WPM2006 Power MOSFET and Schottky Diode

Transcription

1 WPM6 WPM6 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low V F Schottky DFN* -6L Applications Li--Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (T J = 5 unless otherwise noted) Parameter Symbol Value Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GS ±8. V Continuous Drain Current (Note ) Power Dissipation (Note ) Continuous Drain Current (Note ) Power Dissipation (Note ) Steady State T A = 5 C I D A T A = 85 C. t 5 s T A = 5 C 4. Steady P D State T A = 5 C.45 t 5 s. Steady State T A = 5 C I D. A T A = 85 C T A = 5 C.5 P D.7 W W A N/C D Pin connections: K 6 5 D 4 K G S Pulsed Drain Current t p = s I DM A Operating Junction and Storage Temperature T J, T STG 55 to 5 C Marking: Source Current (Body Diode) (Note ) I S A. Surface Mounted on FR4 Board using in sq pad size, oz Cu.. Surface Mounted on FR4 Board using minimum pad size, oz Cu. SCHOTTKY DIODE MAXIMUM RATINGS(T J = 5 unless otherwise noted) WLSI JYWW Parameter Symbol Limits Unit Peak repetitive reverse voltage V RRM V J = Specific Device Code YWW = Date Code. DC Blocking voltage V R V Average rectified forward current I F A Order information Part Number Package Shipping WPM6 6/TR DFN *- 6L Tape & Reel Page Dec, Rev.

2 WPM6 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction to Ambient Steady State (Note ) R JA 86 Junction to Ambient t 5 s (Note ) R JA 54 Junction to Ambient Steady State Min Pad (Note 4) R JA 75. Surface Mounted on FR4 Board using in sq pad size, oz Cu. 4. Surface Mounted on FR4 Board using the minimum pad size, oz Cu. C/W MOSFET ELECTRICAL CHARACTERISTICS(T J =5 unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS = V,I D = -5 A - V Zero Gate Voltage Drain Current I DSS V DS =-6V,V GS = V - A Gate Source leakage current I GSS V GS = 8V,VDS = V na On Characteristics Gate Threshold Voltage V GS(th) V GS = V DS, I D =-5 A V Static Drain-Source V GS = -4.5V, I D = -.8A 9 m R On-Resistance DS(on) V GS = -.5V,I D = -.A 5 m Forward Transconductance g FS V DS = -V, I D = -.7A 7. S Dynamic Characteristics Input Capacitance C iss 48 pf V Output Capacitance C DS = -5V, V GS = V, oss pf f =. MHz 46 Reverse Transfer Capacitance C rss pf Switching Characteristics Turn-On Delay Time t d(on) 8 ns Turn-On Rise Time t r V GS = -4.5V, V DS = -6V, 5 ns Turn-Off Delay Time t d(off) R L = 6, R G =6, 4 ns Turn-Off Fall Time t f 5 ns Total Gate Charge Q G(TOT) 7. nc Threshold gate charge Q G(TH) V DS = -6V,I D = -.8A,. nc Gate-Source Charge Q GS V GS =-4.5V. nc Gate-Drain Charge. nc Q GD Drain-Source Diode Characteristics and Maximun Ratings Forward Diode Voltage V SD V GS = V,I S = - A V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 5 C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V F.45 I F =.A V V F.48 I F =.5A V F.575 I F =A Reverse current I R A V R =V I R A V R =V Page Dec, Rev.

3 WPM6 Typical Characteristics (T J = 5 C unless otherwise noted) I D, DRAIN CURRENT (AMPS) 4 V GS = 6 V to V V GS =.4 V. V V.8 V.6 V.4 V. V T J = 5 C V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) I D, DRAIN CURRENT (AMPS) 4.5 V DS V 5 C C T C = 55 C.5.5 V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. On Region Characteristics Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( ) I D =. A T J = 5 C V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. On Resistance vs. Gate to Source Voltage R DS(on), DRAIN TO SOURCE RESISTANCE ( ) T J = 5 C V GS =.5 V V GS = 4.5 V I D, DRAIN CURRENT (AMPS) Figure 4. On Resistance vs. Drain Current and Gate Voltage R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED) I D =. A V GS = 4.5 V I DSS, LEAKAGE (na) V GS = V T J = 5 C T J = C T J, JUNCTION TEMPERATURE ( C) Figure 5. On Resistance Variation with Temperature V DS, DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 6. Drain to Source Leakage Current vs. Voltage Page Dec, Rev.

4 C, CAPACITANCE (pf) 6 V DS = V V GS = V T J = 5 C 5 C ISS 4 C RSS C OSS V GS V DS V GS, GATE TO SOURCE VOLTAGE (V) 5 4 V GS WPM6 I D =.8 A T J = 5 C V DS, DRAIN TO SOURCE VOLTAGE (V) t, TIME (ns) GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (V) V DD = 6 V I D =. A V GS = 4.5 V t d(off) t d(on) Figure 7. Capacitance Variation R G, GATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation vs. Gate Resistance t f t r I S, SOURCE CURRENT (AMPS) Figure 8. Gate to Source and Drain to Source Voltage vs. Total Charge V GS = V T J = 5 C Q G, TOTAL GATE CHARGE (nc) V SD, SOURCE TO DRAIN VOLTAGE (V) Figure. Diode Forward Voltage vs. Current r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = Chip SINGLE PULSE...E.E.E.E+.E+.E+.E+.54 F.854 F Normalized to ja at s..74 F.789 F 7.55 F Ambient t, TIME (s) Figure. Thermal Response Page 4 Dec, Rev.

5 WPM6 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse Square Wave Pulse Duration (sec) Reverse Current vs. Junction Temperature 5 Forward Voltage Drop -- Reverse Current (ma).. V V -- Forward Current (A) T J = 5_C T J =5_C I R. I F T J -- Junction Temperature (_C) V F -- Forward Voltage Drop (V) 5 Capacitance -- Junction Capacitance (pf) C T V KA -- Reverse Voltage (V) Page 5 Dec, Rev.

6 WPM6 Power Dissipation Characteristics. The package of WPM6 is DFNx-6L, surface mounted on FR4 Board using in sq pad size ozcu R JA is 84 /W, surface mounted on FR4 Board using minimum pad size ozcu R JA is 7 /W.. The power dissipation PD is based on TJ(MAX)=5 C, and the relation between TJ and Pd is TJ = Ta + R JA* PD, the maximum power dissipation is determined by R JA.. The R JA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R JA and result in larger maximum power dissipation. 84 /W when mounted on a in pad of oz copper 75 /W when mounted on a minimum pad of oz copper Page 6 Dec, Rev.

7 WPM6 Top View Bottom View Side View Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A..5.. A.REF..8REF. D E D E k.min..8min. b e.65typ..6typ. L Page 7 Dec, Rev.

8 WPM6 DFN*- 6L PCB Layout Guide PITCH DIMENSIONS: MILLIMETERS Page 8 Dec, Rev.