NTMFS4H01N Power MOSFET
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1 NTMFS4HN Power MOSFET V, 334 A, Single N Channel, SO 8FL Features Optimized esign to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These evices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Performance C-C Converters System Voltage Rails Netcom, Telecom Servers & Point of Load MAXIMUM RATINGS ( unless otherwise stated) Parameter Symbol Value Units rain-to-source Voltage V SS V Gate-to-Source Voltage V GS ± V Continuous rain Current R JA (T A = C, Note ) Power issipation R JA (T A = C, Note ) I 4 A P 3. W V GS MAX R S(on) TYP Q GTOT 4. V.97 m 39 nc V.7 m 8 nc PIN CONNECTIONS SO8 FL ( x 6 mm) (Top View) (Bottom View) Continuous rain Current R JC (T C = C, Note ) Power issipation R JC (T C = C, Note ) I 334 A P W N CHANNEL MOSFET ( 8) Pulsed rain Current (t p = s) I M 68 A Single Pulse rain-to-source Avalanche Energy (Note ) (I L = 8 A pk, L =.3 mh) E AS mj G (4) rain to Source dv/dt dv/dt 7 V/ns Maximum Junction Temperature T J(max) C Storage Temperature Range T STG to Lead Temperature Soldering Reflow (SM Styles Only), Pb-Free Versions (Note ) C T SL 6 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Values based on copper area of 64 mm (or in ) of oz copper thickness and FR4 PCB substrate.. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLERRM/. 3. This is the absolute maximum rating. Parts are % UIS tested at, V GS = V, I L = 38 A, E AS = 7 mj. S (,,3) ORERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. THERMALCHARACTERISTICS Parameter Symbol Max Units Thermal Resistance, Junction-to-Ambient (Note and 4) Junction-to-Case (Note and 4) R JA 38.9 R JC. 4. Thermal Resistance R JA and R JC as defined in JES 3. C/W Semiconductor Components Industries, LLC, 4 April, 4 Rev. Publication Order Number: NTMFS4HN/
2 NTMFS4HN ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS rain to Source Breakdown Voltage V (BR)SS V GS = V, I = A V rain to Source Breakdown Voltage Temperature Coefficient V (BR)SS / T J 3 Zero Gate Voltage rain Current I SS V GS = V, V S = V 3 A Gate to Source Leakage Current I GSS V S = V, V GS = + V + na ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V S, I = A.. V Negative Threshold Temperature Coefficient V GS(TH) /T J 4 mv/ C rain to Source On Resistance R S(on) V GS = V I = 3 A..7 V GS = 4. V I = 3 A m Forward Transconductance g FS V S = V, I = A S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C ISS 693 Output Capacitance C OSS V GS = V, f = MHz, V S = V 378 pf Reverse Transfer Capacitance C RSS Total Gate Charge Q G(TOT) 39 Threshold Gate Charge Q G(TH).4 V GS = 4. V, V S = V; I = 3 A Gate to Source Charge Q GS 4 nc Gate to rain Charge Q G 8. Total Gate Charge Q G(TOT) V GS = V, V S = V; I = 3 A 8 nc Gate Resistance R G T A = C. SWITCHING CHARACTERISTICS, V GS = 4. V (Note ) Turn On elay Time t d(on) 8 Rise Time t r V GS = 4. V, V S = V, I = A, 49 Turn Off elay Time t d(off) R G = ns Fall Time t f 3 SWITCHING CHARACTERISTICS, V GS = V (Note ) Turn On elay Time t d(on) Rise Time t r V GS =. V, V S = V, 33.6 Turn Off elay Time t d(off) I = A, R G = ns Fall Time t f 34 RAIN SOURCE IOE CHARACTERISTICS Forward iode Voltage V S VGS = V, I S = A.7.. Reverse Recovery Time t RR 68.7 Charge Time t a V GS = V, dis/dt = A/ s, 34. ischarge Time t b I S = 3 A 34.6 Reverse Recovery Charge Q RR 9 nc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Pulse Test: pulse width 3 s, duty cycle %. 6. Switching characteristics are independent of operating junction temperatures. mv/ C V ns
3 NTMFS4HN TYPICAL CHARACTERISTICS I, RAIN CURRENT (A) V GS = V to 3 V V GS =.8 V V GS =.6 V V GS =.4 V V GS =. V I, RAIN CURRENT (A) V S = V.... T J = C. 3. V S, RAIN TO SOURCE VOLTAGE (V) V GS, GATE TO SOURCE VOLTAGE (V) Figure. On Region Characteristics Figure. Transfer Characteristics R S(on), RAIN TO SOURCE RESISTANCE ( ) V GS (V) Figure 3. On Resistance vs. V GS 7 R S(on), RAIN TO SOURCE RESISTANCE ( ) I.8 = 3 A T = C.8 V GS = 4. V V GS = V I, RAIN CURRENT (A) Figure 4. On Resistance vs. rain Current and Gate Voltage R S(on), RAIN TO SOURCE RESISTANCE (NORMALIZE).7.6 I = 3 A. V GS = V T J, JUNCTION TEMPERATURE ( C) Figure. On Resistance Variation with Temperature I SS, LEAKAGE (na) E 3 E 4 E E 6 E 7 E 8 V GS = V T J = C T J = 8 C V S, RAIN TO SOURCE VOLTAGE (V) Figure 6. rain to Source Leakage Current vs. Voltage 3
4 NTMFS4HN TYPICAL CHARACTERISTICS C, CAPACITANCE (pf), C iss C oss C rss V GS = V V GS, GATE TO SOURCE VOLTAGE (V) Q gs Q gd 3 Q T 4 V GS = V V =. V I = 3 A V S, RAIN TO SOURCE VOLTAGE (V) Q g, TOTAL GATE CHARGE (nc) Figure 7. Capacitance Variation Figure 8. Gate to Source and rain to Source Voltage vs. Total Charge t, TIME (ns) V = V I = A V GS = V t d(off) t d(on) t r t f I S, SOURCE CURRENT (A) 3 V GS = V R G, GATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation vs. Gate Resistance V S, SOURCE TO RAIN VOLTAGE (V) Figure. iode Forward Voltage vs. Current I, RAIN CURRENT (A)... V < V GS < V. R S(on) Limit Thermal Limit Package Limit s ms ms dc E AS, SINGLE PULSE RAIN TO SOURCE AVALANCHE ENERGY (mj) I = 38 A V S, RAIN TO SOURCE VOLTAGE (V) Figure. Maximum Rated Forward Biased Safe Operating Area T J, STARTING JUNCTION TEMPERATURE ( C) Figure. Maximum Avalanche Energy vs. Starting Junction Temperature 4
5 NTMFS4HN TYPICAL CHARACTERISTICS R(t) ( C/W) % uty Cycle % % % % %... Single Pulse..... PULSE TIME (sec) Figure 3. Thermal Characteristics PCB Cu Area 6 mm PCB Cu thk oz 4 E+3 3 GFS (S) 3 I, RAIN CURRENT (A) E+ E E+ E 7 E 6 E E 4 E 3 E I (A) PULSE WITH (sec) Figure 4. GFS vs. I Figure. Avalanche Characteristics
6 NTMFS4HN ORERING INFORMATION NTMFS4HNTG NTMFS4HNT3G evice Package Shipping SO8 FL (Pb-Free) SO8 FL (Pb-Free) / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BR8/. SO 8 FLAT LEA CASE 488AA STYLE S S S G MARKING IAGRAM 4HN AYWZZ A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceability 6
7 NTMFS4HN. C. C 8X b. C A B. c L X. C A B X E E 3 4 TOP VIEW A SIE VIEW ETAIL A e/ 4 K PACKAGE IMENSIONS. C c FN x6,.7p (SO 8FL) CASE 488AA ISSUE H 3 X e ETAIL A 4 X A C SEATING PLANE SOLERING FOOTPRINT* 3X X.7 4X. NOTES:. IMENSIONING AN TOLERANCING PER ASME Y4.M, CONTROLLING IMENSION: MILLIMETER. 3. IMENSION AN E O NOT INCLUE MOL FLASH PROTRUSIONS OR GATE BURRS. MILLIMETERS IM MIN NOM A.9. A. b.33.4 c.3.8. BSC E 6. BSC E.7.9 E e.7 BSC G..6 K..3 L..6 L..7 M STYLE : PIN. SOURCE. SOURCE 3. SOURCE 4. GATE. RAIN MAX PIN (EXPOSE PA) G E L M.33 X X BOTTOM VIEW X *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor P.O. Box 63, enver, Colorado 87 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTMFS4HN/
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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FC65P Single P-Channel, Logic Level, PowerTrench TM MOSFET General escription This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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More informationPUBLICATION ORDERING INFORMATION. Semiconductor Components Industries, LLC
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