Advanced Power Electronics Corp.

Transcription

1 dvanced Power Electronics Corp. P4T3GS/P-HF Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOSFET Simple Drive Requirement D BV DSS 3V Low Gate Charge R DS(ON) 25mΩ Fast Switching Characteristic I D 28 G RoHS Compliant & Halogen-Free S Description P4T3 series are from dvanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (P4T3GP) are available for low-profile applications. G D S G D S TO-263(S) TO-22(P) bsolute Maximum Ratings@T j =25 o C(unless otherwise specified) V DS V GS Symbol Parameter Rating Units I C =25 I C = I DM Drain-Source Voltage 3 Gate-Source Voltage +25 Continuous Drain Current, V V 28 Continuous Drain Current, V V 24 Pulsed Drain Current 95 P C =25 Total Power Dissipation 3.25 Linear Derating Factor.25 T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 V V W W/ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 4 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 /W Data and specifications subject to change without notice 2555

2 P4T3GS/P-HF Electrical j =25 o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =25u V ΔBV DSS /ΔT j Breakdown Voltage Temperature Coefficient Reference to 25, I D =m V/ R DS(ON) Static Drain-Source On-Resistance 2 V GS =V, I D = mω V GS =4.5V, I D = mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =25u - 3 V g fs Forward Transconductance V DS =V, I D =8-5 - S I DSS Drain-Source Leakage Current V DS =3V, V GS =V - - u Drain-Source Leakage Current (T j =25 o C) V DS =24V,V GS =V u I GSS Gate-Source Leakage V GS = +25V, V DS =V n Q g Total Gate Charge 2 I D = nc Q gs Gate-Source Charge V DS =2V nc Q gd Gate-Drain ("Miller") Charge V GS =4.5V nc t d(on) Turn-on Delay Time 2 V DS =5V ns t r Rise Time I D = ns t d(off) Turn-off Delay Time R G =3.3Ω ns t f Fall Time V GS =V ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V DS =25V pf C rss Reverse Transfer Capacitance f=.mhz pf Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units I S Continuous Source Current ( Body Diode ) V D =V G =V, V S =.3V I SM Pulsed Source Current ( Body Diode ) V SD Forward On Voltage 2 T j =25, I S =28, V GS =V V Notes:.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION. USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED. PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN. 2

3 P4T3GS/P-HF 9 75 T C =25 o C V 8.V T C =5 o C V 8.V I D, Drain Current () V V G =4.V I D, Drain Current () V V G =4.V V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 7 2. I D =4 T C =25 I D =8 V G =V R DS(ON) (mω) 5 Normalized R DS(ON) V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature I S () T j =5 o C T j =25 o C V GS(th) (V) V SD, Source-to-Drain Voltage (V) T j, Junction Temperature ( o C ) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 3

4 P4T3GS/P-HF f=.mhz 2 I D =8 C iss V GS, Gate to Source Voltage (V) V DS =V V DS =5V V DS =2V C (pf) C oss C rss Q G, Total Gate Charge (nc) V DS,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Duty factor =.5 I D () T C =25 o C Single Pulse us ms ms ms DC Normalized Thermal Response (R thjc ) Single Pulse P DM t T Duty Factor = t/t Peak T j = P DM x R thjc + T C. V DS,Drain-to-Source Voltage (V) t, Pulse Width (s) Fig 9. Maximum Safe Operating rea Fig. Effective Transient Thermal Impedance V DS 9% V G 4.5V Q G Q GS Q GD % V GS t d(on) t r t d(off)t f Charge Q Fig. Switching Time Waveform Fig 2. Gate Charge Waveform 4

5 MRKING INFORMTION TO-263 P4T3GS/P-HF 4T3GS Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence TO-22 4T3GP YWWSSS Part Number meet Rohs requirement for low voltage MOSFET only Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5