NTP75N03L09, NTB75N03L09. Power MOSFET 75 Amps, 30 Volts. N Channel TO 220 and D 2 PAK. 75 AMPERES, 30 VOLTS R DS(on) = 8 m
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1 NTP75NL9, NTB75NL9 Power MOSFET 75 Amps, Volts NChannel TO and D PAK This Logic Level Vertical Power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The draintosource diode has a ideal fast but soft recovery. Features UltraLow R DS(on), Single Base, Advanced Technology SPICE Parameters Available Diode is Characterized for Use in Bridge Circuits I DSS and V DS(on) Specified at Elevated Temperatures High Avalanche Energy Specified ESD JEDAC Rated HBM Class, MM Class B, CDM Class PbFree Packages are Available Typical Applications Power Supplies Inductive Loads PWM Motor Controls Replaces MTP75NHDL and MTB75NHDL in Many Applications 75 AMPERES, VOLTS R DS(on) = 8 m G NChannel D TO CASE A STYLE 5 S MARKING DIAGRAMS & PIN ASSIGNMENTS Drain 75N L9G AYWW Gate Source Drain Drain D PAK CASE 8AA STYLE Gate 75N L9G AYWW Drain Source 75NL9 A Y WW G = Device Code = Assembly Location = Year = Work Week = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 5 August, 5 Rev. 7 Publication Order Number: NTP75NL9/D
2 NTP75NL9, NTB75NL9 MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS Vdc DraintoGate Voltage (RGS = M ) V DGB Vdc GatetoSource Voltage Continuous V GS ± Vdc Nonrepetitive (tp ms) V GS ± Vdc Drain Current T C = 5 C T C = C Single Pulse (tp s) I D I D I DM Adc Apk Total Power T C = 5 C Derate above 5 C Total Power T A = 5 C (Note ) P D 5..5 W W/ C W Operating and Storage Temperature Range T J and T stg 55 to 5 C Single Pulse DraintoSource Avalanche Energy Starting (V DD = 8 Vdc, V GS = Vdc, L = mh, I L (pk) = 55 A, V DS = Vdc) E AS 5 mj Thermal Resistance JunctiontoCase JunctiontoAmbient JunctiontoAmbient (Note ) R JC R JA R JA C/W Maximum Lead Temperature for Soldering Purposes, /8 from case for seconds T L 6 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. When surface mounted to an FR board using the minimum recommended pad size. ORDERING INFORMATION Device Package Shipping NTP75NL9 TO 5 Units/Rail NTP75NL9G TO (PbFree) 5 Units/Rail NTB75NL9 D PAK 5 Units/Rail NTB75NL9G D PAK (PbFree) 5 Units/Rail NTB75NL9T D PAK 8 Tape & Reel NTB75NL9TG D PAK (PbFree) 8 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.
3 NTP75NL9, NTB75NL9 ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (Note ) (V GS = Vdc, I D = 5 Adc) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (V DS = Vdc, V GS = Vdc) (V DS = Vdc, V GS = Vdc, T J = 5 C) (BR)DSS 57 GateBody Leakage Current (V GS = ± Vdc, V DS = Vdc) I GSS ± nadc ON CHARACTERISTICS (Note ) Gate Threshold Voltage (Note ) (V DS = V GS, I D = 5 Adc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note ) (V GS = 5. Vdc, I D = 7.5 Adc) I DSS V GS(th) R DS(on) Vdc mv C Adc Vdc mv C m Static DraintoSource On Resistance (Note ) (V GS = Vdc, I D = 75 Adc) (V GS = Vdc, I D = 7.5 Adc, T J = 5 C) V DS(on) Vdc Forward Transconductance (Notes & ) (V DS = Vdc, I D = Adc) g FS 58 m DYNAMIC CHARACTERISTICS (Note ) Input Capacitance C iss pf Output Capacitance (V DS = 5 Vdc, V GS =, f =. MHz) C oss 6 89 Transfer Capacitance C rss 7 SWITCHING CHARACTERISTICS (Notes & ) TurnOn Delay Time t d(on) 6 ns Rise Time (V GS = 5. Vdc, V DD = Vdc, I D = 75 Adc, t r TurnOff Delay Time R G =.7 ) (Note ) t d(off) 65 Fall Time t f 5 75 Gate Charge (V GS = 5. Vdc, I D = 75 Adc, V DS = Vdc) (Note ) SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I S = 75 Adc, V GS = Vdc) (I S = 75 Adc, V GS = Vdc, T J = 5 C) (Note ) Q T nc Q 5 Q 5 V SD Vdc Reverse Recovery Time (Note ) Reverse Recovery Stored Charge (Note ) (I S = 75 Adc, V GS = Vdc dl S /dt = A/ s) (Note ). Pulse Test: Pulse Width S, Duty Cycle %.. Switching characteristics are independent of operating junction temperatures.. From characterization test data. t rr 7 ns t a t b 7 C Q RR.
4 NTP75NL9, NTB75NL9 I D, DRAIN CURRENT (AMPS) 9 6 V GS = V V GS =.5 V V GS = 5 V V GS = 6 V V GS = 8 V V GS = V V GS =.5 V V GS = V V GS =.5 V V DS, DRAINTOSOURCE VOLTAGE (VOLTS) I D, DRAIN CURRENT (AMPS) V DS V T J = C T J = 55 C V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTO SOURCE RESISTANCE ( ) V GS = 5 V T J = C T J = 55 C R DS(on), DRAINTO SOURCE RESISTANCE ( ) V GS = 5 V.6 V GS = V I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) R DS(on), DRAINTO SOURCE RESISTANCE (NORMALIZED) Figure. OnResistance vs. Drain Current and Temperature V GS = 5. V I D = 7.5 A T J, JUNCTION TEMPERATURE ( C) Figure 5. OnResistance Variation Temperature I DSS, LEAKAGE (na) Figure. OnResistance vs. Drain Current and Gate Voltage V GS = V T J = 5 C T J = C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure 6. DraintoSource Leakage Current vs. Voltage
5 NTP75NL9, NTB75NL9 C, CAPACITANCE (pf) V GS V DS C iss C oss C rss V DS = V V GS = V GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation V GS, GATETOSOURCE VOLTAGE (V) 8 6 Q V DS Q Q T V GS I D = 75 A Q 5 6 Q g, TOTAL GATE CHARGE (nc) Figure 8. GatetoSource and DraintoSource Voltage vs. Total Charge t, TIME (ns) t r t f t d(off) t d(on) I D = 75 A V DD = 5 V V GS = 5 V I S, SOURCE CURRENT (AMPS) 75 7 V GS = V R G, GATE RESISTANCE ( ) V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure. Diode Forward Voltage vs. Current E AS, SINGLE PULSE DRAINTOSOURCE AVALANCHE ENERGY (mj) 6 I D = 75 A T J, STARTING JUNCTION TEMPERATURE ( C) Figure. Maximum Avalanche Energy vs. Starting Junction Temperature 5
6 NTP75NL9, NTB75NL9 PACKAGE DIMENSIONS TO CASE A9 ISSUE AA H Q Z L V G B N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q...5. R S T U V.5.5 Z.8. STYLE 5: PIN. GATE. DRAIN. SOURCE. DRAIN 6
7 NTP75NL9, NTB75NL9 PACKAGE DIMENSIONS D PAK CASE 8AA ISSUE O T SEATING PLANE B G S K C E V W A W J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G. BSC.5 BSC J K M.8 7. S V D PL. (.5) M T B M STYLE : PIN. GATE. DRAIN. SOURCE. DRAIN SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
8 NTP75NL9, NTB75NL9 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Phoenix, Arizona 858 USA Phone: or 886 Toll Free USA/Canada Fax: or 8867 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 55 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NTP75NL9/D
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NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
NTD20N06. Power MOSFET 20 Amps, 60 Volts, N Channel DPAK
NTDN6 Power MOSFET Amps, 6 Volts, NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower R
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
MTP23P06V. P Channel TO AMPERES, 60 VOLTS R DS(on) = 120 m
MTPP6V Preferred Device Power MOSFET Amps, 6 Volts PChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
NTP13N10G. Power MOSFET. 13 A, 100 V, N Channel Enhancement Mode TO 220
NTPN Preferred Device Power MOSFET A, V, NChannel EnhancementMode TO Features SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Avalanche Energy Specified I DSS and R DS(on)
NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
MMDFS2P102. Power MOSFET 2 Amps, 20 Volts. P Channel SO 8, FETKY. 2 AMPERES 20 VOLTS R DS(on) = 160 m V F = 0.39 Volts
MMDFS2P12 Power MOSFET 2 Amps, 2 Volts PChannel SO8, FETKY The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky
TMOS E FET. Power Field Effect Transistor MTP8N50E. N Channel Enhancement Mode Silicon Gate
TMOS E FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate MTP8N5E This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without
NTD20N06L, NTDV20N06L. Power MOSFET. 20 A, 60 V, Logic Level, N Channel DPAK/IPAK
NTDN6L, NTDVN6L Power MOSFET A, 6 V, Logic Level, NChannel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
T2P50E. P Channel D 2 PAK. 2 AMPERES, 500 VOLTS R DS(on) = 6
MTBP5E Preferred Device Power MOSFET Amps, 5 Volts PChannel D PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 60N03. Power MOSFET. 60 Amps,30Volts N-Channel DPAK. 60 AMPERES 30 VOLTS R DS(on) = 9.0 m (Typ.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6N3 Power MOSFET 6 Amps,3Volts NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor
MTB30P06V, MTBV30P06V. Power MOSFET 30 Amps, 60 Volts. P Channel D 2 PAK. 30 AMPERES, 60 VOLTS R DS(on) = 80 m
MTB3P6V, MTBV3P6V Power MOSFET 3 Amps, 6 Volts PChannel D 2 PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Volta
Power MOSFET 3 V, A, Dual NChannel SOIC Features Designed for use in low voltage, high speed switching applications Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life R DS(on) =.,
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
NTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88
NTJS5P Trench Power MOSFET V,. A, Single P Channel, ES Protected SC 88 Features Leading Trench Technology for Low R S(ON) Extending Battery Life SC 88 Small Outline (x mm, SC7 Equivalent) Gate iodes for
BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
J309, J310. N Channel Depletion. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
J39, Preferred Device JFET VHF/UHF Amplifiers NChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS 25 Vdc Gate Source Voltage V GS
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
NGTB15N60EG. IGBT - Short-Circuit Rated. 15 A, 600 V V CEsat = 1.7 V
NGTB5N6EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
Extended V GSS range ( 25V) for battery applications
Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector
Silicon Controlled Rectifiers
MCR692, MCR693 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and
NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V
NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in
MTP36N06V. Power MOSFET 32 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 40 mω
MTP36N6V Preferred Device Power MOSFET 3 Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
MTB50N06V. 42 AMPERES 60 VOLTS R DS(on) = 28 mω
MTB5N6V Preferred Device Power MOSFET Amps, 6 Volts NChannel D PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
MTD20N03HDL. Power MOSFET 20 Amps, 30 Volts, Logic Level N Channel DPAK
Preferred Device Power MOSFET 2 Amps, 3 Volts, Logic Level NChannel This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design
2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160
MTP20N06V. Power MOSFET 20 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 80 mω
MTPN6V Preferred Device Power MOSFET Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
P-Channel PowerTrench MOSFET
FDD4685-F085 P-Channel PowerTrench MOSFET -40 V, -32 A, 35 mω Features Typical R DS(on) = 23 m at V GS = -10V, I D = -8.4 A Typical R DS(on) = 30 m at V GS = -4.5V, I D = -7 A Typical Q g(tot) = 19 nc
NUD3124, SZNUD3124. Automotive Inductive Load Driver
Automotive Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling
MTB2P50E. Power MOSFET 2 Amps, 500 Volts P Channel D 2 PAK. 2 AMPERES 500 VOLTS R DS(on) = 6 Ω
MTBP5E Preferred Device Power MOSFET Amps, 5 Volts PChannel D PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance
NTMD4N03R2. Power MOSFET. 4 Amps, 30 Volts N Channel SO 8 Dual
NTMDN3R Power MOSFET Amps, 3 Volts NChannel SO Dual Features Designed for use in low voltage, high speed switching applications Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
NVMFD5C478NL. Power MOSFET. 40 V, 14.5 m, 29 A, Dual N Channel
NVMFDC478NL Power MOSFET 4 V, 4. m, 29 A, Dual N Channel Features Small Footprint ( x 6 mm) for Compact Design Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFDC478NLWF
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
MJD, MJDC (NPN), MJD, MJDC (PNP) MJDC and MJDC are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications.