NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
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1 NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable NVJSN These Devices are Pb Free and are RoHS Compliant Applications Boost and Buck Converter Load Switch Battery Protection V (BR)DSS R DS(on) Typ I D Max V 9 V. A 99 V N Channel Drain 6 MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GS 8. V Drain Current t < s T A = C I D. A Continuous Drain Current (Note ) Steady State T A = C I D. A T A = 7 C.8 Power Dissipation (Note ) Steady State P D.6 W Power Dissipation (Note ) t s P D.89 W Pulsed Drain Current t p = s I DM.7 A Operating Junction and Storage Temperature T J, T STG to + Source Current (Body Diode) (Note ) I S.8 A Lead Temperature for Soldering Purposes (/8 from case for s) C T L 6 C ESD Rating Machine Model V THERMAL RESISTANCE RATINGS Rating Symbol Max Unit Junction to Lead Steady State (Note ) R JL C/W Junction to Ambient Steady State (Note ) R JA Junction to Ambient t s (Note ) R JA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces). Gate SC 88/SOT 6 CASE 9B TS M Source ORDERING INFORMATION Device Package Shipping NTJSNTG NVJSNTG MARKING DIAGRAM & PIN ASSIGNMENT D D S SC 88 (Pb Free) SC 88 (Pb Free) TS M / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 6 D D G = Device Code = Date Code = Pb Free Package (Note: Microdot may be in either location) Semiconductor Components Industries, LLC, October, Rev. 6 Publication Order Number: NTJSN/D
2 NTJSN, NVJSN ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS V GS = V, I D = A V Drain to Source Breakdown Voltage Temperature Coefficient V (BR)DSS /T J mv/ C Zero Gate Voltage Drain Current I DSS VGS = V, V DS = V. A Gate to Source Leakage Current I GSS V DS = V, V GS = 8. V na ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = A.6. V Negative Threshold Temperature Coefficient V GS(TH) /T J. mv/ C Drain to Source On Resistance R DS(on) V GS =. V, I D =.6 A 9 m V GS =.7 V, I D =. A 99 V GS =. V, I D =. A 6 Forward Transconductance g FS V DS =. V, I D =. A. S Input Capacitance C ISS CHARGES AND CAPACITANCES 9 6 pf Output Capacitance C OSS V GS = V, f =. MHz, V DS = V. Reverse Transfer Capacitance C RSS 8. Total Gate Charge Q G(TOT).7. nc Threshold Gate Charge Q G(TH) V GS =. V, V DS =. V,. Gate to Source Charge Q GS I D =.9 A.. Gate to Drain Charge Q GD.. SWITCHING CHARACTERISTICS (Note ) Turn On Delay Time t d(on) 6. ns Rise Time t r V GS =. V, V DS = 6. V,.7 8. Turn Off Delay Time t d(off) I D =. A, R G = Fall Time t f 6 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD V GS = V, I S =.6 A. Pulse Test: pulse width s, duty cycle %.. Switching characteristics are independent of operating junction temperatures..8. V
3 NTJSN, NVJSN TYPICAL PERFORMANCE CURVES ( unless otherwise noted) V 6 V. V. V V. V..... V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure. On Region Characteristics V GS = V V GS =. V V GS = V.. V DS V C T J = C... V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( ) V GS =. V T J = C..... Figure. On Resistance vs. Drain Current and Temperature R DS(on), DRAIN TO SOURCE RESISTANCE ( )... V GS =.7 V V GS =. V Figure. On Resistance vs. Drain Current and Gate Voltage R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED) I D =.6 A V GS =. V I DSS, LEAKAGE (na) V GS = V T J = C.6 7 T J, JUNCTION TEMPERATURE ( C) Figure. On Resistance Variation with Temperature V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 6. Drain to Source Leakage Current vs. Voltage
4 NTJSN, NVJSN TYPICAL PERFORMANCE CURVES ( unless otherwise noted) C, CAPACITANCE (pf) 7 V DS = V C iss C rss V GS = V C iss C oss C rss V GS V DS V GS, GATE TO SOURCE VOLTAGE (VOLTS) V GS =. V Q GS Q G(TOT) Q GD V DS =. V I D =.9 A Q g, TOTAL GATE CHARGE (nc) GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate to Source and Drain to Source Voltage vs. Total Charge t, TIME (ns) V DD = 6. V I D =. A V GS =. V t f t d(off) t d(on) t r R G, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance I S, SOURCE CURRENT (AMPS) V GS = V V SD, SOURCE TO DRAIN VOLTAGE (VOLTS) Figure. Diode Forward Voltage vs. Current
5 NTJSN, NVJSN PACKAGE DIMENSIONS SC 88/SC7 6/SOT 6 CASE 9B ISSUE W D e NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. 9B OBSOLETE, NEW STANDARD 9B. H E 6 E b 6 PL. (.8) M E M A L C MILLIMETERS DIM MIN NOM MAX A.8.9. A... A b... C... D.8.. E... e.6 BSC L... H E... INCHES MIN NOM MAX REF.8 REF BSC A SOLDERING FOOTPRINT* A SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 87 USA Phone: 67 7 or 8 86 Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 8 87 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTJSN/D
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