Features -3.1A -2.0A. Pin Configuration
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1 DMC238LVT COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Features Device V (BR)DSS R DS(ON) Q 2V Q2-2V Description V GS = 4.5V 4.5 V GS =.8V 3.5 V GS = -4.5V V GS = -.8V This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. pplications Motor Control Power Management Functions DC-DC Converters Backlighting Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and ntimony Free. Green Device (Note 3) Qualified to EC-Q standards for High Reliability Mechanical Data Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD-2 Terminals Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-22, Method 28 Terminal Connections Indicator: See diagram Weight:.3 grams (approximate) TSOT26 Q D Q2 D2 G 6 D S2 2 5 S G G2 G2 3 4 D2 Top View Top View Pin Configuration S N-Channel S2 P-Channel Ordering Information (Note 4) Part Number Compliance Case Packaging DMC238LVT-7 Standard TSOT26 3/Tape & Reel DMC238LVTQ-7 utomotive TSOT26 3/Tape & Reel Notes:. No purposely added lead. Fully EU Directive 22/95/EC (RoHS) & 2/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information 3C YM 3C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2) M = Month (ex: 9 = September) Date Code Key Year Code X Y Z B C D Month Jan Feb Mar pr May Jun Jul ug Sep Oct Nov Dec Code O N D DMC238LVT of September 23
2 DMC238LVT Maximum Ratings N-CHNNEL Q (@, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS 2 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current (Note 5) V GS = 4.5V Continuous Drain Current (Note 6) V GS = 4.5V Steady State t<s Steady State t<s T = +7 C T = +7 C T = +7 C T = +7 C Maximum Continuous Body Diode Forward Current (Note 6) I S.5 Pulsed Drain Current (µs pulse, duty cycle = %) M Maximum Ratings P-CHNNEL Q2 (@, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS -2 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current (Note 5) V GS = -4.5V Continuous Drain Current (Note 6) V GS = -4.5V Steady State t<s Steady State t<s T = +7 C T = +7 C T = +7 C T = +7 C Maximum Continuous Body Diode Forward Current (Note 6) I S -.5 Pulsed Drain Current (µs pulse, duty cycle = %) M Thermal Characteristics (@, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5).8 P D T = +7 C.5 W Thermal Resistance, Junction to mbient (Note 5) Steady State 68 R t<s J 2 C/W Total Power Dissipation (Note 6). P D T = +7 C.7 W Thermal Resistance, Junction to mbient (Note 6) Steady State 4 R θj t<s 72 C/W Thermal Resistance, Junction to Case (Note 6) R θjc 39 Operating and Storage Temperature Range T J, T STG -55 to +5 C Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with inch square copper plate. DMC238LVT 2 of September 23
3 DMC238LVT Electrical Characteristics N-CHNNEL Q (@, unless otherwise specified.) OFF CHRCTERISTICS (Note 7) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS 2 V V GS = V, = 25μ Zero Gate Voltage Drain c = +25 C SS. μ V DS =6V, V GS = V Gate-Source Leakage I GSS ± n V GS = ±2V, V DS = V ON CHRCTERISTICS (Note 7 ) Gate Threshold Voltage V GS(th).4. V V DS = V GS, = 25μ V GS = 4.5V, = 4. Static Drain-Source On-Resistance R DS (ON) mω V GS = 2.5V, = V GS =.8V, =.5 Forward Transfer dmittance Y fs 9 S V DS = 5V, = 3.4 Diode Forward Voltage V SD.4. V V GS = V, I S = DYNMIC CHRCTERISTICS (Note 8) Input Capacitance C iss 4 53 pf Output Capacitance C oss 7 9 pf Reverse Transfer Capacitance C rss 65 pf V DS = V, V GS = V, f =.MHz Gate Resistance R g.9 Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = 4.5V) Q g 5.7 nc Total Gate Charge (V GS = V) Q g 2 7 nc Gate-Source Charge Q gs.7 nc Gate-Drain Charge Q gd.4 nc Turn-On Delay Time t D(on) 5 ns Turn-On Rise Time t r 8 6 ns Turn-Off Delay Time t D(off) 25 4 ns Turn-Off Fall Time t f 8 6 ns V DS = 5V, = 5.8 V DS = V, V GS = 4.5V, R G = 6Ω, S =, Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing., DRIN CURRENT () V =V GS V GS=4.5V V GS=4.V V GS=3.5V V GS=3.V V GS=2.5V V GS=2.V, DRIN CURRENT () V = 5.V DS T = -55 C T = 25 C T = 85 C T = 5 C T = 25 C 5 V GS=.5V V DS, DRIN -SOURCE VOLTGE(V) Fig. Typical Output Characteristics V GS, GTE SOURCE VOLTGE(V) Fig. 2 Typical Transfer Characteristics DMC238LVT 3 of September 23
4 DMC238LVT R DS(ON),DRIN-SOURCE ON-RESISTNCE( ) V =.8V GS V = 2.5V GS V = 4.5V GS 5 5 2, DRIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage R DS(ON), DRIN-SOURCE ON-RESISTNCE( ) V = 4.5V GS T = 85 C T = 25 C T = 25 C T = 5 C T = -55 C , DRIN SOURCE CURRENT () Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE (Normalized) T J, JUNCTION TEMPERTURE ( C) Fig. 5 On-Resistance Variation with Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) V GS=5V =5 V GS=V = T, J JUNCTION TEMPERTURE (C) Fig. 6 On-Resistance Variation with Temperature V GS(TH), GTE THRESHOLD VOLTGE(V).5 I =m D I =25µ D I, S SOURCE CURRENT () T = 25 C T, MBIENT TEMPERTURE ( C) Fig. 7 Gate Threshold Variation vs. mbient Temperature V SD, SOURCE-DRIN VOLTGE (V) Fig. 8 Diode Forward Voltage vs. Current DMC238LVT 4 of September 23
5 DMC238LVT f = MHz C T, JUNCTION CPCITNCE (pf) C ISS C OSS C RSS V DS, DRIN-SOURCE VOLTGE (V) Fig. 9 Typical Junction Capacitance V GS, GTE-SOURCE VOLTGE (V) V =5V DS Q g, TOTL GTE CHRGE (nc) Fig. Gate-Charge Characteristics, DRIN CURRENT () RDS(on) Limited DC P W = s P W = s P W = ms P W = ms P. W = ms T J(max) = 5 C P W = µs T = 25 C V GS = V Single Pulse. DUT on * MRP Board. V DS, DRIN-SOURCE VOLTGE (V) Fig. SO, Safe Operation rea r(t), TRNSIENT THERML RESISTNCE.. D =.7 D =.5 D =.3 D =. D =.5 D =.2 D =. D =.5 R J(t) = r(t) * R J R J = 64 C/W Duty Cycle, D = t/ t2 Single Pulse......, t, PULSE DURTION TIMES (sec) Fig. 2 Transient Thermal Resistance D =.9 DMC238LVT 5 of September 23
6 DMC238LVT Electrical Characteristics P-CHNNEL Q2 unless otherwise specified.) OFF CHRCTERISTICS (Note 7) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS -2 V V GS = V, = -25μ Zero Gate Voltage Drain c = +25 C SS -. μ V DS = -6V, V GS = V Gate-Source Leakage I GSS ± n V GS = ±2V, V DS = V ON CHRCTERISTICS (Note 7) Gate Threshold Voltage V GS(th) V V DS = V GS, = V GS = -4.5V, = -3. Static Drain-Source On-Resistance R DS (ON) 76 mω V GS = -2.5V, = V GS = -.8V, = -. Forward Transfer dmittance Y fs S V DS = -5V, = -3. Diode Forward Voltage V SD V V GS = V, I S = -.6 DYNMIC CHRCTERISTICS (Note 8) Input Capacitance C iss pf Output Capacitance C oss 7 95 pf Reverse Transfer Capacitance C rss 6 9 pf V DS = -V, V GS = V, f =.MHz Gate Resistance R g 72 - Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = -4.5V) Q g 7 nc Total Gate Charge (V GS = -V) Q g 4 nc Gate-Source Charge Q gs.95 nc Gate-Drain Charge Q gd.2 nc Turn-On Delay Time t D(on) 2 ns Turn-On Rise Time t r 2 22 ns Turn-Off Delay Time t D(off) 2 34 ns Turn-Off Fall Time t f 3 23 ns V DS = -5V, = -6 V DS = -V, V GS = -4.5V, R G = 6Ω, I S = -, Notes: 7. Short duration pulse test used to minimize self-heating effec 8. Guaranteed by design. Not subject to product testing. 2 -V =V GS 2 -V =4.5V GS -, DRIN CURRENT () 5 5 -V =4.V GS -V =3.5V GS -V =3.V GS -V =2.5V GS -V =2.V GS I- D, DRIN CURRENT () 5 5 -V GS=.5V V DS, DRIN -SOURCE VOLTGE(V) Fig. 3 Typical Output Characteristics V GS, GTE SOURCE VOLTGE(V) Fig. 4 Typical Transfer Characteristics DMC238LVT 6 of September 23
7 DMC238LVT V GS = -.8V V GS = -2.5V V GS = -4.5V , DRIN SOURCE CURRENT Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage R DS(ON), DRIN-SOURCE ON-RESISTNCE( ) V = 4.5V GS T = 25 C T = 25 C T = 85 C T = 5 C T = -55 C , DRIN SOURCE CURRENT () Fig. 6 Typical On-Resistance vs. Drain Current and Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE (Normalized) T J, JUNCTION TEMPERTURE ( C) Fig. 7 On-Resistance Variation with Temperature R DS(ON), DRIN-SOURCE ON-RESISTNCE ( ) V GS=5V -=5 -V GS=V -= T J, JUNCTION TEMPERTURE ( C) Fig. 8 On-Resistance Variation with Temperature.5 2 -V GS(TH), GTE THRESHOLD VOLTGE(V) T, MBIENT TEMPERTURE ( C) Fig. 9 Gate Threshold Variation vs. mbient Temperature -I S, SOURCE CURRENT () V SD, SOURCE-DRIN VOLTGE (V) Fig. 2 Diode Forward Voltage vs. Current DMC238LVT 7 of September 23
8 DMC238LVT f = MHz C ISS C T, JUNCTION CPCITNCE (pf) C RSS C OSS V DS, DRIN-SOURCE VOLTGE (V) Fig. 2 Typical Junction Capacitance -V GS, GTE-SOURCE VOLTGE (V) Q g vs. VGS Q g, TOTL GTE CHRGE (nc) Fig. 22 Gate-Charge Characteristics 6 -, DRIN CURRENT () RDS(on) Limited DC P W = s P W = s P W = ms P W = ms. T J(max) = 5 C P W = ms T = 25 C P W = µs V GS = -V Single Pulse DUT on * MRP Board.. -V DS, DRIN-SOURCE VOLTGE (V) Fig. 23 SO, Safe Operation rea r(t), TRNSIENT THERML RESISTNCE.. D =.7 D =.5 D =.3 D =. D =.5 D =.2 D =. D =.5 R J(t) = r(t) * R J R J = 64 C/W Duty Cycle, D = t/ t2 Single Pulse......, t, PULSE DURTION TIMES (sec) Fig. 24 Transient Thermal Resistance D =.9 DMC238LVT 8 of September 23
9 DMC238LVT Package Outline Dimensions Please see P22 at for latest version. E 2 e D e 6x b E 4x L c L2 TSOT26 Dim Min Max Typ D E E b.3.45 c.2.2 e BSC BSC.95 e BSC BSC.9 L.3.5 L2 BSC BSC.25 θ 8 4 θ 4 2 ll Dimensions in mm Suggested Pad Layout Please see P2 at for the latest version. C C Y Y (6x) Dimensions Value (in mm) C.95 X.7 Y. Y 3.99 X (6x) DMC238LVT 9 of September 23
10 DMC238LVT IMPORTNT NOTICE DIODES INCORPORTED MKES NO WRRNTY OF NY KIND, EXPRESS OR IMPLIED, WITH REGRDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WRRNTIES OF MERCHNTBILITY ND FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 23, Diodes Incorporated DMC238LVT of September 23
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1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V RRM (V) I O (A) V F(MAX) (V) @ +25 C I R(MAX) (µa) @ +25 C 80 1 0.80 5 Description and Applications Features and Benefits Low Forward Voltage
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6V P-HANNEL ENHANEMENT MODE MOSFET Product Summary Features and Benefits ADVANE INFORMATION NEW PRODUT V (BR)DSS -6V Description R DS(on) I D T A = +25 5mΩ @ V GS = -V -3A 85mΩ @ V GS = -4.5V -2.7A This
More informationGreen. Pin1. Top View Pin Configuration. Part Number Case Packaging DMTH3004LPS-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product Summary BV SS 3V R S(ON) Max 3.8mΩ @ V GS = V 6mΩ @ V GS = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOSFET is designed to minimize the on-state
More informationGreen. SOD123F (Standard) Top View. Part Number Qualification Case Packaging US1GWF-7 AEC-Q101 SOD123F (Standard) 3,000/Tape & Reel
Green.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 400.25 Description The is a rectifier packaged in the SOD23F (Standard) package and
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging HDS20M-13 Commercial HDS 5,000/Tape & Reel
Green 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 2 0.95 5 Features and Benefits Glass Passivated Die Construction Miniature
More informationGreen. Features. TO220AB Bottom View. Part Number Case Packaging SDT20B100CT TO220AB 50 Pieces/Tube
Green 20 TRENCH SCHOTTKY RECTIFIER Product Summary (Per Leg) V V RRM (V) I O () F Max (V) I R Max (µ) @ +25 C @ +25 C 0 0.80 0 Description and pplications Features Low Forward Voltage Drop Excellent High
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SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Mechanical Data Ultra-Small Surface Mount Package Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection Totally Lead-Free
More informationADC114YUQ. Mechanical Data. Features. Ordering Information (Notes 4 & 5) Marking Information NXX 1Y7 YM NXX YM
NXX YM NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes &
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MB10S-13 Commercial MBS 3,000/Tape & Reel
Green 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 000 0.8. 5 Description and Applications Features and Benefits Glass Passivated
More informationGreen. Part Number Compliance Case Packaging DBF Commercial DBF 3,000/Tape & Reel
Green 3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa),000 3.0 5 Features and Benefits Glass Passivated Die Construction Miniature Package
More informationB3XXAE B320AE-B345AE. Product Summary. Features and Benefits. Mechanical Data. Description and Applications NEW PRODUCT. Ordering Information (Note 4)
Green 3.0A SCHOTTKY BARRIER RECTIFIER Product Summary B320AE/B330AE/B340AE/B345AE V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 20 3 0.5 0. 30 3 0.5 0.15 40 3 0.5 0.20 45 3 0.5 0.30 Features
More informationGreen. Case Material: Molded Plastic. UL Flammability Classification 3.3V - 200V Nominal Zener Voltage Range
Green 3.W SURFACE MOUNT POWER ENER DIODE Features Mechanical Data 3.W Power Dissipation Case: SMB Ideally Suited for Automated Assembly Case Material: Molded Plastic. UL Flammability Classification 3.3V
More informationDevice Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
More informationApplications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
More informationZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
More informationGreen. Part Number Case Packaging SBRT3U60SAF-13 SMAF 10,000/Tape & Reel
Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary V V RRM (V) I O (A) F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 60 3 0.53 0.5 Description and Applications The device is a 3A 60V single
More informationZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
More informationGreen SMC. Top View Bottom View. Part Number Case Packaging B5XXCE-13 SMC 3,000/Tape & Reel
Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary B520CE/B530CE/B540CE V RRM (V) I O (A) V F Max (V) I R Max (ma) 20 5.0 0.55 0.2 30 5.0 0.55 0.2 40 5.0 0.55 0.2 Features and Benefits
More informationGreen. Top View Pin Diagram Internal Schematic. Part Number Case Packaging MSB12M-13 MSB 3,000/Tape & Reel
Green.2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (µa),000.2. 5 Features and Benefits Glass Passivated Die Construction Compact, Thin
More informationGreen. Bottom View. Top View. Part Number Compliance Case Packaging SDT3A45SA-13 Commercial SMA 5,000/Tape & Reel
Green 3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA Product Summary (@ T A = +25 C ) V RRM (V) I O (A) V F(MAX) (mv) I R(MAX) (µa) 45 3 480 280 Features and Benefits Low Leakage Current Soft, Fast Switching
More informationFeatures. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
More informationGreen T-DFN Part Number Compliance Case Packaging LBS10-13 Commercial T-DFN ,000/Tape & Reel
Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
More informationZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3A0N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 30V 3.9nC 25m @ = 0V 2.7A 80m @ = 4. 2.2A
More informationZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
More informationRDBF31-RDBF310. Product Summary A = +25 C) Features and Benefits ADVANCED INFORMATION NEW PRODUCT. Description and Applications.
Green 3.0A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V FM (V) I R (μa) 00,800,600, 400,200,0 3.0.3 5 Description and Applications Suitable for
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MSB30M-13 Commercial MSBL 2,500/Tape & Reel
Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
More informationFeatures. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DM SO-7 Standard BF ,000/Tape & Reel
2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
More informationGreen. Part Number Qualification Case Packaging P4SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationDSS5240T. Features. Mechanical Data NEW PRODUCT. Application. Ordering Information (Note 4 & 5) Marking Information
YM NEW PRODUT 40V PNP LOW STURTION TRNSISTOR IN SOT23 Features BV EO > -40V I = -2 high ontinuous ollector urrent I M = -3 Peak Pulse urrent Low Saturation Voltage -225mV Max @ I = -. R E(ST) = 90mΩ at
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
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NEW PODUCT Green 5 ULT-FST ECOVEY ECTIFIE PowerDI Product Summary (@T = +25 C) V M (V) I O () V F Max (V) I Max (μ) 4 5 1.185 1 Description Features and Benefits Glass Passivated Die Construction Ultra-Fast
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD65T50S1PT DGTD65T50S1 450 per Box in Tubes (Note 5)
650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationFeatures. Top View Pin-Out
40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
More informationGreen. PowerDI123. Top View. Part Number Compliance Case Packaging DFLS260Q-7 Automotive PowerDI /Tape & Reel
Green 2.A SURFAE MOUNT SHOTTKY BARRIER RETIFIER POWERDI 123 Product Summary V R (V) I F (A) V F MAX (V) @ +25 I R MAX (ma) @ +25 6 2..62.1 Description and Applications This Schottky Barrier Rectifier has
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationX2-DFN Bottom View. Part Number Case Packaging BAT54LPS-7 X2-DFN ,000/Tape & Reel
.2 SUFCE MOUT SCHOTTKY BIE DIODE Features Mechanical Data Low Forward Voltage Drop Fast Switching Ultra-Small Leadless Surface Mount Package P Junction Guard ing for Transient and ESD Protection Totally
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationPART OBSOLETE - NO ALTERNATE PART Green. Features DO-214AA
Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
More informationPart Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationFeatures DO-41 DO-15 DO-214AC
SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationFeatures DO-15 DO-214AC SOD-123
SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More informationFeatures TO-220F-3 TO (2) TO-263-2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationGreen. Features 90A 90A. PowerDI S. Pin1. Top View Pin Configuration. Part Number Case Packaging DMT4004LPS-13 PowerDI ,500 / Tape & Reel
Product ummary Green 4V N-CHANNEL ENHANCEMENT MOE MOFET POWERI Features BV 4V R (ON) Max 2.5mΩ @ V G = V 4mΩ @ V G = 4.5V I T C = +25 C 9A 9A % Unclamped Inductive witching ensures more reliable and robust
More informationFeatures DNC GND GND GND GATE GATE. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3108N8TC ZXGD ,500
V ACTIVE OR'ING MOSFET CONTROLLER IN SO8 Description is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationBC817-16Q /-40Q. Mechanical Data. Description. Features. Ordering Information (Notes 4 and 5) Marking Information
45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS 20 V V GS = 4.5V 33 R DS(on) (max) V GS = 2.5V 40 V GS = 1.8V 51 mω Q g 11 nc Features Advance Trench
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PART OBSOLETE - USE N7 V ACTIVE OR-ING MOSFET CONTROLLER IN SO8 Description is a V Active OR-ing MOSFET controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces
More informationFeatures SO-7. Typical Configuration for Low-Side -ve Supply Rail DRAIN. Top View
V ACTIVE OR'ING MOSFET CONTROLLER IN SO7 Description The is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
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SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 14 @ V GS = -10V -11-30 20 @ V GS = -4.5V -8.5 Features Advance
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TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
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3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully
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N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES Advanced planar process 100% avalanche tested Fast switching APPLICATION Power Supply Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 800
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TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS = -10V 95 R DS(on) (max) mω V GS = -4.5V 140 Q g 10 nc Features Advance Trench Process Technology
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TSM5P4LCS P-Channel Power MOSFET -4V, -22A, 5mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
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TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE
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TSM38N4LCP N-Channel Power MOSFET 4V, 35A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
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Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES Fast switching 100% avalanche tested Pb-free plating Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to
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