NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
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1 NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space Saving Lowest RDS(on) in.x. Package ESD Protected These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V (BR)DSS V MOSFET R DS(on) MAX V 95 V V I D MAX 5. A Applications High Side Load Switch PA Switch and Battery Switch Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others G 3 V S MAXIMUM RATINGS (T J = 5 C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage V DSS V D Gate-to-Source Voltage V GS ±8. V P Channel MOSFET Continuous Drain Current (Note ) Power Dissipation (Note ) Steady State T A = 5 C I D. A T A = 85 C.9 t 5 s T A = 5 C 5. Steady State T A = 5 C P D.5 W UDFN CASE 57AU COOL MARKING DIAGRAM AD M Continuous Drain Current (Note ) t 5 s T A = 5 C.3 Steady State T A = 5 C I D. A T A = 85 C.9 Power Dissipation (Note ) T A = 5 C P D. W Pulsed Drain Current tp = s I DM 7 A Operating Junction and Storage Temperature T J, T STG -55 to 5 C AD= Specific Device Code M = Date Code = Pb Free Package (Note: Microdot may be in either location) Source Current (Body Diode) (Note ) I S.8 A Lead Temperature for Soldering Purposes (/8 from case for s) T L C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface Mounted on FR Board using in sq pad size (Cu area =.7 in sq [ oz] including traces).. Surface-mounted on FR board using the minimum recommended pad size of 3 mm, oz. Cu. (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, August, Rev. Publication Order Number: NTLUS3A9PZ/D
2 NTLUS3A9PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient Steady State (Note 3) R θja 8 C/W Junction-to-Ambient t 5 s (Note 3) R θja 55 Junction-to-Ambient Steady State min Pad (Note ) R θja Input Capacitance C ISS ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 5 A V Drain-to-Source Breakdown Voltage Temperature Coefficient V (BR)DSS /T J I D = 5 A, ref to 5 C 8. mv/ C Zero Gate Voltage Drain Current I DSS VGS = V, T J = 5 C. A V DS = V T J = 85 C Gate-to-Source Leakage Current I GSS V DS = V, V GS = ±8. V ± A ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 5 A.. V Negative Threshold Temp. Coefficient V GS(TH) /T J 3. mv/ C Drain-to-Source On Resistance R DS(on) V GS =.5 V, I D =. A 5 m V GS =.5 V, I D =. A 7 95 V GS =.8 V, I D =. A V GS =.5 V, I D =.5 A 37 3 Forward Transconductance g FS V DS = V, I D = 3. A S CHARGES, CAPACITANCES & GATE RESISTANCE 95 pf Output Capacitance C OSS V GS = V, f = MHz, V DS = V 9 Reverse Transfer Capacitance C RSS 85 Total Gate Charge Q G(TOT).3 nc Threshold Gate Charge Q G(TH) V GS =.5 V, V DS = V;.9 Gate-to-Source Charge Q GS ID = 3. A. Gate-to-Drain Charge Q GD 3.3 SWITCHING CHARACTERISTICS, VGS =.5 V (Note ) Turn-On Delay Time t d(on) 7.9 ns Rise Time t r V GS =.5 V, V DD = V, 5.7 Turn-Off Delay Time t d(off) I D = 3. A, R G = 3.8 Fall Time t f 8.5 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time t RR V GS = V, I S =. A T J = 5 C.7. V T J = 5 C. Charge Time t a V GS = V, disd/dt = A/ s, 8.5 Discharge Time t b I S =. A ns Reverse Recovery Charge Q RR. nc 3. Surface-mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces).. Surface-mounted on FR board using the minimum recommended pad size of 3 mm, oz. Cu. 5. Pulse Test: pulse width 3 s, duty cycle %.. Switching characteristics are independent of operating junction temperatures.
3 NTLUS3A9PZ TYPICAL CHARACTERISTICS V GS =.5 V. V 3.5 V.5 3. V.5 V.. V.8 V.5 V V DS V T J = 5 C T J = 5 C.5. T J = 55 C Figure. On Region Characteristics V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( ) V GS, GATE VOLTAGE (V) T J = 5 C I D =. A R DS(on), DRAIN TO SOURCE RESISTANCE ( ) V T J = 5 C.8 V.5 V V GS =.5 V 8 8 Figure 3. On Resistance vs. Gate to Source Voltage Figure. On Resistance vs. Drain Current and Gate Voltage., R DS(on), NORMALIZED DRAIN TO SOURCE RESISTANCE ( ) V GS =.5 V I D =. A I DSS, LEAKAGE (na) 5 T J = 5 C T J = 85 C 8 8 T J, JUNCTION TEMPERATURE ( C) Figure 5. On Resistance Variation with Temperature Figure. Drain to Source Leakage Current vs. Voltage 3
4 C, CAPACITANCE (pf) t, TIME (ns) 8 C rss C iss C oss 8 8 V GS =.5 V V DD = 5 V I D = 3. A Figure 7. Capacitance Variation t d(off) t f t r t d(on) NTLUS3A9PZ TYPICAL CHARACTERISTICS V GS = V T J = 5 C f = MHz V GS, GATE TO SOURCE VOLTAGE (V) I S, SOURCE CURRENT (A) 5 3 Q GS V DS Q GD Q T Figure 8. Gate to Source and Drain to Source Voltage vs. Total Charge T J = 5 C VGS Q G, TOTAL GATE CHARGE (nc) T J = 5 C V DS = V I D = 3. A T J = 5 C 8 8 R G, GATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation vs. Gate Resistance... T J = 55 C.8. V SD, SOURCE TO DRAIN VOLTAGE (V) Figure. Diode Forward Voltage vs. Current. V GS(th) (V) I D = 5 A 5 5 POWER (W) E 5.E 3.E.E+.E+3 T J, JUNCTION TEMPERATURE ( C) SINGLE PULSE TIME (s) Figure. Threshold Voltage Figure. Single Pulse Maximum Power Dissipation
5 NTLUS3A9PZ TYPICAL CHARACTERISTICS R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE E Duty Cycle = E 5 E V GS = 8 V Single Pulse T C = 5 C R DS(on) Limit Thermal Limit Package Limit Figure 3. Maximum Rated Forward Biased Safe Operating Area E 3 Single Pulse E t, TIME (s) s s ms ms dc Figure. FET Thermal Response R JA = 8 C/W E E+ E+ E+ E+3 DEVICE ORDERING INFORMATION NTLUS3A9PZTAG NTLUS3A9PZTBG Device Package Shipping UDFN (Pb Free) UDFN (Pb Free) 3 / Tape & Reel 3 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 5
6 NTLUS3A9PZ PACKAGE DIMENSIONS UDFN.x.,.5P CASE 57AU ISSUE O X. C PIN ONE REFERENCE X NOTE.5 C.5 C. C D ÉÉ TOP VIEW DETAIL B SIDE VIEW A B E A (A3) A C SEATING PLANE L EXPOSED Cu A DETAIL A OPTIONAL CONSTRUCTION ÉÉ ÉÉ DETAIL B OPTIONAL CONSTRUCTION L MOLD CMPD A3 NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN.5 AND.3 mm FROM TERMINAL.. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A.5.55 A..5 A3.3 REF b..3 D. BSC E. BSC e.5 BSC D..7 D.5.5 E.57.7 F.55 BSC G.5 BSC L..3 L.5. C A B F 3 e D G E SOLDERMASK DEFINED MOUNTING FOOTPRINT*.8..3 X L DETAIL A D BOTTOM VIEW X b. C A B.5. C A B C NOTE 3.9 X.35 X PITCH DIMENSIONS: MILLIMETERS.8 *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Cool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 53, Denver, Colorado 87 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTLUS3A9PZ/D
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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