NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G. Q0PACK Module
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1 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G QPACK Module The NXH8T2L2QS2/P2G is a power module containing a T type neutral point clamped (NPC) three level inverter stage. The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features Low Switching Loss Low V CESAT Compact 65.9 mm x 32.5 mm x 2 mm Package Thermistor Options with pre applied thermal interface material (TIM) and without pre applied TIM Options with solderable pins and press fit pins Typical Applications Solar Inverter Uninterruptable Power Supplies 5,6 QPACK CASE 8AA PRESS FIT PINS MARKING DIAGRAMS NXH8T2L2QP2G ATYYWW QPACK CASE 8AB SOLDERABLE PINS 5,4 3,4 Half Bridge IGBTs & Diodes 2V/8A 7 T 8 D2 D3 T2 T Neutral Point IGBTs & Diodes 6V/5A 2 T4 Figure. Schematic Diagram D 8,9,, D4 9 2 NTC NXH8T2L2QS2G ATYYWW NXH8T2L2QS2G = Specific Device Code G = Pb free Package A = Assembly Site Code T = Test Site Code YYWW = Year and Work Week Code PIN ASSIGNMENTS ORDERING INFORMATION See detailed ordering and shipping information in the dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 27 August, 28 Rev. 3 Publication Order Number: NXH8T2L2QS2G/D
2 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G Table. MAXIMUM RATINGS Rating Symbol Value Unit HALF BRIDGE IGBT Collector Emitter Voltage V CES 2 V Gate Emitter Voltage V GE ±2 V Continuous Collector T h = 8 C (T J = 75 C) I C 67 A Pulsed Collector Current (T J = 75 C) I Cpulse 2 A Maximum Power T h = 8 C (T J = 75 C) P tot 58 W Short Circuit Withstand V GE = 5 V, V CE = 6 V, T J 5 C T sc 5 s Minimum Operating Junction Temperature T JMIN 4 C Maximum Operating Junction Temperature T JMAX 5 C NEUTRAL POINT IGBT Collector Emitter Voltage V CES 65 V Gate Emitter Voltage V GE ±2 V Continuous Collector T h = 8 C (T J = 75 C) I C 49 A Pulsed Collector Current (T J = 75 C) I Cpulse 47 A Maximum Power T h = 8 C (T J = 75 C) P tot 86 W Short Circuit Withstand V GE = 5 V, V CE = 4 V, T J 5 C T sc 5 s Minimum Operating Junction Temperature T JMIN 4 C Maximum Operating Junction Temperature T JMAX 5 C HALF BRIDGE DIODE Peak Repetitive Reverse Voltage V RRM 2 V Continuous Forward T h = 8 C (T J = 75 C) I F 28 A Repetitive Peak Forward Current (T J = 75 C, t p limited by T Jmax ) I FRM 84 A Maximum Power T h = 8 C (T J = 75 C) P tot 73 W Minimum Operating Junction Temperature T JMIN 4 C Maximum Operating Junction Temperature T JMAX 5 C NEUTRAL POINT DIODE Peak Repetitive Reverse Voltage V RRM 65 V Continuous Forward T h = 8 C (T J = 75 C) I F 33 A Repetitive Peak Forward Current (T J = 75 C, t p limited by T Jmax ) I FRM 99 A Maximum Power T h = 8 C (T J = 75 C) P tot 63 W Minimum Operating Junction Temperature T JMIN 4 C Maximum Operating Junction Temperature T JMAX 5 C THERMAL PROPERTIES Storage Temperature range T stg 4 to 25 C INSULATION PROPERTIES Isolation test voltage, t = sec, 6 Hz V is 3 V RMS Creepage distance 2.7 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. Table 2. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit Module Operating Junction Temperature T J 4 5 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 2
3 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G Table 3. ELECTRICAL CHARACTERISTICS T J = 25 C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit HALF BRIDGE IGBT CHARACTERISTICS Collector Emitter Cutoff Current V GE = V, V CE = 2 V I CES 3 A Collector Emitter Saturation Voltage V GE = 5 V, I C = 8 A, T J = 25 C V CE(sat) V V GE = 5 V, I C = 8 A, T J = 5 C 2. Gate Emitter Threshold Voltage V GE = V CE, I C =.5 ma V GE(TH) V Gate Leakage Current V GE = 2 V, V CE = V I GES 3 na Turn on Delay Time T J = 25 C t d(on) 6 ns Rise Time V CE = 35 V, I C = 6 A t r 28 Turn off Delay Time V GE = ±5V, R G = 4.7 t d(off) 25 Fall Time t f 4 Turn on Switching Loss per Pulse E on 55 J Turn off Switching Loss per Pulse E off Turn on Delay Time T J = 25 C t d(on) 58 ns Rise Time V CE = 35 V, I C = 6 A t r 3 Turn off Delay Time V GE = ±5 V, R G = 4.7 t d(off) 23 Fall Time t f 63 Turn on Switching Loss per Pulse E on 72 J Turn off Switching Loss per Pulse E off 7 Input Capacitance V CE = 2 V, V GE = V, f = khz C ies 94 pf Output Capacitance C oes 4 Reverse Transfer Capacitance C res 34 Total Gate Charge V CE = 6 V, I C = 8 A, V GE = +5 V Q g 8 nc Thermal Resistance chip to heatsink Thermal grease, Thickness = 76 m ±2%, = 2.9 W/mK R thjh.6 C/W NEUTRAL POINT DIODE CHARACTERISTICS Diode Forward Voltage I F = 6 A, T J = 25 C V F V I F = 6 A, T J = 5 C.6 Reverse Recovery Time T J = 25 C t rr 39 ns Reverse Recovery Charge V CE = 35 V, I C = 6 A Q rr. C Peak Reverse Recovery Current V GE = ±5 V, R G = 4.7 I RRM 48 A Peak Rate of Fall of Recovery Current di/dt 34 A/ s Reverse Recovery Energy E rr 4 J Reverse Recovery Time T J = 25 C t rr 78 ns Reverse Recovery Charge V CE = 35 V, I C = 6 A Q rr 2. C Peak Reverse Recovery Current V GE = ±5 V, R G = 4.7 I RRM 59 A Peak Rate of Fall of Recovery Current di/dt 6 A/ s Reverse Recovery Energy E rr 55 J Thermal Resistance chip to heatsink Thermal grease, Thickness = 76 m ±2%, = 2.9 W/mK R thjh.5 C/W NEUTRAL POINT IGBT CHARACTERISTICS Collector Emitter Cutoff Current V GE = V, V CE = 6 V I CES 2 A Collector Emitter Saturation Voltage V GE = 5 V, I C = 5 A, T J = 25 C V CE(sat).4.75 V V GE = 5 V, I C = 5 A, T J = 5 C.5 Gate Emitter Threshold Voltage V GE = V CE, I C =.2 ma V GE(TH) V Gate Leakage Current V GE = 2 V, V CE = V I GES 2 na 3
4 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G Table 3. ELECTRICAL CHARACTERISTICS T J = 25 C unless otherwise noted Parameter Test Conditions Symbol NEUTRAL POINT IGBT CHARACTERISTICS Turn on Delay Time T J = 25 C t d(on) 3 ns Rise Time V CE = 35 V, I C = 6 A V GE = ±5 V, R G = 4.7 t r 9 Turn off Delay Time t d(off) Fall Time t f 23 Turn on Switching Loss per Pulse E on 8 J Turn off Switching Loss per Pulse E off 48 Turn on Delay Time T J = 25 C t d(on) 32 ns Rise Time V CE = 35 V, I C = 6 A V GE = ±5 V, R G = 4.7 t r 8 Turn off Delay Time t d(off) 2 Fall Time t f 35 Turn on Switching Loss per Pulse E on J Turn off Switching Loss per Pulse E off 88 Input Capacitance V CE = 2 V, V GE = V, f = khz C ies 94 pf Output Capacitance C oes 28 Reverse Transfer Capacitance C res 25 Total Gate Charge V CE = 48 V, I C = 5 A, V GE = +5 V Q g 395 nc Thermal Resistance chip to heatsink Thermal grease, Thickness = 76 m ±2%, = 2.9 W/mK Min Typ Max Unit R thjh. C/W HALF BRIDGE DIODE CHARACTERISTICS Diode Forward Voltage I F = 4 A, T J = 25 C V F V I F = 4 A, T J = 5 C.5 Reverse recovery time T J = 25 C t rr 45 ns Reverse recovery charge V CE = 35 V, I C = 6 A Q rr 2.7 C Peak reverse recovery current V GE = ±5 V, R G = 4.7 I RRM A Peak rate of fall of recovery current di/dt 7 A/ s Reverse recovery energy E rr J Reverse recovery time T J = 25 C t rr 85 ns Reverse recovery charge V CE = 35 V, I C = 6 A Q rr 6 C Peak reverse recovery current V GE = ±5 V, R G = 4.7 I RRM 5 A Peak rate of fall of recovery current di/dt 59 A/ s Reverse recovery energy E rr 9 J Thermal Resistance chip to heatsink Thermal grease, Thickness = 76 m ±2%, = 2.9 W/mK R thjh.3 C/W THERMISTOR CHARACTERISTICS Nominal resistance T = 25 C R k Nominal resistance T = C R 486 Deviation of R25 R/R 5 5 % Power dissipation P D 2 mw Power dissipation constant 2 mw/k B value B(25/5), tolerance ±3% 395 K B value B(25/), tolerance ±3% 3998 K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4
5 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G TYPICAL CHARACTERISTICS Half Bridge IGBT and Neutral Point Diode I C, COLLECTOR CURRENT (A) T J = 25 C V GE = 2 V to 3 V 7 V V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 2. Typical Output Characteristics V V 9 V 8 V I C, COLLECTOR CURRENT (A) T J = 5 C V GE = 2 V to 3 V V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 3. Typical Output Characteristics V V 9 V 8 V 7 V 5 8 I C, COLLECTOR CURRENT (A) T J = 5 C T J = 25 C I F, FORWARD CURRENT T J = 5 C T J = 25 C V GE, GATE EMITTER VOLTAGE (V) V F, FORWARD VOLTAGE (V) Figure 4. Typical Transfer Characteristics Figure 5. Diode Forward Characteristics Figure 6. Typical Turn On Loss vs. IC Figure 7. Typical Turn Off Loss vs. IC 5
6 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G TYPICAL CHARACTERISTICS Half Bridge IGBT and Neutral Point Diode Figure 8. Typical On Switching Times vs. IC Figure 9. Typical Off Switching Times vs. IC Figure. Typical On Rise Times vs. IC Figure. Typical Off Fall Times vs. IC Figure 2. Typical Reverse Recovery Time vs. IC Figure 3. Typical Reverse Recovery Charge vs. IC 6
7 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G TYPICAL CHARACTERISTICS Half Bridge IGBT and Neutral Point Diode Figure 4. Typical Reverse Recovery Peak Current vs. IC Figure 5. Typical Diode Current Slope vs. IC 6 4 V GE, GATE VOLTAGE (V) V CE = 6 V I C = 8 A 8 Q G, GATE CHARGE (nc) Figure 6. Typical Reverse Recovery Energy vs. IC Figure 7. Gate Voltage vs. Gate Charge 7
8 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G TYPICAL CHARACTERISTICS Half Bridge IGBT and Neutral Point Diode DUTY CYCLE PEAK RESPONSE ( C/W).... 5% 2% % 5% 2% % Single Pulse.... PULSE ON TIME (s) Figure 8. IGBT Transient Thermal Impedance DUTY CYCLE PEAK RESPONSE ( C/W)... 5% 2% % 5% 2% % Single Pulse.... PULSE ON TIME (s) Figure 9. Diode Transient Thermal Impedance 8
9 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G I C, COLLECTOR CURRENT (A) T J = 25 C TYPICAL CHARACTERISTICS Neutral Point IGBT and Half Bridge Diode V GE = 2 V to 5 V 7 V 9 V 5 7 V 8 V V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 2. Typical Output Characteristics 3 V V V I C, COLLECTOR CURRENT (A) T J = 5 C V GE = 2 V to 7 V V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 2. Typical Output Characteristics 5 V 3 V V V 9 V 8 V 5 8 I C, COLLECTOR CURRENT (A) T J = 5 C T J = 25 C I F, FORWARD CURRENT T J = 5 C T J = 25 C V GE, GATE EMITTER VOLTAGE (V) V F, FORWARD VOLTAGE (V) Figure 22. Typical Transfer Characteristics Figure 23. Diode Forward Characteristics Figure 24. Typical Turn On Loss vs. IC Figure 25. Typical Turn Off Loss vs. IC 9
10 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G TYPICAL CHARACTERISTICS Neutral Point IGBT and Half Bridge Diode Figure 26. Typical On Switching Times vs. IC Figure 27. Typical Off Switching Times vs. IC Figure 28. Typical On Rise Times vs. IC Figure 29. Typical Off Fall Times vs. IC Figure 3. Typical Reverse Recovery Time vs. IC Figure 3. Typical Reverse Recovery Charge vs. IC
11 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G TYPICAL CHARACTERISTICS Neutral Point IGBT and Half Bridge Diode Figure 32. Typical Reverse Recovery Peak Current vs. IC Figure 33. Typical Diode Current Slope vs. IC 6 4 V GE, GATE VOLTAGE (V) V CE = 48 V I C = 5 A 8 Q G, GATE CHARGE (nc) Figure 34. Typical Reverse Recovery Energy vs. IC Figure 35. Gate Voltage vs. Gate Charge
12 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G TYPICAL CHARACTERISTICS Neutral Point IGBT and Half Bridge Diode DUTY CYCLE PEAK RESPONSE ( C/W).... 5% 2% % 5% 2% % Single Pulse.... PULSE ON TIME (s) Figure 36. IGBT Transient Thermal Impedance DUTY CYCLE PEAK RESPONSE ( C/W)... 5% 2% % 5% 2% % Single Pulse.... PULSE ON TIME (s) Figure 37. Diode Transient Thermal Impedance 2
13 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G TYPICAL CHARACTERISTICS Thermistor 24K 2K RESISTANCE ( ) 6K 2K 8K 4K TEMPERATURE ( C) Figure 38. Thermistor Characteristics 25 ORDERING INFORMATION Orderable Part Number Marking Package Shipping NXH8T2L2QP2G NXH8T2L2QP2G QPACK Case 8AA (Pb Free and Halide Free) 24 Units / Blister Tray NXH8T2L2QS2G NXH8T2L2QS2G QPACK Case 8AB (Pb Free and Halide Free) NXH8T2L2QS2TG NXH8T2L2QS2TG QPACK Case 8AB with pre applied thermal interface material (TIM) (Pb Free and Halide Free) 24 Units / Blister Tray 24 Units / Blister Tray 3
14 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G PACKAGE DIMENSIONS PIM2, 55x32.5 / QPACK CASE 8AA ISSUE D 4
15 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G PACKAGE DIMENSIONS PIM2, 55x32.5 / QPACK CASE 8AB ISSUE D 5
16 NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G PACKAGE DIMENSIONS PIM2, 55x32.5 / QPACK CASE 8AB ISSUE D ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NXH8T2L2QS2G/D
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