FEATURES T C = 25 C. A Pulsed Drain Current a I DM 32 Single Pulse Avalanche Current 3 P D T C = 125 C 1

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1 SQ348ES 3 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 3 R DS(on) ( ) at V GS = V.4 R DS(on) ( ) at V GS = 4.5 V.3 I D (A) 8 Configuration Single G TO-36 (SOT-3) D FEATURES TrenchFET Power MOSFET AEC-Q Qualified c % R g and UIS Tested Material categorization: For definitions of compliance please see S 3 D G Top View SQ348ES* * Marking Code: 8Gxxx S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-3 SQ348ES-T-GE3 ABSOLUTE MAXIMUM RATINGS (, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 3 Gate-Source Voltage V GS ± V Continuous Drain Current 8 I D 5.3 Continuous Source Current (Diode Conduction) I S 3.8 A Pulsed Drain Current a I DM 3 Single Pulse Avalanche Current I AS 5.5 L =. mh Single Pulse Avalanche Energy E AS mj T Maximum Power Dissipation a C = 5 C 3 P D W Operating Junction and Storage Temperature Range T J, T stg - 55 to + 75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b R thja 66 C/W Junction-to-Foot (Drain) R thjf 5 Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. When mounted on " square PCB (FR-4 material). c. Parametric verification ongoing. / 7

2 SQ348ES 3 V (D-S) 75 C MOSFET Zero Gate Voltage Drain Current I DSS SPECIFICATIONS (, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 5 μa Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 5 μa.5..5 V Gate-Source Leakage I GSS V DS = V, V GS = ± V - - ± na V GS = V V DS = 3 V, T J = 5 C μa V GS = V V DS = 3 V - - V GS = V V DS = 3 V, T J = 75 C On-State Drain Current a I D(on) V GS = V V DS 5 V - - A V GS = V I D = A -..4 Drain-Source On-State Resistance a R DS(on) V GS = V I D = A, T J = 5 C V GS = V I D = A, T J = 75 C V GS = 4.5 V I D = 8 A Forward Transconductance b g fs V DS = 5 V, I D = 3 A - - S Dynamic b Input Capacitance C iss Output Capacitance C oss V GS = V V DS = 5 V, f = MHz - 5 pf Reverse Transfer Capacitance C rss Total Gate Charge c Q g Gate-Source Charge c Q gs V GS = V V DS = 5 V, I D = 5.5 A nc Gate-Drain Charge c Q gd Gate Resistance R g f = MHz Turn-On Delay Time c t d(on) Rise Time c t r V DD = 5 V, R L = Turn-Off Delay Time c t d(off) I D 4.4 A, V GEN = V, R g = - 3 ns Fall Time c t f Source-Drain Diode Ratings and Characteristics b Pulsed Current a I SM A Forward Voltage V SD I F = 3.5 A, V GS = V -.8. V Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. / 7

3 TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) SQ348ES 3 V (D-S) 75 C MOSFET 5 5 V GS = V thru 4 V V GS = 3 V Output Characteristics 5 T C = - 55 C Transfer Characteristics 5 3 T C = - 55 C g fs - Transconductance (S) 8 6 T C = - 55 C Transfer Characteristics Transconductance R DS(on) - On-Resistance (Ω).6.4. V GS = 4.5 V C - Capacitance (pf) C oss C iss V GS = V On-Resistance vs. Drain Current C rss Capacitance 3 / 7

4 TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) SQ348ES 3 V (D-S) 75 C MOSFET I D = 5.5 A V DS = 5 V R DS(on) - On-Resistance (Normalized) I D = 5.5 A V GS = V V GS = 4.5 V Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.5. I S - Source Current (A).. T J = 5 C T J = 5 C R DS(on) - On-Resistance (Ω) T J = 5 C V SD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage T J = 5 C On-Resistance vs. Gate-to-Source Voltage.5 4 V GS(th) Variance (V) I D = 5 μa I D = 5 ma I D = ma T J - Temperature ( C) Threshold Voltage T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature 4 / 7

5 SQ348ES 3 V (D-S) 75 C MOSFET THERMAL RATINGS (T A = 5 C, unless otherwise noted) I DM Limited. Single Pulse Limited by R DS(on) * BVDSS Limited μs ms ms ms s, s, DC... * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area Duty Cycle =.5 Normalized Effective Transient Thermal Impedance. Notes:. P DM..5 t t t.. Duty Cycle, D = t. Per Unit Base = R thja = 66 C/W 3. T JM - T A = P DM Z (t) thja Single Pulse 4. Surface Mounted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5 / 7

6 SQ348ES 3 V (D-S) 75 C MOSFET THERMAL RATINGS (T A = 5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (5 C) - Normalized Transient Thermal Impedance Junction-to-Foot (5 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.6", double sided with oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6 / 7

7 Disclaimer SQ348ES 3 V (D-S) 75 C MOSFET ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, freestyle ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on freestyle s knowledge of typical requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify freestyle s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. Customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay Material Category Policy freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive /65/EU of The European Parliament and of the Council of June 8, on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwis e specified as non-compliant. Please note that some freestyle documentation may still make reference to RoHS Directive /95/EC. We confirm that all the products identified as being compliant to Directive /95/EC conform to Directive /65/EU. 7 / 7