Automotive N-Channel 60 V (D-S) 175 C MOSFET

Size: px
Start display at page:

Download "Automotive N-Channel 60 V (D-S) 175 C MOSFET"

Transcription

1 Automotive N-Channel 6 V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) 6 R S(on) () at V GS = V.98 R S(on) () at V GS = 4.5 V.22 I (A) 2 Configuration Single SO-8 FEATURES TrenchFET Power MOSFET AEC-Q Qualified c % R g and UIS Tested Material categorization: For definitions of compliance please see S 8 S 2 7 G S 3 6 G 4 5 S Top View N-Channel MOSFET ORERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 -T-GE3 ABSOLUTE MAXIMUM RATINGS (, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source Voltage V S 6 Gate-Source Voltage V GS ± 2 V Continuous rain Current 2 I 6.9 Continuous Source Current (iode Conduction) I S 6.2 A Pulsed rain Current a I M 25 Single Pulse Avalanche Current I AS 3 L =. mh Single Pulse Avalanche Energy E AS 26 mj T Maximum Power issipation a C = 25 C 6.8 P 2.2 W Operating Junction and Storage Temperature Range T J, T stg - 55 to + 75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b R thja 85 Junction-to-Foot (rain) R thjf 22 C/W Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. When mounted on " square PCB (FR-4 material). c. Parametric verification ongoing. S3-95-Rev. A,6-May-3 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

2 SPECIFICATIONS (, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source Breakdown Voltage V S V GS =, I = 25 μa V Gate-Source Threshold Voltage V GS(th) V S = V GS, I = 25 μa Gate-Source Leakage I GSS V S = V, V GS = ± 2 V - - ± na Zero Gate Voltage rain Current I SS V GS = V V S = 6 V, T J = 25 C μa V GS = V V S = 6 V - -. V GS = V V S = 6 V, T J = 75 C On-State rain Current a I (on) V GS = V V S 5 V A Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = V I = 6. A rain-source On-State Resistance a R S(on) V GS = V I = 6. A, T J = 25 C V GS = V I = 6. A, T J = 75 C V GS = 4.5 V I = 5.9 A Forward Transconductance b g fs V S = 5 V, I = 6. A S ynamic b Input Capacitance C iss Output Capacitance C oss V GS = V V S = 25 V, f = MHz pf Reverse Transfer Capacitance C rss Total Gate Charge c Q g Gate-Source Charge c Q gs V GS = V V S = 3 V, I = 6 A nc Gate-rain Charge c Q gd Gate Resistance R g f = MHz Turn-On elay Time c t d(on) Rise Time c t r V = 3 V, R L = Turn-Off elay Time c t d(off) I A, V GEN = V, R g = ns Fall Time c t f Source-rain iode Ratings and Characteristics b Pulsed Current a I SM A Forward Voltage V S I F =.7 A, V GS = V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S3-95-Rev. A,6-May-3 2 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

3 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 4 V GS = V thru 4 V V GS = 3 V T C = - 55 C V S - rain-to-source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics T C = - 55 C R S(on) - On-Resistance (Ω) V GS = 4.5 V V GS = V V GS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. rain Current 25 T C = - 55 C 25 2 g fs - Transconductance (S) C - Capacitance (pf) 5 5 C iss C oss C rss V S - rain-to-source Voltage (V) Transconductance Capacitance S3-95-Rev. A,6-May-3 3 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

4 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) V GS - Gate-to-Source Voltage (V) I = 6 A V S = 3 V I S - Source Current (A).. T J = 5 C T J = 25 C Q g - Total Gate Charge (nc) Gate Charge V S - Source-to-rain Voltage (V) Source rain iode Forward Voltage R S(on) - On-Resistance (Normalized) I = A V GS = 4.5 V V GS = V V GS(th) Variance (V) I = 25 μa I = 5 ma T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature T J - Temperature ( C) Threshold Voltage. 9 R S(on) - On-Resistance (Ω) T J = 5 C T J = 25 C V S - rain-to-source Voltage (V) I = ma V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage T J - Junction Temperature ( C) rain Source Breakdown vs. Junction Temperature S3-95-Rev. A,6-May-3 4 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

5 THERMAL RATINGS (T A = 25 C, unless otherwise noted) μs I M Limited. Single Pulse Limited by R S(on) * BVSS Limited ms ms ms s s, C... V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area uty Cycle =.5 Normalized Effective Transient Thermal Impedance t t 2 t. uty Cycle, = t 2 2. Per Unit Base =R thja = 85 C/W 3. T JM -T A =P M Z (t) thja. Single Pulse 4. Surface Mounted Square Wave Pulse uration (s) Notes: P M Normalized Thermal Transient Impedance, Junction-to-Ambient S3-95-Rev. A,6-May-3 5 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

6 THERMAL RATINGS (T A = 25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S3-95-Rev. A,6-May-3 6 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

7 Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT SPECIFICATIONS AN ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVE Revision: 8-Feb-7 ocument Number: 9

8 Mouser Electronics Authorized istributor Click to View Pricing, Inventory, elivery & Lifecycle Information: Vishay: -T_GE3

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V 2 R S(on) () at V GS = 4.5 V 5 I (A).7 Configuration Single Package SC-7 SOT-33 SC-7 Single ( leads) S 4 5 FEATURES

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V.42 R S(on) () at V GS = 4.5 V.3 I (A) 7 Configuration Single TSOP- Single S 4 5 Top View Marking Code: 8Axxx 2 3 G

More information

P-Channel 40 V (D-S) MOSFET

P-Channel 40 V (D-S) MOSFET P-Channel 4 V (-S) MOSFET Si44FY 8 7 6 SO-8 Single 5 FEATURES TrenchFET Gen III p-channel power MOSFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel V (-S) 75 C MOSFET SQ7AENW PROUCT SUMMARY V S (V) R S(on) (Ω) at V GS = V.3 R S(on) (Ω) at V GS =.5 V.8 I (A) 8 Configuration Single PowerPAK -8W Single 5 7 8 FEATURES TrenchFET power

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (-S) 75 C MOSFET SQ75AENW PROUCT SUMMARY V S (V) -6 R S(on) (Ω) at V GS = - V.65 R S(on) (Ω) at V GS = -.5 V.9 I (A) -6 Configuration Single Package PowerPAK -W PowerPAK -W Single

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-S) MOSFET 6 Marking code: BQ TSOP-6 Single S 4 5 Top View PROUCT SUMMARY V S (V) -2 R S(on) max. ( ) at V GS = -4.5 V.24 R S(on) max. ( ) at V GS = -2.5 V.32 R S(on) max. ( ) at V GS =

More information

N-Channel 25 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET N-Channel 25 V (-S) MOSFET SiRA32P 6.5 mm Top View PROUCT SUMMARY PowerPAK SO-8 Single 8 5.5 mm 4 G Bottom View V S (V) 25 R S(on) max. () at V GS = V.2 R S(on) max. () at V GS = 4.5 V.83 Q g typ. (nc)

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel 60 V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) 60 R S(on) (Ω) at V GS = 0 V 20 R S(on) (Ω) at V GS = 4.5 V 50 I (A).7 Configuration Single Package SC-70 6 SOT-363 SC-70 Single (6 leads)

More information

Automotive P-Channel 150 V (D-S) 175 C MOSFET

Automotive P-Channel 150 V (D-S) 175 C MOSFET Automotive P-Channel 5 V (-S) 75 C MOSFET SQS8ENW. mm Top View Marking Code: Q6 PowerPAK -8W Single. mm 5 6 7 8 S G Bottom View S S FEATURES TrenchFET power MOSFET AEC-Q qualified d % R g and UIS tested

More information

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).5 at V GS = V 7.9. at V GS = 6. V 7.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs 75 C Maximum Junction

More information

Automotive N-Channel 150 V (D-S) 175 C MOSFET

Automotive N-Channel 150 V (D-S) 175 C MOSFET Automotive N-Channel 5 V (-) 75 C MOFET Q48EY FEATURE 8 7 6 O-8 ingle 5 TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992

More information

Automotive P-Channel 40 V (D-S) 175 C MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET Automotive P-Channel 4 V (D-S) 75 C MOSFET SQ39ES PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - V.75 R DS(on) ( ) at V GS = - 4.5 V.45 I D (A) - 4.6 Configuration Single FEATURES Halogen-free According

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET SiSH4N 3.3 mm Top View PowerPAK -8SH 3.3 mm.9 mm 5 6 7 8 4 G Bottom View 3 S S S FEATURES TrenchFET power MOSFET % R g and UIS tested Material categorization: for definitions

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET SiH N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A). at V GS =. V.9.7 at V GS =. V..9 at V GS =.8 V. SOT- SC-7 (-LEAS) FEATURES Halogen-free According to IEC 9-- efinition TrenchFET Power

More information

Automotive N-Channel 200 V (D-S) 175 C MOSFET

Automotive N-Channel 200 V (D-S) 175 C MOSFET Automotive N-Channel 2 V (D-S) 75 C MOSFET SQM942E FEATURES TO-263 Top View G D S TrenchFET power MOSFET Package with low thermal resistance AEC-Q qualified % R g and UIS tested Material categorization:

More information

Automotive P-Channel 40 V (D-S) 175 C MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET Automotive P-Channel 4 V (D-S) 75 C MOSFET SQM43EL TO-263 S G S D G Top View D P-Channel MOSFET PRODUCT SUMMARY V DS (V) -4 R DS(on) () at V GS = - V.3 R DS(on) () at V GS = -4.5 V.38 I D (A) -2 Configuration

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) -6 R DS(on) (Ω) at V GS = - V.93 R DS(on) (Ω) at V GS = -4.5 V.33 I D (A) - Configuration Single TO-22AB FEATURES TrenchFET power MOSFET

More information

Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET

Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET SQ9EEH Automotive Dual N-Channel V (D-S) 75 C MOSFET D 6 SOT-363 SC-7 Dual (6 leads) S 4 G 5 S Top View G 3 D FEATURES TrenchFET power MOSFET AEC-Q qualified % R g tested Typical ESD protection: 8 V Material

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET 3.3 mm mm Top View PROUCT SUMMARY PowerPAK -8S 3.3 mm 3 4 S G Bottom View V S (V) 3 R S(on) max. () at V GS = V.48 R S(on) max. () at V GS = 4.5 V.6 Q g typ. (nc) 4 I (A) 5 a

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-S) MOSFET SiS45NT 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) -2 R S(on) max. () at V GS = - V.4 R S(on) max. () at V GS = -4.5 V.55 R S(on) max.

More information

Automotive N-Channel 300 V (D-S) 175 C MOSFET

Automotive N-Channel 300 V (D-S) 175 C MOSFET Automotive N-Channel 300 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = V 0.330 I D (A) Configuration Single TO-252 D FEATURES TrenchFET power MOSFET Package with low thermal

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET Si4848Y N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).8 at V GS = V 3.7.9 at V GS = 6. V 3. FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs Compliant

More information

Automotive P-Channel 80 V (D-S) 175 C MOSFET

Automotive P-Channel 80 V (D-S) 175 C MOSFET Automotive P-Channel 8 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 8 R DS(on) () at V GS = - 1 V.25 R DS(on) () at V GS = - 4.5 V.31 I D (A) - 5 Configuration Single FEATURES TrenchFET Power MOSFET

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () I (A) b, c Q g (TYP.) 3.2 at V GS = V..24 at V GS = 4.5 V 9.2 PowerPAK SC-7-6L Single S 4 5 S 6 5.6 FEATURES TrenchFET power MOSFET Thermally

More information

Automotive P-Channel 12 V (D-S) 175 C MOSFET

Automotive P-Channel 12 V (D-S) 175 C MOSFET Automotive P-Channel 2 V (D-S) 75 C MOSFET SQJ4EP 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for definitions

More information

N-Channel 250 V (D-S) MOSFET

N-Channel 250 V (D-S) MOSFET N-Channel 25 V (-S) MOSFET 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) 25 R S(on) max. ( ) at V GS = V.73 R S(on) max. ( ) at V GS = 7.5 V.9 Q g typ. (nc) 8. I (A)

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel 0 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 0 R DS(on) ( ) at V GS = V 0.038 R DS(on) ( ) at V GS = 4.5 V 0.050 I D (A) 23 Configuration Single Package PowerPAK SO-8L PowerPAK SO-8L

More information

Automotive N-Channel 30 V (D-S) 175 C MOSFET

Automotive N-Channel 30 V (D-S) 175 C MOSFET Automotive N-Channel V (-S) 75 C MOSFET SQ47AEH PROUCT SUMMARY V S (V) R S(on) () at V GS = 4.5 V.65 R S(on) () at V GS =.5 V.95 I (A).7 Configuration Single FEATURES TrenchFET power MOSFET AEC-Q qualified

More information

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 4 R DS(on) ( ) at V GS = V.35 R DS(on) ( ) at V GS = 4.5 V.48 I D (A) 8 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel 6 V (D-S) 75 C MOSFET TO-263 7-Lead D S FEATURES TrenchFET power MOSFET Package with low thermal resistance % R g and UIS tested AEC-Q qualified Material categorization: for definitions

More information

Automotive N-Channel 40 V (D-S) 175 C MOSFET

Automotive N-Channel 40 V (D-S) 175 C MOSFET Automotive N-Channel 40 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 40 R DS(on) () at V GS = 10 V 0.0063 R DS(on) () at V GS = 4.5 V 0.0075 I D (A) 58 Configuration Single PowerPAK SO-8L Single D FEATURES

More information

Automotive N-Channel 40 V (D-S) 175 C MOSFET

Automotive N-Channel 40 V (D-S) 175 C MOSFET Automotive N-Channel 4 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 4 R DS(on) ( ) at V GS = 1 V.41 R DS(on) ( ) at V GS = 4.5 V.52 I D (A) 32 Configuration Single PowerPAK SO-8L Single D FEATURES TrenchFET

More information

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D 2 D 4 G 2 3 S 2 2 G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:

More information

Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET

Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET Automotive Dual P-Channel 3 V (D-S) 75 C MOSFET D 6 Marking Code: 9B TSOP-6 Dual D S 5 G Top View S 3 G FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 6 R DS(on) (Ω) at V GS = - 1 V.85 R DS(on) (Ω) at V GS = - 4.5 V 15 I D (A) - 8 Configuration Single FEATURES Halogen-free According

More information

N-Channel 25 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET N-Channel 25 V (-S) MOSFET 2.5 mm Top View Marking code: A5 PowerPAK SC-7-6L Single 2.5 mm S 4 S 7 5 6 2 3 G Bottom View FEATURES TrenchFET Gen IV power MOSFET Optimized Q g, Q gd, and Q gd /Q gs ratio

More information

Automotive P-Channel 30 V (D-S) 175 C MOSFET

Automotive P-Channel 30 V (D-S) 175 C MOSFET Automotive P-Channel 3 V (-) 75 C MOFET Q443EY PROUCT UMMARY V (V) - 3 R (on) () at V G = - V.3 R (on) () at V G = - 4.5 V.5 I (A) -.8 Configuration ingle FEATURE TrenchFET Power MOFET % R g and UI Tested

More information

Automotive N-Channel 40 V (D-S) 175 C MOSFET

Automotive N-Channel 40 V (D-S) 175 C MOSFET Automotive N-Channel 40 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 40 R DS(on) ( ) at V GS = 10 V 0.0041 I D (A) 50 Configuration Single TO-263 FEATURES TrenchFET Power MOSFET Package with Low Thermal

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) at V GS = V.38 I D (A) 2 Configuration TO-263 Single D FEATURES TrenchFET Power MOSFET Package with Low Thermal Resistance

More information

Automotive P-Channel 30 V (D-S) 175 C MOSFET

Automotive P-Channel 30 V (D-S) 175 C MOSFET Automotive P-Channel 3 V (-) 75 C MOFET Q4435EY PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.8 R (on) ( ) at V G = - 4.5 V.3 I (A) - 5 Configuration ingle FEATURE Halogen-free According to IEC 6249-2-2

More information

Automotive P-Channel 80 V (D-S) 175 C MOSFET

Automotive P-Channel 80 V (D-S) 175 C MOSFET Automotive P-Channel 8 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) - 8 R DS(on) (Ω) at V GS = - V.25 R DS(on) (Ω) at V GS = - 6 V.29 I D (A) - 32 Configuration Single PowerPAK SO-8L Single S FEATURES

More information

Automotive P-Channel 40 V (D-S) 175 C MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET Automotive P-Channel 4 V (D-S) 175 C MOSFET SQD5P4-9L PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - 1 V.94 R DS(on) ( ) at V GS = - 4.5 V.19 I D (A) - 5 Configuration TO-252 Single S FEATURES Halogen-free

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si7655AN P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.).36 at V GS = - V - e - 2.8 at V GS = -.5 V - e 72 nc.9 at V GS = - 2.5 V - e PowerPAK 22-8S FEATURES TrenchFET

More information

Automotive N-Channel 30 V (D-S) 175 C MOSFET

Automotive N-Channel 30 V (D-S) 175 C MOSFET Automotive N-Channel 3 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 3 R DS(on) () at V GS = V.4 R DS(on) () at V GS = 4.5 V.3 I D (A) 8 Configuration Single D 3 SOT-3 (TO-36) G Top View S G D S N-Channel

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 60 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) -60 R DS(on) () at V GS = - V 0.0250 R DS(on) () at V GS = -4.5 V 0.0350 I D (A) -36 Configuration Single Package PowerPAK SO-8L FEATURES

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 75 C MOSFET SQM2P6-7L PRODUCT SUMMARY V DS (V) - 6 R DS(on) () at V GS = - V.67 R DS(on) () at V GS = - 4.5 V.88 I D (A) - 2 Configuration TO-263 Single S FEATURES TrenchFET

More information

Automotive N-Channel 300 V (D-S) 175 C MOSFET

Automotive N-Channel 300 V (D-S) 175 C MOSFET Automotive N-Channel 300 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = 0 V 0.097 I D (A) 35 Configuration Single Package TO-263 D TO-263 FEATURES TrenchFET power MOSFET Package

More information

Automotive P-Channel 30 V (D-S) 175 C MOSFET

Automotive P-Channel 30 V (D-S) 175 C MOSFET Automotive P-Channel 3 V (-) 75 C MOFET PROUCT UMMARY V (V) - 3 R (on) () at V G = - V.3 R (on) () at V G = - 4.5 V.52 I (A) -.8 Configuration ingle FEATURE TrenchFET Power MOFET % R g and UI Tested AEC-Q

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (D-S) MOSFET SUA76E PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.).6 at V GS = V 56.6.7 at V GS = 7.5 V 54.4 53.5 nc Thin-Lead TO-22 FULLPAK FEATURES ThunderFET power MOSFET Q

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET SiAJ N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) a Q g (Typ.).83 at V GS = V.3.3 at V GS =.5 V 9 PowerPAK SC-7-L-Single 5 2.5 mm S S 2 3 G 2.5 mm Bottom View Ordering Information:

More information

P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET New Product SiL P-Channel.-V (G-S) MOSFET PROUCT SUMMARY V S (V) r S(on) (Ω) I 8 at V GS = -. V ±. -. at V GS = -.6 V ±..6 at V GS = -. V ±. FEATURES TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 60 V (D-S) 75 C MOSFET SQ309ES PRODUCT SUMMARY V DS (V) - 60 R DS(on) ( ) at V GS = - 0 V 0.335 R DS(on) ( ) at V GS = - 4.5 V 0.500 I D (A) -.7 Configuration Single FEATURES Halogen-free

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 75 C MOSFET SQ36ES PRODUCT SUMMARY V DS (V) -6 R DS(on) () at V GS = - V.77 R DS(on) () at V GS = -4.5 V.46 I D (A) -.8 Configuration Single D 3 SOT-3 (TO-36) G Top View

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel V (D-S) 75 C MOSFET SQM76EL PRODUCT SUMMARY V DS (V) R DS(on) () at V GS = V.59 R DS(on) () at V GS = 4.5 V.8 I D (A) 75 Configuration Single Package TO-263 D TO-263 FEATURES TrenchFET

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () (MAX.) I (A) a Q g (TYP.) 3.84 at V GS = V 37.8.4 at V GS = 4.5 V 32.5 PowerPAK SC-7-6L Single S 4 5 6 8.2 nc FEATURES TrenchFET Gen IV power

More information

Automotive N-Channel 80 V (D-S) 175 C MOSFET

Automotive N-Channel 80 V (D-S) 175 C MOSFET Automotive N-Channel 8 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 8 R DS(on) () at V GS = V.3 I D (A) 5 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single FEATURES TrenchFET power MOSFET

More information

N- and P-Channel 30-V (D-S) MOSFET

N- and P-Channel 30-V (D-S) MOSFET N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free

More information

Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET Dual N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).95 at V GS = V. 3. at V GS = 4.5 V 9.4 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g Tested APPLICATIONS DC/DC

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-

More information

Automotive P-Channel 20 V (D-S) 175 C MOSFET

Automotive P-Channel 20 V (D-S) 175 C MOSFET Automotive P-Channel V (D-S) 75 C MOSFET D 3 SOT-3 (TO-36) S FEATURES TrenchFET power MOSFET AEC-Q qualified d % R g and UIS tested Material categorization: for definitions of compliance please see /doc?999

More information

N- and P-Channel 2.5-V (G-S) MOSFET

N- and P-Channel 2.5-V (G-S) MOSFET N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) (A) N-Channel. at = 4.5 V ± 4.5.4 at =.5 V ± 3.9 P-Channel -.5 at = - 4.5 V ± 3.5.85 at = -.5 V ±.7 FEATURES Halogen-free Option Available

More information

Automotive P-Channel 200 V (D-S) 175 C MOSFET

Automotive P-Channel 200 V (D-S) 175 C MOSFET Automotive P-Channel 2 V (D-S) 75 C MOSFET SQJ43AEP 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET Si357BDV P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A).5 at V GS = - V - 5. - 3. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Available TrenchFET Power MOSFETs

More information

Complementary 30 V (G-S) MOSFET

Complementary 30 V (G-S) MOSFET Si39DL Complementary 3 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) ( ) I D (A) N-Channel 3.8 at V GS = V 3.7 at V GS =. V. P-Channel - 3.9 at V GS = - V -..7 at V GS = -. V -.33 FEATURES TrenchFET Power MOSFET

More information

N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET Si546U N-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) 2.5 at V GS = 4.5 V 2.7 at V GS = 2.5 V 2.2 at V GS =. V 2 PowerPAK ChipFET Single 7 6 5 S Bottom View Ordering Information:

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V 7.5 3.3 at V GS = 4.5 V 6.5 FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power MOSFET PWM

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 6 R DS(on) ( ) at V GS = - V.55 R DS(on) ( ) at V GS = - 4.5 V I D (A) - 2 Configuration TO-252 Single S FEATURES Halogen-free According

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel 6 V (D-S) 175 C MOSFET SQD5N6-9L PRODUCT SUMMARY V DS (V) 6 R DS(on) ( ) at V GS = 1 V.9 R DS(on) ( ) at V GS = 4.5 V.13 I D (A) 5 Configuration TO-252 Single D FEATURES Halogen-free

More information

P-Channel 150 V (D-S) MOSFET

P-Channel 150 V (D-S) MOSFET P-Channel 5 V (-S) MOSFET Si4H PROUCT SUMMARY V S (V) R S(on) () I (A) Q g (TYP.) -5.6 at V GS = - V -.5.7 at V GS = -6 V -.5 6 SOT-363 SC-7 Single (6 leads) S 4 5 4. nc FEATURES TrenchFET power MOSFETS

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel 60 V (D-S) 75 C MOSFET 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified Material categorization: for definitions of compliance please

More information

P-Channel 30-V (D-S), MOSFET

P-Channel 30-V (D-S), MOSFET SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel 00 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 00 R DS(on) () at V GS = 0 V 0.300 I D (A).67 Configuration Single Package SOT-3 D 3 SOT-3 (TO-36) G Top View Marking Code: 9E S G D

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET SiA483J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.2at V GS = - V - 2 a 2 nc.3 at V GS = - 4.5 V - 2 a PowerPAK SC-7-6L-Single 6 5 2.5 mm S 4 S 2 3 G 2.5 mm

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET SiSS23N P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2 3.3 mm.5 at V GS = -.5 V - 5 e.63 at V GS = - 2.5 V - 5 e.5 at V GS = -.8 V - 5 e 8 PowerPAK 22-8S 7 6 S S

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET SiA449J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.24 at V GS = - 4.5 V - 2 a 23. nc.2 at V GS = - V - 2 a.38 at V GS = - 2.5 V - 2 a PowerPAK SC-7-L-Single

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (D-S) MOSFET SUD5N3-12P-GE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a.12 at V GS = 1 V 16.8 3.175 at V GS = 4.5 V 13.9 FEATURES TrenchFET power MOSFET 1 % R g and UIS tested Material

More information

P-Channel 12-V (D-S) MOSFET

P-Channel 12-V (D-S) MOSFET P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2.255 at V GS = -.5 V - 9 a.28 at V GS = - 3.7 V - 9 a.3 at V GS = - 2.5 V - 9 a. at V GS = -.8 V - 9 a.5 at V GS =

More information

N-Channel 200 V (D-S) 175 C MOSFET

N-Channel 200 V (D-S) 175 C MOSFET N-Channel 2 V (D-S) 75 C MOSFET SUP942E TO-22AB S D Top View G PRODUCT SUMMARY V DS (V) 2 R DS(on) max. ( ) at V GS = V.52 R DS(on) max. ( ) at V GS = 7.5 V.69 Q g typ. (nc) 58 I D (A) 9 Configuration

More information

Dual N-Channel 30 V (D-S) MOSFETs

Dual N-Channel 30 V (D-S) MOSFETs Dual N-Channel 3 V (D-S) MOSFETs 3 mm mm Top View PRODUCT SUMMARY PowerPAIR 3 x 3 3 mm D Bottom View CHANNEL- CHANNEL-2 V DS (V) 3 3 R DS(on) max. ( ) at V GS = V.285.5 R DS(on) max. ( ) at V GS = 4.5

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET Si38EL PROUCT SUMMARY V S (V) R S(on) (Ω) MAX. I (A) c Q g (TYP.) 3.3 at V GS = V.5.44 at V GS = 4.5 V.4.85 at V GS =.5 V.3 SOT-33 SC-7 (3 leads).4 nc FEATURES TrenchFET power

More information

N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET New Product N-Channel -V (-S) MOSFET SiBEK PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V PowerPAK SC-75-L-Single 5. mm S S G. mm.5 nc Part # code Marking Code A X

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (D-S) MOSFET 3.3 mm Top View PRODUCT SUMMARY PowerPAK 22-8 Dual 3.33 mm D 2 D 2 6 5 4 G Bottom View V DS (V) 3 R DS(on) max. (Ω) at V GS = 4.5 V.22 R DS(on) max. (Ω) at V GS = 2.5 V.26 Q

More information

N- and P-Channel 20-V (D-S) MOSFET

N- and P-Channel 20-V (D-S) MOSFET N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A). at V GS =. V. N-Channel. at V GS =. V.. at V GS =. V.. at V GS = -. V -. P-Channel -. at V GS = -. V -.. at V GS = -.V -. FEATURES

More information

N- and P-Channel 1.8 V (G-S) MOSFET

N- and P-Channel 1.8 V (G-S) MOSFET Si7DH N- and P-Channel.8 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A). at V GS =. V. N-Channel.8 at V GS =. V.. at V GS =.8 V.. at V GS = -. V -.86 P-Channel -.88 at V GS = -. V -.67.6 at V

More information

N-Channel 40 V (D-S) 175 C MOSFET

N-Channel 40 V (D-S) 175 C MOSFET N-Channel 4 V (D-S) 75 C MOSFET 6.5 mm PRODUCT SUMMARY PowerPAK SO-8L Single Top View 5.3 mm V DS (V) 4 R DS(on) max. ( ) at V GS = V.265 R DS(on) max. ( ) at V GS = 4.5 V.36 Q g typ. (nc) 23 I D (A) a

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si9DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 5 D FEATURES

More information

Complementary 20 V (D-S) MOSFET

Complementary 20 V (D-S) MOSFET SiDL Complementary V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).9 at V GS =. V. N-Channel.7 at V GS =.7 V..7. at V GS =. V..99 at V GS = -. V -. P-Channel -.6 at V GS = -.7 V

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) d Q g (TYP.).4 at V GS = V 2.46 at V GS = 7.5 V 2 TO-263 Top View S D G Ordering Information: -GE3 (Lead (Pb)-free and halogen-free)

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () at V GS = V.34 R DS(on) () at V GS = 4.5 V.4 I D (A) 35 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single

More information

P-Channel 40 V (D-S) 175 C MOSFET

P-Channel 40 V (D-S) 175 C MOSFET P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC

More information

P-Channel 8-V (D-S) MOSFET

P-Channel 8-V (D-S) MOSFET New Product P-Channel 8-V (D-S) MOSFET Si25ADS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).4 at V GS = - 4.5 V - 4. - 8.6 at V GS = - 2.5 V -.4 7.8 nc.88 at V GS = -.8 V - 2. FEATURES Halogen-free

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET i85y Vishay iliconix P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V -.5-3. at V G = -.5 V - 9. FEATURE Halogen-free According to IEC 69-- efinition TrenchFET Power MOFETs %

More information

N-Channel 190-V (D-S) MOSFET

N-Channel 190-V (D-S) MOSFET New Product N-Channel 9-V (-S) MOSFET SiB452K PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) 2.4 at V GS = 4.5 V.5 9 2. at V GS = 2.5 V.48 2.3 nc. at V GS =.8 V.4 PowerPAK SC-75-L-Single FEATURES

More information

Dual P-Channel 30 V (D-S) MOSFET

Dual P-Channel 30 V (D-S) MOSFET Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) - 3 R DS(on) () at V GS = - V.4 R DS(on) () at V GS = - 4.5 V.78 I D (A) per leg -5.4 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q Qualified

More information

P-Channel 1.8 V (G-S) MOSFET

P-Channel 1.8 V (G-S) MOSFET Si7DL P-Channel. V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).9 at V GS = -.5 V ±.9 -.5 at V GS = -.5 V ±.7.5 at V GS = -. V ±. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET

More information

N-Channel 250 V (D-S) 175 C MOSFET

N-Channel 250 V (D-S) 175 C MOSFET N-Channel 25 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 25.35 at V GS = V 63.325 at V GS = 7.5 V 62 TO-22AB Top View S D G Ordering Information: -GE3 (lead (Pb)-free

More information

P-Channel 60 V (D-S) MOSFET

P-Channel 60 V (D-S) MOSFET P-Channel 6 V (-S) MOSFET TU4P6 PROUCT SUMMARY V S (V) R S(on) ( ) (A).45 at V GS = - V - 4-6 d.54 at V GS = - 4.5 V - 4 d FEATURES TrenchFET Power MOSFET Material categorization: APPLICATIONS Load Switch

More information

P-Channel 20-V (D-S) MOSFET with Schottky Diode

P-Channel 20-V (D-S) MOSFET with Schottky Diode P-Channel -V (D-S) MOSFET with Schottky Diode Si3853DV PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = -.5 V ±.8 -.3 at V GS = -.5 V ±.3 FEATURES Halogen-free According to IEC 9-- Definition LITTLE

More information

N-Channel 30-V (D-S) MOSFET with Sense Terminal

N-Channel 30-V (D-S) MOSFET with Sense Terminal SUM5N3-3LC N-Channel 3-V (D-S) MOSFET with Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) (Ω) (A).3 at V GS = V 5 a 3.7 at V GS =.5 V 8 a D PAK-5 FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode

More information