MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ

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1 MDU1516 Single N-Channel Trench MOSFET 3V MDU1516 Single N-channel Trench MOSFET 3V, 7.6A, 9.mΩ General Description Features The MDU1516 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1516 is suitable device for DC/DC Converter and general purpose applications. = 3V = = 1V < 9. = 1V < 1. =.5V 1% UIL Tested 1% Rg Tested D D D D D D D D D S S S G G S S S G PowerDFN56 S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 3 V Gate-Source Voltage S ±2 V T C=25 o C 7.6 Continuous Drain Current (1) Power Dissipation T C=7 o C 38. T A=25 o C 18.6 (3) T A=7 o C 1.9 (3) Pulsed Drain Current M 1 A T C=25 o C 35.7 T C=7 o C 22.8 P D T A=25 o C 5.5 (3) T A=7 o C 3.5 (3) Single Pulse Avalanche Energy (2) E AS 53. mj Junction and Storage Temperature Range T J, T stg -55~15 A W o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 22.7 Thermal Resistance, Junction-to-Case R θjc 3.5 o C/W Feb. 21. Version 1.3 1

2 MDU1516 Single N-Channel Trench MOSFET 3V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status MDU1516URH -55~15 o C PowerDFN56 Tape & Reel 3 units Halogen Free Electrical Characteristics (T J =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25μA, = V Gate Threshold Voltage (th) =, = 25μA V Drain Cut-Off Current SS = 3V, = V T J=55 o C μa Gate Leakage Current I GSS = ±2V, = V - - ±.1 = 1V, = 1A Drain-Source ON Resistance T J=125 o C mω =.5V, = 11A Forward Transconductance g fs = 5V, = 1A S Dynamic Characteristics Total Gate Charge Q g(1v) Total Gate Charge Q g(.5v) = 15.V, = 1A, Gate-Source Charge Q gs = 1V nc Gate-Drain Charge Q gd Input Capacitance C iss Reverse Transfer Capacitance C rss = 15.V, = V, f = 1.MHz pf Output Capacitance C oss Turn-On Delay Time t d(on) Rise Time t r = 1V, = 15.V, Turn-Off Delay Time t d(off) = 1A, R G = 3.Ω ns Fall Time t f Gate Resistance Rg f=1 MHz Ω Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = 1A, = V V Body Diode Reverse Recovery Time t rr I F = 1A, dl/dt = 1A/μs ns Body Diode Reverse Recovery Charge Q rr nc Note : 1. Surface mounted FR- board by JEDEC (jesd51-7) 2. E AS is tested at starting Tj = 25, L =.1mH, I AS = 18A, V DD = 27V, = 1V 3. T < 1sec. Feb. 21. Version 1.3 2

3 R, Reverse Drain Current [A], (Normalized) Drain-Source On-Resistance [mω ], Drain-Source On-Resistance Drain-Source On-Resistance [mω] MDU1516 Single N-Channel Trench MOSFET 3V 3 = 1V.V V 5.V 3.5V 12 =.5V = 1V V , Drain-Source Voltage [V] Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage = 1 V 2. = 16. A 8 = 1.A T A = T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature , Gate to Source Volatge [V] Fig. On-Resistance Variation with Gate to Source Voltage 16 = 5V 1 1 = V 12 8 T A =25 1 T A = , Gate-Source Voltage [V] V SD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Feb. 21. Version 1.3 3

4 Z JC (t), Thermal Response Z JA (t), Thermal Response, Gate-Source Voltage [V] Capacitance [pf] MDU1516 Single N-Channel Trench MOSFET 3V 1 8 Note : = 1A = 15V 12 9 C iss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd C oss Notes ; 1. = V 2. f = 1 MHz C rss Q G, Total Gate Charge [nc] , Drain-Source Voltage [V] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics DC 1s 1s 1 ms 1 ms Operation in This Area is Limited by R DS(on) Single Pulse T J =Max rated T C = , Drain-Source Voltage [V] T A, Case Temperature [ ] Fig.9 Maximum Safe Operating Area Fig.1 Maximum Drain Current vs. Case Temperature D= D= single pulse? Notes : Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z JC * R JC (t) + T C single pulse * Notes : Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z JA * R JA (t) + T A t 1, Rectangular Pulse Duration [sec] t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve (Junction-to-Case) Fig.12 Transient Thermal Response Curve (Junction-to-Ambient) Feb. 21. Version 1.3

5 MDU1516 Single N-Channel Trench MOSFET 3V Package Dimension PowerDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified MILLIMETERS Dimension Min Max A b C.2.3 D D E E E2 -.3 e 1.27BSC H.1.71 K.2 - L α 12 Feb. 21. Version 1.3 5

6 MDU1516 Single N-Channel Trench MOSFET 3V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Feb. 21. Version 1.3 6

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