I D T A = 25 C -2.8A -2.3A. Part Number Case Packaging DMG6602SVT-7 TSOT / Tape & Reel
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1 DMGSVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V (BR)DSS R DS(on) Q 3V Q -3V I D V GS = V 3.A V GS =.5V.7A V GS = -V V GS = -.5V Description and Applications -.A -.3A This new generation MOSFET has been designed to minimize the onstate resistance (R DS(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting DC-DC Converters Power management functions Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free Finish; RoHS compliant (Note ) Halogen and Antimony Free. Green Device (Note ) Qualified to AEC-Q Standards for High Reliability Mechanical Data Case: TSOT Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 9V- Moisture Sensitivity: Level per J-STD- Terminals Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-, Method Weight:.3 grams (approximate) TSOT Q D Q D G D G G S 5 S G 3 D S S Top View Top View N-Channel P-Channel Ordering Information (Note 3) Part Number Case Packaging DMGSVT-7 TSOT 3 / Tape & Reel Notes:. EU Directive /95/EC (RoHS) & /5/EU (RoHS ) compliant. All applicable RoHS exemptions applied.. Halogen and Antimony free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 3. For packaging details, go to our website at Marking Information C YM C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = ) M = Month (ex: 9 = September) Date Code Key Year Code X Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code O N D DMGSVT Document number: DS35 Rev. - of May
2 DMGSVT Maximum Ratings = 5 C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage V DSS 3 V Gate-Source Voltage V GSS ± V Continuous Drain Current (Note 5) V GS = V Steady 3. I State D T A = 7 C.7 A Continuous Drain Current (Note 5) V GS =.5V Steady.7 I State D T A = 7 C. A Maximum Continuous Body Diode Forward Current (Note 5) IS.5 A Pulsed Drain Current (Note 5) I DM 5 A Maximum Ratings = 5 C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage V DSS -3 V Gate-Source Voltage V GSS ± V Continuous Drain Current (Note 5) V GS = -V Steady -. I State D T A = 7 C -. A Continuous Drain Current (Note 5) V GS = -.5V Steady -.3 I State D T A = 7 C -. A Maximum Continuous Body Diode Forward Current (Note 5) IS -.5 A Pulsed Drain Current (Note 5) I D - A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note ). P D T A = 7 C.5 W Thermal Resistance, Junction to Ambient (Note ) Steady state 55 R t<s θja 9 C/W Total Power Dissipation (Note 5).7 P D T A = 7 C. W Thermal Resistance, Junction to Ambient (Note 5) Steady state R t<s θja 7 C/W Thermal Resistance, Junction to Case (Note 5) R θjc 3 Operating and Storage Temperature Range T J, T STG -55 to +5 C Notes:. Device mounted on FR- substrate PC board, oz copper, with minimum recommended pad layout. 5. Device mounted on FR- substrate PC board, oz copper, with inch square copper plate. DMGSVT Document number: DS35 Rev. - of May
3 DMGSVT Electrical Characteristics Q NMOS@ unless otherwise stated Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note ) Drain-Source Breakdown Voltage BV DSS V V GS = V, I D = 5μA Zero Gate Voltage Drain Current I DSS - -. µa V DS = V, V GS = V Gate-Source Leakage I GSS - - ± na V GS = ±V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(th). -.3 V V DS = V GS, I D = 5μA Static Drain-Source On-Resistance R DS (ON) mω V GS = V, I D = 3.A V GS =.5V, I D = A Forward Transfer Admittance Y fs - - S V DS = 5V, I D = 3.A Diode Forward Voltage V SD -. V V GS = V, I S = A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss - 9 V pf DS = 5V, V GS = V, Output Capacitance C oss - f =.MHz Reverse Transfer Capacitance C rss - Gate Resistance R g -. - Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS =.5V) Q g - V DS = 5V, V GS =.5V, I D = 3.A Total Gate Charge (V GS = V) Q g nc Gate-Source Charge Q gs -. - V DS = 5V, V GS = V, I D = 3A Gate-Drain Charge Q gd Turn-On Delay Time t D(on) Turn-On Rise Time t r Turn-Off Delay Time t D(off) Turn-Off Fall Time t f Notes:. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. ns V GS = V, V DS = 5V, R G = 3Ω, R L =.7Ω. V = 5.V DS I D, DRAIN CURRENT (A).... I D, DRAIN CURRENT (A) V DS, DRAIN -SOURCE VOLTAGE(V) Fig. Typical Output Characteristics 3 5 V GS, GATE SOURCE VOLTAGE(V) Fig. Typical Transfer Characteristics DMGSVT Document number: DS35 Rev. - 3 of May
4 DMGSVT R DS(ON),DRAIN-SOURCE ON-RESISTANCE( Ω ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized). R DS(ON) ( Ω) V G=.5V R DS(ON) ( Ω) V G=V. I D, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage Fig. 5 On-Resistance Variation with Temperature R DS(ON), DRAIN-SOURCE ON-RESISTANCE( Ω ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE V =.5V GS Ave R DS(ON) ( Ω 5 C Ave R DS(ON) ( Ω 5 C Ave R DS(ON) ( Ω 5 C Ave R DS(ON) ( Ω 5 C Ave R DS(ON) ( Ω -55 C I D, DRAIN SOURCE CURRENT (A) Fig. Typical On-Resistance vs. Drain Current and Temperature Fig. On-Resistance Variation with Temperature. V GS(th), GATE THRESHOLD VOLTAGE (V)..... I D= 5μA I = ma D I, SOURCE CURRENT (A) S V V DS=V T A = 5 C Fig. 7 Gate Threshold Variation vs. Ambient Temperature V SD, SOURCE-DRAIN VOLTAGE (V) Fig. Diode Forward Voltage vs. Current DMGSVT Document number: DS35 Rev. - of May
5 DMGSVT f = MHz C T, JUNCTION CAPACITANCE (pf) I D, DRAIN CURRENT (A) COSS Ave (pf) CISS Ave (pf) CRSS Ave (pf) V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance RDS(on) Limited P = µs W DC P W = s P W = s P W = ms P W = ms. T = 5 C P J(max) W = ms V GS = V Single Pulse DUT on * MRP Board.. V DS, DRAIN-SOURCE VOLTAGE (V) Fig. SOA, Safe Operation Area V GS GATE THRESHOLD VOLTAGE (V) V DS = V I D = 3.A Q g, TOTAL GATE CHARGE (nc) Fig. Gate Charge DMGSVT Document number: DS35 Rev. - 5 of May
6 DMGSVT Electrical Characteristics Q PMOS@ unless otherwise stated Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note ) Drain-Source Breakdown Voltage BV DSS V V GS = V, I D = -5μA Zero Gate Voltage Drain Current I DSS µa V DS = -V, V GS = V Gate-Source Leakage I GSS - - ± na V GS = ±V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(th) V V DS = V GS, I D = -5μA Static Drain-Source On-Resistance R DS (ON) mω V GS = -V, I D = -.7A V GS = -.5V, I D = -A Forward Transfer Admittance Y fs - - S V DS = -5V, I D = -.7A Diode Forward Voltage V SD V V GS = V, I S = -A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss - 35 V pf DS = -5V, V GS = V, Output Capacitance C oss - 5 f =.MHz Reverse Transfer Capacitance C rss - 5 Gate Resistance R g Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = -.5V) Q g - V DS = -5V, V GS = -.5V, I D = -3A Total Gate Charge (V GS = -V) Q g nc Gate-Source Charge Q gs V DS = -5V, V GS = -V, I D = -3A Gate-Drain Charge Q gd -. - Turn-On Delay Time t D(on) -. - Turn-On Rise Time t r Turn-Off Delay Time t D(off) - - Turn-Off Fall Time t f Notes:. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. ns V GS = -V, V DS = -5V, R G = Ω, R L = 5Ω. I D, DRAIN CURRENT... I D, DRAIN CURRENT (A) V DS, DRAIN -SOURCE VOLTAGE(V) Fig. Typical Output Characteristics V GS, GATE SOURCE VOLTAGE(V) Fig. 3 Typical Transfer Characteristics DMGSVT Document number: DS35 Rev. - of May
7 DMGSVT R DS(ON),DRAIN-SOURCE ON-RESISTANCE( Ω ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) R DS(ON) ( Ω) V G=.5V R DS(ON) ( Ω) V G=.5V.5 R DS(ON) ( Ω) V G=V I D, DRAIN SOURCE CURRENT Fig. Typical On-Resistance vs. Drain Current and Gate Voltage I D, DRAIN SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature Fig. On-Resistance Variation with Temperature R DS(ON), DRAIN-SOURCE ON-RESISTANCE( Ω ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω ) V =.5V GS Ave R DS(ON) ( Ω 5 C Ave R DS(ON) ( Ω 5 C Ave R DS(ON) ( Ω 5 C Ave R DS(ON) ( Ω 5 C Ave R DS(ON) ( Ω -55 C Fig. 7 On-Resistance Variation with Temperature V GS(TH), GATE THRESHOLD VOLTAGE (V).... I, SOURCE CURRENT (V) S Fig. Gate Threshold Variation vs. Ambient Temperature V SD, SOURCE -DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current DMGSVT Document number: DS35 Rev. - 7 of May
8 DMGSVT C T, JUNCTION CAPACITANCE (pf) -I D, DRAIN CURRENT (A) C Ave(pF) ISS C Ave(pF) RSS f = MHz C Ave(pF) OSS V DS, DRAIN-SOURCE VOLTAGE (V) Fig. Typical Junction Capacitance RDS(on) Limited P = µs W DC P W = s P W = s P W = ms P. W = ms T J(max) = 5 C P W = ms V GS = -V Single Pulse DUT on * MRP Board.. -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. SOA, Safe Operation Area -V GS GATE THRESHOLD VOLTAGE (V) V DS = -5 I D = -3A Q g, TOTAL GATE CHARGE (nc) Fig. Gate Charge r(t), TRANSIENT THERMAL RESISTANCE. D =.. D =.7 D =.5 D =.3 D =.5 D =. D =. D =.9 D =.5 R θja(t) = r(t) * RθJA R θja = C/W Single Pulse Duty Cycle, D = t/ t t, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance DMGSVT Document number: DS35 Rev. - of May
9 DMGSVT Package Outline Dimensions D e E e A A A Suggested Pad Layout x b E x θ L c θ L TSOT Dim Min Max Typ A. A.. A..9 D.9 E. E. b.3.5 c.. e.95 e.9 L.3.5 L.5 θ θ All Dimensions in mm C C Y Y (x) Dimensions Value (in mm) C.95 X.7 Y. Y 3.99 X (x) DMGSVT Document number: DS35 Rev. - 9 of May
10 DMGSVT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright, Diodes Incorporated DMGSVT Document number: DS35 Rev. - of May
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A Product Line of Diodes Incorporated ZXMHC3A0N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 30V 3.9nC 25m @ = 0V 2.7A 80m @ = 4. 2.2A
More informationZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
More informationGreen. Case Material: Molded Plastic. UL Flammability Classification 3.3V - 200V Nominal Zener Voltage Range
Green 3.W SURFACE MOUNT POWER ENER DIODE Features Mechanical Data 3.W Power Dissipation Case: SMB Ideally Suited for Automated Assembly Case Material: Molded Plastic. UL Flammability Classification 3.3V
More informationGreen SMC. Top View Bottom View. Part Number Case Packaging B5XXCE-13 SMC 3,000/Tape & Reel
Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary B520CE/B530CE/B540CE V RRM (V) I O (A) V F Max (V) I R Max (ma) 20 5.0 0.55 0.2 30 5.0 0.55 0.2 40 5.0 0.55 0.2 Features and Benefits
More informationFeatures. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
More informationDMNH6021SPDQ. Product Summary. Features and Benefits ADVANCE INFORMATION ADVANCED INFORMATION. Description and Applications.
DVNCE INFORMTION DVNCED INFORMTION Product Summary V (BR)DSS 6V R DS(ON) Max 2mΩ @ V = V 4mΩ @ V = 4.V I D Max T C = +2 C 32 2 6V 7 C DUL N-CHNNEL ENHNCEMENT MODE MOSFET PowerDI Features and Benefits Rated
More informationGreen. Top View Pin Diagram Internal Schematic. Part Number Case Packaging MSB12M-13 MSB 3,000/Tape & Reel
Green.2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (µa),000.2. 5 Features and Benefits Glass Passivated Die Construction Compact, Thin
More informationRDBF31-RDBF310. Product Summary A = +25 C) Features and Benefits ADVANCED INFORMATION NEW PRODUCT. Description and Applications.
Green 3.0A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V FM (V) I R (μa) 00,800,600, 400,200,0 3.0.3 5 Description and Applications Suitable for
More informationGreen. Bottom View. Top View. Part Number Compliance Case Packaging SDT3A45SA-13 Commercial SMA 5,000/Tape & Reel
Green 3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA Product Summary (@ T A = +25 C ) V RRM (V) I O (A) V F(MAX) (mv) I R(MAX) (µa) 45 3 480 280 Features and Benefits Low Leakage Current Soft, Fast Switching
More informationGreen T-DFN Part Number Compliance Case Packaging LBS10-13 Commercial T-DFN ,000/Tape & Reel
Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
More informationFeatures. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DM SO-7 Standard BF ,000/Tape & Reel
2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
More informationGreen. Part Number Qualification Case Packaging P4SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MSB30M-13 Commercial MSBL 2,500/Tape & Reel
Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD65T50S1PT DGTD65T50S1 450 per Box in Tubes (Note 5)
650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationCase Material: Molded Plastic, Green Molding Compound; Low Leakage Current. UL Flammability Classification Rating 94V-0 Low Capacitance
DVNCED INFORMTION SURFCE MOUNT SWITCHING DIODE RRY Features Mechanical Data Fast Switching Speed Case: High Reverse Breakdown Voltage Case Material: Molded Plastic, Green Molding Compound; Low Leakage
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS 20 V V GS = 4.5V 33 R DS(on) (max) V GS = 2.5V 40 V GS = 1.8V 51 mω Q g 11 nc Features Advance Trench
More informationPart Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
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SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 14 @ V GS = -10V -11-30 20 @ V GS = -4.5V -8.5 Features Advance
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TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE
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TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
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TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationGreen SOD123F. Date Code Key Year Code C D E F G H I J
DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
More informationGreen. PowerDI123. Top View. Part Number Compliance Case Packaging DFLS260Q-7 Automotive PowerDI /Tape & Reel
Green 2.A SURFAE MOUNT SHOTTKY BARRIER RETIFIER POWERDI 123 Product Summary V R (V) I F (A) V F MAX (V) @ +25 I R MAX (ma) @ +25 6 2..62.1 Description and Applications This Schottky Barrier Rectifier has
More informationPart Number Case Packaging DMN2024U-7 SOT /Tape & Reel DMN2024U-13 SOT23 10,000/Tape & Reel
N-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits VNCE INFORMTION V (BR)SS 2V R S(ON) Max I Max T = +25 C 25mΩ @ V = 4.5V 6.8 29mΩ @ V = 2.5V 5.5 escription and pplications This MOSFET
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
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TSM65N5CS N-Channel Power MOSFET 5V, 9A, 65mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
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MC24UV COMPLEMENTRY PIR ENHNCEMENT MOE MOSFET Product Summary evice V (BR)SS R S(ON) max Q 2V Q2-2V I max T = 25 C.5Ω @ V = 4.5V 3m.9Ω @ V =.8V 74m.Ω @ V = -4.5V -7m 2.Ω @ V = -.8V -46m escription and
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
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40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
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TSM5P4LCS P-Channel Power MOSFET -4V, -22A, 5mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
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TSM38N4LCP N-Channel Power MOSFET 4V, 35A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
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Product ummary Green 4V N-CHANNEL ENHANCEMENT MOE MOFET POWERI Features BV 4V R (ON) Max 2.5mΩ @ V G = V 4mΩ @ V G = 4.5V I T C = +25 C 9A 9A % Unclamped Inductive witching ensures more reliable and robust
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS = -10V 95 R DS(on) (max) mω V GS = -4.5V 140 Q g 10 nc Features Advance Trench Process Technology
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Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
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More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
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Dual P-Channel MOSFET -60V, -12A, 68mΩ FEATURES Fast switching Low thermal resistance package Low profile package Pb-free plating RoHS compliant Halogen-free package KEY PERFORMANCE PARAMETERS PARAMETER
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
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HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
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45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A
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HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
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HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
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HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
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Green 5. SURFCE MOUNT SCHOTTKY BRRIER RECTIFIER Product Summary B52CQ/B53CQ/B54CQ V RRM (V) I O () V F Max (V) I R Max (m) 2/3/4 5..55.5 B55CQ/B56CQ V RRM (V) I O () V F Max (V) I R Max (m) 5/6 5..7.5
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Green 800W SURFCE MOUNT TRNSIENT VOLTGE SUPPRESSOR Product Summary V RWM V BR Min I PPM Max 28V 3V 4 Features and Benefits Uni-directional polarity Low profile thermally efficient package Compliant with
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS =-4.5V -3.2-20 80 @ V GS =-2.5V -2.7 130 @ V GS =-1.8V -2.0 Features Advance Trench Process Technology
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