ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 40V; R DS(ON) = 0.05 DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION

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1 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 40V; R DS(ON) = 0.05 = 7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT223 Fast switching speed Low threshold Low gate drive SOT223 package APPLICATIONS DC - DC Converters Audio Output Stages Relay and Solenoid driving Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN4A06GTA 7 2mm 000 units ZXMN4A06GTC 3 2mm 4000 units DEVICE MARKING ZXMN 4A06 Top View ISSUE - MAY 2002

2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage S 40 V Gate-Source Voltage 20 V Continuous Drain Current =0V; T A =25 C(b) =0V; T A =70 C(b) =0V; T A =25 C(a) Pulsed Drain Current (c) M 22 A Continuous Source Current (Body Diode) (b) I S 5.4 A Pulsed Source Current (Body Diode)(c) I SM 22 A Power Dissipation at T A =25 C (a) Linear Derating Factor Power Dissipation at T A =25 C (b) Linear Derating Factor P D P D Operating and Storage Temperature Range T j :T stg -55 to +50 C A W mw/ C W mw/ C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θja 62.5 C/W Junction to Ambient (b) R θja 32.2 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 0 s - pulse width limited by maximum junction temperature. ISSUE - MAY

3 CHARACTERISTICS 0 00m 0m R DS(on) Limited DC s Single Pulse T amb = 25 C 00ms 0ms ms 00µs 0 Drain-Source Voltage (V) Safe Operating Area Max Power Dissipation (W) Temperature ( C) Derating Curve Thermal Resistance ( C/W) T amb =25 C D= D= 0.2 Single Pulse 0 D= 0.05 D= µ m 0m 00m 0 00 k Pulse Width (s) Transient Thermal Impedance Maximum Power (W) 00 0 Single Pulse T amb =25 C 00µ m 0m 00m 0 00 k Pulse Width (s) Pulse Power Dissipation ISSUE - MAY

4 ELECTRICAL CHARACTERISTICS (at TA = 25 C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 40 V =250 A, =0V Zero Gate Voltage Drain Current SS A =40V, =0V Gate-Body Leakage I GSS 00 na =±20V, =0V Gate-Source Threshold Voltage (th).0 V I =250 A, V D DS = Static Drain-Source On-State Resistance () R DS(on) =0V, =4.5A =4.5V, =3.2A Forward Transconductance (3) g fs 8.7 S =5V, =2.5A DYNAMIC (3) Input Capacitance C iss 770 pf Output Capacitance C oss 92 pf =40V, =0V, f=mhz Reverse Transfer Capacitance C rss 6 pf SWITCHING(2) (3) Turn-On Delay Time t d(on) 2.55 ns Rise Time t V DD =30V, =2.5A r 4.45 ns R G =6.0, =0V Turn-Off Delay Time t d(off) 28.6 ns (refer to test circuit) Fall Time t f 7.35 ns Total Gate Charge Q g 8.2 nc =30V, =0V, Gate-Source Charge Q gs 2. nc =2.5A Gate-Drain Charge Q gd 4.5 nc (refer to test circuit) SOURCE-DRAIN DIODE Diode Forward Voltage () V SD V T J =25 C, I S =2.5A, =0V Reverse Recovery Time (3) t rr 9.86 ns T J =25 C, I F =2.5A, Reverse Recovery Charge (3) Q rr 6.36 nc di/dt= 00A/µs NOTES () Measured under pulsed conditions. Width 300µs. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE - MAY

5 TYPICAL CHARACTERISTICS 0 0. T= 25 C 0V 4V 3.5V 3V 2.5V V Drain-Source Voltage (V) Output Characteristics 0 0. T = 50 C 0V 4V 3.5V 3V 2.5V 2V V Drain-Source Voltage (V) Output Characteristics R DS(on) Drain-Source On-Resistance (Ω) 0 T = 50 C T = 25 C = 0V Typical Transfer Characteristics 2V 0 0. Gate-Source Voltage (V) 0.5V T = 25 C 2.5V 3V 3.5V 4V 0V On-Resistance v Drain Current Normalised R DS(on) and (th) = = 250uA Tj Junction Temperature ( C) Normalised Curves v Temperature I SD Reverse 0 T = 50 C = 0V = 4.5A T = 25 C R DS(on) (th) V SD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ISSUE - MAY

6 TYPICAL CHARACTERISTICS ISSUE - MAY

7 PACKAGE OUTLINE PAD LAYOUT DETAILS min (3x) min (3x) 2.0 min 3.8 min PACKAGE DIMENSIONS DIM MILLIMETRES MILLIMETRES DIM MIN MAX MIN MAX A.80 D A e 2.30 BASIC A e 4.60 BASIC b E b E C L 0.90 Zetex plc 2002 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) Fax: (44) Zetex GmbH Streitfeldstraße 9 D-8673 München Germany Telefon: (49) Fax: (49) Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY788 USA Telephone: (63) Fax: (63) Zetex (Asia) Ltd Metroplaza, Tower Hing Fong Road Kwai Fong Hong Kong Telephone: (852) Fax: (852) These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to ISSUE - MAY