N-Channel 100-V (D-S) MOSFET
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1 N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).5 at V GS = V 7.9. at V GS = 6. V 7.5 FEATURES Halogen-free According to IEC efinition TrenchFET Power MOSFETs 75 C Maximum Junction Temperature PWM Optimized Compliant to RoHS irective /95/EC SO- S S 7 S 3 6 G 4 5 G Top View Ordering Information: Si446EY-T-E3 (Lead (Pb)-free) Si446EY-T-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol s Steady State Unit rain-source Voltage V S V Gate-Source Voltage V GS ± Continuous rain Current (T J = 75 C) a T A = 5 C I T A = 5 C A Pulsed rain Current I M 4 Avalanche Current I AR 3 L = mh Repetitive Avalanche Energy (uty Cycle %) E AR 45 mj Continuous Source Current (iode Conduction) a I S 3..5 A T A = 5 C Maximum Power issipation a 3.. P W T A = 5 C.3. Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t s 33 4 R thja Steady State 7 5 C/W Maximum Junction-to-Foot (rain) Steady State R thjf 7 Notes: a. Surface Mounted on " x " FR4 board. ocument Number: 734 S9-34-Rev. E, 3-Jul-9
2 SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage V GS(th) V S = V GS, I = 5 µa V Gate-Body Leakage I GSS V S = V, V GS = ± V ± na V S = V, V GS = V Zero Gate Voltage rain Current I SS V S = V, V GS = V, T J = 5 C µa On-State rain Current a I (on) V S 5 V, V GS = V 4 A V GS = V, I = 7.9 A rain-source On-State Resistance a..5 R S(on) V GS = 6. V, I = 7.5 A.3. Ω Forward Transconductance a g fs V S = 5 V, I = 7.9 A 35 S iode Forward Voltage a V S I S = 3. A, V GS = V.. V ynamic b Total Gate Charge Q g Gate-Source Charge Q gs V S = 5 V, V GS = V, I = 7.9 A nc Gate-rain Charge Q gd.6 Gate Resistance R g.5.7. Ω Turn-On elay Time t d(on) 4 Rise Time t r V = 5 V, R L = 5 Ω Turn-Off elay Time t d(off) I A, V GEN = V, R g = 6 Ω 46 9 ns Fall Time t f 6 5 Source-rain Reverse Recovery Time t rr I F = 3. A, di/dt = A/µs 5 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 5 C, unless otherwise noted 4 4 V GS = V thru 6 V 3 5 V 3 I - rain Current (A) V rain Current (A) I 4 6 T C = 5 C 5 C - 55 C V S - rain-to-source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics ocument Number: 734 S9-34-Rev. E, 3-Jul-9
3 TYPICAL CHARACTERISTICS 5 C, unless otherwise noted On-Resistance (Ω) R S(on).3.. V GS = 6. V V GS = V C - Capacitance (pf) 5 5 C iss 5 C rss C oss I - rain Current (A) On-Resistance vs. rain Current V S - rain-to-source Voltage (V) Capacitance.6 - Gate-to-Source Voltage (V) 6 4 V S = 5 V I = 7.9 A R S(on) - On-Resistance (Normalized) V GS = V I = 7.9 A V GS Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 4. - Source Current (A) I S T J = 75 C T J = 5 C - On-Resistance (Ω) R S(on).6.4. I = 7.9 A V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage. 4 6 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage ocument Number: 734 S9-34-Rev. E, 3-Jul-9 3
4 TYPICAL CHARACTERISTICS 5 C, unless otherwise noted.5 5. I = 5 µa 4 Variance (V) V GS(th) -.5 Power (W) T J - Temperature ( C) Threshold Voltage. 6 Time (s) Single Pulse Power Limited by RS(on)* - rain Current (A) I. T A = 5 C Single Pulse. V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area BVSS Limited ms ms ms s s C Normalized Effective Transient Thermal Impedance uty Cycle =.5. Notes: P M.5 t t t. uty Cycle, = t.. Per Unit Base = R thja = 7 C/W 3. T Single Pulse JM - T A = P M Z (t) thja 4. Surface Mounted Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 ocument Number: 734 S9-34-Rev. E, 3-Jul-9
5 TYPICAL CHARACTERISTICS 5 C, unless otherwise noted Normalized Effective Transient Thermal Impedance uty Cycle = Single Pulse -3 - Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?734. ocument Number: 734 S9-34-Rev. E, 3-Jul-9 5
6 Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT SPECIFICATIONS AN ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVE Revision: -Feb-7 ocument Number: 9
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Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition
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Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -
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SiA483J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.2at V GS = - V - 2 a 2 nc.3 at V GS = - 4.5 V - 2 a PowerPAK SC-7-6L-Single 6 5 2.5 mm S 4 S 2 3 G 2.5 mm
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New Product Dual P-Channel 2-V (D-S) MOSFET Si93CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) - 2.92 at V GS = - V - 8.33 at V GS = -.5 V - 8 2 SO-8 S 8 D G 2 7 D FEATURES Halogen-free
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N-Channel 6 V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).3 at V GS = V 9. 6 6.5 nc.45 at V GS = 4.5 V 7.6 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
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Si469H P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - SOT-363 SC-7 (6-LEAS).8 at V GS = - V -.7. at V GS = - 4.5 V -.7.55 at V GS = -.5 V -.7 5.5 nc FEATURES Halogen-free
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SiA449J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.24 at V GS = - 4.5 V - 2 a 23. nc.2 at V GS = - V - 2 a.38 at V GS = - 2.5 V - 2 a PowerPAK SC-7-L-Single
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Si99H P-Channel. V (G-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 8.78 at V GS = -.5 V -..95 at V GS = -.5 V -..5 at V GS = -.8 V -..5 at V GS = -.5 V -.. at V GS = -. V -. b SOT-
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Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition
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N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () (MAX.) I (A) a Q g (TYP.) 3.84 at V GS = V 37.8.4 at V GS = 4.5 V 32.5 PowerPAK SC-7-6L Single S 4 5 6 8.2 nc FEATURES TrenchFET Gen IV power
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New Product SiEH P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) G -. at V GS = -.5 V -.5 at V GS = -.5 V -. at V GS = -.8 V - SOT-6 SC-7 (6-LEAS) Top View 6 5 S.5 nc Part
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P-Channel 4 V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETs 75 C Junction Temperature Compliant
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N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested
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SiDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).68 at V GS =. V.6 a nc.8 at V GS =. V. TO-6 (SOT-) FEATURES Halogen-free According to IEC 69-- Definition TrenchFET
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Si63CY P-Channel 2.5 V (G-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) d Q g (Typ.).8 at V GS = - V - 8.6-2. at V GS = -.5 V - 6.6 5 nc. at V GS = - 2.5 V - FEATURES Halogen-free According to IEC
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