Automotive N-Channel 60 V (D-S) 175 C MOSFET

Transcription

1 Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V.42 R S(on) () at V GS = 4.5 V.3 I (A) 7 Configuration Single TSOP- Single S 4 5 Top View Marking Code: 8Axxx 2 3 G ORERING INFORMATION Package Lead (Pb)-free and Halogen-free (3) G (, 2, 5, ) (4) S N-Channel MOSFET FEATURES TrenchFET power MOSFET Typical ES protection 8 V HBM AEC-Q qualified % R g and UIS tested Material categorization: For definitions of compliance please see TSOP- -T-GE3 ABSOLUTE MAXIMUM RATINGS (, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source Voltage V S Gate-Source Voltage V GS ± 2 V Continuous rain Current 7 I 4 Continuous Source Current (iode Conduction) I S A Pulsed rain Current a I M 29 Single Pulse Avalanche Current I AS L =. mh Single Pulse Avalanche Energy E AS 5 mj 5 Maximum Power issipation a P. W Operating Junction and Storage Temperature Range T J, T stg - 55 to +75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b R thja Junction-to-Foot (rain) R thjf 3 C/W Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. When mounted on " square PCB (FR-4 material). S4-22-Rev. E, 7-Feb-4 ocument Number: 535 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

2 Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source Breakdown Voltage V S V GS =, I = 25 μa - - Gate-Source Threshold Voltage V GS(th) V S = V GS, I = 25 μa Gate-Source Leakage I GSS V S = V, V GS = ± 2 V - - ± 5 na V S = V, V GS = ± 2 V - - ± ma Zero Gate Voltage rain Current I SS V GS = V V S = V, T J = 25 C μa V GS = V V S = V - - V GS = V V S = V, T J = 75 C On-State rain Current a I (on) V GS = V V S 5 V - - A V GS = V I = 5 A rain-source On-State Resistance a R S(on) V GS = V I = 5 A, T J = 25 C V GS = V I = 5 A, T J = 75 C V GS = 4.5 V I = 4 A Forward Transconductance a g fs V S = 5 V, I = 4 A S ynamic b Input Capacitance C iss Output Capacitance C oss V GS = V V S = 3 V, f = MHz pf Reverse Transfer Capacitance C rss Total Gate Charge c Q g Gate-Source Charge c Q gs V GS = 4.5 V V S = 3 V, I = 4 A nc Gate-rain Charge c Q gd Gate Resistance R g f = MHz Turn-On elay Time c t d(on) Rise Time c t r V = 3 V, R L = Turn-Off elay Time c t d(off) I 4 A, V GEN = V, R g = ns Fall Time c t f - 7 Source-rain iode Ratings and Characteristics b Pulsed Current a I SM A Forward Voltage V S I F =. A, V GS = V V S4-22-Rev. E, 7-Feb-4 2 ocument Number: 535 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

3 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) V GS =Vthru5V 2 V GS =4V 9 3 V GS = 3 V T C = - 55 C Output Characteristics Transfer Characteristics Transconductance (S) g fs T C = - 55 C R S(on) - On-Resistance (Ω) V GS =4.5V V GS =V Transconductance On-Resistance vs. rain Current V S = 3 V I = 4 A C - Capacitance (pf) C oss C iss C rss Capacitance Q g - Total Gate Charge (nc) Gate Charge S4-22-Rev. E, 7-Feb-4 3 ocument Number: 535 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

4 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) -2 I GSS - Gate Current (A) T J = 5 C T J = 25 C - Source Current (A) I S.. T J = 5 C T J = 25 C V S - Source-to-rain Voltage (V) Gate Current vs. Gate-Source Voltage Source-rain iode Forward Voltage On-Resistance (Normalized) R S(on) I =3.2A V GS =V V GS(th) Variance (V) I = 25 µa I =5mA T J - Junction Temperature ( C) T J - Temperature ( C) On-Resistance vs. Junction Temperature Threshold Voltage.2 8 I =ma - On-Resistance (Ω) R S(on) T J = 25 C T J = 5 C On-Resistance vs. Gate-Source Voltage T J - Junction Temperature ( C) rain-source Breakdown vs. Junction Temperature S4-22-Rev. E, 7-Feb-4 4 ocument Number: 535 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

5 THERMAL RATINGS (T A = 25 C, unless otherwise noted) I M Limited. Limited by R S(on) * Single Pulse BVSS Limited μs ms ms ms s, s, C... * V GS > minimum V GS at which R S(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance...2 uty Cycle = Single Pulse Square Wave Pulse uration (s) Notes: Normalized thermal Transient Impedance, Junction-to-Ambient P M t t 2 t. uty Cycle, = t 2 2. Per Unit Base = R thja = C/W 3. T JM -T A =P M Z (t) thja 4. Surface Mounted S4-22-Rev. E, 7-Feb-4 5 ocument Number: 535 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

6 THERMAL RATINGS (T A = 25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse uration (s) Normalized thermal Transient Impedance, Junction-to-Foot Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 C) - Normalized Transient Thermal Impedance Junction to Foot (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.2", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S4-22-Rev. E, 7-Feb-4 ocument Number: 535 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

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