AP9971GD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

Transcription

1 RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BV DSS 6V Fast Switching Speed R DS(ON) mω D PDIP-8 Package I D Description PDIP-8 S S G G dvanced Power MOSFETs from PEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G G D S S bsolute Maximum Ratings V DS V GS Symbol Parameter Rating Units I = I =7 I DM Drain-Source Voltage 6 Gate-Source Voltage + Continuous Drain Current 3, V V Continuous Drain Current 3, V V 3. Pulsed Drain Current P = Total Power Dissipation Linear Derating Factor 6 T STG Storage Temperature Range - to T J Operating Junction Temperature Range - to V V W W/ Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 6. /W Data and specifications subject to change without notice 893

2 Electrical j = o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =u V ΔBV DSS /ΔT j Breakdown Voltage Temperature Coefficient Reference to, I D =m V/ R DS(ON) Static Drain-Source On-Resistance V GS =V, I D = - - mω V GS =4.V, I D = mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =u - 3 V g fs Forward Transconductance V DS =V, I D = S I DSS Drain-Source Leakage Current V DS =6V, V GS =V - - u Drain-Source Leakage Current (T j =7 o C) V DS =48V,V GS =V - - u I GSS Gate-Source Leakage V GS =+V n Q g Total Gate Charge I D = nc Q gs Gate-Source Charge V DS =48V nc Q gd Gate-Drain ("Miller") Charge V GS =V nc t d(on) Turn-on Delay Time V DS =3V ns t r Rise Time I D = - - ns t d(off) Turn-off Delay Time R G =3.3Ω,V GS =V ns t f Fall Time R D =6Ω -. - ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V DS =V pf C rss Reverse Transfer Capacitance f=.mhz - - pf Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units V SD Forward On Voltage I S =.6, V GS =V - -. V trr Reverse Recovery Time I S =, V GS =V, ns Qrr Reverse Recovery Charge di/dt=/µs nc Notes:.Pulse width limited by Max. junction temperature..pulse width <3us, duty cycle <%. 3. Mounted on in copper pad of FR4 board ;9 /W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION. USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED. PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN.

3 3 3 I D, Drain Current () 3 T = o C V 6.V 4.V V G =3.V I D, Drain Current () 3 T = o C V 6.V 4.V V G =3.V Fig. Typical Output Characteristics Fig. Typical Output Characteristics. 48 I D = T = o C.6 I D = V G =V RDS(ON) (mω) 44 4 Normalized R DS(ON) V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature.4 I S () T j = o C T j = o C V GS(th) (V) V SD, Source-to-Drain Voltage (V).4 - T j,junction Temperature ( o C) Fig. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 3

4 4 f=.mhz I D = V GS, Gate to Source Voltage (V) V DS =48V V DS =38V V DS =3V C (pf) C iss C oss C rss Q G, Total Gate Charge (nc) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Duty foctor=. I D () T = o C Single Pulse ms ms ms s DC Normalized Thermal Response (R thja )... Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thja + T a Rthja=9 /W... t, Pulse Width (s) Fig 9. Maximum Safe Operating rea Fig. Effective Transient Thermal Impedance V DS 9% V G V Q G Q GS Q GD % V GS t d(on) t r t d(off) t f Charge Q Fig. Switching Time Waveform Fig. Gate Charge Waveform 4

5 Package Outline : PDIP-8 DVNCED POWER ELECTRONICS CORP. D E E B B B e L SYMBOLS Millimeters MIN NOM MX B B..4.8 B C D E E E e.4 BSC L C.ll Dimensions re in Millimeters..Dimension Does Not Include Mold Protrusions. E Part Marking Information & Packing : PDIP-8 997GD YWWSSS Part Number Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence