NSVF5501SK RF Transistor for Low Noise Amplifier

Transcription

1 RF Transistor for Low Noise Amplifier 10 V, 70 ma, f T =. GHz typ. RF Transistor This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because it is small surface mount package. This RF transistor is AEC Q101 qualified and PPAP capable for automotive applications. Features High Cut off Frequency: f T =. GHz typ. (V CE = V) High Gain: S1e = 11 db typ. (f = 1 GHz) S1e = 19 db typ. (f = 400 MHz) SSFP Package is Pin compatible with SOT 6 AEC Q101 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 1 SOT 6 / SSFP CASE 61AC ELECTRICAL CONNECTION NPN Typical Applications RF Amplifier for RKE RF Amplifier for ADAS RF Amplifier for Remote Engine Starter 1 1 : Base : Emitter : Collector MARKING DIAGRAM LOT No. ZD LOT No. ZD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 018 July, 018 Rev. 0 1 Publication Order Number: NSVF01SK/D

2 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = C Parameter Symbol Value Unit Collector to Base Voltage V CBO 0 V Collector to Emitter Voltage V CEO 10 V Emitter to Base Voltage V EBO V Collector Current I C 70 ma Collector Dissipation P C 0 mw Operating Junction and Storage Temperature Tj, Tstg to +10 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS at Ta = C Parameter Symbol Conditions Value Min Typ Max Collector Cutoff Current I CBO V CB = 10 V, I E = 0 A 0.1 A Emitter Cutoff Current I EBO V EB = V, I C = 0 A 1 A DC Current Gain h FE V CE = V, I C = 10 ma Gain Bandwidth Product f T 1 V CE = V, I C = ma.0 4. GHz f T V CE = V, I C = 0 ma. GHz Output Capacitance Cob V CB = 10 V, f = 1 MHz pf Reverse Transfer Capacitance Cre 0.6 pf Forward Transfer Gain S1e 1 V CE = V, I C = 0 ma, f = 1 GHz 8 11 db S1e V CE = V, I C = 0 ma, f = 400 MHz db Noise Figure NF V CE = V, I C = ma, f = 1 GHz Z S = Z L = 0 Unit 1.9 db Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pay attention to handling since it is liable to be affected by static electricity due to the high frequency process adopted.

3 TYPICAL CHARACTERISTICS 0 4 IC VCE 0.0mA IC VBE V CE =V Collector Current, I C ma 40 0.mA 0 0.0mA 0.1mA mA mA 0 IB=0mA Collector to Emitter Voltage, VCE V Collector Current, IC ma Base to Emitter Voltage, VBE V Figure 1. Figure. DC Current Gain, h FE hfe IC VCE=V Gain Bandwidth Product, ft GHz 10 7 ft IC VCE=V Collector Current, I C ma Collector Current, I C ma Figure. Figure 4. Output Capacitance, Cob pf Cob VCB f=1mhz Collector to Base Voltage, VCB V Collector to Base Voltage, VCB V Figure. Figure 6. Reverse Transfer Capacitance, Cre pf Cre VCB f=1mhz

4 TYPICAL CHARACTERISTICS.0 NF IC V CE = V f = 1 GHz Z O =0 db 14 1 S1e I C Noise Figure, NF db Forward Transfer Gain, S1e Collector Current, I C ma VCE= V f = 1 GHz Collector Current, IC ma Figure 7. Figure 8. db Forward Transfer Gain, S1e S1e I C VCE= V f = 400MHz Collector Dissipation, PC mw PC Ta Collector Current, IC ma Figure Ambient Temperature, Ta C Figure 10. 4

5 S PARAMETERS (COMMON EMITTER) Freq(MHz) S11 S11 S1 S1 S1 S1 S S V CE = V, I C = 1 ma, Z O = V CE = V, I C = ma, Z O =

6 S PARAMETERS (COMMON EMITTER) Freq(MHz) S11 S11 S1 S1 S1 S1 S S V CE = V, I C = ma, Z O = V CE = V, I C = 10 ma, Z O =

7 S PARAMETERS (COMMON EMITTER) Freq(MHz) S11 S11 S1 S1 S1 S1 S S V CE = V, I C = 1 ma, Z O = V CE = V, I C = 0 ma, Z O =

8 S PARAMETERS (COMMON EMITTER) Freq(MHz) S11 S11 S1 S1 S1 S1 S S V CE = V, I C = 0 ma, Z O = V CE = V, I C = 0 ma, Z O = ORDERING INFORMATION Device Marking Package Shipping NSVF01SKTG ZD SOT 6 / SSFP (Pb Free / Halogen Free) 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D 8

9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT 6 / SSFP CASE 61AC ISSUE O DATE 9 FEB 01 DOCUMENT NUMBER: STATUS: NEW STANDARD: Semiconductor Components Industries, LLC, 00 October, 00 Rev. 0 DESCRIPTION: 98AON6741E ON SEMICONDUCTOR STANDARD SOT 6 / SSFP 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. Case Outline Number: PAGE 1 OF XXX

10 DOCUMENT NUMBER: 98AON6741E PAGE OF ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM SANYO ENACT# TC TO ON 9 FEB 01 SEMICONDUCTOR. REQ. BY D. TRUHITTE. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Semiconductor Components Industries, LLC, 01 February, 01 Rev. O Case Outline Number: 61AC

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