MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
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1 MJD3 (NPN), MJD3 (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves ( Suffix) Lead Formed Version in 6 mm Tape and Reel ( T4 Suffix) Electrically Similar to Popular TIP3 and TIP3 Series Epoxy Meets UL 94, 5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable These Devices are Pb Free and are RoHS Compliant SILICON POWER TRANSISTORS 3 AMPERES 4 AND VOLTS 5 WATTS COMPLEMENTARY COLLECTOR,4 COLLECTOR,4 MAXIMUM RATINGS Rating Symbol Max Unit Collector Emitter Voltage V CEO Vdc MJD3, MJD3 MJD3C, MJD3C 4 Collector Base Voltage MJD3, MJD3 MJD3C, MJD3C V CB 4 Vdc Emitter Base Voltage V EB 5. Vdc Collector Current Continuous I C 3. Adc Collector Current Peak I CM 5. Adc Base Current I B. Adc Total Power T C = Derate above Total Power T A = Derate above Operating and Storage Junction Temperature Range P D 5 P D.56. T J, T stg 65 to +5 W W/ C W W/ C ESD Human Body Model HBM 3B V ESD Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 8.3 C/W Thermal Resistance, Junction to Ambient* R JA 8 C/W Lead Temperature for Soldering Purposes T L 6 C *These ratings are applicable when surface mounted on the minimum pad sizes recommended. C BASE 3 CASE STYLE AYWW J3xxG 3 EMITTER A Y WW xx G 4 BASE 3 IPAK CASE 369D STYLE MARKING DIAGRAMS IPAK = Site Code = Year = Work Week =, C,, or C = Pb Free Package 3 EMITTER YWW J3xxG ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. 4 Semiconductor Components Industries, LLC, 6 September, 6 Rev. 6 Publication Order Number: MJD3/D
2 MJD3 (NPN), MJD3 (PNP) ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) OFF CHARACTERISTICS Characteristic Symbol Min Max Unit Collector Emitter Sustaining Voltage (Note ) (I C = 3 madc, I B = ) MJD3, MJD3 MJD3C, MJD3C V CEO(sus) 4 Vdc Collector Cutoff Current (V CE = 4 Vdc, I B = ) MJD3, MJD3 (V CE = 6 Vdc, I B = ) MJD3C, MJD3C I CEO 5 5 Adc Collector Cutoff Current (V CE = Rated V CEO, V EB = ) ICES Adc Emitter Cutoff Current (V BE = 5 Vdc, I C = ) ON CHARACTERISTICS (Note ) I EBO madc DC Current Gain (I C = Adc, V CE = 4 Vdc) (I C = 3 Adc, V CE = 4 Vdc) h FE 5 5 Collector Emitter Saturation Voltage (I C = 3 Adc, I B = 375 madc) Base Emitter On Voltage (I C = 3 Adc, V CE = 4 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note ) (I C = 5 madc, V CE = Vdc, f test = MHz) V CE(sat). V BE(on).8 f T 3 Vdc Vdc MHz Small Signal Current Gain (I C = Adc, V CE = Vdc, f = khz) h fe Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Pulse Test: Pulse Width 3 s, Duty Cycle %.. f T = h fe f test.
3 MJD3 (NPN), MJD3 (PNP) T A.5 T C 5 TYPICAL CHARACTERISTICS V CC + 3 V PD, POWER DISSIPATION (WATTS) T A (SURFACE MOUNT) T C T, TEMPERATURE ( C) + V - 9 V 5 s t r, t f ns DUTY CYCLE = % 5 R B - 4 V D R C SCOPE R B and R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D MUST BE FAST RECOVERY TYPE, e.g.: N585 USED ABOVE I B ma MSD6 USED BELOW I B ma REVERSE ALL POLARITIES FOR PNP. Figure. Power Derating Figure. Switching Time Test Circuit t, TIME ( s) μ.7.3. t V CC = 3 V t V CC = V I C /I B = T J = t, TIME ( s) μ t V CC = 3 V t V CC = V t s I B = I B I C /I B = t s = t s - /8 t f T J =.7 t V BE(off) = V I C, COLLECTOR CURRENT (AMPS) I C, COLLECTOR CURRENT (AMPS) Figure 3. Turn On Time Figure 4. Turn Off Time R JA ( C/W). Duty Cycle =..5.. Single Pulse t, PULSE TIME (sec) Figure 5. Thermal Response 3
4 MJD3 (NPN), MJD3 (PNP) TYPICAL CHARACTERISTICS MJD3, MJD3C (NPN) 5 C V CE = 4 V 5 C V CE = V h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN V CE(sat), COLL EMITT SATURATION VOLTAGE (V).. Figure 6. DC Current Gain at V CE = 4 V.6.3. I C /I B = 5 C... Figure 8. Collector Emitter Saturation Voltage V BE(sat), BASE EMITT SATURATION VOLTAGE (V).. Figure 7. DC Current Gain at V CE = V.. I C /I B = C.3... Figure 9. Base Emitter Saturation Voltage V BE(on), BASE EMITTER ON VOLTAGE (V) V CE = 5 V 5 C... Figure. Base-Emitter On Voltage V CE, COLLECTOR EMITTER VOLTAGE (V).6..8 ma 5 ma A I C = 3 A T A = ma.. I B, BASE CURRENT (ma) Figure. Collector Saturation Region 4
5 MJD3 (NPN), MJD3 (PNP) TYPICAL CHARACTERISTICS MJD3, MJD3C (NPN) C, CAPACITANCE (pf) C ib C ob T A =. V R, REVERSE VOLTAGE (V) Figure. Capacitance f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) V CE = 5 V T A =... Figure 3. Current Gain Bandwidth Product.. V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 4. Safe Operating Area 5
6 MJD3 (NPN), MJD3 (PNP) TYPICAL CHARACTERISTICS MJD3, MJD3C (PNP) 5 C V CE = 4 V 5 C V CE = V h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN.. Figure 5. DC Current Gain at V CE = 4 V.. Figure 6. DC Current Gain at V CE = V V CE(sat), COLL EMITT SATURATION VOLTAGE (V) V BE(on), BASE EMITTER ON VOLTAGE (V) I C /I B = 5 C... Figure 7. Collector Emitter Saturation Voltage V CE = 5 V 5 C... Figure 9. Base Emitter On Voltage V BE(sat), BASE EMITTER SATURATION VOLTAGE (V) V CE, COLLECTOR EMITTER VOLTAGE (V) I C /I B = 5 C Figure 8. Base Emitter Saturation Voltage ma 5 ma A ma.. I B, BASE CURRENT (ma) I C = 3 A Figure. Collector Saturation Region T A = 6
7 MJD3 (NPN), MJD3 (PNP) TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) C ib C ob T A =. V R, REVERSE VOLTAGE (V) Figure. Capacitance f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) V CE = 5 V T A =... Figure. Current Gain Bandwidth Product. s ms. V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 3. Safe Operating Area 7
8 MJD3 (NPN), MJD3 (PNP) ORDERING INFORMATION MJD3CG Device Package Type Package Shipping 75 Units / Rail NJVMJD3CG* 75 Units / Rail MJD3CG IPAK 369D 75 Units / Rail MJD3CRLG,8 / Tape & Reel NJVMJD3CRLG*,8 / Tape & Reel MJD3CT4G NJVMJD3CT4G* MJD3T4G NJVMJD3T4G* MJD3CG 75 Units / Rail NJVMJD3CG* 75 Units / Rail MJD3CRLG,8 / Tape & Reel MJD3CT4G NJVMJD3CT4G* MJD3RLG,8 / Tape & Reel MJD3T4G NJVMJD3T4G* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable. 8
9 MJD3 (NPN), MJD3 (PNP) PACKAGE DIMENSIONS L3 E b3 4 3 A D B A DETAIL A L4 b NOTE 7 c e b SIDE VIEW TOP VIEW.5 (.3) M C L GAUGE PLANE L L DETAIL A ROTATED 9 CW H C SEATING PLANE A (SINGLE GAUGE) CASE ISSUE F C c H SOLDERING FOOTPRINT* Z BOTTOM VIEW ALTERNATE CONSTRUCTIONS.58. BOTTOM VIEW 3..8 Z Z NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED.6 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. INCHES MILLIMETERS DIM MIN MAX MIN MAX A A b b b c c D E e.9 BSC.9 BSC H L L REF.9 REF L. BSC BSC L L4.4. Z STYLE : PIN. BASE. COLLECTOR 3. EMITTER 4. COLLECTOR SCALE 3: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9
10 MJD3 (NPN), MJD3 (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C V B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH. S T SEATING PLANE F 4 3 G A K D 3 PL J.3 (.5) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.9 BSC.9 BSC H J K R S V Z STYLE : PIN. BASE. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MJD3/D
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Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
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Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
More informationBC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
More informationEMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
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NSSJ, NSVJ V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) )
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MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
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MJE24G (NPN), MJE25G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
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NSS3MZ Bipolar Power Transistors V, 3. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage
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N355, MJ955 Preferred Device Complementary Silicon Power Transistors...designed for generalpurpose switching and amplifier applications. DC Current Gain h FE = 7 @ I C = 4 Adc CollectorEmitter Saturation
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NSSC2MZ4, NSVC2MZ4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
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MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
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Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
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MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications.
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MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
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2N6515, 2N6517, 2N65 High Voltage Transistors NPN and PNP Features Voltage and Current are Negative for PNP Transistors PbFree Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N6515 2N6517
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Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter
More informationVdc. Vdc. W W/ C T J, T stg 65 to +200 C P D
MJ141 (PNP), MJ142* (NPN), MJ143* (PNP) *Preferred Devices HighCurrent Complementary Silicon Power Transistors Designed for use in highpower amplifier and switching circuit applications. Features High
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Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
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MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
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MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
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NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of
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