Features -3.1A -2.0A. Pin Configuration

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1 DMC238LVT COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Features Device V (BR)DSS R DS(ON) Q 2V Q2-2V Description V GS = 4.5V 4.5 V GS =.8V 3.5 V GS = -4.5V V GS = -.8V This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. pplications Motor Control Power Management Functions DC-DC Converters Backlighting Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and ntimony Free. Green Device (Note 3) Qualified to EC-Q standards for High Reliability Mechanical Data Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD-2 Terminals Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-22, Method 28 Terminal Connections Indicator: See diagram Weight:.3 grams (approximate) TSOT26 Q D Q2 D2 G 6 D S2 2 5 S G G2 G2 3 4 D2 Top View Top View Pin Configuration S N-Channel S2 P-Channel Ordering Information (Note 4) Part Number Compliance Case Packaging DMC238LVT-7 Standard TSOT26 3/Tape & Reel DMC238LVTQ-7 utomotive TSOT26 3/Tape & Reel Notes:. No purposely added lead. Fully EU Directive 22/95/EC (RoHS) & 2/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information 3C YM 3C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2) M = Month (ex: 9 = September) Date Code Key Year Code X Y Z B C D Month Jan Feb Mar pr May Jun Jul ug Sep Oct Nov Dec Code O N D DMC238LVT of September 23

2 DMC238LVT Maximum Ratings N-CHNNEL Q (@, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS 2 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current (Note 5) V GS = 4.5V Continuous Drain Current (Note 6) V GS = 4.5V Steady State t<s Steady State t<s T = +7 C T = +7 C T = +7 C T = +7 C Maximum Continuous Body Diode Forward Current (Note 6) I S.5 Pulsed Drain Current (µs pulse, duty cycle = %) M Maximum Ratings P-CHNNEL Q2 (@, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS -2 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current (Note 5) V GS = -4.5V Continuous Drain Current (Note 6) V GS = -4.5V Steady State t<s Steady State t<s T = +7 C T = +7 C T = +7 C T = +7 C Maximum Continuous Body Diode Forward Current (Note 6) I S -.5 Pulsed Drain Current (µs pulse, duty cycle = %) M Thermal Characteristics (@, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5).8 P D T = +7 C.5 W Thermal Resistance, Junction to mbient (Note 5) Steady State 68 R t<s J 2 C/W Total Power Dissipation (Note 6). P D T = +7 C.7 W Thermal Resistance, Junction to mbient (Note 6) Steady State 4 R θj t<s 72 C/W Thermal Resistance, Junction to Case (Note 6) R θjc 39 Operating and Storage Temperature Range T J, T STG -55 to +5 C Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with inch square copper plate. DMC238LVT 2 of September 23

3 DMC238LVT Electrical Characteristics N-CHNNEL Q (@, unless otherwise specified.) OFF CHRCTERISTICS (Note 7) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS 2 V V GS = V, = 25μ Zero Gate Voltage Drain c = +25 C SS. μ V DS =6V, V GS = V Gate-Source Leakage I GSS ± n V GS = ±2V, V DS = V ON CHRCTERISTICS (Note 7 ) Gate Threshold Voltage V GS(th).4. V V DS = V GS, = 25μ V GS = 4.5V, = 4. Static Drain-Source On-Resistance R DS (ON) mω V GS = 2.5V, = V GS =.8V, =.5 Forward Transfer dmittance Y fs 9 S V DS = 5V, = 3.4 Diode Forward Voltage V SD.4. V V GS = V, I S = DYNMIC CHRCTERISTICS (Note 8) Input Capacitance C iss 4 53 pf Output Capacitance C oss 7 9 pf Reverse Transfer Capacitance C rss 65 pf V DS = V, V GS = V, f =.MHz Gate Resistance R g.9 Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = 4.5V) Q g 5.7 nc Total Gate Charge (V GS = V) Q g 2 7 nc Gate-Source Charge Q gs.7 nc Gate-Drain Charge Q gd.4 nc Turn-On Delay Time t D(on) 5 ns Turn-On Rise Time t r 8 6 ns Turn-Off Delay Time t D(off) 25 4 ns Turn-Off Fall Time t f 8 6 ns V DS = 5V, = 5.8 V DS = V, V GS = 4.5V, R G = 6Ω, S =, Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing., DRIN CURRENT () V =V GS V GS=4.5V V GS=4.V V GS=3.5V V GS=3.V V GS=2.5V V GS=2.V, DRIN CURRENT () V = 5.V DS T = -55 C T = 25 C T = 85 C T = 5 C T = 25 C 5 V GS=.5V V DS, DRIN -SOURCE VOLTGE(V) Fig. Typical Output Characteristics V GS, GTE SOURCE VOLTGE(V) Fig. 2 Typical Transfer Characteristics DMC238LVT 3 of September 23

4 DMC238LVT R DS(ON),DRIN-SOURCE ON-RESISTNCE( ) V =.8V GS V = 2.5V GS V = 4.5V GS 5 5 2, DRIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage R DS(ON), DRIN-SOURCE ON-RESISTNCE( ) V = 4.5V GS T = 85 C T = 25 C T = 25 C T = 5 C T = -55 C , DRIN SOURCE CURRENT () Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE (Normalized) T J, JUNCTION TEMPERTURE ( C) Fig. 5 On-Resistance Variation with Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) V GS=5V =5 V GS=V = T, J JUNCTION TEMPERTURE (C) Fig. 6 On-Resistance Variation with Temperature V GS(TH), GTE THRESHOLD VOLTGE(V).5 I =m D I =25µ D I, S SOURCE CURRENT () T = 25 C T, MBIENT TEMPERTURE ( C) Fig. 7 Gate Threshold Variation vs. mbient Temperature V SD, SOURCE-DRIN VOLTGE (V) Fig. 8 Diode Forward Voltage vs. Current DMC238LVT 4 of September 23

5 DMC238LVT f = MHz C T, JUNCTION CPCITNCE (pf) C ISS C OSS C RSS V DS, DRIN-SOURCE VOLTGE (V) Fig. 9 Typical Junction Capacitance V GS, GTE-SOURCE VOLTGE (V) V =5V DS Q g, TOTL GTE CHRGE (nc) Fig. Gate-Charge Characteristics, DRIN CURRENT () RDS(on) Limited DC P W = s P W = s P W = ms P W = ms P. W = ms T J(max) = 5 C P W = µs T = 25 C V GS = V Single Pulse. DUT on * MRP Board. V DS, DRIN-SOURCE VOLTGE (V) Fig. SO, Safe Operation rea r(t), TRNSIENT THERML RESISTNCE.. D =.7 D =.5 D =.3 D =. D =.5 D =.2 D =. D =.5 R J(t) = r(t) * R J R J = 64 C/W Duty Cycle, D = t/ t2 Single Pulse......, t, PULSE DURTION TIMES (sec) Fig. 2 Transient Thermal Resistance D =.9 DMC238LVT 5 of September 23

6 DMC238LVT Electrical Characteristics P-CHNNEL Q2 unless otherwise specified.) OFF CHRCTERISTICS (Note 7) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS -2 V V GS = V, = -25μ Zero Gate Voltage Drain c = +25 C SS -. μ V DS = -6V, V GS = V Gate-Source Leakage I GSS ± n V GS = ±2V, V DS = V ON CHRCTERISTICS (Note 7) Gate Threshold Voltage V GS(th) V V DS = V GS, = V GS = -4.5V, = -3. Static Drain-Source On-Resistance R DS (ON) 76 mω V GS = -2.5V, = V GS = -.8V, = -. Forward Transfer dmittance Y fs S V DS = -5V, = -3. Diode Forward Voltage V SD V V GS = V, I S = -.6 DYNMIC CHRCTERISTICS (Note 8) Input Capacitance C iss pf Output Capacitance C oss 7 95 pf Reverse Transfer Capacitance C rss 6 9 pf V DS = -V, V GS = V, f =.MHz Gate Resistance R g 72 - Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = -4.5V) Q g 7 nc Total Gate Charge (V GS = -V) Q g 4 nc Gate-Source Charge Q gs.95 nc Gate-Drain Charge Q gd.2 nc Turn-On Delay Time t D(on) 2 ns Turn-On Rise Time t r 2 22 ns Turn-Off Delay Time t D(off) 2 34 ns Turn-Off Fall Time t f 3 23 ns V DS = -5V, = -6 V DS = -V, V GS = -4.5V, R G = 6Ω, I S = -, Notes: 7. Short duration pulse test used to minimize self-heating effec 8. Guaranteed by design. Not subject to product testing. 2 -V =V GS 2 -V =4.5V GS -, DRIN CURRENT () 5 5 -V =4.V GS -V =3.5V GS -V =3.V GS -V =2.5V GS -V =2.V GS I- D, DRIN CURRENT () 5 5 -V GS=.5V V DS, DRIN -SOURCE VOLTGE(V) Fig. 3 Typical Output Characteristics V GS, GTE SOURCE VOLTGE(V) Fig. 4 Typical Transfer Characteristics DMC238LVT 6 of September 23

7 DMC238LVT V GS = -.8V V GS = -2.5V V GS = -4.5V , DRIN SOURCE CURRENT Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage R DS(ON), DRIN-SOURCE ON-RESISTNCE( ) V = 4.5V GS T = 25 C T = 25 C T = 85 C T = 5 C T = -55 C , DRIN SOURCE CURRENT () Fig. 6 Typical On-Resistance vs. Drain Current and Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE (Normalized) T J, JUNCTION TEMPERTURE ( C) Fig. 7 On-Resistance Variation with Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) V GS=5V -=5 -V GS=V -= T J, JUNCTION TEMPERTURE ( C) Fig. 8 On-Resistance Variation with Temperature.5 2 -V GS(TH), GTE THRESHOLD VOLTGE(V) T, MBIENT TEMPERTURE ( C) Fig. 9 Gate Threshold Variation vs. mbient Temperature -I S, SOURCE CURRENT () V SD, SOURCE-DRIN VOLTGE (V) Fig. 2 Diode Forward Voltage vs. Current DMC238LVT 7 of September 23

8 DMC238LVT f = MHz C ISS C T, JUNCTION CPCITNCE (pf) C RSS C OSS V DS, DRIN-SOURCE VOLTGE (V) Fig. 2 Typical Junction Capacitance -V GS, GTE-SOURCE VOLTGE (V) Q g vs. VGS Q g, TOTL GTE CHRGE (nc) Fig. 22 Gate-Charge Characteristics 6 -, DRIN CURRENT () RDS(on) Limited DC P W = s P W = s P W = ms P W = ms. T J(max) = 5 C P W = ms T = 25 C P W = µs V GS = -V Single Pulse DUT on * MRP Board.. -V DS, DRIN-SOURCE VOLTGE (V) Fig. 23 SO, Safe Operation rea r(t), TRNSIENT THERML RESISTNCE.. D =.7 D =.5 D =.3 D =. D =.5 D =.2 D =. D =.5 R J(t) = r(t) * R J R J = 64 C/W Duty Cycle, D = t/ t2 Single Pulse......, t, PULSE DURTION TIMES (sec) Fig. 24 Transient Thermal Resistance D =.9 DMC238LVT 8 of September 23

9 DMC238LVT Package Outline Dimensions Please see P22 at for latest version. E 2 e D e 6x b E 4x L c L2 TSOT26 Dim Min Max Typ D E E b.3.45 c.2.2 e BSC BSC.95 e BSC BSC.9 L.3.5 L2 BSC BSC.25 θ 8 4 θ 4 2 ll Dimensions in mm Suggested Pad Layout Please see P2 at for the latest version. C C Y Y (6x) Dimensions Value (in mm) C.95 X.7 Y. Y 3.99 X (6x) DMC238LVT 9 of September 23

10 DMC238LVT IMPORTNT NOTICE DIODES INCORPORTED MKES NO WRRNTY OF NY KIND, EXPRESS OR IMPLIED, WITH REGRDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WRRNTIES OF MERCHNTBILITY ND FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 23, Diodes Incorporated DMC238LVT of September 23

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