AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.

Transcription

1 AP5GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge D N-CH BV DSS V S Low On-resistance D R DS(ON) 7mΩ Surface Mount Package I D.A RoHS Compliant & Halogen-Free SOT- G SG P-CH BV DSS -V R DS(ON) 5mΩ Description I D -.A Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. D D The SOT- package is widely used for commercial-industrial applications. G S G S Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel V DS Drain-Source Voltage - V V GS Gate-Source Voltage + + V I A =5 Continuous Drain Current. -. A I A =7 Continuous Drain Current. -. A I DM Pulsed Drain Current - A P A =5 Total Power Dissipation. W Linear Derating Factor. W/ T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient /W Data and specifications subject to change without notice

2 AP5GY-HF N-CH Electrical j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =5uA - - V ΔBV DSS /ΔT j Breakdown Voltage Temperature Coefficient Reference to 5, I D =ma -. - V/ R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =A mω V GS =.5V, I D =A mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =5uA - V g fs Forward Transconductance V DS =5V, I D =A - - S I DSS Drain-Source Leakage Current V DS =V, V GS =V - - ua Drain-Source Leakage Current (T j =7 o C) V DS =V, V GS =V ua I GSS Gate-Source Leakage V GS =+V, V DS =V na Q g Total Gate Charge I D =A - 5 nc Q gs Gate-Source Charge V DS =5V - - nc Q gd Gate-Drain ("Miller") Charge V GS =.5V - - nc t d(on) Turn-on Delay Time V DS =5V - - ns t r Rise Time I D =A - - ns t d(off) Turn-off Delay Time R G =.Ω,V GS =V - - ns t f Fall Time R D =5Ω - - ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V DS =5V pf C rss Reverse Transfer Capacitance f=.mhz pf R g Gate Resistance f=.mhz -.5. Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units V SD Forward On Voltage I S =.9A, V GS =V - -. V t rr Reverse Recovery Time I S =A, V GS =V - - ns Q rr Reverse Recovery Charge di/dt=a/µs nc

3 AP5GY-HF P-CH Electrical j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =V, I D =-5uA V ΔBV DSS /ΔT j Breakdown Voltage Temperature Coefficient Reference to 5, I D =-ma -. - V/ R DS(ON) Static Drain-Source On-Resistance V GS =-V, I D =-A mω V GS =-.5V, I D =-A - - mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =-5uA V g fs Forward Transconductance V DS =-5V, I D =-A - - S I DSS Drain-Source Leakage Current V DS =-V, V GS =V ua Drain-Source Leakage Current (T j =7 o C) V DS =-V,V GS =V ua I GSS Gate-Source Leakage V GS =+V, V DS =V na Q g Total Gate Charge I D =-A - 5 nc Q gs Gate-Source Charge V DS =-5V - - nc Q gd Gate-Drain ("Miller") Charge V GS =-.5V - - nc t d(on) Turn-on Delay Time V DS =-5V - - ns t r Rise Time I D =-A - - ns t d(off) Turn-off Delay Time R G =.Ω,V GS =-5V ns t f Fall Time R D =5Ω - - ns C iss Input Capacitance V GS =V - 5 pf C oss Output Capacitance V DS =-5V pf C rss Reverse Transfer Capacitance f=.mhz - - pf R g Gate Resistance f=.mhz - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit V SD Forward On Voltage I S =-.9A, V GS =V V t rr Reverse Recovery Time I S =A, V GS =V, ns Q rr Reverse Recovery Charge di/dt=a/µs nc Notes:.Pulse width limited by Max. junction temperature..pulse test.surface mounted on in copper pad of FR board, t<5sec ; /W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

4 AP5GY-HF N-Channel I D, Drain Current (A) T A =5 o C V 7. V 5. V.5 V V G =. V I D, Drain Current (A) T A = 5 o C V 7. V 5. V.5 V V G =. V Fig. Typical Output Characteristics Fig. Typical Output Characteristics 7. R DS(ON) (mω) 9 I D =A T A =5 o C Normalized R DS(ON).. I D =A V G =V 5 V GS, Gate-to-Source Voltage (V) Fig. On-Resistance v.s. Gate Voltage Fig. Normalized On-Resistance v.s. Junction Temperature. I S (A) T j =5 o C T j =5 o C Normalized V GS(th) (V) V SD, Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Fig. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature

5 N-Channel AP5GY-HF f=.mhz V GS, Gate to Source Voltage (V) 9 I D =A V DS =5V C (pf) C iss C oss C rss 5 Q G, Total Gate Charge (nc) Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics I D (A). Operation in this area limited by R DS(ON) T A =5 o C us ms ms ms s DC Normalized Thermal Response (R thja ).. Duty factor= PDM t T Duty factor = t/t Peak T j = P DM x R thja + T a R thja = /W t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig. Effective Transient Thermal Impedance V DS =5V V G I D, Drain Current (A) T j =5 o C T j =5 o C.5V Q GS Q G Q GD V GS, Gate-to-Source Voltage (V) Fig. Transfer Characteristics Charge Fig. Gate Charge Waveform Q 5

6 AP5GY-HF P-Channel -I D, Drain Current (A) T A =5 o C -V - 7. V - 5. V -.5 V V G = -. V -I D, Drain Current (A) T A = 5 o C -V - 7. V - 5. V -.5 V V G = -. V - - Fig. Typical Output Characteristics Fig. Typical Output Characteristics I D =-A T A =5 o C.5 I D =-A V G = - V R DS(ON) (mω) Normalized R DS(ON)..9 -V GS, Gate-to-Source Voltage (V) Fig. On-Resistance v.s. Gate Voltage Fig. Normalized On-Resistance v.s. Junction Temperature.. -I S (A).5..5 T j =5 o C T j =5 o C Normalized -V GS(th) (V) V SD, Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Fig. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature

7 P-Channel AP5GY-HF f=.mhz -V GS, Gate to Source Voltage (V) 9 I D =-A V DS =-5V C (pf) C iss C oss C rss 5 Q G, Total Gate Charge (nc) Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics Duty factor=.5 -I D (A). Operation in this area limited by R DS(ON) T A =5 o C us ms ms ms s DC Normalized Thermal Response (Rthja) P DM t T Duty factor = t/t Peak T j = P DM x R thja + T a R thja = /W t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig. Effective Transient Thermal Impedance V DS =-5V V G -I D, Drain Current (A) T j =5 o C T j =5 o C.5V Q GS Q G Q GD -V GS, Gate-to-Source Voltage (V) Charge Q Fig. Transfer Characteristics Fig. Gate Charge Waveform 7