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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FDP63BL/FDB63BL N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features 4 A, 3 V. R DS(ON) =.8 V GS = V R DS(ON) =.24 V GS = 4.5 V. July 2 Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low R DS(ON). FDP63BL/FDB63BL 75 C maximum junction temperature rating. D D G D S TO-22 FDP Series G S TO-263AB FDB Series G S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter FDP63BL FDB63BL Units V DSS Drain-Source Voltage 3 V V GSS Gate-Source Voltage ±2 V I D Maximum Drain Current - Continuous (Note ) 4 A - Pulsed 2 P D Total Power T C = 25 C 6 W Derate above 25 C.36 W/ C T J, T STG Operating and Storage Junction Temperature Range -65 to +75 C Thermal Characteristics Rθ JC Thermal Resistance, Junction-to-Case 2.5 C/W Rθ JA Thermal Resistance, Junction-to-Ambient 62.5 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDB63BL FDB63BL 3 24mm 8 FDP63BL FDP63BL Tube N/A 45 2 Fairchild Semiconductor International FDP63BL/FDB63BL Rev.C

3 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note ) W DSS Single Pulse Drain-Source Avalanche Energy V DD = 5 V, I D = 4 A 5 mj I AR Maximum Drain-Source Avalnche Current 4 A Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = V, I D = 25 µa 3 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 25 µa, Referenced to 25 C 23 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 24 V, V GS = V µa I GSSF I GSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse V GS = 2 V, V DS = V na V GS = -2 V, V DS = V - na FDP63BL/FDB63BL On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa.6 3 V VGS(th) T J R DS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance I D = 25 µa, Referenced to 25 C -4.5 mv/ C V GS = V, I D = 2 A, V GS = V, I D = 2 A, T J = 25 C V GS = 4.5 V,I D = 7 A I D(on) On-State Drain Current V GS = V, V DS = V 4 A g FS Forward Transconductance V DS = 5 V, I D = 2 A 3 S Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, 6 pf C oss Output Capacitance f =. MHz 25 pf Reverse Transfer Capacitance pf C rss Switching Characteristics (Note ) t d(on) Turn-On Delay Time V DD = 5 V, I D = A, 9 7 ns t r Turn-On Rise Time V GS = V, R GEN = 6 Ω 2 ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time Ω 8 6 ns Q g Total Gate Charge V DS = 5 V, 2 7 nc Q gs Gate-Source Charge I D = 2 A, V GS = 5 V 3.2 nc Gate-Drain Charge 3.7 nc Q gd Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current (Note ) 4 A V SD Drain-Source Diode Forward Voltage V GS = V, I S = 2 A (Note ).95.2 V Note:. Pulse Test: Pulse Width 3 µs, Duty Cycle 2.% FDP63BL/FDB63BL Rev.C

4 Typical Characteristics ID, DRAIN-SOURCE CURRENT (A) VGS = V 6.V 5.V 4.5V 4.V 3.5V VDS, DRAIN-SOURCE VOLTAGE (V) 3.V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 3.V 3.5V 4.V 4.5V 5.V ID, DRAIN CURRENT (A) 7.V V FDP63BL/FDB63BL Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 2A VGS = V VGS = V TJ, JUNCTION TEMPERATURE ( o C) RDS(ON), ON-RESISTANCE (OHM).6 ID = A TA = 25 o C.2. TA = 25 o C VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. ID, DRAIN CURRENT (A) VDS = 5V TA = -55 o C 25 o C VGS, GATE TO SOURCE VOLTAGE (V) 25 o C IS, REVERSE DRAIN CURRENT (A) VGS = V TA = 25 o C 25 o C. -55 o C VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP63BL/FDB63BL Rev.C

5 Typical Characteristics (continued) VGS, GATE-SOURCE VOLTAGE (V) I D = 2A V DS = 5V V 8 5V Qg, GATE CHARGE (nc) CAPACITANCE (pf) 6 f = MHz 4 VGS = V 2 CISS COSS CRSS VDS, DRAIN TO SOURCE VOLTAGE (V) FDP63BL/FDB63BL Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) VGS = V SINGLE PULSE R θjc = 2.5 o C/W T C = 25 o C R DS(ON) LIMIT µs µs ms ms ms DC POWER (W) SINGLE PULSE R θjc =2.5 C/W T C = 25 C. VDS, DRAIN-SOURCE VOLTAGE (V).., SINGLE PULSE TIME (msec) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = R θjc (t) = r(t) * R θjc.2 R θjc = 2.5 C/W...5 P(pk).5.2 t t 2.3. Single Pulse T.2 J - T = P * R (t) C θjc Duty Cycle, D = t /t2... t,time (ms) Figure. Transient Thermal Response Curve. FDP63BL/FDB63BL Rev.C

6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER ACEx Bottomless CoolFET CROSSVOLT E 2 CMOS TM FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E

7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FDP63BL