MBD301G, MMBD301LT1G. Silicon Hot-Carrier Diodes. SCHOTTKY Barrier Diodes 30 VOLTS SILICON HOT CARRIER DETECTOR AND SWITCHING DIODES
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1 Silicon Hot-Carrier iodes SCHOTTKY Barrier iodes These devices are designed primarily for high efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low cost, high volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Features Extremely Low Minority Carrier Lifetime 5 ps (Typ) Very Low Capacitance.5 pf V R = 5 V Low Reverse Leakage I R = nadc (Typ) MB0, MMB0 These evices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS MB0 MMB0LT Rating Symbol Value Unit Reverse Voltage V R 0 V Total evice T A = 5 C erate above 5 C Operating Junction Temperature Range P F mw mw/ C T J 55 to +5 C 0 VOLTS SILICON HOT CARRIER ETECTOR AN SWITCHING IOES MB0 TO 9 (TO 6AC) CASE 8 STYLE A = Assembly Location Y = Year WW = Work Week = Pb Free Package (Note: Microdot may be in either location) CATHOE ANOE MARKING IAGRAM MB 0 AYWW Storage Temperature Range T stg 55 to +50 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MMB0LT MARKING IAGRAM SOT (TO 6) CASE 8 STYLE 8 4T M M = ate Code = Pb Free Package (Note: Microdot may be in either location) CATHOE ANOE ORERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 009 August, 009 Rev. 5 Publication Order Number: MB0/
2 ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 0 A) V (BR)R 0 V Total Capacitance (V R = 5 V, f =.0 MHz) Figure C T pf Reverse Leakage (V R = 5 V) Figure I R 00 nadc Forward Voltage (I F =.0 madc) Figure 4 V F Vdc Forward Voltage (I F = 0 madc) Figure 4 V F Vdc ORERING INFORMATION MB0G evice Package Shipping TO Units / Bulk MMB0LTG SOT 000 / Tape & Reel MMB0LTG SOT 0,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BR80/.
3 TYPICAL ELECTRICAL CHARACTERISTICS C T, TOTAL CAPACITANCE (pf) f =.0 MHz, MINORITY CARRIER LIFETIME (ps) KRAKAUER METHO V R, REVERSE VOLTAGE (VOLTS) I F, FORWAR CURRENT (ma) Figure. Total Capacitance Figure. Minority Carrier Lifetime 0 00, REVERSE LEAKAGE ( A) I R T A = 00 C 75 C 5 C I F, FORWAR CURRENT (ma) 0.0 T A = 85 C T A = -40 C T A = 5 C V R, REVERSE VOLTAGE (VOLTS) Figure. Reverse Leakage V F, FORWAR VOLTAGE (VOLTS) Figure 4. Forward Voltage I F(PEAK) CAPACITIVE I R(PEAK) FORWAR STORAGE SINUSOIAL GENERATOR BALLAST NETWORK (PAS) UT PAS SAMPLING OSCILLOSCOPE (50 INPUT) Figure 5. Krakauer Method of Measuring Lifetime
4 PACKAGE IMENSIONS TO 9 (TO 6AC) CASE 8 06 ISSUE L SEATING PLANE P R X X H G A V N L K B C ÉÉJ SECTION X X NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING IMENSION: INCH.. CONTOUR OF PACKAGE BEYON ZONE R IS UNCONTROLLE. 4. LEA IMENSION IS UNCONTROLLE IN P AN BEYON IMENSION K MINIMUM. INCHES MILLIMETERS IM MIN MAX MIN MAX A B C G BSC.7 BSC H 0.00 BSC.54 BSC J K L N P R V STYLE : PIN. ANOE. CATHOE N 4
5 PACKAGE IMENSIONS SOT (TO 6) CASE 8 08 ISSUE AN A E A e b HE SEE VIEW C L L VIEW C c 0.5 NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING IMENSION: INCH.. MAXIMUM LEA THICKNESS INCLUES LEA FINISH THICKNESS. MINIMUM LEA THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL THRU 07 AN 09 OBSOLETE, NEW STANAR MILLIMETERS INCHES IM MIN NOM MAX MIN NOM MAX A A b c E e L L H E STYLE 8: PIN. ANOE. NO CONNECTION. CATHOE SOLERING FOOTPRINT* SCALE 0: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor P.O. Box 56, enver, Colorado 807 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your loca Sales Representative MB0/
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EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSJ, NSVJ V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) )
MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
PCS2I2309NZ. 3.3 V 1:9 Clock Buffer
. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The
1SMA59xxBT3 Series, SZ1SMA59xxBT3G Series. 1.5 Watt Plastic Surface Mount Zener Voltage Regulators
59xxBT3 Series, SZ59xxBT3G Series.5 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of.5 Watt Zener Diodes offers the following advantages. Features Standard Zener Breakdown
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NJTN, NJVNTG, NJVNTG Bipolar Power Transistors NPN Silicon Features Epoxy Meets UL 9, V @.5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ
BC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
MBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
MMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon
L, AL, SAL General Purpose Transistors NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications
1N6373-1N6381 Series (ICTE-5 - ICTE-36) 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors. Unidirectional*
N6373 - N638 Series (ICTE-5 - ICTE-36) 5 Watt Peak Power Mosorb Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage,
MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
1SMB59xxBT3 Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBT Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint