LNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.
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1 Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected Gate Minimum Breakdown Voltage Rating of V We declare that the material of product is ROHS compliant and halogen free. Applications Level Shifters Level Switches Low Side Load Switches Portable Applications MAXIMUM RATINGS (T J = 5 C unless otherwise noted) Parameter Symbol Value Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GS ± V Continuous Drain Current (Note ) Power Dissipation (Note ) Continuous Drain Current (Note ) Power Dissipation (Note ) Steady State T A = 5 C I D.5 A T A = 85 C.7 Steady State P D.69 W t < s T A = 5 C I D.56 A T A = 85 C.4 t < 5 s P D.8 W Pulsed Drain Current t p = s I DM.7 A Operating Junction and Storage Temperature T J, Tstg 55 to 5 Source Current (Body Diode) I S. A Lead Temperature for Soldering Purposes (/8 from case for s) C T L 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction to Ambient Steady State (Note ) R JA 8 C/W Junction to Ambient t < s (Note ) R JA 5 Junction to Ambient Steady State (Note ) R JA. Surface mounted on FR4 board using in sq pad size (Cu area =.7 in sq [ oz] including traces).. Surface mounted on FR4 board using the minimum recommended pad size. LNTR4NLTG Gate SOT- MARKING DIAGRAM Drain Gate Drain Source TR8 M Source TR8 = Specific Device Code M = Date Code = Pb Free Package ORDERING INFORMATION Device Package Shipping LNTR4NTG SOT /Tape & Reel LNTR4NTG SOT,/Tape & Reel /5
2 LNTR4NLTG ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS V GS = V, I D = A V Drain to Source Breakdown Voltage Temperature Coefficient V (BR)DSS /T J 4 mv/ C Zero Gate Voltage Drain Current I DSS V GS = V, V DS = V T J = 5 C. A Gate to Source Leakage Current I GSS V DS = V, V GS = ± V ±. A ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 5 A.8.6 V Negative Threshold Temperature Coefficient V GS(TH) /T J.4 mv/ C Drain to Source On Resistance R DS(on) V GS =.5 V, I D = ma.5. V GS = 4. V, I D = ma..5 Forward Transconductance g FS V DS =. V, I D = ma. S CHARGES AND CAPACITANCES Input Capacitance C iss Output Capacitance C oss V GS = V, f =. MHz, V DS = 5. V 9.7 Reverse Transfer Capacitance C rss 8. Total Gate Charge Q G(TOT) Threshold Gate Charge Q G(TH) V GS = 5. V, V DS = 4 V,.5 Gate to Source Gate Charge Q GS I D =. A. Gate to Drain Charge Q GD. SWITCHING CHARACTERISTICS (Note 4) Turn On Delay Time t d(on) Rise Time t r V GS = 4.5 V, V DD = 5. V, 47.9 Turn Off Delay Time t d(off) I D =. A, R G = Fall Time t f 64. SOURCE DRAIN DIODE CHARACTERISTICS Forward Diode Voltage V SD V GS = V, I S = ma Reverse Recovery Time t RR V GS = V, di S /dt = 8A/ s, I S = ma. Pulse Test: pulse width s, duty cycle %. 4. Switching characteristics are independent of operating junction temperatures T J = 5 C.65.7 V T J = 5 C.45 pf nc ns 4 ns /5
3 TYPICAL PERFORMANCE CURVES (T J = 5 C unless otherwise noted) LNTR4NLTG.6 V GS = V to 5 V.6 V DS V I D, DRAIN CURRENT (A) 4.5 V V.4.5 V I D, DRAIN CURRENT (A).8.4 T J = 55 C T J = 5 C T J = 5 C.5 V V DS, DRAIN TO SOURCE VOLTAGE (V) 4 V GS, GATE TO SOURCE VOLTAGE (V) 5 Figure. On Region Characteristics Figure. Transfer Characteristics I D =. A V GS, GATE TO SOURCE VOLTAGE (V) Figure. On Resistance vs. Gate to Source Voltage V GS = V T J = 5 C T J = 5 C T J = 55 C I D, DRAIN CURRENT (AMPS) Figure 4. On Resistance vs. Drain Current and Temperature (NORMALIZED) I D =. A V GS = 4.5 V T J, JUNCTION TEMPERATURE ( C) I DSS, LEAKAGE (na) V GS = V T J = 5 C T J = 5 C V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 5. On Resistance Variation with Temperature Figure 6. Drain to Source Leakage Current vs. Voltage /5
4 LNTR4NLTG C, CAPACITANCE (pf) 5 4 TYPICAL PERFORMANCE CURVES (T J = 5 C unless otherwise noted) T J = 5 C V GS = V C iss C oss C rss DRAIN TO SOURCE VOLTAGE (V) Q G, TOTAL GATE CHARGE (nc) V GS, GATE TO SOURCE VOLTAGE (V) 5 4 T J = 5 C I D =. A Figure 7. Capacitance Variation Figure 8. Gate to Source & Drain to Source Voltage vs. Total Charge I S, SOURCE CURRENT (A).. V GS = V T J = 5 C T J = 5 C..4.6 V SD, SOURCE TO DRAIN VOLTAGE (V).8 Figure 9. Diode Forward Voltage vs. Current 4/5
5 LNTR4NLTG SOT- NOTES:. DIMENSIONING AND TOLERANCING PER ANSI A L Y4.5M,98. CONTROLLING DIMENSION: INCH. V G B S DIM INCHES MILLIMETERS MIN MAX MIN MAX A B C D G H D H C K J J K L S V inches mm 5/5
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 60 156 @ V GS = 10V 3 192 @ V GS = 4.5V 2.1 Features Advance Trench Process Technology High Density Cell
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