Green. Features. I D T C = +25 C (Note 9) 100A 100A. Top View Pin Configuration
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1 Product Summary Green 4V N-CHANNEL ENHANCEMENT MOE MOSFET POWERI Features % Unclamped Inductive Switching Ensures More Reliable BV SS 4V R S(ON) V GS = V V GS = 4.5V I T C = +5 C (Note 9) A A and Robust End Application Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low R S(ON) Minimizes On State Losses <.mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes & ) Halogen and Antimony Free. Green evice (Note 3) escription and Applications This MOSFET has been designed to minimize the on-state resistance (R S(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Engine Management Systems Body Control Electronics C-C Converters Mechanical ata Case: PowerI56-8 (Type K) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-ST- Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-ST-, Method 8 Weight:.97 grams (Approximate) PowerI56-8 (Type K) S S S G Top View Pin Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging -3 PowerI56-8 (Type K),5 / Tape & Reel Notes:. EU irective /95/EC (RoHS) & /65/EU (RoHS ) compliant. All applicable RoHS exemptions applied.. See for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information T4LS YY WW = Manufacturer s Marking T4LS = Product Type Marking Code YYWW = ate Code Marking YY = Last Two igits of Year (ex: 6 = 6) WW = Week Code ( to 53) S S S G PowerI is a registered trademark of iodes Incorporated. ocument number: S3897 Rev. - of 7 August 6 iodes Incorporated
2 Maximum Ratings A = +5 C, unless otherwise specified.) Characteristic Symbol Value Units rain-source Voltage V SS 4 V Gate-Source Voltage V GSS ± V Continuous rain Current, V GS = V (Notes 6, 9) T C = +5 C I T C = +7 C A Pulsed rain Current (μs pulse, duty cycle = %) I M A Continuous Body iode Forward Current (Note 6) T C = +5 C I S 85 A Avalanche Current, L =.mh I AS 48 A Avalanche Energy, L =.mh E AS 5 mj Thermal Characteristics Characteristic Symbol Value Units Total Power issipation (Note 5) P.3 W Thermal Resistance, Junction to Ambient (Note 5) R JA 55 C/W Total Power issipation (Note 6) P 4 W Thermal Resistance, Junction to Case (Note 6) R JC. C/W Operating and Storage Temperature Range T J, T STG -55 to +5 C Electrical Characteristics (@T A = +5 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) rain-source Breakdown Voltage BV SS 4 V V GS = V, I = 5µA Zero Gate Voltage rain Current I SS µa V S = 3V, V GS = V Gate-Source Leakage I GSS ± na V GS = ±V, V S = V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V GS(TH) 3 V V S = V GS, I = 5µA Static rain-source On-Resistance R S(ON).3.8 V GS = V, I = 5A mω 3. V GS = 4.5V, I = 5A iode Forward Voltage V S. V V GS = V, I S = A YNAMIC CHARACTERISTICS (Note 8) Input Capacitance C iss 677 V pf S = V, V GS = V, Output Capacitance C oss 65 f = MHz Reverse Transfer Capacitance C rss 76 Gate Resistance R G.85 Ω V S = V, V GS = V, f = MHz Total Gate Charge (V GS = V) Q g 6. Total Gate Charge (V GS = 4.5V) Q g 55. V nc = V, I = 5A, Gate-Source Charge Q gs.3 Gate-rain Charge Q gd.7 Turn-On elay Time t (ON).4 Turn-On Rise Time t R.9 V ns = V, V GS = V, Turn-Off elay Time t (OFF) 6.5 I = 5A, R G = 3Ω Turn-Off Fall Time t F 8 Reverse Recovery Time t RR 58.6 ns I F = 5A, di/dt = A/μs Reverse Recovery Charge Q RR 7 nc Notes: 5. evice mounted on FR-4 substrate PC board, oz copper, with thermal bias to bottom layer inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. PowerI is a registered trademark of iodes Incorporated. ocument number: S3897 Rev. - of 7 August 6 iodes Incorporated
3 R S(ON), RAIN-SOURCE ON-RESISTANCE (m) R S(ON), RAIN-SOURCE ON-RESISTANCE (NORMALIZE) R S(ON), RAIN-SOURCE ON-RESISTANCE (m) R S(ON), RAIN-SOURCE ON-RESISTANCE (m) I, RAIN CURRENT (A) I, RAIN CURRENT (A) V GS = 3.5V V GS = 4.V 3 5 V S = 5.V V GS = 4.5V V GS = V V GS = 3.V V GS =.5V V S, RAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic 5 5 T J = 5 o C T J = 5 o C T J = 85 o C T J = 5 o C T J = -55 o C V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic.5 4. V GS = 4.5V 3 I = 5A.5. V GS = V I, RAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs rain Current and Gate Voltage V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 3.5 V GS = V T J = 5 o C T J = 5 o C V GS = V, I = 5A.5 T J = 85 o C. T J = 5 o C V GS = 4.5V, I = 5A T J = -55 o C I, RAIN CURRENT (A) Figure 5. Typical On-Resistance vs rain Current and Temperature T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Temperature PowerI is a registered trademark of iodes Incorporated. ocument number: S3897 Rev. - 3 of 7 August 6 iodes Incorporated
4 V GS (V) I, RAIN CURRENT (A) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R S(ON), RAIN-SOURCE ON-RESISTANCE () V GS(TH), GATE THRESHOL VOLTAGE (V) V GS = 4.5V, I = 5A I = ma..5 I = 5µA. V GS = V, I = 5A T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Temperature V GS = V T J, JUNCTION TEMPERATURE ( ) Figure 8 Gate Threshold Variation vs Junction Temperature C iss f = MHz 5 C oss 5 T J = 5 o C T J = 5 o C T J = 85 o C T J = 5 o C T J = -55 o C V S, SOURCE-RAIN VOLTAGE (V) Figure 9. iode Forward Voltage vs Current C rss V S, RAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance R S(ON) Limited 8 6 P W = s P W = ms P W = ms 4 P W = ms V S = V, I = 5A Q g (nc) Figure. Gate Charge. T J(Max) = 5 P W = µs T C = 5 P W = µs Single Pulse UT on Infinite Heatsink P W = µs V GS = V. V S, RAIN-SOURCE VOLTAGE (V) Figure. SOA, Safe Operation Area PowerI is a registered trademark of iodes Incorporated. ocument number: S3897 Rev. - 4 of 7 August 6 iodes Incorporated
5 r(t), TRANSIENT THERMAL RESISTANCE =.9 =.5 =.7 =.3. =. =.5. =. =. =.5 =Single Pulse R θjc (t) = r(t) * R θjc R θjc =.3 /W uty Cycle, = t/t. E-6 E t, PULSE URATION TIME (sec) Figure 3. Transient Thermal Resistance PowerI is a registered trademark of iodes Incorporated. ocument number: S3897 Rev. - 5 of 7 August 6 iodes Incorporated
6 Package Outline imensions Please see for the latest version. PowerI56-8 (Type K) x c E E y C Ø. epth.7±.3 b(8x) b(8x) e/ L k b(x) L4 E M La L e (4x) ETAIL A (4x) A Seating Plane A ETAIL A PowerI56-8 (Type K) im Min Max Typ A.9.. A.5. b b b c BSC E 6.5 BSC E E E.7BSC k L La L L M x y θ θ All imensions in mm Suggested Pad Layout Please see for the latest version. PowerI56-8 (Type K) X Y G X Y Y3 imensions Value (in mm) C.7 G.66 G.8 X.6 X 3.9 X 4.4 Y.7 Y. Y 3.8 Y3 6.6 Y C G X (8x) PowerI is a registered trademark of iodes Incorporated. ocument number: S3897 Rev. - 6 of 7 August 6 iodes Incorporated
7 IMPORTANT NOTICE IOES INCORPORATE MAKES NO WARRANTY OF ANY KIN, EXPRESS OR IMPLIE, WITH REGARS TO THIS OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WARRANTIES OF MERCHANTABILITY AN FITNESS FOR A PARTICULAR PURPOSE (AN THEIR EQUIVALENTS UNER THE LAWS OF ANY JURISICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright 6, iodes Incorporated PowerI is a registered trademark of iodes Incorporated. ocument number: S3897 Rev. - 7 of 7 August 6 iodes Incorporated
Green. Pin1. Top View Pin Configuration. Part Number Case Packaging DMTH3004LPS-13 POWERDI ,500/Tape & Reel
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Green 3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa),000 3.0 5 Features and Benefits Glass Passivated Die Construction Miniature Package
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Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationPART OBSOLETE - NO ALTERNATE PART Green. Features DO-214AA
Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationADC114YUQ. Mechanical Data. Features. Ordering Information (Notes 4 & 5) Marking Information NXX 1Y7 YM NXX YM
NXX YM NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes &
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More informationNOT RECOMMENDED FOR NEW DESIGN USE DMN65D8L
NOT RECOMMENDED FOR NEW DESIGN USE DMN6D8L N7X N-CHNNEL ENHNCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS R DS(ON) max I D max T = + C 6V 6Ω @ V = V m Description This MOSFET has been
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationRDBF31-RDBF310. Product Summary A = +25 C) Features and Benefits ADVANCED INFORMATION NEW PRODUCT. Description and Applications.
Green 3.0A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V FM (V) I R (μa) 00,800,600, 400,200,0 3.0.3 5 Description and Applications Suitable for
More informationApplications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
More informationZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
More informationDevice Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
More informationFeatures TO-220F-3 TO (2) TO-263-2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationFeatures. Top View Pin-Out
40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
More informationFeatures. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
More informationFeatures DO-41 DO-15 DO-214AC
SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationFeatures DO-15 DO-214AC SOD-123
SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures and Benefits. Product Summary. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information D28V0H1U2P5Q
Green 800W SURFCE MOUNT TRNSIENT VOLTGE SUPPRESSOR Product Summary V RWM V BR Min I PPM Max 28V 3V 4 Features and Benefits Uni-directional polarity Low profile thermally efficient package Compliant with
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationFeatures DNC GND GND GND GATE GATE. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3108N8TC ZXGD ,500
V ACTIVE OR'ING MOSFET CONTROLLER IN SO8 Description is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationCase Material: Molded Plastic, Green Molding Compound; Low Leakage Current. UL Flammability Classification Rating 94V-0 Low Capacitance
DVNCED INFORMTION SURFCE MOUNT SWITCHING DIODE RRY Features Mechanical Data Fast Switching Speed Case: High Reverse Breakdown Voltage Case Material: Molded Plastic, Green Molding Compound; Low Leakage
More informationZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
More informationFDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET
FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationFeatures. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DM SO-7 Standard BF ,000/Tape & Reel
2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
More informationFeatures SO-7. Typical Configuration for Low-Side -ve Supply Rail DRAIN. Top View
V ACTIVE OR'ING MOSFET CONTROLLER IN SO7 Description The is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationGreen D-FLAT. Top View. Part Number Compliance Case Packaging RS1MDFQ-13 Automotive D-FLAT 10,000/Tape & Reel
DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
More informationPART OBSOLETE - USE ZXGD3111N7. Features. GND GND Vcc GATE. GATE Top View Pin-Out
PART OBSOLETE - USE N7 V ACTIVE OR-ING MOSFET CONTROLLER IN SO8 Description is a V Active OR-ing MOSFET controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces
More informationGreen D-FLAT. Top View. Part Number Compliance Case Packaging RS1MDF-13 AEC-Q101 D-FLAT 10,000/Tape & Reel
DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
More informationGreen SOD123F. Date Code Key Year Code C D E F G H I J
DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
More informationGreen SMC. Top View Bottom View. Part Number Compliance Case Packaging B5X0CQ-13-F Automotive SMC 3,000/Tape & Reel
Green 5. SURFCE MOUNT SCHOTTKY BRRIER RECTIFIER Product Summary B52CQ/B53CQ/B54CQ V RRM (V) I O () V F Max (V) I R Max (m) 2/3/4 5..55.5 B55CQ/B56CQ V RRM (V) I O () V F Max (V) I R Max (m) 5/6 5..7.5
More informationZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
More informationV-DFN Pin1. Part Number Case Packaging DML1005LDS-7 V-DFN ,000/Tape & Reel
SINGLE CHANNEL SMART LOAD SWITCH Description and Applications The is a single channel load switch with very low onresistance in a small package. It contains an N-channel MOSFET for up to V BIAS-1.5V input
More informationZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3A0N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 30V 3.9nC 25m @ = 0V 2.7A 80m @ = 4. 2.2A
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3104N8TC ZXGD ,500
SYNCHRONOUS MOSFET CONTROLLER IN SO8 Description The ZXGD3104 is intended to drive MOSFETs configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and
More informationGreen. Features. TO220AB Bottom View. Part Number Case Packaging SDT20B100CT TO220AB 50 Pieces/Tube
Green 20 TRENCH SCHOTTKY RECTIFIER Product Summary (Per Leg) V V RRM (V) I O () F Max (V) I R Max (µ) @ +25 C @ +25 C 0 0.80 0 Description and pplications Features Low Forward Voltage Drop Excellent High
More informationApplications. Tape and Reel Device Qualification Packaging AL5802LP4 Commercial X2-DFN ,000/Tape & Reel -7
Description The combines a high-gain NPN transistor with a pre-biased NPN transistor to make a simple small footprint LED driver. 30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER Pin Assignments The LED
More informationDZTA42. Features. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 DZTA42
3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully
More informationG S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from
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YWW NEW PRODUT 500V PNP HIGH PERFORMANE TRANSISTOR IN Features BV EO > -500V I = -150mA High ontinuous urrent I M = -500mA Peak Pulse urrent Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen
More informationG S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs
More informationPart Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
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NTMFS4HN Power MOSFET V, 334 A, Single N Channel, SO 8FL Features Optimized esign to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for
More informationG S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs
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Power MOSFET 6 V, 24 m, 2 A, Single N Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS5826NLWF
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QUADRUPLE 2-INPUT AND GATES Description Pin Assignments The provides four independent 2-input AND gates. The device is designed for operation with a power supply range of 1.65V to 5.5V. The inputs are
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NTMFSC64NL Power MOSFET 6 V,. m, 76 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These
More informationG S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -1V Surface Mount evice R S(ON) mω G RoHS-compliant, halogen-free I -A S SS escription Advanced Power MOSFETs
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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Power MOSFET V, A, m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTFS5PLWF Wettable
More informationFMMT491Q. Mechanical Data. Description. Feature. Ordering Information (Notes 4 & 5) Marking Information 60V NPN MEDIUM POWER TRANSISTOR IN SOT23
60V NPN MEDIUM POWER TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BV EO > 60V = 1A
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Power MOSFET 6 V, 4 A, 52 m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS56PLWF Wettable
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