Complementary 30 V (G-S) MOSFET
|
|
- Abigail O’Brien’
- 5 years ago
- Views:
Transcription
1 Si39DL Complementary 3 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) ( ) I D (A) N-Channel 3.8 at V GS = V 3.7 at V GS =. V. P-Channel at V GS = - V -..7 at V GS = -. V -.33 FEATURES TrenchFET Power MOSFET Material categorization: For definitions of compliance please see /doc?999 SOT-363 SC-7 (6-LEADS) S 6 D Marking Code G G RC XX YY Lot Traceability and Date Code D 3 S Part # Code Top View Ordering Information: Si39DL-T-E3 (Lead (Pb)-free) Si39DL-T-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T A = C, unless otherwise noted) N-Channel P-Channel Parameter Symbol s Steady State s Steady State Unit Drain-Source Voltage V DS 3-3 Gate-Source Voltage V GS ± V Continuous Drain Current (T J = C) a T A = C I D T A = 8 C A Pulsed Drain Current I DM Continuous Source Current (Diode Conduction) a I S T A = C Maximum Power Dissipation a P D T A = 8 C.. W Operating Junction and Storage Temperature Range T J, T stg - to C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t s 36 R thja Steady State 6 C/W Maximum Junction-to-Foot (Drain) Steady State R thjf 3 3 Notes: a. Surface mounted on " x " FR board. Document Number: 7 S-8-Rev. E, 6-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
2 Si39DL SPECIFICATIONS (T J = C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V DS = V GS, I D = µa N-Ch.6 Gate Threshold Voltage V GS(th) V DS = V GS, I D = - µa P-Ch Gate-Body Leakage I GSS V DS = V, V GS = ± V Zero Gate Voltage Drain Current On-State Drain Current a I DSS I D(on) Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. N-Ch ± P-Ch ± V DS = V, V GS = V N-Ch V DS = - V, V GS = V P-Ch - V DS = V, V GS = V, T J = 8 C N-Ch V DS = - V, V GS = V, T J = 8 C P-Ch - V DS V, V GS = V N-Ch V DS - V, V GS = - V P-Ch - V GS = V, I D =.9 A N-Ch..8 V GS = - V, I D = -. A Drain-Source On-State Resistance a P-Ch.8.9 V GS =. V, I D =. A N-Ch.7 V GS = -. V, I D = -. A P-Ch..7 V DS = V, I D =.9 A Forward Transconductance a N-Ch.7 g fs V DS = - V, I D = -. A P-Ch. I S =.3 A, V GS = V Diode Forward Voltage a N-Ch.8. V SD I S = -.3 A, V GS = V P-Ch Dynamic b N-Ch.86. Total Gate Charge Q g N-Channel P-Ch.9. V DS = V, V GS = V, I D =.9 A N-Ch. Gate-Source Charge Q gs P-Channel P-Ch. V DS = - V, V GS = - V, I D = -. A N-Ch 8 Gate-Drain Charge Q gd P-Ch.7 N-Ch Turn-On Delay Time t d(on) N-Channel P-Ch V DD = V, R L = 3 N-Ch 8 Rise Time t r I D. A, V GEN = V, R g = 6 P-Ch 8 Turn-Off Delay Time Fall Time t d(off) t f P-Channel V DD = - V, R L = 3 N-Ch P-Ch 8 I D -. A, V GEN = - V, R g = 6 N-Ch 7 P-Ch 7 I F =.3 A, di/dt = A/µs N-Ch 3 Source-Drain Reverse Recovery Time t rr I F = -.3 A, di/dt = A/µs P-Ch V na µa A S V nc ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 7 S-8-Rev. E, 6-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
3 Si39DL N-CHANNEL TYPICAL CHARACTERISTICS ( C, unless otherwise noted).. V GS = V thru V.8.8 I D - Drain Current (A). 3 V - Drain Current (A) I D. T C = C.. C - C V DS - Drain-to-Source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance (Ω)..8. V GS =. V V GS = V C - Capacitance (pf) 3 C oss C iss C rss...8. I D - Drain Current (A) On-Resistance vs. Drain Current 8 6 V DS - Drain-to-Source Voltage (V) Capacitance - Gate-to-Source Voltage (V) 8 6 V DS = V I D =.9 A - On-Resistance (Normalized) V GS = V I D =.9 A V GS Q g - Total Gate Charge (nc) T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 7 S-8-Rev. E, 6-Apr- 3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
4 Si39DL N-CHANNEL TYPICAL CHARACTERISTICS ( C, unless otherwise noted).8. I D =.9 A I S - Source Current (A) T J = C T J = C - On-Resistance (Ω) V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.. Variance (V) V GS(th) -. I D = µa Power (W) T J - Temperature ( C) Time (s) Threshold Voltage Single Pulse Power Normalized Effective Transient Thermal Impedance. Duty Cycle = T JM - T A = P DM Z (t) thja Single Pulse. Surface Mounted Square Wave Pulse Duration (s) Notes: P DM Normalized Thermal Transient Impedance, Junction-to-Ambient t t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W Document Number: 7 S-8-Rev. E, 6-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
5 Si39DL N-CHANNEL TYPICAL CHARACTERISTICS ( C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty Cycle =... - Single Pulse -3 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - P-CHANNEL TYPICAL CHARACTERISTICS ( C, unless otherwise noted)..8 V GS = V thru V..8 T C = - C C I D - Drain Current (A). V - Drain Current (A) I D. C. V 3 V V DS - Drain-to-Source Voltage (V) Output Characteristics 3 V GS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance (Ω).... V GS =. V V GS = V C - Capacitance (pf) 6 C oss C iss...8. I D - Drain Current (A) On-Resistance vs. Drain Current C rss 8 6 V DS - Drain-to-Source Voltage (V) Capacitance Document Number: 7 S-8-Rev. E, 6-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
6 Si39DL P-CHANNEL TYPICAL CHARACTERISTICS ( C, unless otherwise noted).6 - Gate-to-Source Voltage (V) 8 6 V DS = V I D =. A - On-Resistance (Normalized)... V GS = V I D =. A V GS Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 3. I D =. A. - Source Current (A) I S T J = C T J = C - On-Resistance (Ω) V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. I D = µa Variance (V) V GS(th). Power (W) T J - Temperature ( C) Time (s) Threshold Voltage Single Pulse Power 6 Document Number: 7 S-8-Rev. E, 6-Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
7 Si39DL P-CHANNEL TYPICAL CHARACTERISTICS ( C, unless otherwise noted) Normalized Effective Transient Thermal Impedance... Duty Cycle =. 3. T JM - T A = P DM Z (t) thja Single Pulse. Surface Mounted Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W Normalized Effective Transient Thermal Impedance. Duty Cycle =... - Single Pulse -3 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?7. Document Number: 7 S-8-Rev. E, 6-Apr- 7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9
Complementary 20 V (D-S) MOSFET
SiDL Complementary V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).9 at V GS =. V. N-Channel.7 at V GS =.7 V..7. at V GS =. V..99 at V GS = -. V -. P-Channel -.6 at V GS = -.7 V
More informationP-Channel 1.8 V (G-S) MOSFET
Si7DL P-Channel. V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).9 at V GS = -.5 V ±.9 -.5 at V GS = -.5 V ±.7.5 at V GS = -. V ±. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET
More informationN- and P-Channel 30-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free
More informationN- and P-Channel 1.8 V (G-S) MOSFET
Si7DH N- and P-Channel.8 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A). at V GS =. V. N-Channel.8 at V GS =. V.. at V GS =.8 V.. at V GS = -. V -.86 P-Channel -.88 at V GS = -. V -.67.6 at V
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).95 at V GS = V. 3. at V GS = 4.5 V 9.4 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g Tested APPLICATIONS DC/DC
More informationN- and P-Channel 20-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A). at V GS =. V. N-Channel. at V GS =. V.. at V GS =. V.. at V GS = -. V -. P-Channel -. at V GS = -. V -.. at V GS = -.V -. FEATURES
More informationP-Channel 30-V (D-S) MOSFET
Si357BDV P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A).5 at V GS = - V - 5. - 3. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Available TrenchFET Power MOSFETs
More informationN- and P-Channel 2.5-V (G-S) MOSFET
N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) (A) N-Channel. at = 4.5 V ± 4.5.4 at =.5 V ± 3.9 P-Channel -.5 at = - 4.5 V ± 3.5.85 at = -.5 V ±.7 FEATURES Halogen-free Option Available
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V 7.5 3.3 at V GS = 4.5 V 6.5 FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power MOSFET PWM
More informationP-Channel 20-V (D-S) MOSFET with Schottky Diode
P-Channel -V (D-S) MOSFET with Schottky Diode Si3853DV PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = -.5 V ±.8 -.3 at V GS = -.5 V ±.3 FEATURES Halogen-free According to IEC 9-- Definition LITTLE
More informationN-Channel 60-V (D-S) MOSFET
Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-
More informationP-Channel 8-V (D-S) MOSFET
New Product P-Channel 8-V (D-S) MOSFET Si25ADS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).4 at V GS = - 4.5 V - 4. - 8.6 at V GS = - 2.5 V -.4 7.8 nc.88 at V GS = -.8 V - 2. FEATURES Halogen-free
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant
More informationAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFET
Automotive Dual P-Channel 3 V (D-S) 75 C MOSFET D 6 Marking Code: 9B TSOP-6 Dual D S 5 G Top View S 3 G FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for
More informationP-Channel 30-V (D-S), MOSFET
SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
More informationDual P-Channel 30-V (D-S) MOSFET
Dual P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = - V - 7. - 3.4 at V GS = - 4.5 V - 5.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power
More informationN- and P-Channel 30 V (D-S) MOSFET
N- and P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.47 at V GS = V 6..65 at V GS = 4.5 V 5.2 2.75 P-Channel - 3.89 at V GS = - V - 4.3.4 at V GS = -
More informationP-Channel 2.5-V (G-S) MOSFET
Si33BDV P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -.9 at V GS = -.7 V - 3.8. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition
More informationDual N-Channel 20 V (D-S) MOSFET
Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition
More informationN-Channel 100 V (D-S) MOSFET
Si9DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 5 D FEATURES
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 6 V (D-S) 75 C MOSFET TO-263 7-Lead D S FEATURES TrenchFET power MOSFET Package with low thermal resistance % R g and UIS tested AEC-Q qualified Material categorization: for definitions
More informationDual P-Channel 60-V (D-S) 175 MOSFET
Dual P-Channel 6-V (D-S) 75 MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).2 at V GS = - V - 3. - 6.5 at V GS = - 4.5 V - 2.8 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 3 2.5 mm.29 at V GS = V 4.5 a 3 nc.25 at V GS = V 4.5 a.33 at V GS = 4.5 V 4.5 a PowerPAK SC-7-L Dual 2.5 25
More informationComplementary N- and P-Channel 40-V (D-S) MOSFET
Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -
More informationP-Channel 40 V (D-S) 175 C MOSFET
P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC
More informationDual P-Channel 2.5-V (G-S) MOSFET
Dual P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition Compliant to RoHS Directive
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions
More informationN-Channel 20 V (D-S) MOSFET
SiH N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A). at V GS =. V.9.7 at V GS =. V..9 at V GS =.8 V. SOT- SC-7 (-LEAS) FEATURES Halogen-free According to IEC 9-- efinition TrenchFET Power
More informationN-Channel 150-V (D-S) MOSFET
N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power
More informationAutomotive N-Channel 200 V (D-S) 175 C MOSFET
Automotive N-Channel 2 V (D-S) 75 C MOSFET SQM942E FEATURES TO-263 Top View G D S TrenchFET power MOSFET Package with low thermal resistance AEC-Q qualified % R g and UIS tested Material categorization:
More informationAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFET
Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 4 R DS(on) ( ) at V GS = V.35 R DS(on) ( ) at V GS = 4.5 V.48 I D (A) 8 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q
More informationAutomotive P-Channel 40 V (D-S) 175 C MOSFET
Automotive P-Channel 4 V (D-S) 75 C MOSFET SQM43EL TO-263 S G S D G Top View D P-Channel MOSFET PRODUCT SUMMARY V DS (V) -4 R DS(on) () at V GS = - V.3 R DS(on) () at V GS = -4.5 V.38 I D (A) -2 Configuration
More informationDual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si468DY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) Channel- 3 Channel-2 3.7 at V GS = V 8..95 at V GS = 4.5 V 7.5. at V GS = V 5.2.5
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) 5.232 at V GS = V 36.8.272 at V GS = 7.5 V 34 6. nc PowerPAK SO-8L Single FEATURES ThunderFET technology optimizes
More informationN-Channel 60 V (D-S), MOSFET
N-Channel 6 V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).3 at V GS = V 9. 6 6.5 nc.45 at V GS = 4.5 V 7.6 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationN-Channel 40 V (D-S) 175 C MOSFET
N-Channel 4 V (D-S) 75 C MOSFET 6.5 mm PRODUCT SUMMARY PowerPAK SO-8L Single Top View 5.3 mm V DS (V) 4 R DS(on) max. ( ) at V GS = V.265 R DS(on) max. ( ) at V GS = 4.5 V.36 Q g typ. (nc) 23 I D (A) a
More informationAutomotive P-Channel 40 V (D-S) 175 C MOSFET
Automotive P-Channel 4 V (D-S) 75 C MOSFET SQ39ES PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - V.75 R DS(on) ( ) at V GS = - 4.5 V.45 I D (A) - 4.6 Configuration Single FEATURES Halogen-free According
More informationDual N-Channel 20-V (D-S) MOSFET
Si99CDY Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V nc SO- FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (D-S) MOSFET SUD5N3-12P-GE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a.12 at V GS = 1 V 16.8 3.175 at V GS = 4.5 V 13.9 FEATURES TrenchFET power MOSFET 1 % R g and UIS tested Material
More informationAutomotive Dual N-Channel 20 V (D-S) 175 C MOSFET
SQ9EEH Automotive Dual N-Channel V (D-S) 75 C MOSFET D 6 SOT-363 SC-7 Dual (6 leads) S 4 G 5 S Top View G 3 D FEATURES TrenchFET power MOSFET AEC-Q qualified % R g tested Typical ESD protection: 8 V Material
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si9933CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = -.5 V - - 2 8.9 at V GS = - 2.5 V - FEATURES Halogen-free Option Available
More informationDual N-Channel 30 V (D-S) MOSFETs
Dual N-Channel 3 V (D-S) MOSFETs 3 mm mm Top View PRODUCT SUMMARY PowerPAIR 3 x 3 3 mm D Bottom View CHANNEL- CHANNEL-2 V DS (V) 3 3 R DS(on) max. ( ) at V GS = V.285.5 R DS(on) max. ( ) at V GS = 4.5
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si93CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) - 2.92 at V GS = - V - 8.33 at V GS = -.5 V - 8 2 SO-8 S 8 D G 2 7 D FEATURES Halogen-free
More informationN-Channel 12 V (D-S) MOSFET
N-Channel 2 V (D-S) MOSFET SiUD42ED.4 mm PowerPAK 86 Single D 3 FEATURES TrenchFET power MOSFET Ultra small.8 mm x.6 mm outline Ultra thin.4 mm max. height Typical ESD protection 5 V (HBM).8 mm Top View.6mm
More informationDual P-Channel 40 V (D-S) MOSFET
Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) d Q g (Typ.) -.27 at V GS = - V - 8.3 at V GS = -.5 V - 7.2 2.7 nc SO-8 S 8 D G 2 7 D S 2 3 D 2 G 2 5 D 2 FEATURES Halogen-free
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested
More informationN-Channel 30-V (D-S) MOSFET
SiDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).68 at V GS =. V.6 a nc.8 at V GS =. V. TO-6 (SOT-) FEATURES Halogen-free According to IEC 69-- Definition TrenchFET
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition
More informationDual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si483CDY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) Channel- 3 Channel-2 3.2 at V GS = V 8..25 at V GS = 4.5 V 8..2 at V GS = V 8..25
More informationP-Channel 12 V (D-S) MOSFET
Si333DDS P-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.).8 at V GS = - 4.5 V - 6 e.3 at V GS = - 3.7 V - 6 e -.4 at V GS = -.5 V - 6 e 9 nc.63 at V GS =
More informationN-Channel 200 V (D-S) 175 C MOSFET
N-Channel 2 V (D-S) 75 C MOSFET SUP942E TO-22AB S D Top View G PRODUCT SUMMARY V DS (V) 2 R DS(on) max. ( ) at V GS = V.52 R DS(on) max. ( ) at V GS = 7.5 V.69 Q g typ. (nc) 58 I D (A) 9 Configuration
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (D-S) MOSFET 3.3 mm Top View PRODUCT SUMMARY PowerPAK 22-8 Dual 3.33 mm D 2 D 2 6 5 4 G Bottom View V DS (V) 3 R DS(on) max. (Ω) at V GS = 4.5 V.22 R DS(on) max. (Ω) at V GS = 2.5 V.26 Q
More informationN-Channel 40-V (D-S) MOSFET
SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition
More informationDual N-Channel 25 V (D-S) MOSFETs
Dual N-Channel 25 V (D-S) MOSFETs 3 mm mm Top View PRODUCT SUMMARY PowerPAIR 3 x 3 3 mm D Bottom View CHANNEL- CHANNEL-2 V DS (V) 25 25 R DS(on) max. ( ) at V GS = V.83.424 R DS(on) max. ( ) at V GS =
More informationN-Channel 40 V (D-S) MOSFET
N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) 4.5 at V GS = V 4.3.54 at V GS = 4.5 V 4..7 at V GS =.5 V 3.6 G S TO-36 (SOT-3) 3 D 3.8 nc FEATURES TrenchFET
More informationN-Channel 20 V (D-S) MOSFET
SiCDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) e Q g (Typ.).8 at V GS = 4. V 6 a.6 at V GS =. V 6 a 8.8 nc.44 at V GS =.8 V.6 FEATURES Halogen-free According to IEC 649--
More informationP-Channel 20 V (D-S) MOSFET
Si33CDS P-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) -.39 at V GS = -4.5 V -6 e.5 at V GS = -.5 V -5.8.63 at V GS = -.8 V -5. TO-36 (SOT-3) 9 nc FEATURES TrenchFET
More informationN-Channel 2.5-V (G-S) Battery Switch, ESD Protection
N-Channel.-V (G-S) Battery Switch, ESD Protection Si694AEDQ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).33 at V GS = 4. V 4.6 8.38 at V GS = 3. V 4.3.4 at V GS =. V 4. FEATURES Halogen-free Low R DS(on)
More informationN-Channel 20 V (D-S) MOSFET
Si3DDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) Max. I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES Halogen-free According to IEC 69-- Definition TrenchFET
More informationAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFET
Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D 2 D 4 G 2 3 S 2 2 G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationP-Channel 100-V (D-S) 175 C MOSFET
P-Channel -V (D-S) 75 C MOSFET SUD5P-43L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).43 at V GS = - V - 37-54 nc.48 at V GS = - 4.5 V - 35 FEATURES TrenchFET Power MOSFET Compliant to RoHS
More informationDual N-Channel 12-V (D-S) MOSFET
New Product Dual N-Channel -V (D-S) MOSFET SiA9DJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V.5. at V GS =.5 V.5.5 nc.3 at V GS =. V.5 PowerPAK SC-7- Dual FEATURES Halogen-free
More informationN-Channel 60 V (D-S) MOSFET
SiEDL N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 6 SOT- SC-7 (-LEADS). at V GS = V. at V GS =. V. 8 at V GS = V. FEATURES Halogen-free According to IEC 69-- Definition TrenchFET
More informationP-Channel 30 V (D-S) MOSFET
Si369DS P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) - 3.9 at V GS = - V - 7.6.34 at V GS = - 6 V - 7.4 at V GS = - 4.5 V - 6.5 G TO-36 (SOT-3) 3 D.4 nc FEATURES
More informationDual N-Channel 30 V (D-S) MOSFETs
Dual N-Channel 3 V (D-S) MOSFETs PRODUCT SUMMARY Channel- 3 Channel-2 3 V DS (V) R DS(on) ( ) (Max.) I D (A) Q g (Typ.).2 at V GS = V 6 a 6.8 nc.5 at V GS =.5 V 6 a.37 at V GS = V 28 a 32 nc.5 at V GS
More informationDual P-Channel 20 V (D-S) MOSFET
Si3CX Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).756 at V GS = -.5 V -.35 -.38 at V GS = -.5 V -.35. at V GS = -.8 V -. nc. at V GS = -.5 V -.5 FEATURES Halogen-free
More informationN-Channel 30-V (D-S) MOSFET with Sense Terminal
SUM5N3-3LC N-Channel 3-V (D-S) MOSFET with Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) (Ω) (A).3 at V GS = V 5 a 3.7 at V GS =.5 V 8 a D PAK-5 FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode
More informationN-Channel 20-V (D-S) MOSFET
Si4EDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = 4.5 V 4.9.4 at V GS =.5 V 4.4.5 at V GS =.8 V.9 FEATURES Halogen-free According to IEC 649-- Available TrenchFET
More informationP-Channel 20-V (D-S) MOSFET
P-Channel -V (D-S) MOSFET DTE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V -. -.7 at V GS = -.5 V - 3.6 FEATURES Halogen-free RoHS COMPLIANT TO-6AA (TO-9) S* S G G D 3 Top View D P-Channel
More informationN-Channel 100 V (D-S) MOSFET
Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
More informationN-Channel 40 V (D-S) MOSFET
N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a, g Q g (Typ.) 4.235 at V GS = V 6.32 at V GS = 4.5 V 6 32 nc PowerPAK SO-8L Single FEATURES TrenchFET Gen IV power MOSFET
More informationN-Channel 30-V (D-S) MOSFET
Si36BDS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).7 at V GS = V. 3 3..65 at V GS =.5 V 3.5 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g
More informationP-Channel 60-V (D-S) MOSFET
New Product P-Channel 60-V (D-S) MOSFET Si309CDS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 60 0.345 at V GS = - 0 V -.6 0.450 at V GS = - 4.5 V -.4 TO-36 (SOT-3).7 nc FEATURES Halogen-free
More informationP-Channel 8 V (D-S) MOSFET
Si9DS P-Channel 8 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 8. at V GS = - 4.5 V - 6 e.6 at V GS = -.5 V - 6 e.48 at V GS = -.8 V - 5.9.68 at V GS = -.5 V - 5.
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) - 2.32 at V GS = - 4.5 V - 5.9.4 at V GS = - 2.5 V - 5.2.675 at V GS = -.8 V - 4.3 G TO-236 (SOT-23) 3.8 nc FEATURES
More informationCommon - Drain Dual N-Channel 30 V (S1-S2) MOSFET
SiSFDN Common - Drain Dual N-Channel 3 V (S-S2) MOSFET 3.3 mm Top View PowerPAK 22-8SCD S S 8 S 2 7 S 2 6 5 3.3 mm PRODUCT SUMMARY V SS2 (V) 3 R SS2(on) max. () at V GS = V.5 R SS2(on) max. () at V GS
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).5 at V GS = V 7.9. at V GS = 6. V 7.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs 75 C Maximum Junction
More informationAutomotive N-Channel 100 V (D-S) 175 C MOSFET
Automotive N-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () at V GS = V.34 R DS(on) () at V GS = 4.5 V.4 I D (A) 35 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET SUA76E PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.).6 at V GS = V 56.6.7 at V GS = 7.5 V 54.4 53.5 nc Thin-Lead TO-22 FULLPAK FEATURES ThunderFET power MOSFET Q
More informationN- and P-Channel 20-V (D-S) MOSFET
SiA59EDJ N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) N-Channel P-Channel -. at V GS =.5 V.5 a 3.7 nc.5 at V GS =.5 V.5 a.9 at V GS = -.5 V -.5 a 5.3 nc.37
More informationDual N-Channel 60 V (D-S) MOSFET
Dual N-Channel 60 V (D-S) MOSFET Si96DL PRODUCT SUMMARY V DS (V) R DS(on) (Ω) MAX. I D (A) Q g (nc) TYP. 60.4 at V GS = 0 V 0.37 3 at V GS = 4.5 V 0.5 D 6 SOT-363 SC-70 Dual (6 leads) S 4 G 5 0.47 FEATURES
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET 6 Marking code: BQ TSOP-6 Single S 4 5 Top View PROUCT SUMMARY V S (V) -2 R S(on) max. ( ) at V GS = -4.5 V.24 R S(on) max. ( ) at V GS = -2.5 V.32 R S(on) max. ( ) at V GS =
More informationDual N-Channel 20 V (D-S) MOSFET
Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).35 at V GS = 4.5 V..36 at V GS =.5 V SOT-363 SC-7 (6-LEADS).9 FEATURES Halogen-free According to IEC 649-- Definition
More informationN- and P-Channel 20 V (D-S) MOSFET
N- and P-Channel V (D-S) MOSFET DTS5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel 99 at V GS = 4.5 V..4 at V GS =.5 V.9 P-Channel - 89 at V GS = - 4.5 V -.5 73 at V GS = -.5 V -.4 FEATURES Halogen-free
More informationP-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
More informationN-Channel 40-V (D-S), 175 C MOSFET
N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-9H PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A) c Q g (Typ) 4.9 at V GS = V 5 55 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature High Threshold Voltage
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) -6 R DS(on) (Ω) at V GS = - V.93 R DS(on) (Ω) at V GS = -4.5 V.33 I D (A) - Configuration Single TO-22AB FEATURES TrenchFET power MOSFET
More informationP-Channel 40 V (D-S) MOSFET
P-Channel 4 V (-S) MOSFET Si44FY 8 7 6 SO-8 Single 5 FEATURES TrenchFET Gen III p-channel power MOSFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationN-Channel 250 V (D-S) 175 C MOSFET
SUP4N25-6 N-Channel 25 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) (A) Q g (Typ) 25 TO-22AB.6 at V GS = V 4.64 at V GS = 6 V 38.7 95 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature
More informationAutomotive P-Channel 12 V (D-S) 175 C MOSFET
Automotive P-Channel 2 V (D-S) 75 C MOSFET SQJ4EP 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for definitions
More informationN-Channel 250 V (D-S) 175 C MOSFET
N-Channel 25 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 25.35 at V GS = V 63.325 at V GS = 7.5 V 62 TO-22AB Top View S D G Ordering Information: -GE3 (lead (Pb)-free
More informationN-Channel 60 V (D-S), 175 C MOSFET, Logic Level
N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) MAX. I D (A) a Q g (TYP.) 5.77 at V GS = V 7.7.85 at V GS = 7.5 V 7.6.25 at V GS = 6 V 4 PowerPAK SC-7-6L Single 4.3 nc 2 D 3 D G Top View
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 30-V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 0.90 at V GS = - 0 V -.7-30 0.330 at V GS = - 4.5 V -. nc FEATURES Halogen-free According to IEC 649-- Available
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 8 R DS(on) () at V GS = V.3 I D (A) 5 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single FEATURES TrenchFET power MOSFET
More informationDual P-Channel 12-V (D-S) MOSFET
Dual P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -. at V GS = -.5 V -.5 a.5 nc. at V GS = -.5 V -.5 a. at V GS = -.8 V - 3.5 PowerPAK SC-7- Dual FEATURES Halogen-free
More informationAutomotive N-Channel 300 V (D-S) 175 C MOSFET
Automotive N-Channel 300 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = V 0.330 I D (A) Configuration Single TO-252 D FEATURES TrenchFET power MOSFET Package with low thermal
More informationN-Channel 20 V (D-S) MOSFET
Si3CDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES TrenchFET Power MOSFET Material categorization: For definitions
More informationAutomotive P-Channel 80 V (D-S) 175 C MOSFET
Automotive P-Channel 8 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 8 R DS(on) () at V GS = - 1 V.25 R DS(on) () at V GS = - 4.5 V.31 I D (A) - 5 Configuration Single FEATURES TrenchFET Power MOSFET
More informationN-Channel 100 V (D-S) MOSFET
Si8DS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A).5 at V GS = V.5 FEATURES Halogen-free According to IEC 649-- Definition % R g and UIS Tested TrenchFET Power MOSFET Compliant
More information