ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS =30V : R DS ( on )=0.065
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1 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS =30V : R DS ( on )=0.065 ; I D =3.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT23 Fast switching speed Low threshold Low gate drive SOT23 package APPLICATIONS DC-DC Converters Power Management functions Disconnect switches Motor control ORDERING INFORMATION PINOUT DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN3A14FTA 7 8mm 3000 units ZXMN3A14FTC 13 8mm units DEVICE MARKING 314 1
2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GS 20 V Continuous Drain V GS = 10V; T A =25 C GS = 10V; T A =70 C GS = 10V; T A =25 C (a) I D A A A Pulsed Drain Current (c) I DM 18 A Continuous Source Current (Body Diode) (b) I S 2.3 A Pulsed Source Current (Body Diode) (c) I SM 18 A Power Dissipation at T A =25 C (a) Linear Derating Factor P D 1 8 W mw/ C Power Dissipation at T A =25 C (b) Linear Derating Factor P D W mw/ C Operating and Storage Temperature Range T j,t stg -55 to +150 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R JA 125 C/W Junction to Ambient (b) R JA 83 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. 2
3 CHARACTERISTICS 3
4 ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 30 V I D =250 A, V GS =0V Zero Gate Voltage Drain Current I DSS 1 A V DS = 30V, V GS =0V Gate-Body Leakage I GSS 100 na V GS = 12V, V DS =0V Gate-Source Threshold Voltage V GS(th) 1.0 V I D = 250 A, V DS =V GS Static Drain-Source On-State R DS(on) Resistance (1) V GS = 10V, I D =3.2A V GS =4.5V,I D =2.6A Forward Transconductance (1) (3) g fs 7.1 S V DS = 15V, I D =3.2A DYNAMIC (3) Input Capacitance C iss 448 pf V DS = 15V, V GS =0V Output Capacitance C oss 82 pf f=1mhz Reverse Transfer Capacitance C rss 49 pf (2) (3) SWITCHING Turn-On-Delay Time t d(on) 2.4 ns V DD = 15V, V GS = 10V Rise Time t r 2.5 ns I D =1A Turn-Off Delay Time t d(off) 13.1 ns R G 6.0 Fall Time t f 5.3 ns Total Gate Charge Q g 8.6 nc V DS = 15V, V GS = 10V Gate-Source Charge Q gs 1.4 nc I D =3.2A Gate Drain Charge Q gd 1.8 nc SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD V T j =25 C, I S = (2.5)A, V GS =0V Reverse Recovery Time (3) t rr 13 ns T j =25 C, I F = (1.6)A, Reverse Recovery Charge (3) Q rr 7 NC di/dt=100a/ s NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. 4
5 TYPICAL CHARACTERISTICS 5
6 TYPICAL CHARACTERISTICS 6
7 PACKAGE OUTLINE PAD LAYOUT Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS MILLIMETRES INCHES MILLIMETRES INCHES DIM MIN MAX MIN MAX DIM MIN MAX MIN MAX A H B K C L D M F N 0.95 NOM NOM G 1.90 NOM NOM 10 TYP 10 TYP Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY USA Zetex (Asia) Ltd Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) Fax: (49) europe.sales@zetex.com Telephone: (1) Fax: (1) usa.sales@zetex.com Telephone: (852) Fax: (852) asia.sales@zetex.com Telephone (44) Fax: (44) hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to 7
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