,.8 A,.5 Ω Features.8 A, 600 V, R DS(on) =.5 Ω (Max.) @ = 10 V, = 1.4 A Low Gate Charge ( Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested RoHS compliant
More informationFDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET
FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationNCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
More informationN-Channel SuperFET II FRFET MOSFET
FCH077N65F N-Channel SuperFET II FRFET MOSFET 650 V, 54 A, 77 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 68 mω Ultra Low Gate Charge (Typ. Q g = 26 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationSept 2017 FCA47N60F N-Channel SuperFET FRFET MOSFET. Description TO-3PN
FCA47N60F N-Channel SuperFET FRFET MOSFET 600 V, 47 A, 73 mω Features 650 V @ T J = 150 C Typ. R DS(on) = 62 mω Fast Recovery Time (Typ. T rr = 240 ns) Ultra Low Gate Charge (Typ. Q g = 210 nc) Low Effective
More informationFDH50N50 / FDA50N50 N-Channel UniFET TM MOSFET 500 V, 48 A, 105 mω Features
FDH5N5 / FDA5N5 N-Channel UniFET TM MOSFET 5 V, 48 A, 15 mω Features R DS(on) = 89 mω (Typ.) @ = 1 V, = 24 A Low Gate Charge (Typ. 15 nc) Low C rss (Typ. 45 pf) 1% Avalanche Tested Improved dv/dt Capability
More informationFCH023N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 65 V, 75 A, 23 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
More informationGeneral Description. Applications. Power management Load switch Q2 3 5 Q1
FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
More informationFDS6986AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET
FDS9AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description The FDS9AS is designed to replace two single SO- MOSFETs and Schottky diode in synchronous DC:DC power supplies that
More informationFGH40N60SFDTU-F V, 40 A Field Stop IGBT
FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFeatures S 1. TA=25 o C unless otherwise noted
FC5P V P-Channel Logic Level PowerTrench MOSFET FC5P General escription This V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
More informationFCMT099N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 30 A, 99 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 30 A, 99 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
More informationFGH12040WD 1200 V, 40 A Field Stop Trench IGBT
FGH12040WD 1200 V, 40 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J = 175 o C Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: V CE(sat) = 2.3
More informationNTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
More information650V, 40A Field Stop Trench IGBT
FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs
More informationNTP082N65S3F. Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m
Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
More informationFGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFCD360N65S3R0. N Channel SUPERFET III Easy-Drive MOSFET. 650 V, 10 A, 360 m
N Channel SUPERFET III Easy-Drive MOSFET 650 V, 0 A, 360 m Description SuperFET III MOSFET is ON Semiconductor s brand new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance
More informationNTHL040N65S3F. Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 65 A, 40 m
Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 65 A, 40 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
More informationPackage Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V36P ISL9V36P3-F8 TO-22AB Tube N/A Electrical Cha
ISL9V36P3-F8 EcoSPARK mj, 36V, N-Channel Ignition IGBT General Description The ISL9V36P3_F8 is the next generation IGBT that offer outstanding SCIS capability in the TO-22 plastic package. This device
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationFeatures 2.5 A, 30 V. R DS(ON) = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage 30 V
FC5AN ual N-Channel Logic Level PowerTrench TM MOSFET General escription Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFeatures -4 A, -30 V. R DS(ON) G 3. = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage -30 V
FC65P Single P-Channel, Logic Level, PowerTrench TM MOSFET General escription This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially
More informationNTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
More informationNVC6S5A444NLZ. Power MOSFET. 60 V, 78 m, 4.5 A, N Channel
Power MOSFET 6 V, 78 m,.5 A, N Channel Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC Q qualified MOSFET and PPAP capable suitable for automotive applications. Features.5
More informationIRFM120 N-CHNNEL Electrical Characteristics (T =25% unless otherwise specified) Characteristic Min. Typ. Max. Units Test Condition BS Drain-Source Bre
dvanced Power MOSFET FETURES IEEE802.3af Compatible! valanche Rugged Technology! Rugged Gate Oxide Technology! Lower Input Capacitance! Improved Gate Charge! Extended Safe Operating rea! Lower Leakage
More informationFGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage:
More informationRURD660S9A-F085 Ultrafast Power Rectifier, 6A 600V
RURD66S9AF85 Ultrafast Power Rectifier, 6A 6V Features High Speed Switching ( t rr =63ns(Typ.) @ =6A ) Low Forward Voltage( V F =.26V(Typ.) @ =6A ) Avalanche Energy Rated AECQ Qualified Applications General
More informationPacking Method. Symbol Parameter Test Conditions Min. Typ. Max. Unit V CE(sat) Saturation Voltage V C = 25 A, V GE = 15 V,
FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj
More informationNVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
More informationNVMFD5C478NL. Power MOSFET. 40 V, 14.5 m, 29 A, Dual N Channel
NVMFDC478NL Power MOSFET 4 V, 4. m, 29 A, Dual N Channel Features Small Footprint ( x 6 mm) for Compact Design Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFDC478NLWF
More informationFCPF165N65S3L1. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 19 A, 165 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 9 A, 65 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
More informationNTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
More informationNVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
More informationNDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NS3N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's
More informationRURP1560-F085 15A, 600V Ultrafast Rectifier
RURP56F85 5A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =52ns(Typ.) @ I F =5A ) Low Forward Voltage( V F =.5V(Max.) @ I F =5A ) Avalanche Energy Rated AECQ Qualified Applications Automotive
More informationNTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
More informationNTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
More informationJ109 / MMBFJ108 N-Channel Switch
J9 / MMBFJ8 N-Channel Switch Features This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from process 8 J9 / MMBFJ8 N-Channel Switch 3 2 TO-92
More informationNTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
More informationNVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
More informationNVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
More informationRURG8060-F085 80A, 600V Ultrafast Rectifier
RURG86F85 8A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =74ns(Typ.) @ I F =8A ) Low Forward Voltage( V F =.34V(Typ.) @ I F =8A ) Avalanche Energy Rated AECQ Qaulified Applications Automotive
More informationNTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
More informationNTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationFFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description.
FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationPIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
More information