BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
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1 BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features Extremely Fast Switching Speed Low.5 I F = madc AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (T J = 5C unless otherwise noted) Rating Symbol alue Unit Reverse oltage R Forward Power T A = 5C Derate above 5C Thermal Resistance (Note ) Junction-to-Ambient (Note ) P F 5.8 R JA 58 mw mw/c C/W Forward Current (DC) I F Max ma Non Repetitive Peak Forward Current t p < msec Repetitive Peak Forward Current Pulse Wave = sec, Duty Cycle = 66% I FSM 6 I FRM Junction Temperature T J 55 to +5 C Storage Temperature Range T stg 55 to +5 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR Minimum Pad.. FR x. inch Pad. ma ma OLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES ANODE 5C M CASE 8 STYLE 9 CATHODE ANODE MARKING DIAGRAM 5C M = Device Code = Date Code = Pb Free Package (*Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Device Package Shipping BAT54CLTG SBAT54CLTG BAT54CLTG ORDERING INFORMATION, /, /, / For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, November, Rev. 8 Publication Order Number: BAT54CLT/D
2 BAT54CLTG, SBAT54CLTG ELECTRICAL CHARACTERISTICS (T A = 5C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Reverse Breakdown oltage (I R = A) Total Capacitance ( R =., f =. MHz) Reverse Leakage ( R = 5 ) (I F =. madc) (I F = madc) (I F = madc) Reverse Recovery Time (I F = I R = madc, I R(REC) =. madc, Figure ) (I F =. madc) (I F = madc) (BR)R C T 7.6 I R t rr pf A ns 8 + k. F H I F. F t r t p T % I F t rr T 5 OUTPUT PULSE GENERATOR DUT 5 INPUT SAMPLING OSCILLOSCOPE R 9% INPUT SIGNAL I R i R(REC) = ma OUTPUT PULSE (I F = I R = ma; measured at i R(REC) = ma) Notes:. A. k variable resistor adjusted for a Forward Current (I F ) of ma. Notes:. Input pulse is adjusted so I R(peak) is equal to ma. Notes:. t p» t rr Figure. Recovery Time Equivalent Test Circuit
3 BAT54CLTG, SBAT54CLTG 5C I F, FORWARD CURRENT (ma). 5C 85C 5C 4C 55C , FORWARD OLTAGE (OLTS).6 Figure. I R, REERSE CURRENT (A)... T A = 5C T A = 5C T A = 85C T A = 5C R, REERSE OLTAGE (OLTS) Figure. Leakage Current 4 C T, TOTAL CAPACITANCE (pf) R, REERSE OLTAGE (OLTS) Figure 4. Total Capacitance
4 BAT54CLTG, SBAT54CLTG PACKAGE DIMENSIONS (TO 6) CASE 8 8 ISSUE AP A E A D e b HE SEE IEW C L L IEW C c.5 NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b c D E e L L H E STYLE 9: PIN. ANODE. ANODE. CATHODE SOLDERING FOOTPRINT* SCALE :..79 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative BAT54CLT/D
5 Mouser Electronics Authorized Distributor Click to iew Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: BAT54CLT
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BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon
BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2
NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSJ, NSVJ V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) )
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
1SMA59xxBT3 Series, SZ1SMA59xxBT3G Series. 1.5 Watt Plastic Surface Mount Zener Voltage Regulators
59xxBT3 Series, SZ59xxBT3G Series.5 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of.5 Watt Zener Diodes offers the following advantages. Features Standard Zener Breakdown
MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon
MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and
SMF5.0AT1G Series, SZSMF5.0AT1G Series. 200 W Transient Voltage Suppressor SOD-123 Flat Lead Package
SMF5.AT1G Series, SZSMF5.AT1G Series 2 W Transient Voltage Suppressor SOD-123 Flat Lead Package The SMF5.AT1G Series is designed to protect voltage sensitive components from high voltage, high energy transients.
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
1SMB59xxBT3 Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBT Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
MMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon
L, AL, SAL General Purpose Transistors NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward
BAV70DXV6T1, BAV70DXV6T5 Preferred Device. Monolithic Dual Switching Diode Common Cathode. Lead-Free Solder Plating.
BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode LeadFree Solder Plating MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R 70 Vdc Forward
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89
NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors
EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.SMC6.8AT3G Series, SZ.SMC6.8AT3G Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMC series is designed to protect voltage sensitive components from high voltage, high
1SMA10CAT3G Series, SZ1SMA10CAT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Bidirectional
110CAT3G Series, SZ110CAT3G Series 400 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NJTN, NJVNTG, NJVNTG Bipolar Power Transistors NPN Silicon Features Epoxy Meets UL 9, V @.5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ
NSS12100M3T5G. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 350 m
NSSMTG, A, Low CE(sat) PNP Transistor ON Semiconductor's e PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant